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1. 发明授权

US07264912B2 Method of producing photoresist 失效
标题翻译：光致抗蚀剂的制造方法
公开(公告)号：US07264912B2
公开(公告)日：2007-09-04
申请号：US10117248
申请日：2002-04-08
申请人： Takeshi Hioki , Kota Tokuhara , Yukio Hanamoto
发明人： Takeshi Hioki , Kota Tokuhara , Yukio Hanamoto
IPC分类号： G03C1/73 , G03F7/00
CPC分类号： G03F7/0045 , G03F7/022 , G03F7/0392
摘要： Provided are a method of producing a photoresist comprising a process of filtrating a raw resist solution containing resist constituent components and a resist solvent dissolving them, using a filter made of at least one resin selected from fluorine-based resins and polyolefins, wherein this filter has been used for filtration of the same or different kind of other raw resist solution and has been washed with a solvent containing the resist solvent toward the reverse direction to the filtration direction, and a method of sequentially producing two or more photoresists using the same production apparatus, wherein this production apparatus is washed with the resist solvent, a solvent other than this resist solvent capable of dissolving or decomposing the resist constituent components, and the resist solvent, in this order, after production of the photoresist and before production of the subsequent photoresist.
摘要翻译：提供一种光致抗蚀剂的制造方法，其特征在于，使用由选自氟系树脂和聚烯烃中的至少一种树脂制成的过滤器，过滤由含有抗蚀剂构成成分的原始抗蚀剂溶液和溶解了抗蚀剂溶剂的抗蚀剂溶剂的方法，用于过滤相同或不同种类的其他原始抗蚀剂溶液，并且已经用含有抗蚀剂溶剂的溶剂朝向与过滤方向相反的方向进行过滤，以及使用相同的生产设备依次生产两个或更多个光致抗蚀剂的方法其中，该制造装置在制造光致抗蚀剂之后并且在制造后续的光致抗蚀剂之前，依次用抗蚀剂溶剂，除了能够溶解或分解抗蚀剂构成成分的抗蚀剂溶剂之外的溶剂和抗蚀剂溶剂洗涤。

2. 发明授权

US07176143B2 Method for evaluating solution for a coating film for semiconductors 有权
标题翻译：评价半导体涂膜溶液的方法
公开(公告)号：US07176143B2
公开(公告)日：2007-02-13
申请号：US10948162
申请日：2004-09-24
申请人： Yukio Hanamoto , Satoshi Yamamoto
发明人： Yukio Hanamoto , Satoshi Yamamoto
IPC分类号： H01L21/31
CPC分类号： H01L21/312 , C09D133/066 , H01L21/02118 , H01L21/0212 , H01L21/02282 , H01L21/3127 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a method for evaluating a solution for a coating film for semiconductor, which comprises measuring Clogging Degree of a solution for a coating film for semiconductor when the solution is filtrated through a filter having an average pore size of 0.01 to 0.4 μm, andestimating quality of the coating film formed from the solution,wherein the Clogging Degree is defined by the following formula: Clogging Degree=V2/V1 V1: A value of linear velocity of filtrate (filtrating rate per 1 cm2 of filter (g/(cm2·min)) at initial standard point in the case that a solution is filtrated at a fixed pressure and temperature V2: A value of linear velocity of filtrate at the point the predetermined weight of filtrate discharged from the initial standard point According to the present method, quality of coating films can be figured out without actual formation of the coating films, and solutions for coating films can be evaluated thereby.
摘要翻译：本发明提供了一种用于评价半导体用涂膜的溶液的方法，该方法包括当溶液通过平均孔径为0.01至0.4μm的过滤器过滤时测量半导体涂膜的溶液的堵塞度，并估算由溶液形成的涂膜的质量，其中堵塞度由下式定义：<？in-line-formula description =“In-line formula”end =“lead”？>堵塞度= V2 / V1 <？in-line-formula description =“在线公式”end =“tail”？> V1：滤液线速度的值（过滤器每1cm 2的过滤速度（g /(cm².min））在溶液在固定压力和温度下过滤的情况下的初始标准点V2：在滤液预定重量点的滤液线速度值从初始标准点排出根据本方法，可以计算出涂膜的质量而不会实际形成涂膜，因此可以评价涂膜的溶液。

