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1. 发明申请

US20110024399A1 PLASMA PROCESSING APPARATUS AND METHOD FOR PLASMA PROCESSING 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20110024399A1
公开(公告)日：2011-02-03
申请号：US12936671
申请日：2009-04-06
申请人： Hyoung Won Kim , Young Soo Seo , Chi Kug Yoon , Jun Hyeok Lee , Young Ki Han , Jae Chul Choi
发明人： Hyoung Won Kim , Young Soo Seo , Chi Kug Yoon , Jun Hyeok Lee , Young Ki Han , Jae Chul Choi
IPC分类号： B23K10/00
CPC分类号： H01J37/32568 , H01J37/32009 , H01J2237/334 , H01L21/67069 , H01L21/67751 , H01L21/68742
摘要： Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.
摘要翻译：提供了一种等离子体处理装置和方法。等离子体处理装置包括室，上电极，下电极，基板支撑件和移动构件。上电极设置在室的内部上部。下电极在室的内下部面对上电极以支撑衬底，使得衬底的斜面在衬底级蚀刻工艺中暴露。衬底支撑件设置在上电极和下电极之间以支撑衬底，使得衬底的底表面的中心区域在衬底背面蚀刻工艺中暴露。移动构件被构造成移动衬底支撑件以在衬底背面蚀刻工艺中将衬底与衬底支撑件分离。

2. 发明申请

US20080218080A1 Plasma display panel 审中-公开
标题翻译：等离子显示面板
公开(公告)号：US20080218080A1
公开(公告)日：2008-09-11
申请号：US11901026
申请日：2007-09-14
申请人： Jung-Suk Song , Ki-Dong Kim , Sang-Hyun Kim , Bo-Won Lee , Seong-Hun Choo , Joon-Hyeong Kim , Young-Soo Seo
发明人： Jung-Suk Song , Ki-Dong Kim , Sang-Hyun Kim , Bo-Won Lee , Seong-Hun Choo , Joon-Hyeong Kim , Young-Soo Seo
IPC分类号： H01J17/49
CPC分类号： H01J11/12 , H01J11/34
摘要： Provided is a plasma display panel including: a first substrate and a second substrate facing each other; an upper dielectric layer formed on the inner surface of the first substrate; and a first ceramic layer which has about the same thermal expansion coefficient as the upper dielectric layer, faces the upper dielectric layer, and is formed on the outer surface of the first substrate. Alternatively, the plasma display panel includes: a first lower dielectric layer formed on the second substrate and having a thermal expansion coefficient greater than that of the second substrate by α; and a second lower dielectric layer formed on the first lower dielectric layer and having a thermal expansion coefficient less than that of the second substrate by α.
摘要翻译：提供一种等离子体显示面板，其包括：第一基板和第二基板，彼此面对; 形成在所述第一基板的内表面上的上电介质层; 并且具有与上部电介质层大致相同的热膨胀系数的第一陶瓷层面向上部电介质层，并且形成在第一基板的外表面上。或者，等离子体显示面板包括：形成在第二基板上并且具有比第二基板的热膨胀系数大的热膨胀系数的第一下介电层; 以及第二下介电层，其形成在所述第一下电介质层上，并且具有比所述第二基板的热膨胀系数小的热膨胀系数。

3. 发明申请

US20080186419A1 PLASMA DISPLAY DEVICE 审中-公开
标题翻译：等离子体显示设备
公开(公告)号：US20080186419A1
公开(公告)日：2008-08-07
申请号：US11836049
申请日：2007-08-08
申请人： Dong Hyun Kim , Young Soo Seo , Jung Suk Song , Jun Tae Kim , Jeong Min Choi
发明人： Dong Hyun Kim , Young Soo Seo , Jung Suk Song , Jun Tae Kim , Jeong Min Choi
IPC分类号： G02F1/133 , H01J9/00
CPC分类号： H05K7/20963
摘要： A plasma display device is provided having a plasma display panel, a chassis base arranged substantially parallel to the plasma display panel, a tape bonding the plasma display panel to the chassis base, and a radiative sheet interposed between and adhering to the plasma display panel and the chassis base. The radiative sheet is of material having a layered crystal structure. The layered crystal structure is arranged to extend at an angle from the plasma display panel. The angle is not horizontal/parallel to a surface of the plasma display panel.
摘要翻译：提供了一种等离子体显示装置，其具有等离子体显示面板，基本上平行于等离子体显示面板布置的底座基座，将等离子体显示面板粘合到底架上的带子，以及插入在等离子体显示面板之间并粘附到等离子体显示面板上的辐射片底盘。辐射片是具有层状晶体结构的材料。层状晶体结构被布置成从等离子体显示面板以一定角度延伸。该角度不是水平/平行于等离子体显示面板的表面。

