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1. 发明授权

US08148275B2 Method for forming dielectric films 有权
标题翻译：电介质膜的形成方法
公开(公告)号：US08148275B2
公开(公告)日：2012-04-03
申请号：US12338121
申请日：2008-12-18
申请人： Yusuke Fukuchi , Naomu Kitano
发明人： Yusuke Fukuchi , Naomu Kitano
IPC分类号： H01L21/71
CPC分类号： H01L21/3145 , H01L21/31641 , H01L21/31645
摘要： A method for forming dielectric films including metal nitride silicate on a silicon substrate, comprises a first step of depositing a film containing metal and silicon on a silicon substrate in a non-oxidizing atmosphere using a sputtering method; a second step of forming a film containing nitrogen, metal and silicon by nitriding the film containing metal and silicon; and a third step of forming a metal nitride silicate film by oxidizing the film containing nitrogen, metal and silicon.
摘要翻译：一种用于在硅衬底上形成包括金属氮化硅硅酸盐的电介质膜的方法，包括使用溅射法在非氧化性气氛中在硅衬底上沉积含有金属和硅的膜的第一步骤; 通过氮化含有金属和硅的膜来形成含有氮，金属和硅的膜的第二步骤; 以及通过氧化含有氮，金属和硅的膜来形成金属氮化硅酸盐膜的第三步骤。

2. 发明申请

US20090275209A1 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：US20090275209A1
公开(公告)日：2009-11-05
申请号：US12139902
申请日：2008-06-16
申请人： Shinzo Uchiyama , Nobumasa Suzuki , Hideo Kitagawa , Yusuke Fukuchi
发明人： Shinzo Uchiyama , Nobumasa Suzuki , Hideo Kitagawa , Yusuke Fukuchi
IPC分类号： H01L21/46 , C23C16/511
CPC分类号： H01L21/28185 , H01J37/32192 , H01J37/32449 , H01J37/32623 , H01J37/32733 , H01L21/28202 , H01L29/518
摘要： Disclosed is a plasma processing apparatus and a plasma processing method, by which ions of plasma can be injected uniformly over the whole surface of a substrate to be processed, in a short time. Specifically, when the substrate is processed in a reaction container, the gas pressure inside the reaction container is increased. Alternatively, the distance between a plasma processing portion and the substrate is enlarged, or the substrate is temporally moved outwardly of the reaction container. As a further alternative, a shutter is disposed between the plasma producing zone and the substrate. With this procedure, incidence of ions of the plasma upon the substrate can be substantially intercepted for a predetermined time period from the start of plasma production.
摘要翻译：公开了一种等离子体处理装置和等离子体处理方法，通过该等离子体处理装置和等离子体处理方法能够在短时间内均匀地注入待处理基板的整个表面。具体地，当在反应容器中处理基板时，反应容器内部的气体压力增加。或者，等离子体处理部分和基板之间的距离增大，或者基板在时间上移动到反应容器的外部。作为另一替代方案，快门设置在等离子体产生区域和基板之间。利用该程序，从等离子体生产开始的预定时间段，可以基本上截断等离子体在基板上的离子的入射。

3. 发明申请

US20060021700A1 Plasma processing apparatus and method 审中-公开
标题翻译：等离子体处理装置及方法
公开(公告)号：US20060021700A1
公开(公告)日：2006-02-02
申请号：US11190794
申请日：2005-07-27
申请人： Shinzo Uchiyama , Nobumasa Suzuki , Hideo Kitagawa , Yusuke Fukuchi
发明人： Shinzo Uchiyama , Nobumasa Suzuki , Hideo Kitagawa , Yusuke Fukuchi
IPC分类号： C23F1/00
CPC分类号： H01L21/28185 , H01J37/32192 , H01J37/32449 , H01J37/32623 , H01J37/32733 , H01L21/28202 , H01L29/518
摘要： Disclosed is a plasma processing apparatus and a plasma processing method, by which ions of plasma can be injected uniformly over the whole surface of a substrate to be processed, in a short time. Specifically, when the substrate is processed in a reaction container, the gas pressure inside the reaction container is increased. Alternatively, the distance between a plasma processing portion and the substrate is enlarged, or the substrate is temporally moved outwardly of the reaction container. As a further alternative, a shutter is disposed between the plasma producing zone and the substrate. With this procedure, incidence of ions of the plasma upon the substrate can be substantially intercepted for a predetermined time period from the start of plasma production.
摘要翻译：公开了一种等离子体处理装置和等离子体处理方法，通过该等离子体处理装置和等离子体处理方法能够在短时间内均匀地注入待处理基板的整个表面。具体地，当在反应容器中处理基板时，反应容器内部的气体压力增加。或者，等离子体处理部分和基板之间的距离增大，或者基板在时间上移动到反应容器的外部。作为另一替代方案，快门设置在等离子体产生区域和基板之间。利用该程序，从等离子体生产开始的预定时间段，可以基本上截断等离子体在基板上的离子的入射。

