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1. 发明授权

US08830874B2 Method and apparatus for load balancing in cellular communication system 有权
标题翻译：蜂窝通信系统负载均衡的方法和装置
公开(公告)号：US08830874B2
公开(公告)日：2014-09-09
申请号：US13557600
申请日：2012-07-25
申请人： Young-Kyu Cho , Ki-Back Kim , Jin-Hyun Youn
发明人： Young-Kyu Cho , Ki-Back Kim , Jin-Hyun Youn
IPC分类号： H04L12/28 , H04W36/22 , H04L12/56 , H04W28/08
CPC分类号： H04W28/08 , H04L47/125 , H04W36/22
摘要： A method and an apparatus for load balancing a serving subcell providing a data service to one or more user equipments in a cellular communication system are provided. The method includes calculating a load metric by using a radio resource occupation rate of data traffic in one or more scheduling types except for a Best Effort (BE) scheduling type, determining whether the serving subcell is in an overload state by using the load metric, and triggering a load balancing algorithm when it is determined that the serving subcell is in the overload state. Accordingly, the load metric used for load balancing may be defined to have a value closer to an actual free load, and thus the load balancing may be efficiently performed.
摘要翻译：提供了一种用于将蜂窝通信系统中的一个或多个用户设备提供数据服务的服务子小区负载平衡的方法和装置。该方法包括：通过使用除了最佳努力（BE）调度类型之外的一种或多种调度类型中的数据业务的无线电资源占用率来计算负载度量，通过使用负载度量确定服务子小区是否处于过载状态，并且当确定服务子小区处于过载状态时触发负载平衡算法。因此，用于负载平衡的负载度量可以被定义为具有更接近实际空闲负载的值，因此可以有效地执行负载平衡。

2. 发明申请

US20110079879A1 Semiconductor Devices Including Capacitor Support Pads 有权
标题翻译：包括电容器支持垫的半导体器件
公开(公告)号：US20110079879A1
公开(公告)日：2011-04-07
申请号：US12966191
申请日：2010-12-13
申请人： Young-kyu Cho , Ki-vin Im , Yong-hee Choi
发明人： Young-kyu Cho , Ki-vin Im , Yong-hee Choi
IPC分类号： H01L21/02
CPC分类号： H01L28/40 , H01L27/0207 , H01L27/10852 , H01L28/91
摘要： A semiconductor device may include a semiconductor substrate and a plurality of first capacitor electrodes arranged in a plurality of parallel lines on the semiconductor substrate with each of the first capacitor electrodes extending away from the semiconductor substrate. A plurality of capacitor support pads may be provided with each capacitor support pad being connected to first capacitor electrodes of at least two adjacent parallel lines of the first capacitor electrodes and with adjacent capacitor support pads being spaced apart. A dielectric layer may be provided on each of the first capacitor electrodes, and a second capacitor electrode may be provided on the dielectric layer so that the dielectric layer is between the second capacitor electrode and each of the first capacitor electrodes. Related methods are also discussed.
摘要翻译：半导体器件可以包括半导体衬底和布置在半导体衬底上的多条平行线中的多个第一电容器电极，其中每个第一电容器电极远离半导体衬底延伸。可以设置多个电容器支撑焊盘，每个电容器支撑焊盘连接到第一电容器电极的至少两个相邻平行线的第一电容器电极，并且相邻的电容器支撑垫间隔开。可以在每个第一电容器电极上设置电介质层，并且可以在电介质层上设置第二电容器电极，使得电介质层位于第二电容器电极和第一电容器电极之间。还讨论了相关方法。