4. 发明授权

US07054317B1 Method for controlling transmission control protocol window size in asynchronous transfer mode network 有权
标题翻译：用于在异步传输模式网络中控制传输控制协议窗口大小的方法
公开(公告)号：US07054317B1
公开(公告)日：2006-05-30
申请号：US09439206
申请日：1999-11-12
申请人： Jae Il Jung , Sung Won Kang , Young Soo Seo
发明人： Jae Il Jung , Sung Won Kang , Young Soo Seo
IPC分类号： H04L12/56
CPC分类号： H04L47/10 , H04L47/193 , H04L47/20 , H04L47/263 , H04L47/27 , H04L2012/5635
摘要： The present invention relates to a method for controlling a transmission control protocol window size in an asynchronous transfer mode which determines a TCP congestion window size by using an explicit rate value in a resource management cell. According to the present invention, cells transmitted pursuant to the explicit rate value are rarely dropped or tagged by a switch algorithm, thereby reducing a ratio of transmission.
摘要翻译：本发明涉及一种用于在异步传送模式中控制传输控制协议窗口大小的方法，该方法通过在资源管理小区中使用显式速率值来确定TCP拥塞窗口大小。根据本发明，根据显式速率值发送的小区很少被切换算法丢弃或标记，从而减少了传输比。

5. 发明授权

US06872115B2 Blade with comb teeth coated with a compound layer for forming ribs and its production method 失效
标题翻译：带梳齿的刀片涂有复合层，用于形成肋条及其制造方法
公开(公告)号：US06872115B2
公开(公告)日：2005-03-29
申请号：US10252361
申请日：2002-09-24
申请人： Hideaki Sakurai , Kunio Sugamura , Yoshio Kanda , Ryuji Uesugi , Yoshirou Kuromitsu , Young Cheul Kang , Eun Gi Heo , Young Soo Seo , Seung Jae Chung , Joon Min Kim , Hyun Sub Lee
发明人： Hideaki Sakurai , Kunio Sugamura , Yoshio Kanda , Ryuji Uesugi , Yoshirou Kuromitsu , Young Cheul Kang , Eun Gi Heo , Young Soo Seo , Seung Jae Chung , Joon Min Kim , Hyun Sub Lee
IPC分类号： H01J9/02 , B29C59/02 , H01J9/24 , H01J11/22 , H01J11/34 , H01J11/36 , H01J9/06
CPC分类号： H01J9/242 , B29C59/026 , B29C2059/027 , B29K2995/0087 , H01J2211/36
摘要： One object of the present invention is to provide a blade for forming ribs that is able to improve wear resistance; in order to achieve the object, the present invention provide a blade for forming ribs that forms ribs either on the surface of a substrate or via an undercoating layer on the surface of a substrate by moving a blade body in a fixed direction relative to a paste film in the state in which comb teeth formed on at least a portion of the periphery of said blade body are penetrated into said paste film formed on the surface of said substrate to plasticly deform said paste film; wherein, the surface of said comb teeth formed on said blade body that makes contact with said paste film is coated with a compound layer in which hard particles are dispersed in a metal.
摘要翻译：本发明的一个目的是提供一种用于形成能够改善耐磨性的肋的刀片; 为了实现该目的，本发明提供了一种用于形成肋的刀片，所述刀片在衬底的表面上或通过基板表面上的底涂层形成肋，所述刀片相对于糊料沿固定方向移动刀片体在形成在所述刀片主体的周边的至少一部分上的梳齿穿入所述基板的表面上形成的所述膏膜的状态下，使所述膏膜塑性变形的膜; 其特征在于，形成在所述刀片体上与所述糊状物膜接触的所述梳齿的表面涂覆有硬质粒子分散在金属中的化合物层。

