专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5985519A Method of manufacturing semiconductor device using top antireflection film 失效
标题翻译：使用顶部防反射膜制造半导体器件的方法
公开(公告)号：US5985519A
公开(公告)日：1999-11-16
申请号：US960314
申请日：1997-10-29
申请人： Yoko Kakamu , Yuichiro Yanagishita
发明人： Yoko Kakamu , Yuichiro Yanagishita
IPC分类号： G03F7/11 , G03F7/09 , G03F7/20 , H01L21/027
CPC分类号： G03F7/091 , Y10S430/151
摘要： A method of manufacturing a semiconductor device for patterning a semiconductor substrate by photolithography, the semiconductor substrate having a transparent or semitransparent layer having a high transmissivity at an exposure wavelength .lambda., and the transparent or semitransparent layer being formed on an underlying structure with a surface having a high reflectivity at the exposure wavelength .lambda.. The method comprises the steps of: forming a resist layer having a refractive index n.sub.r and a thickness d.sub.r on the transparent or semitransparent layer; forming a top antireflection film having a refractive index n.sub.a and a thickness d.sub.a on the resist layer; selectively exposing the resist layer via the top antireflection film with light having the exposure wavelength .lambda.; removing the top antireflection film; and developing a latent image in the resist layer to form a resist pattern, wherein an optical thickness n.sub.a d.sub.a of the top antireflection film and an optical thickness n.sub.r d.sub.r of the resist layer are selected so that a size change in the resist pattern becomes small even if the thickness of the transparent or semitransparent layer changes. This method provides an excellent size precision in patterning a transparent or semitransparent layer formed on a high reflectivity surface.
摘要翻译：一种通过光刻法制造半导体衬底图案化的半导体器件的方法，所述半导体衬底具有在曝光波长λ下具有高透射率的透明或半透明层，并且所述透明或半透明层形成在具有表面的基底结构上曝光波长λ的高反射率。该方法包括以下步骤：在透明或半透明层上形成具有折射率nr和厚度dr的抗蚀剂层; 在抗蚀剂层上形成具有折射率na和厚度da的顶部抗反射膜; 通过具有曝光波长λ的光通过顶部抗反射膜选择性地曝光抗蚀剂层; 去除顶部抗反射膜; 并且在抗蚀剂层中显影潜像以形成抗蚀剂图案，其中选择顶部抗反射膜的光学厚度nada和抗蚀剂层的光学厚度nrdr，使得抗蚀剂图案的尺寸变化变小，即使透明或半透明层的厚度发生变化。该方法在形成在高反射率表面上的透明或半透明层的图案化方面提供了优异的尺寸精度。

2. 发明授权

US5624791A Pattern forming method using mask 失效
标题翻译：使用掩模的图案形成方法
公开(公告)号：US5624791A
公开(公告)日：1997-04-29
申请号：US463930
申请日：1995-06-05
申请人： Toshiaki Kawabata , Kenji Nakagawa , Seiichiro Yamaguchi , Masao Taguchi , Kazuhiko Sumi , Yuichiro Yanagishita
发明人： Toshiaki Kawabata , Kenji Nakagawa , Seiichiro Yamaguchi , Masao Taguchi , Kazuhiko Sumi , Yuichiro Yanagishita
IPC分类号： G03F1/00 , G03F1/34 , G03F1/68 , G03F1/80 , H01L21/027 , H01L21/30 , G03C5/00
CPC分类号： G03F1/29 , G03F1/30 , G03F1/34 , G03F1/28
摘要： A mask includes a transparent layer which is transparent with respect to a light which is used for an exposure, and a mask pattern layer which is formed on the transparent layer. At least a portion of the mask patterns layer is made up solely of a phase shift layer for transmitting the light, so that a phase shift occurs between a phase of the light transmitted through the phase shift layer and a phase of the light transmitted through a portion of the mask having no phase shift layer.
摘要翻译：掩模包括相对于用于曝光的光是透明的透明层，以及形成在透明层上的掩模图案层。掩模图案层的至少一部分仅由用于透射光的相移层构成，从而在通过相移层传输的光的相位与通过相移层传输的光的相位之间发生相移没有相移层的掩模部分。