3. 发明授权

US5080997A Process for preparing a positive resist composition by mixing the condensation product of a quinone diazide sulfonyl halogenide and a phenol with a resin solution without isolating the condensation product from the crude mixture 失效
标题翻译：通过混合二氢化亚油酸酯和酚醛树脂溶液的凝聚产物，不会从凝乳混合物分离凝结产物来制备阳性组合物的方法
公开(公告)号：US5080997A
公开(公告)日：1992-01-14
申请号：US446153
申请日：1989-12-05
申请人： Takeshi Hioki , Koji Kuwana , Jun Tomioka , Hirotoshi Nakanishi , Yasunori Uetani , Yukio Hanamoto , Fumio Oi
发明人： Takeshi Hioki , Koji Kuwana , Jun Tomioka , Hirotoshi Nakanishi , Yasunori Uetani , Yukio Hanamoto , Fumio Oi
IPC分类号： C08L61/04 , C08L61/06 , G03F7/022 , G03F7/023
CPC分类号： G03F7/023
摘要： A process for preparing a positive resist composition, which process includes the steps of condensation reacting a quinone diazide sulfonyl halogenide with a phenol compound, mixing a condensation reaction mixture with a solution of an alkali-soluble resin in a resist solvent and removing impurities from the mixture, whereby the overall processing time can be shortened.

4. 发明授权

US5059507A Positive resist composition containing quinone diazide sulfonic acid ester of a phenol compound and an alkali soluble resin 失效
标题翻译：酚醛化合物和碱性可溶性树脂的喹啉二异氰酸酯的积极抗性组合物
公开(公告)号：US5059507A
公开(公告)日：1991-10-22
申请号：US364123
申请日：1989-06-12
申请人： Yasunori Uetani , Makoto Hanabata , Hirotoshi Nakanishi , Koji Kuwana , Yukio Hanamoto , Fumio Oi
发明人： Yasunori Uetani , Makoto Hanabata , Hirotoshi Nakanishi , Koji Kuwana , Yukio Hanamoto , Fumio Oi
IPC分类号： G03F7/022 , H01L21/027
CPC分类号： G03F7/022
摘要： A quinone diazide sulfonic acid ester of a phenol compound of the general formula (I): ##STR1## wherein Y.sub.1 and Y.sub.2 are each a hydrogen atom, an alkyl group or a hydroxyl group, provided that at least one of Y.sub.1 and Y.sub.2 is a hydroxyl group; Z.sub.1, Z.sub.2, Z.sub.3, Z.sub.4, Z.sub.5, Z.sub.6 and Z.sub.7 are the same or different and each a hydrogen atom, a hydroxyl group, an alkyl group, a cycloalkyl group, an aryl group or halogen atom, provided that at least two of Z.sub.1, Z.sub.2, Z.sub.3, Z.sub.4, Z.sub.5, Z.sub.6 and Z.sub.7 are hydroxyl groups; R.sub.1, R.sub.2 and R.sub.3 are the same or different and each a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group or an aryl group provides a positive resist composition having a high .gamma.-value.

