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    • 6. 发明授权
    • Process for producing semiconductor device
    • 半导体器件的制造方法
    • US06426302B2
    • 2002-07-30
    • US09778943
    • 2001-02-08
    • Hideo Kitagawa
    • Hideo Kitagawa
    • H01L21302
    • H01J37/32357H01J37/32422
    • A plasma processing apparatus having a vacuum vessel and a supporting means for supporting a processing target in the vacuum vessel, the apparatus comprising means for introducing a gas into a plasma generating space, means for feeding electric energy to the gas in the plasma generating space to generate a plasma, a metal member for forming negative ions which is provided on the downstream side of the plasma generating space in such a way that it comes into contact with particles of the plasma, and means for feeding the negative ions to the processing target. Utilizing the electric charge exchange reaction between plasma particles and metal surfaces, negative ions can be formed continuously and in a high density and also the negative ions can be made incident on a processing target to make ashing, etching or cleaning of the processing target to remove unwanted matter therefrom, so that a high processing rate and less charge-up damage can be achieved.
    • 一种等离子体处理装置,其具有真空容器和用于在真空容器内支撑加工对象的支撑装置,该装置包括用于将气体引入等离子体产生空间的装置,用于将电能馈送到等离子体产生空间中的气体的装置 产生等离子体,用于形成负离子的金属构件,其以与等离子体的粒子接触的方式设置在等离子体产生空间的下游侧,以及用于将负离子供给到处理对象的装置。 利用等离子体颗粒和金属表面之间的电荷交换反应,可以连续地和高密度地形成负离子,并且还可以使负离子入射到处理对象上,以使加工对象的灰化,蚀刻或清洁以去除 从而可以实现高处理速率和较少的充电损伤。
    • 8. 发明授权
    • Plasma processing apparatus
    • 等离子体处理装置
    • US06217703B1
    • 2001-04-17
    • US09399112
    • 1999-09-20
    • Hideo Kitagawa
    • Hideo Kitagawa
    • H05H100
    • H01J37/32357H01J37/32422
    • A plasma processing apparatus having a vacuum vessel and a supporting means for supporting a processing target in the vacuum vessel, the apparatus comprising means for introducing a gas into a plasma generating space, means for feeding electric energy to the gas in the plasma generating space to generate a plasma, a metal member for forming negative ions which is provided on the downstream side of the plasma generating space in such a way that it comes into contact with particles of the plasma, and means for feeding the negative ions to the processing target. Utilizing the electric charge exchange reaction between plasma particles and metal surfaces, negative ions can be formed continuously and in a high density and also the negative ions can be made incident on a processing target to make ashing, etching or cleaning of the processing target to remove unwanted matter therefrom, so that a high processing rate and less charge-up damage can be achieved.
    • 一种等离子体处理装置,其具有真空容器和用于在真空容器内支撑加工对象的支撑装置,该装置包括用于将气体引入等离子体产生空间的装置,用于将电能馈送到等离子体产生空间中的气体的装置 产生等离子体,用于形成负离子的金属构件,其以与等离子体的粒子接触的方式设置在等离子体产生空间的下游侧,以及用于将负离子供给到处理对象的装置。 利用等离子体颗粒和金属表面之间的电荷交换反应,可以连续地和高密度地形成负离子,并且还可以使负离子入射到处理对象上,以使加工对象的灰化,蚀刻或清洁以去除 从而可以实现高处理速率和较少的充电损伤。