3. 发明授权

US5489509A Mask, mask producing method and pattern forming method using mask 失效
标题翻译：掩模，掩模生产方法和使用掩模的图案形成方法
公开(公告)号：US5489509A
公开(公告)日：1996-02-06
申请号：US54608
申请日：1993-04-30
申请人： Toshiaki Kawabata , Kenji Nakagawa , Seiichiro Yamaguchi , Masao Taguchi , Kazuhiko Sumi , Yuichiro Yanagishita
发明人： Toshiaki Kawabata , Kenji Nakagawa , Seiichiro Yamaguchi , Masao Taguchi , Kazuhiko Sumi , Yuichiro Yanagishita
IPC分类号： G03F1/00 , G03F1/34 , G03F1/68 , G03F1/80 , H01L21/027 , H01L21/30 , G03F9/00
CPC分类号： G03F1/29 , G03F1/30 , G03F1/34 , G03F1/28
摘要： A mask includes a first layer which is transparent with respect to an exposure light, and a phase shift mask pattern which is formed on the transparent layer. The pattern includes one or more phase shift regions adapted for transmitting the exposure light impinging thereon and shifting the phase of the transmitted light relative to the phase of light which passes through a portion of the mask having no phase shift layer.
摘要翻译：掩模包括相对于曝光光透明的第一层和形成在透明层上的相移掩模图案。该图案包括一个或多个相移区域，其适于透射照射在其上的曝光光，并且相对于穿过没有相移层的掩模的一部分的光的相位移动透射光的相位。

4. 发明授权

US5786115A Mask producing method 失效
标题翻译：面膜生产方法
公开(公告)号：US5786115A
公开(公告)日：1998-07-28
申请号：US792070
申请日：1997-02-03
申请人： Toshiaki Kawabata , Kenji Nakagawa , Seiichiro Yamaguchi , Masao Taguchi , Kazuhiko Sumi , Yuichiro Yanagishita
发明人： Toshiaki Kawabata , Kenji Nakagawa , Seiichiro Yamaguchi , Masao Taguchi , Kazuhiko Sumi , Yuichiro Yanagishita
IPC分类号： G03F1/00 , G03F1/34 , G03F1/68 , G03F1/80 , H01L21/027 , H01L21/30 , G03F9/00
CPC分类号： G03F1/29 , G03F1/30 , G03F1/34 , G03F1/28
摘要： A mask includes a transparent layer which is transparent with respect to a light which is used for an exposure, and a mask pattern layer which is formed on the transparent layer. At least a portion of the mask pattern layer is made up solely of a phase shift layer for transmitting the light, so that a phase shift occurs between a phase of the light transmitted through the phase shift layer and a phase of the light transmitted through a portion of the mask having no phase shift layer.
摘要翻译：掩模包括相对于用于曝光的光是透明的透明层，以及形成在透明层上的掩模图案层。掩模图案层的至少一部分仅由用于透射光的相移层构成，使得在透过相移层的光的相位与透过相移层的光的相位之间发生相移没有相移层的掩模部分。

5. 发明授权

US5674646A Mask producing method 失效
标题翻译：面膜生产方法
公开(公告)号：US5674646A
公开(公告)日：1997-10-07
申请号：US463857
申请日：1995-06-05
申请人： Toshiaki Kawabata , Kenji Nakagawa , Seiichiro Yamaguchi , Masao Taguchi , Kazuhiko Sumi , Yuichiro Yanagishita
发明人： Toshiaki Kawabata , Kenji Nakagawa , Seiichiro Yamaguchi , Masao Taguchi , Kazuhiko Sumi , Yuichiro Yanagishita
IPC分类号： G03F1/00 , G03F1/34 , G03F1/68 , G03F1/80 , H01L21/027 , H01L21/30 , G03F9/00
CPC分类号： G03F1/29 , G03F1/30 , G03F1/34 , G03F1/28
摘要： A mask includes a transparent layer which is transparent with respect to a light which is used for an exposure, and a mask pattern layer which is formed on the transparent layer. At least a portion of the mask pattern layer is made up solely of a phase shift layer for transmitting the light, so that a phase shift occurs between a phase of the light transmitted through the phase shift layer and a phase of the light transmitted through a portion of the mask having no phase shift layer.
摘要翻译：掩模包括相对于用于曝光的光是透明的透明层，以及形成在透明层上的掩模图案层。掩模图案层的至少一部分仅由用于透射光的相移层构成，使得在透过相移层的光的相位与透过相移层的光的相位之间发生相移没有相移层的掩模部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式