5. 发明申请

US20050095729A1 Method for evaluating solution for coating film for semiconductor 有权
标题翻译：评估半导体涂膜溶液的方法
公开(公告)号：US20050095729A1
公开(公告)日：2005-05-05
申请号：US10948162
申请日：2004-09-24
申请人： Yukio Hanamoto , Satoshi Yamamoto
发明人： Yukio Hanamoto , Satoshi Yamamoto
IPC分类号： H01L21/66 , C09D133/06 , H01L21/027 , H01L21/312 , H01L23/532
CPC分类号： H01L21/312 , C09D133/066 , H01L21/02118 , H01L21/0212 , H01L21/02282 , H01L21/3127 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a method for evaluating a solution for a coating film for semiconductor, which comprises measuring Clogging Degree of a solution for a coating film for semiconductor when the solution is filtrated through a filter having an average pore size of 0.01 to 0.4 μm, and estimating quality of the coating film formed from the solution, wherein the Clogging Degree is defined by the following formula: Clogging Degree=V2/V1 V1: A value of linear velocity of filtrate (filtrating rate per 1 cm2 of filter (g/(cm2·min)) at initial standard point in the case that a solution is filtrated at a fixed pressure and temperature V2: A value of linear velocity of filtrate at the point the predetermined weight of filtrate discharged from the initial standard point According to the present method, quality of coating films can be figured out without actual formation of the coating films, and solutions for coating films can be evaluated thereby.
摘要翻译：本发明提供了一种用于评价半导体用涂膜的溶液的方法，该方法包括当溶液通过平均孔径为0.01至0.4μm的过滤器过滤时测量半导体涂膜的溶液的堵塞度，并估算由溶液形成的涂膜的质量，其中堵塞度由下式定义：<？in-line-formula description =“In-line formula”end =“lead”？>堵塞度= V2 / V1 <？in-line-formula description =“在线公式”end =“tail”？> V1：滤液线速度的值（过滤器每1cm 2的过滤速度（g /(cm².min））在溶液在固定压力和温度下过滤的情况下的初始标准点V2：在滤液预定重量点的滤液线速度值从初始标准点排出根据本方法，涂膜的质量可以是数字在没有实际形成涂膜的情况下，可以评价涂膜的溶液。

6. 发明授权

US5290656A Resist composition, novel phenol compound and quinone diazide sulfonic acid ester of novel phenol compound 失效
标题翻译：抗酚组合物，新型苯酚化合物和醌二叠氮磺酸酯新型酚类化合物
公开(公告)号：US5290656A
公开(公告)日：1994-03-01
申请号：US5429
申请日：1993-01-19
申请人： Yasunori Uetani , Makoto Hanabata , Hirotoshi Nakanishi , Koji Kuwana , Yukio Hanamoto , Fumio Oi , Jun Tomioka
发明人： Yasunori Uetani , Makoto Hanabata , Hirotoshi Nakanishi , Koji Kuwana , Yukio Hanamoto , Fumio Oi , Jun Tomioka
IPC分类号： G03F7/022 , G03C1/52 , C07C309/76
CPC分类号： G03F7/022
摘要： A quinone diazide sulfonic acid ester of a phenol compound of the general formula (I): ##STR1## wherein Y.sub.1, Y.sub.2, Y.sub.3 and Y.sub.4 are the same or different and each a hydrogen atom, an alkyl group, a halogen atom or a hydroxyl group, provided that at least one of Y.sub.1, Y.sub.2, Y.sub.3 and Y.sub.4 is a hydroxyl group; Z.sub.1, Z.sub.2, Z.sub.3, Z.sub.4, Z.sub.5 and Z.sub.6 are the same or different and each a hydrogen atom, an alkyl, an aryl group, a halogen atom or a hydroxyl group, provided that at least one of Z.sub.1, Z.sub.2, Z.sub.3, Z.sub.4, Z.sub.5 and Z.sub.6 is a hydroxyl group; X is ##STR2## in which R.sub.1 and R.sub.2 are the same or different and each a hydrogen atom, an alkyl group, an alkenyl group, a cyclo-alkyl group, an alkoxy group or an aryl group, provided that when at least one of R.sub.1 and R.sub.2 is a hydrogen atom, an alkyl or aryl group is present at the ortho position to a hydroxyl group which is present at the ortho position to X provides a positive resist composition which has a high .gamma.-value.
摘要翻译：通式（I）的酚化合物的醌二叠氮磺酸酯：其中Y 1，Y 2，Y 3和Y 4相同或不同，各自为氢原子，烷基，卤素原子或羟基，条件是Y 1，Y 2，Y 3和Y 4中的至少一个为羟基; Z 1，Z 2，Z 3，Z 4，Z 5和Z 6相同或不同，各自为氢原子，烷基，芳基，卤素原子或羟基，条件是Z1，Z2，Z3，Z4中的至少一个 Z5和Z6是羟基; X为，其中R 1和R 2相同或不同，并且各自为氢原子，烷基，烯基，环烷基，烷氧基或芳基，条件是当至少一个 R1和R2是氢原子，烷基或芳基存在于与X的邻位存在的羟基的邻位，提供具有高γ值的正性抗蚀剂组合物。