6. 发明授权

US08864936B2 Apparatus and method for processing substrate 有权
标题翻译：基板处理装置及方法
公开(公告)号：US08864936B2
公开(公告)日：2014-10-21
申请号：US12810915
申请日：2008-12-10
申请人： Young Ki Han , Young Soo Seo
发明人： Young Ki Han , Young Soo Seo
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00 , H01J37/20 , H01J37/32
CPC分类号： H01J37/20 , H01J37/3244 , H01J37/32449 , H01J2237/2002 , H01J2237/20235
摘要： There are provided an apparatus and method for processing a substrate. By using the apparatus and method, plasma processing can be individually performed on each of edge and rear regions of a substrate in a single chamber. The apparatus includes a chamber providing a reaction space; a stage installed in the chamber; a plasma shielding unit installed opposite to the stage in the chamber; a support unit for supporting a substrate between the stage and the plasma shielding unit; a first supply pipe provided at the stage to supply a reaction or non-reaction gas to one surface of the substrate; and second and third supply pipes provided at the plasma shielding unit, the second supply pipe supplying a reaction gas to the other surface of the substrate, the third supply pipe supplying a non-reaction gas to the other surface.
摘要翻译：提供了一种用于处理基板的装置和方法。通过使用该装置和方法，可以在单个室中对基板的边缘区域和后部区域各自进行等离子体处理。该装置包括提供反应空间的室; 安装在室内的舞台; 等离子体屏蔽单元，其安装在所述室中与所述台相对; 支撑单元，用于在所述载物台和所述等离子体屏蔽单元之间支撑基板; 设置在所述阶段以将反应或非反应气体供应到所述基板的一个表面的第一供给管; 以及设置在所述等离子体屏蔽单元处的第二和第三供应管，所述第二供应管向所述基板的另一表面供应反应气体，所述第三供应管向另一表面供应非反应气体。

7. 发明申请

US20130153263A1 INORGANIC NANOFILLER, PARTIAL DISCHARGE RESISTANT ENAMELED WIRE INCLUDING THE SAME, AND PREPARING METHOD OF THE ENAMELED WIRE 有权
标题翻译：无机纳米复合材料，包括其中的部分放电电阻丝及其制备方法
公开(公告)号：US20130153263A1
公开(公告)日：2013-06-20
申请号：US13530237
申请日：2012-06-22
申请人： Young-Soo SEO , Yongbeom KIM
发明人： Young-Soo SEO , Yongbeom KIM
IPC分类号： C07F7/18 , H01B13/06 , C07F19/00 , H01B3/42 , C08K5/544 , C09D5/25
CPC分类号： H01B3/308 , C08K5/54 , C08K9/06 , C08K2201/014 , C09D7/66 , C09D7/67
摘要： The present disclosure relates to a silane-containing inorganic nanofiller, a varnish including the silane-containing inorganic nanofiller, an enameled wire including the silane-containing inorganic nanofiller, and a method for preparing the enameled wire.
摘要翻译：本发明涉及含硅烷的无机纳米填料，包含含硅烷的无机纳米填料的清漆，包含含硅烷的无机纳米填料的漆包线，以及制备漆包线的方法。

8. 发明授权

US08373086B2 Plasma processing apparatus and method for plasma processing 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08373086B2
公开(公告)日：2013-02-12
申请号：US12936671
申请日：2009-04-06
申请人： Hyoung Won Kim , Young Soo Seo , Chi Kug Yoon , Jun Hyeok Lee , Young Ki Han , Jae Chul Choi
发明人： Hyoung Won Kim , Young Soo Seo , Chi Kug Yoon , Jun Hyeok Lee , Young Ki Han , Jae Chul Choi
IPC分类号： B23K10/00
CPC分类号： H01J37/32568 , H01J37/32009 , H01J2237/334 , H01L21/67069 , H01L21/67751 , H01L21/68742
摘要： Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.
摘要翻译：提供了一种等离子体处理装置和方法。等离子体处理装置包括室，上电极，下电极，基板支撑件和移动构件。上电极设置在室的内部上部。下电极在室的内下部面对上电极以支撑衬底，使得衬底的斜面在衬底级蚀刻工艺中暴露。衬底支撑件设置在上电极和下电极之间以支撑衬底，使得衬底的底表面的中心区域在衬底背面蚀刻工艺中暴露。移动构件被构造成移动衬底支撑件以在衬底背面蚀刻工艺中将衬底与衬底支撑件分离。

