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1. 发明申请

US20050084990A1 Endpoint detection in manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件中的端点检测
公开(公告)号：US20050084990A1
公开(公告)日：2005-04-21
申请号：US10685484
申请日：2003-10-16
申请人： Yuh-Turng Liu , Kuang-Chao Chen , Hsueh-Hao Shih , Yun-Chi Yang , Yung-Tai Hung
发明人： Yuh-Turng Liu , Kuang-Chao Chen , Hsueh-Hao Shih , Yun-Chi Yang , Yung-Tai Hung
IPC分类号： G01R31/26 , H01L21/302 , H01L21/3105 , H01L21/44 , H01L21/461 , H01L21/4763 , H01L21/66 , H01L21/768
CPC分类号： H01L21/31053 , H01L21/76819
摘要： A method of manufacturing a semiconductor device that comprises the steps of providing a semiconductor wafer including a patterned layer, forming a first insulating layer over the patterned layer of the semiconductor wafer, the first insulating layer including a first index of refraction, forming a second insulating layer over the first insulating layer, the second insulating layer including a second index of refraction smaller than the first index of refraction, removing the second insulating layer by a planarizing process, and detecting a change in index of refraction during the planarizing process.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：提供包括图案化层的半导体晶片，在半导体晶片的图案化层上形成第一绝缘层，第一绝缘层包括第一折射率，形成第二绝缘层第二绝缘层包括小于第一折射率的第二折射率，通过平坦化处理去除第二绝缘层，并且在平坦化处理期间检测折射率的变化。

2. 发明授权

US06688945B2 CMP endpoint detection system 有权
标题翻译： CMP端点检测系统
公开(公告)号：US06688945B2
公开(公告)日：2004-02-10
申请号：US10063135
申请日：2002-03-25
申请人： Yuh-Turng Liu
发明人： Yuh-Turng Liu
IPC分类号： B24B100
CPC分类号： B24B37/26 , B24B37/013 , B24B37/16 , B24B37/205 , B24B49/12 , B24D7/12
摘要： An endpoint detection system in a CMP apparatus has a polishing platen, a polishing pad covering the polishing platen, a chamber located in the polishing platen, and a gas flow system arranged in a periphery of the chamber. The gas flow system has a gas inlet used to flow dry gas into the chamber and a gas outlet used to evacuate water vapor in the chamber. Since the gas flow system can evacuate the water vapor in the chamber, the problem of contaminants such as water droplets has been solved. The endpoint detection can thus be precisely controlled.
摘要翻译： CMP装置中的端点检测系统具有研磨台板，覆盖研磨台板的抛光垫，位于研磨台板中的室以及设置在室周边的气流系统。气体流动系统具有用于将干燥气体流入室中的气体入口和用于抽空腔室中的水蒸气的气体出口。由于气体流动系统可以抽空腔室中的水蒸气，所以已经解决了水滴等污染物的问题。因此可以精确控制端点检测。

3. 发明授权

US06524176B1 Polishing pad 有权
标题翻译：抛光垫
公开(公告)号：US06524176B1
公开(公告)日：2003-02-25
申请号：US10063136
申请日：2002-03-25
申请人： Chih-Hsien Cheng , Yuh-Turng Liu
发明人： Chih-Hsien Cheng , Yuh-Turng Liu
IPC分类号： B24D1100
CPC分类号： B24B37/22 , B24B37/013 , B24D7/12
摘要： A polishing pad has a first layer, a second layer, a hole and a plug. The hole is formed in the polishing pad and has a first section in the first layer of the polishing pad and a second section in a second layer of the polishing pad. The plug is embedded in the hole and has an upper portion and a lower portion. The upper portion of the plug fits into the first section of the hole, and the lower portion of the plug fits into the second section of the hole. Since the plug has a height of the polishing pad, the problem of depositions, such as water droplets, has been solved. The endpoint detection can thus be precisely controlled.
摘要翻译：抛光垫具有第一层，第二层，孔和塞。该孔形成在抛光垫中，并且在抛光垫的第一层中具有第一部分，在抛光垫的第二层中具有第二部分。插头嵌入孔中并具有上部和下部。插头的上部装配到孔的第一部分中，并且插头的下部装配到孔的第二部分中。由于插头具有抛光垫的高度，因此已经解决了诸如水滴的沉积问题。因此可以精确控制端点检测。

4. 发明授权

US07759734B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07759734B2
公开(公告)日：2010-07-20
申请号：US12044615
申请日：2008-03-07
申请人： Yuh-Turng Liu , Shyan-Yhu Wang
发明人： Yuh-Turng Liu , Shyan-Yhu Wang
IPC分类号： H01L29/76 , H01L23/58 , H01L29/94
CPC分类号： H01L21/823481 , H01L21/761 , H01L29/0878 , H01L29/402 , H01L29/41766 , H01L29/4238 , H01L29/7809 , H01L29/7811 , H01L29/7816
摘要： A semiconductor device including a plurality of doped regions, a metal layer and a polysilicon layer is provided. The doped regions are disposed in a substrate. The metal layer includes a plurality of metal line patterns. The polysilicon layer disposed between the substrate and the metal layer includes a gate pattern and at least one guard ring pattern. The at least one guard ring pattern connects to the gate pattern and surrounds at least one of the metal line patterns. One of the metal line patterns connects to the gate pattern. The others of the metal line patterns connect to one of the doped regions in the substrate.
摘要翻译：提供了包括多个掺杂区域，金属层和多晶硅层的半导体器件。掺杂区域设置在基板中。金属层包括多个金属线图案。设置在基板和金属层之间的多晶硅层包括栅极图案和至少一个保护环图案。至少一个保护环图案连接到栅极图案并且围绕金属线图案中的至少一个。金属线图案之一连接到栅极图案。金属线图案中的其它图案连接到衬底中的一个掺杂区域。