7. 发明授权

US5368987A Process for producing resist composition 失效
标题翻译：抗蚀剂组合物的抗蚀剂组合物和方法
公开(公告)号：US5368987A
公开(公告)日：1994-11-29
申请号：US203616
申请日：1994-02-28
申请人： Yukio Hanamoto , Hiroshi Takagaki , Ayako Ida
发明人： Yukio Hanamoto , Hiroshi Takagaki , Ayako Ida
IPC分类号： G03F7/004 , G03F7/022 , G03F7/039 , G03F7/16 , H01L21/027 , G03C1/76
CPC分类号： G03F7/16 , G03F7/0048 , Y10S430/111
摘要： This invention provides a process for producing a resist composition in which the content of relatively large undissolved particles is low just after production of the composition and the content of relatively large undissolved particles increases only to a small extent even if the composition is stored for a long period of time. Thus, this invention provides a process for producing a resist composition which comprises filtering a mixture of an alkali-soluble resin, a radiation-sensitive compound and a solvent by the use of a filter of which pore diameter is 0.1 .mu.m or below and of which particle-removing performance is 99% or above. Further, this invention provides also a resist composition comprising an alkali-soluble resin, a radiation-sensitive compound and an organic solvent not simultaneously having both acetoxy group and alkoxy group in its molecule, said composition containing undissolved particles having a particle diameter of 0.25 .mu.m or above in a number of 100 particles/ml or below, said undissolved particles being constituted of two particle groups one of which (the first group) has a particle diameter of 0.25-0.3 .mu.m and the other of which (the second group) has a particle diameter larger than 0.3 .mu.m, and the content of said first particle group having a particle diameter of 0.25-0.3 .mu.m being 50 particles/ml or below. According to the process of this invention, a resist composition excellent in storage stability, etc. can be obtained. By using said resist composition, the product yield in the production of integrated circuit can be improved.
摘要翻译：本发明提供一种制备抗蚀剂组合物的方法，其中相对较大的未溶解颗粒的含量在组合物生产后即低，并且即使组合物长期储存，相对较大的未溶解颗粒的含量也增加很小一段的时间。因此，本发明提供了一种抗蚀剂组合物的制造方法，该方法包括使用孔径为0.1μm以下的过滤器过滤碱溶性树脂，辐射敏感性化合物和溶剂的混合物，以及其除尘性能为99％以上。此外，本发明还提供了包含碱溶性树脂，辐射敏感性化合物和在其分子中不同时具有乙酰氧基和烷氧基的有机溶剂的抗蚀剂组合物，所述组合物含有粒径为0.25μm的未溶解颗粒 m以上的数量为100个/ ml以下，所述未溶解颗粒由两个颗粒组成，其中一个（第一组）具有0.25-0.3μm的粒径，另一个（第二组）的粒径大于0.3μm，粒径为0.25〜0.3μm的第一粒子群的含量为50个/ ml以下。根据本发明的方法，可以获得保存稳定性优异的抗蚀剂组合物。通过使用所述抗蚀剂组合物，可以提高集成电路的制造中的产品产率。