4. 发明申请

US20050106896A1 Processing apparatus and method 审中-公开
标题翻译：处理装置和方法
公开(公告)号：US20050106896A1
公开(公告)日：2005-05-19
申请号：US10766854
申请日：2004-01-30
申请人： Yusuke Fukuchi
发明人： Yusuke Fukuchi
IPC分类号： H01L21/318 , C23C8/34 , C23C8/36 , H01L21/28 , H01L21/31 , H01L21/314 , H01L21/316 , H01L29/51 , H01L29/78 , H01L21/469
CPC分类号： H01L21/0214 , C23C8/34 , C23C8/36 , H01L21/02249 , H01L21/02252 , H01L21/28185 , H01L21/28202 , H01L21/3144 , H01L21/31662 , H01L29/518
摘要： A processing method for forming an insulated film on a surface of a substrate to be processed, through an oxynitriding treatment includes the steps of nitriding a surface of the substrate by irradiating plasma containing nitrogen atoms onto the substrate, and oxidizing the surface of the substrate, which has been nitrided, by irradiating plasma containing oxygen atoms.
摘要翻译：通过氮氧化处理在被处理基板的表面上形成绝缘膜的处理方法包括以下步骤：通过将含有氮原子的等离子体照射在基板上来氧化基板的表面来对基板的表面进行氮化，通过照射含有氧原子的等离子体已被氮化。

5. 发明申请

US20070062645A1 PROCESSING APPARATUS 审中-公开
标题翻译：加工设备
公开(公告)号：US20070062645A1
公开(公告)日：2007-03-22
申请号：US11531991
申请日：2006-09-14
申请人： Yusuke Fukuchi
发明人： Yusuke Fukuchi
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： C23C8/36 , C23C8/00 , C30B15/00 , C30B29/06 , C30B33/04 , H01J37/32357 , H01J37/32422
摘要： A processing apparatus which can precisely control a radical flux over a broad range in radical treatment is provided. A surface of a substrate, such as a semiconductor, is processed with radicals in a treatment chamber. A gas inlet is disposed between a support for supporting the substrate and a radical-generating region where radicals are generated by a radical-forming portion. A first gas outlet is disposed at the side of the radical-generating region with respect to the gas inlet. A second gas outlet is disposed at the side of the support with respect to the gas inlet.
摘要翻译：提供了一种能够精确控制根治治疗中的广泛范围内的自由基通量的处理装置。诸如半导体的衬底的表面在处理室中被自由基加工。气体入口设置在用于支撑衬底的支撑件和由自由基形成部分产生自由基的自由基产生区域之间。第一气体出口相对于气体入口设置在自由基产生区域的一侧。第二气体出口相对于气体入口设置在支撑件的侧面。

6. 发明申请

US20060110934A1 Method and apparatus for forming insulating film 审中-公开
标题翻译：用于形成绝缘膜的方法和装置
公开(公告)号：US20060110934A1
公开(公告)日：2006-05-25
申请号：US11268819
申请日：2005-11-08
申请人： Yusuke Fukuchi
发明人： Yusuke Fukuchi
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31662 , H01J37/32192 , H01L21/02126 , H01L21/02236 , H01L21/02238 , H01L21/02252
摘要： The present invention provides a method and apparatus for forming an insulating film having good reliability, in accordance with a process without high-temperature heating. In accordance with the present invention, in a process for forming an insulating film for a semiconductor device by oxidizing a material to be processed, exposed at the surface of a substrate to be processed, in accordance with plasma oxidation method, the plasma processing is carried out by use of at least a gas that contains hydrogen atoms other than H2 and H2O and a gas that contains oxygen atoms other than H2O.
摘要翻译：本发明提供一种根据不进行高温加热的方法形成具有良好可靠性的绝缘膜的方法和装置。根据本发明，在根据等离子体氧化法在待处理基板的表面上氧化被处理材料而形成用于半导体器件的绝缘膜的工艺中，进行等离子体处理通过使用至少含有除H 2 H 2和H 2 O 2之外的氢原子的气体和包含除H 2以外的氧原子的气体， SUB> O。

7. 发明申请

US20060003603A1 Method and apparatus for processing 审中-公开
标题翻译：处理方法和装置
公开(公告)号：US20060003603A1
公开(公告)日：2006-01-05
申请号：US11165505
申请日：2005-06-24
申请人： Yusuke Fukuchi
发明人： Yusuke Fukuchi
IPC分类号： H01L21/469 , C23C16/00
CPC分类号： H01L21/02238 , H01J37/32192 , H01L21/02252 , H01L21/0234 , H01L21/28194 , H01L21/31662
摘要： A method for forming an insulating film low in defects, in high throughput and with high reliability includes a first step of oxidizing an article employing a plasma having oxidizing species including ions to form an oxide film having a desired film thickness, and a second step of controlling an amount of the ions in the plasma at a surface of the article to be processed employing neutral radicals.
摘要翻译：用于形成低缺陷，高生产能力和高可靠性的绝缘膜的方法包括：使用具有包括离子的氧化物质的等离子体氧化制品的第一步骤，以形成具有所需膜厚度的氧化膜，第二步骤使用中性自由基来控制待处理制品的表面处的等离子体中的离子的量。