3. 发明申请

US20080186648A1 METHODS OF FABRICATING INTEGRATED CIRCUIT DEVICES INCLUDING CAPACITORS HAVING HIGH-ASPECT RATIO SUPPORT PATTERNS AND RELATED DEVICES 失效
标题翻译：制造集成电路设备的方法，包括具有高比例支持模式的电容器及相关设备
公开(公告)号：US20080186648A1
公开(公告)日：2008-08-07
申请号：US12021929
申请日：2008-01-29
申请人： Yong-Hee Choi , Young-Kyu Cho , Sung-II Cho , Seok-Hyun Lim
发明人： Yong-Hee Choi , Young-Kyu Cho , Sung-II Cho , Seok-Hyun Lim
IPC分类号： H01G4/008 , H01G7/00
CPC分类号： H01G4/005 , H01G4/33 , H01L27/0203 , H01L27/10852 , H01L28/90 , Y10T29/435
摘要： A method of fabricating an integrated circuit device includes forming a plurality of lower capacitor electrodes vertically extending from a substrate. The plurality of lower capacitor electrodes respectively include an inner sidewall and an outer sidewall. At least one support pattern is formed vertically extending between ones of the plurality of lower capacitor electrodes from top portions thereof opposite the substrate and along the outer sidewalls thereof towards the substrate to a depth that is greater than a lateral distance between adjacent ones of the plurality of lower capacitor electrodes. A dielectric layer is formed on the support pattern and on outer sidewalls of the plurality of lower capacitor electrodes, and an upper capacitor electrode is formed on the dielectric layer. Related devices are also discussed.
摘要翻译：一种制造集成电路器件的方法包括形成从衬底垂直延伸的多个下电容器电极。多个下电容电极分别包括内侧壁和外侧壁。至少一个支撑图案形成为从多个下部电容器电极中的多个下部电容器电极的顶部与衬底相对并且沿着其外侧壁朝向衬底形成垂直延伸的深度，该深度大于多个下部电容器电极中的相邻电极电极之间的横向距离的下电容器电极。在支撑图案和多个下电容器电极的外侧壁上形成介电层，在电介质层上形成上电容电极。还讨论了相关设备。

4. 发明授权

US08941164B2 Semiconductor devices including capacitor support pads 有权
标题翻译：半导体器件包括电容器支撑垫
公开(公告)号：US08941164B2
公开(公告)日：2015-01-27
申请号：US13846356
申请日：2013-03-18
申请人： Young-kyu Cho , Ki-vin Im , Yong-hee Choi
发明人： Young-kyu Cho , Ki-vin Im , Yong-hee Choi
IPC分类号： H01L27/108 , H01L49/02 , H01L27/02
CPC分类号： H01L28/40 , H01L27/0207 , H01L27/10852 , H01L28/91
摘要： A semiconductor device may include a semiconductor substrate and a plurality of first capacitor electrodes arranged in a plurality of parallel lines on the semiconductor substrate with each of the first capacitor electrodes extending away from the semiconductor substrate. A plurality of capacitor support pads may be provided with each capacitor support pad being connected to first capacitor electrodes of at least two adjacent parallel lines of the first capacitor electrodes and with adjacent capacitor support pads being spaced apart. A dielectric layer may be provided on each of the first capacitor electrodes, and a second capacitor electrode may be provided on the dielectric layer so that the dielectric layer is between the second capacitor electrode and each of the first capacitor electrodes. Related methods are also discussed.
摘要翻译：半导体器件可以包括半导体衬底和布置在半导体衬底上的多条平行线中的多个第一电容器电极，其中每个第一电容器电极远离半导体衬底延伸。可以设置多个电容器支撑焊盘，每个电容器支撑焊盘连接到第一电容器电极的至少两个相邻平行线的第一电容器电极，并且相邻的电容器支撑垫间隔开。可以在每个第一电容器电极上设置电介质层，并且可以在电介质层上设置第二电容器电极，使得电介质层位于第二电容器电极和第一电容器电极之间。还讨论了相关方法。

5. 发明申请

US20130292796A1 SEMICONDUCTOR DEVICES INCLUDING CAPACITOR SUPPORT PADS 审中-公开
标题翻译：包括电容器支撑垫的半导体器件
公开(公告)号：US20130292796A1
公开(公告)日：2013-11-07
申请号：US13846356
申请日：2013-03-18
申请人： Young-kyu Cho , Ki-vin Im , Yong-hee Choi
发明人： Young-kyu Cho , Ki-vin Im , Yong-hee Choi
IPC分类号： H01L49/02
CPC分类号： H01L28/40 , H01L27/0207 , H01L27/10852 , H01L28/91
摘要： A semiconductor device may include a semiconductor substrate and a plurality of first capacitor electrodes arranged in a plurality of parallel lines on the semiconductor substrate with each of the first capacitor electrodes extending away from the semiconductor substrate. A plurality of capacitor support pads may be provided with each capacitor support pad being connected to first capacitor electrodes of at least two adjacent parallel lines of the first capacitor electrodes and with adjacent capacitor support pads being spaced apart. A dielectric layer may be provided on each of the first capacitor electrodes, and a second capacitor electrode may be provided on the dielectric layer so that the dielectric layer is between the second capacitor electrode and each of the first capacitor electrodes. Related methods are also discussed.
摘要翻译：半导体器件可以包括半导体衬底和布置在半导体衬底上的多条平行线中的多个第一电容器电极，其中每个第一电容器电极远离半导体衬底延伸。可以设置多个电容器支撑焊盘，每个电容器支撑焊盘连接到第一电容器电极的至少两个相邻平行线的第一电容器电极，并且相邻的电容器支撑垫间隔开。可以在每个第一电容器电极上设置电介质层，并且可以在电介质层上设置第二电容器电极，使得电介质层位于第二电容器电极和第一电容器电极之间。还讨论了相关方法。