8. 发明授权

US5360696A Resist composition 失效
标题翻译：抗蚀组成
公开(公告)号：US5360696A
公开(公告)日：1994-11-01
申请号：US192817
申请日：1994-02-07
申请人： Yukio Hanamoto , Hiroshi Takagaki , Ayako Ida
发明人： Yukio Hanamoto , Hiroshi Takagaki , Ayako Ida
IPC分类号： G03F7/004 , G03F7/022 , G03F7/039 , G03F7/16 , H01L21/027 , G03C1/76
CPC分类号： G03F7/16 , G03F7/0048 , Y10S430/111
摘要： This invention provides a process for producing a resist composition in which the content of relatively large undissolved particles is low just after production of the composition and the content of relatively large undissolved particles increases only to a small extent even if the composition is stored for a long period of time. Thus, this invention provides a process for producing a resist composition which comprises filtering a mixture of an alkali-soluble resin, a radiation-sensitive compound and a solvent by the use of a filter of which pore diameter is 0.1 .mu.m or below and of which particle-removing performance is 99% or above. Further, this invention provides also a resist composition comprising an alkali-soluble resin, a radiation-sensitive compound and an organic solvent not simultaneously having both acetoxy group and alkoxy group in its molecule, said composition containing undissolved particles having a particle diameter of 0.25 .mu.m or above in a number of 100 particles/ml or below, said undissolved particles being constituted of two particle groups one of which (the first group) has a particle diameter of 0.25-0.3 .mu.m and the other of which (the second group) has a particle diameter larger than 0.3 .mu.m, and the content of said first particle group having a particle diameter of 0.25-0.3 .mu.m being 50 particles/ml or below.
摘要翻译：本发明提供一种制备抗蚀剂组合物的方法，其中相对较大的未溶解颗粒的含量在组合物生产后即低，并且即使组合物长期储存，相对较大的未溶解颗粒的含量也增加很小一段的时间。因此，本发明提供了一种抗蚀剂组合物的制造方法，该方法包括使用孔径为0.1μm以下的过滤器过滤碱溶性树脂，辐射敏感性化合物和溶剂的混合物，以及其除尘性能为99％以上。此外，本发明还提供了包含碱溶性树脂，辐射敏感性化合物和在其分子中不同时具有乙酰氧基和烷氧基的有机溶剂的抗蚀剂组合物，所述组合物含有粒径为0.25μm的未溶解颗粒 m以上的数量为100个/ ml以下，所述未溶解颗粒由两个颗粒组成，其中一个（第一组）具有0.25-0.3μm的粒径，另一个（第二组）的粒径大于0.3μm，粒径为0.25〜0.3μm的第一粒子群的含量为50个/ ml以下。

9. 发明申请

US20060073411A1 Chemically amplified resist composition 审中-公开
标题翻译：化学放大抗蚀剂组合物
公开(公告)号：US20060073411A1
公开(公告)日：2006-04-06
申请号：US11233130
申请日：2005-09-23
申请人： Satoshi Yamamoto , Yukio Hanamoto , Koji Kuwana
发明人： Satoshi Yamamoto , Yukio Hanamoto , Koji Kuwana
IPC分类号： G03C1/76
CPC分类号： G03F7/0397 , G03F7/0392
摘要： The present invention provides a chemically amplified resist composition comprising a treated resin (1), an acid generator and a solvent, wherein resin (1) is (a) a (meth)acrylic resin which is insoluble or poorly soluble in an alkali aqueous solution and becomes soluble in an alkali aqueous solution by the action of an acid, and which comprises a repeating unit having an alicyclic hydrocarbon group in its side chain or (b) a styrenic resin which is insoluble or poorly soluble in an alkali aqueous solution and becomes soluble in an alkali aqueous solution by the action of an acid, and which comprises a repeating unit derived from hydroxystyrene, and wherein the treated resin (1) is obtained by (A) contacting crude resin (1) with activated carbon at 40 to 90° C. to obtain hemi-treated crude resin (1) and contacting the hemi-treated resin (1) with at least one member selected from the group consisting of kieselguhr and silica gel, or (B) contacting crude resin (1) with activated carbon and at least one member selected from the group consisting of kieselguhr and silica gel at 40 to 90 ° C.
摘要翻译：本发明提供一种化学增幅抗蚀剂组合物，其包含处理过的树脂（1），酸产生剂和溶剂，其中树脂（1）是（a）在碱水溶液中不溶或难溶的（甲基）丙烯酸树脂并且通过酸的作用而溶于碱性水溶液中，并且其侧链含有具有脂环族烃基的重复单元或（b）在碱性水溶液中不溶或难溶于苯乙烯树脂，成为通过酸的作用可溶于碱性水溶液，其中含有由羟基苯乙烯衍生的重复单元，其中，（A）将粗树脂（1）与40〜90的活性炭接触而得到得到半经处理的粗树脂（1），并将半经处理的树脂（1）与选自硅藻土和硅胶的至少一种物质接触，或（B）使粗树脂（1）与活性炭和选自硅藻土和硅胶中的至少一种在40至90℃。

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