9. 发明申请

US20110084604A1 PLASMA DISPLAY PANEL 失效
标题翻译：等离子显示面板
公开(公告)号：US20110084604A1
公开(公告)日：2011-04-14
申请号：US12902076
申请日：2010-10-11
申请人： Soon-Dong Jeong , Jae-Huy Park , Kyoung-Sik Jeon , Sun-Sik Kong , Bon-Joo Koo , Jung-Min Kim , Young-Soo Seo , Hyoung-Bin Park , Yu-Il Jang , Sung-Mun Ryu , Chong-In Chung , Sang-Hyuck Ahn , Jung-Sup Kwak
发明人： Soon-Dong Jeong , Jae-Huy Park , Kyoung-Sik Jeon , Sun-Sik Kong , Bon-Joo Koo , Jung-Min Kim , Young-Soo Seo , Hyoung-Bin Park , Yu-Il Jang , Sung-Mun Ryu , Chong-In Chung , Sang-Hyuck Ahn , Jung-Sup Kwak
IPC分类号： H01J17/49
CPC分类号： H01J11/12 , H01J11/36 , H01J2211/363 , H01J2211/365
摘要： A plasma display panel (PDP) including: first and second opposing substrates; a discharge layer disposed between the substrates, having discharge cells; address electrodes disposed on the first substrate, extending in a first direction, across the discharge cells; and display electrodes disposed on the second substrate, extending across the discharge cells in a second direction. The discharge layer includes: a discharge enhancement layer disposed on the first substrate, having first spaces; and a barrier rib layer disposed on the discharge enhancement layer, having second spaces that are connected to the first spaces, so as to form the discharge cells. The discharge enhancement layer further includes a perimeter member disposed in a dummy area provided at the edges of an effective area of the PDP.
摘要翻译：一种等离子体显示面板（PDP），包括：第一和第二相对的基板; 设置在所述基板之间的放电层，具有放电单元; 设置在第一基板上的，沿第一方向延伸的寻址电极穿过放电单元; 以及设置在所述第二基板上的显示电极，沿着第二方向延伸穿过所述放电单元。放电层包括：放电增强层，设置在第一基板上，具有第一空间; 以及设置在放电增强层上的阻挡肋层，具有连接到第一空间的第二空间，以形成放电单元。放电增强层还包括设置在设置在PDP的有效区域的边缘处的虚拟区域中的周边部件。

10. 发明申请

US20110049100A1 SUBSTRATE HOLDER, SUBSTRATE SUPPORTING APPARATUS, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD USING THE SAME 审中-公开
标题翻译：基板保持器，基板支撑装置，基板处理装置和使用该基板的基板处理方法
公开(公告)号：US20110049100A1
公开(公告)日：2011-03-03
申请号：US12863388
申请日：2009-01-15
申请人： Young Ki Han , Young Soo Seo , Hyoung Won Kim , Chi Kug Yoon , Sang Hoon Lee
发明人： Young Ki Han , Young Soo Seo , Hyoung Won Kim , Chi Kug Yoon , Sang Hoon Lee
IPC分类号： C23F1/08 , C23F1/04 , C23F1/00
CPC分类号： H01J37/32715 , H01J37/3244 , H01J37/32568 , H01J37/32623 , H01J37/32642 , H01J2237/3343 , H01L21/67069 , H01L21/68721 , H01L21/68728 , H01L21/68785
摘要： Provided are a substrate holder, a substrate supporting apparatus, a substrate processing apparatus, and a substrate processing method. Particularly, there are provided a substrate holder, a substrate supporting apparatus, a substrate processing apparatus, and a substrate processing method that are adapted to improve process efficiency and etch uniformity at the back surface of a substrate.
摘要翻译：提供了基板保持器，基板支撑装置，基板处理装置和基板处理方法。特别地，提供了适于提高基板背面的工艺效率和蚀刻均匀性的基板保持器，基板支撑装置，基板处理装置和基板处理方法。

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