6. 发明申请

US20130028093A1 METHOD AND APPARATUS FOR LOAD BALANCING IN CELLULAR COMMUNICATION SYSTEM 有权
标题翻译：细胞通信系统负载平衡的方法与装置
公开(公告)号：US20130028093A1
公开(公告)日：2013-01-31
申请号：US13557600
申请日：2012-07-25
申请人： Young-Kyu CHO , Ki-Back KIM , Jin-Hyun YOUN
发明人： Young-Kyu CHO , Ki-Back KIM , Jin-Hyun YOUN
IPC分类号： H04W28/08 , H04W28/12 , H04W36/22
CPC分类号： H04W28/08 , H04L47/125 , H04W36/22
摘要： A method and an apparatus for load balancing a serving subcell providing a data service to one or more user equipments in a cellular communication system are provided. The method includes calculating a load metric by using a radio resource occupation rate of data traffic in one or more scheduling types except for a Best Effort (BE) scheduling type, determining whether the serving subcell is in an overload state by using the load metric, and triggering a load balancing algorithm when it is determined that the serving subcell is in the overload state. Accordingly, the load metric used for load balancing may be defined to have a value closer to an actual free load, and thus the load balancing may be efficiently performed.
摘要翻译：提供了一种用于将蜂窝通信系统中的一个或多个用户设备提供数据服务的服务子小区负载平衡的方法和装置。该方法包括：通过使用除了最佳努力（BE）调度类型之外的一种或多种调度类型中的数据业务的无线电资源占用率来计算负载度量，通过使用负载度量确定服务子小区是否处于过载状态，并且当确定服务子小区处于过载状态时触发负载平衡算法。因此，用于负载平衡的负载度量可以被定义为具有更接近实际空闲负载的值，因此可以有效地执行负载平衡。

7. 发明申请

US20120138139A1 DRY ETCHING METHOD OF SURFACE TEXTURE FORMATION ON SILICON WAFER 审中-公开
标题翻译：硅胶表面纹理形成干蚀刻方法
公开(公告)号：US20120138139A1
公开(公告)日：2012-06-07
申请号：US13287049
申请日：2011-11-01
申请人： Young Kyu CHO
发明人： Young Kyu CHO
IPC分类号： H01L31/0236 , H01L21/306 , H01L21/302
CPC分类号： H01L31/02363 , Y02E10/50
摘要： Systems and methods for improving surface reflectance of silicon wafers are disclosed. The systems and methods improve surface reflectance by forming a textured surface on the silicon wafer by performing surface oxidation and dry etching processes. The surface oxidation maybe performed using a dry oxygen plasma process. A dry etch process is performed to remove the oxide layer formed by the surface oxidation step and etch the Silicon layer with oxide masking. Dry etching enables black silicon formation, which minimizes or eliminates light reflection or scattering, eventually leading to higher energy conversion efficiency.
摘要翻译：公开了用于改善硅晶片的表面反射率的系统和方法。该系统和方法通过进行表面氧化和干蚀刻工艺在硅晶片上形成纹理表面来提高表面反射率。表面氧化可以使用干氧等离子体工艺进行。执行干蚀刻工艺以除去由表面氧化步骤形成的氧化物层，并用氧化物掩模蚀刻硅层。干式蚀刻使得黑色硅形成能够最小化或消除光反射或散射，最终导致更高的能量转换效率。