5. 发明申请

US20090224336A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090224336A1
公开(公告)日：2009-09-10
申请号：US12044615
申请日：2008-03-07
申请人： Yuh-Turng Liu , Shyan-Yhu Wang
发明人： Yuh-Turng Liu , Shyan-Yhu Wang
IPC分类号： H01L27/088
CPC分类号： H01L21/823481 , H01L21/761 , H01L29/0878 , H01L29/402 , H01L29/41766 , H01L29/4238 , H01L29/7809 , H01L29/7811 , H01L29/7816
摘要： A semiconductor device including a plurality of doped regions, a metal layer and a polysilicon layer is provided. The doped regions are disposed in a substrate. The metal layer includes a plurality of metal line patterns. The polysilicon layer disposed between the substrate and the metal layer includes a gate pattern and at least one guard ring pattern. The at least one guard ring pattern connects to the gate pattern and surrounds at least one of the metal line patterns. One of the metal line patterns connects to the gate pattern. The others of the metal line patterns connect to one of the doped regions in the substrate.
摘要翻译：提供了包括多个掺杂区域，金属层和多晶硅层的半导体器件。掺杂区域设置在基板中。金属层包括多个金属线图案。设置在基板和金属层之间的多晶硅层包括栅极图案和至少一个保护环图案。至少一个保护环图案连接到栅极图案并且围绕金属线图案中的至少一个。金属线图案之一连接到栅极图案。金属线图案中的其它图案连接到衬底中的一个掺杂区域。

6. 发明授权

US07354523B2 Methods for sidewall etching and etching during filling of a trench 有权
标题翻译：在填充沟槽期间侧壁蚀刻和蚀刻的方法
公开(公告)号：US07354523B2
公开(公告)日：2008-04-08
申请号：US10872086
申请日：2004-06-17
申请人： Yuh-Turng Liu
发明人： Yuh-Turng Liu
IPC分类号： H01L21/302
CPC分类号： H01L21/76224 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/31111 , H01L21/31612 , H01L21/31625 , H01L21/76877 , Y10S438/942 , Y10S438/973
摘要： A method for sidewall etching includes providing a substrate having a trench defined therein, with the trench having fill material disposed over a bottom thereof, along a sidewall thereof, and at the trench opening. The fill material along the sidewall of the trench and at the trench opening is removed without removing the fill material disposed over the bottom of the trench. The fill material along the sidewall and at the trench opening may be removed without removing the fill material disposed over the bottom of the trench by inhibiting a reaction between an etchant and the fill material over the bottom of the trench. The reaction between the etchant and the fill material may be inhibited by causing an air bubble to form at the bottom of the trench. The air bubble may be formed by inverting the substrate, and immersing the inverted substrate in an etchant.
摘要翻译：一种用于侧壁蚀刻的方法包括提供具有限定在其中的沟槽的衬底，沟槽具有沿着其侧壁设置在其底部上的填充材料，并且在沟槽开口处。沿着沟槽的侧壁和沟槽开口处的填充材料被去除，而不去除设置在沟槽底部上的填充材料。沿着侧壁和沟槽开口处的填充材料可以通过抑制蚀刻剂和沟槽底部上的填充材料之间的反应而去除设置在沟槽底部上的填充材料。可以通过在沟槽的底部形成气泡来抑制蚀刻剂和填充材料之间的反应。气泡可以通过反转衬底并将反转的衬底浸入蚀刻剂中而形成。

7. 发明申请

US20050279732A1 Methods for sidewall etching and etching during filling of a trench 有权
标题翻译：在填充沟槽期间侧壁蚀刻和蚀刻的方法
公开(公告)号：US20050279732A1
公开(公告)日：2005-12-22
申请号：US10872086
申请日：2004-06-17
申请人： Yuh-Turng Liu
发明人： Yuh-Turng Liu
IPC分类号： B44C1/22 , C23F1/00 , H01L21/311 , H01L21/316 , H01L21/762 , H01L21/768
CPC分类号： H01L21/76224 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/31111 , H01L21/31612 , H01L21/31625 , H01L21/76877 , Y10S438/942 , Y10S438/973
摘要： A method for sidewall etching includes providing a substrate having a trench defined therein, with the trench having fill material disposed over a bottom thereof, along a sidewall thereof, and at the trench opening. The fill material along the sidewall of the trench and at the trench opening is removed without removing the fill material disposed over the bottom of the trench. The fill material along the sidewall and at the trench opening may be removed without removing the fill material disposed over the bottom of the trench by inhibiting a reaction between an etchant and the fill material over the bottom of the trench. The reaction between the etchant and the fill material may be inhibited by causing an air bubble to form at the bottom of the trench. The air bubble may be formed by inverting the substrate, and immersing the inverted substrate in an etchant.
摘要翻译：一种用于侧壁蚀刻的方法包括提供具有限定在其中的沟槽的衬底，沟槽具有沿着其侧壁设置在其底部上的填充材料，并且在沟槽开口处。沿着沟槽的侧壁和沟槽开口处的填充材料被去除，而不去除设置在沟槽底部上的填充材料。沿着侧壁和沟槽开口处的填充材料可以通过抑制蚀刻剂和沟槽底部上的填充材料之间的反应而去除设置在沟槽底部上的填充材料。可以通过在沟槽的底部形成气泡来抑制蚀刻剂和填充材料之间的反应。气泡可以通过反转衬底并将反转的衬底浸入蚀刻剂中而形成。

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