8. 发明申请

US20090170344A1 METHOD FOR FORMING DIELECTRIC FILMS 有权
标题翻译：形成介质膜的方法
公开(公告)号：US20090170344A1
公开(公告)日：2009-07-02
申请号：US12338121
申请日：2008-12-18
申请人： Yusuke Fukuchi , Naomu Kitano
发明人： Yusuke Fukuchi , Naomu Kitano
IPC分类号： H01L21/71
CPC分类号： H01L21/3145 , H01L21/31641 , H01L21/31645
摘要： A method for forming dielectric films including metal nitride silicate on a silicon substrate, comprises a first step of depositing a film containing metal and silicon on a silicon substrate in a non-oxidizing atmosphere using a sputtering method; a second step of forming a film containing nitrogen, metal and silicon by nitriding the film containing metal and silicon; and a third step of forming a metal nitride silicate film by oxidizing the film containing nitrogen, metal and silicon.
摘要翻译：一种用于在硅衬底上形成包括金属氮化硅硅酸盐的电介质膜的方法，包括使用溅射法在非氧化性气氛中在硅衬底上沉积含有金属和硅的膜的第一步骤; 通过氮化含有金属和硅的膜来形成含有氮，金属和硅的膜的第二步骤; 以及通过氧化含有氮，金属和硅的膜来形成金属氮化硅酸盐膜的第三步骤。

9. 发明申请

US20080283507A1 PLASMA TREATMENT APPARATUS AND METHOD OF PLASMA TREATMENT 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20080283507A1
公开(公告)日：2008-11-20
申请号：US12117612
申请日：2008-05-08
申请人： Hideo Kitagawa , Yusuke Fukuchi
发明人： Hideo Kitagawa , Yusuke Fukuchi
IPC分类号： B23K9/00
CPC分类号： H01J37/321 , H01J37/32192 , H01L21/3105
摘要： A plasma treatment apparatus and a method of plasma treatment for reducing generation of Na atoms in the case where a silica glass and the like are used for a member made of dielectric material are provided. The provided plasma treatment apparatus includes a dielectric member having an impurity element forming positive and movable ions, a vacuum chamber partially sealed with the dielectric member, and a radiator radiating electromagnetic wave into the vacuum chamber through the dielectric member to generate plasma in the vacuum chamber and to treat a workpiece using the plasma. The apparatus further includes an electrode on the dielectric member on a surface opposite the surface exposed to the plasma. The generation of Na can be reduced by applying to the plasma a negative DC potential which is lower than a floating potential measured at the surface of the dielectric member exposed to the plasma.
摘要翻译：提供了一种等离子体处理装置和等离子体处理方法，用于在由介电材料制成的部件上使用石英玻璃等的情况下，可以减少Na原子的产生。所提供的等离子体处理装置包括具有形成正和可移动离子的杂质元素的电介质构件，与介电构件部分地密封的真空室，以及通过电介质将电磁波辐射到真空室中以在真空室中产生等离子体并使用等离子体处理工件。该装置还包括在与暴露于等离子体的表面相对的表面上的电介质构件上的电极。通过向等离子体施加低于在暴露于等离子体的电介质的表面处测量的浮动电位的负DC电位，可以降低Na的产生。

10. 发明授权

US08012822B2 Process for forming dielectric films 有权
标题翻译：电介质膜形成工艺
公开(公告)号：US08012822B2
公开(公告)日：2011-09-06
申请号：US12342360
申请日：2008-12-23
申请人： Naomu Kitano , Yusuke Fukuchi , Nobumasa Suzuki , Hideo Kitagawa
发明人： Naomu Kitano , Yusuke Fukuchi , Nobumasa Suzuki , Hideo Kitagawa
IPC分类号： H01L29/72
CPC分类号： H01L21/28229 , C23C14/185 , C23C14/34 , C23C14/5853 , C23C14/5893 , H01L21/02074 , H01L21/28185 , H01L21/3105 , H01L21/3145 , H01L21/31645 , H01L21/321 , H01L29/513 , H01L29/517
摘要： A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon substrate to form a silicon dioxide film; a second step of forming a metal film on the silicon dioxide film in a non-oxidizing atmosphere; a third step of heating in a non-oxidizing atmosphere to diffuse the metal atoms constituting the metal film into the silicon dioxide film; and a fourth step of oxidizing the silicon dioxide film containing the diffused metal atoms to form the film containing the metal atoms, silicon atoms, and oxygen atoms.
摘要翻译：在硅衬底上形成至少含有金属原子，硅原子和氧原子的介电膜的工艺包括：氧化硅衬底表面部分以形成二氧化硅膜的第一步骤; 在非氧化性气氛中在二氧化硅膜上形成金属膜的第二工序; 在非氧化气氛中加热第三步骤，将构成金属膜的金属原子扩散到二氧化硅膜中; 以及氧化含有扩散金属原子的二氧化硅膜以形成含有金属原子，硅原子和氧原子的膜的第四步骤。

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