8. 发明授权

US08159902B2 Apparatus and method for localizing sound source in robot 有权
标题翻译：机器人声源定位装置及方法
公开(公告)号：US08159902B2
公开(公告)日：2012-04-17
申请号：US12436434
申请日：2009-05-06
申请人： Hyun-Soo Kim , Dong-Suk Yook , Young-Kyu Cho , Woo-Jin Choi
发明人： Hyun-Soo Kim , Dong-Suk Yook , Young-Kyu Cho , Woo-Jin Choi
IPC分类号： H04R3/00
CPC分类号： H04R3/005 , H04R2430/21
摘要： An apparatus and method for localizing a sound source in a robot are provided. The apparatus includes a microphone unit implemented by one or more microphones, which picks up a sound from a three-dimensional space. The apparatus also includes a sound source localizer for determining a position of the sound source in accordance with Time-Difference of Arrivals (TDOAs) and a highest power of the sound picked up by the microphone unit. Thus, the robot can rapidly and accurately localize the sound source in the three-dimensional space with minimum dead space, using a minimum number of microphones.
摘要翻译：提供了一种用于在机器人中定位声源的装置和方法。该装置包括由一个或多个麦克风实现的麦克风单元，其从三维空间拾取声音。该装置还包括声源定位器，用于根据到达时差（TDOA）和由麦克风单元拾取的声音的最高功率来确定声源的位置。因此，使用最小数量的麦克风，机器人可以以最小的死空间快速准确地定位三维空间中的声源。

9. 发明授权

US07869189B2 Methods of fabricating integrated circuit devices including capacitors having high-aspect ratio support patterns and related devices 失效
标题翻译：制造集成电路器件的方法，包括具有高纵横比支持图案和相关器件的电容器
公开(公告)号：US07869189B2
公开(公告)日：2011-01-11
申请号：US12021929
申请日：2008-01-29
申请人： Yong-Hee Choi , Young-Kyu Cho , Sung-Il Cho , Seok-Hyun Lim
发明人： Yong-Hee Choi , Young-Kyu Cho , Sung-Il Cho , Seok-Hyun Lim
IPC分类号： H01G4/228
CPC分类号： H01G4/005 , H01G4/33 , H01L27/0203 , H01L27/10852 , H01L28/90 , Y10T29/435
摘要： A method of fabricating an integrated circuit device includes forming a plurality of lower capacitor electrodes vertically extending from a substrate. The plurality of lower capacitor electrodes respectively include an inner sidewall and an outer sidewall. At least one support pattern is formed vertically extending between ones of the plurality of lower capacitor electrodes from top portions thereof opposite the substrate and along the outer sidewalls thereof towards the substrate to a depth that is greater than a lateral distance between adjacent ones of the plurality of lower capacitor electrodes. A dielectric layer is formed on the support pattern and on outer sidewalls of the plurality of lower capacitor electrodes, and an upper capacitor electrode is formed on the dielectric layer. Related devices are also discussed.
摘要翻译：一种制造集成电路器件的方法包括形成从衬底垂直延伸的多个下电容器电极。多个下电容电极分别包括内侧壁和外侧壁。至少一个支撑图案形成为从多个下部电容器电极中的多个下部电容器电极的顶部与衬底相对并且沿着其外侧壁朝向衬底形成垂直延伸的深度，该深度大于多个下部电容器电极中的相邻电极电极之间的横向距离的下电容器电极。在支撑图案和多个下电容器电极的外侧壁上形成介电层，在电介质层上形成上电容电极。还讨论了相关设备。

10. 发明申请

US20090279714A1 APPARATUS AND METHOD FOR LOCALIZING SOUND SOURCE IN ROBOT 有权
标题翻译：用于在机器人中定位声源的装置和方法
公开(公告)号：US20090279714A1
公开(公告)日：2009-11-12
申请号：US12436434
申请日：2009-05-06
申请人： Hyun-Soo KIM , Song-Suk Yook , Young-Kyu Cho , Woo-Jin Choi
发明人： Hyun-Soo KIM , Song-Suk Yook , Young-Kyu Cho , Woo-Jin Choi
IPC分类号： H04R3/00
CPC分类号： H04R3/005 , H04R2430/21
摘要： An apparatus and method for localizing a sound source in a robot are provided. The apparatus includes a microphone unit implemented by one or more microphones, which picks up a sound from a three-dimensional space. The apparatus also includes a sound source localizer for determining a position of the sound source in accordance with Time-Difference of Arrivals (TDOAs) and a highest power of the sound picked up by the microphone unit. Thus, the robot can rapidly and accurately localize the sound source in the three-dimensional space with minimum dead space, using a minimum number of microphones.
摘要翻译：提供了一种用于在机器人中定位声源的装置和方法。该装置包括由一个或多个麦克风实现的麦克风单元，其从三维空间拾取声音。该装置还包括声源定位器，用于根据到达时差（TDOA）和由麦克风单元拾取的声音的最高功率来确定声源的位置。因此，使用最小数量的麦克风，机器人可以以最小的死空间快速准确地定位三维空间中的声源。

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