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1. 发明授权

US06652762B2 Method for fabricating nano-sized diamond whisker, and nano-sized diamond whisker fabricated thereby 失效
标题翻译：制造纳米级金刚石晶须的方法，以及由此制造的纳米级金刚石晶须
公开(公告)号：US06652762B2
公开(公告)日：2003-11-25
申请号：US09412536
申请日：1999-10-05
申请人： Young Joon Baik , Eun Song Baik , Dong Ryul Jeon
发明人： Young Joon Baik , Eun Song Baik , Dong Ryul Jeon
IPC分类号： C03C1500
CPC分类号： H01J9/025 , C01B33/06 , C30B25/00 , C30B25/005 , C30B29/04 , C30B29/605 , H01J2201/30457
摘要： A method for fabricating a nano-sized diamond whisker includes the steps of depositing a diamond film on a substrate, forming a nano-sized mask pattern on the deposited diamond film, and etching the diamond film by using the nano-sized pattern as an etching mask. The nano-sized diamond whisker can be used as a new field emission cold cathode device, thereby advancing a practical use of a field emission device having high performance, and can also be applied to various fields such as a new composite material and a mechanical device.
摘要翻译：制造纳米尺寸金刚石晶须的方法包括以下步骤：在基底上沉积金刚石膜，在沉积的金刚石膜上形成纳米尺寸的掩模图案，并通过使用纳米尺寸图案作为蚀刻来蚀刻金刚石膜面具。纳米尺寸的金刚石晶须可以用作新的场致发射冷阴极器件，从而推进了具有高性能的场致发射器件的实际应用，并且还可以应用于各种领域，例如新的复合材料和机械装置。

2. 发明授权

US08247031B2 Method for growing thin film 有权
标题翻译：生长薄膜的方法
公开(公告)号：US08247031B2
公开(公告)日：2012-08-21
申请号：US12417231
申请日：2009-04-02
申请人： Young Joon Baik , Won Mok Kim , Kyeong Seok Lee , Jong-Keuk Park , Jeung-hyun Jeong , Suyoun Lee , Taek Sung Lee
发明人： Young Joon Baik , Won Mok Kim , Kyeong Seok Lee , Jong-Keuk Park , Jeung-hyun Jeong , Suyoun Lee , Taek Sung Lee
IPC分类号： C23C16/00 , B05D1/36
CPC分类号： C30B29/16 , C23C16/407 , C30B25/02 , C30B28/12
摘要： Disclosed is a method for growing a thin film, which includes modifying a surface grain size and surface roughness on a thin film to improve the mobility of a carrier and a light scattering effect. The method for growing a thin film includes: forming nuclei of grains having various grain orientations on a substrate; causing first grains having a first specific grain orientation to grow predominantly among the grains having various grain orientations, thereby forming a first preferred texture comprised of the predominantly grown first grains; and then causing second grains having a second grain orientation to grow predominantly, thereby forming a second preferred texture comprised of the predominantly grown second grains, wherein the surface grain size of each of the second grains forming the second texture is larger than that of each of the first grains forming the first texture.
摘要翻译：公开了一种用于生长薄膜的方法，其包括改变薄膜上的表面粒径和表面粗糙度以提高载体的迁移率和光散射效应。生长薄膜的方法包括：在基板上形成具有各种晶粒取向的晶粒的核; 使得具有第一特定晶粒取向的第一晶粒主要在具有各种晶粒取向的晶粒中生长，由此形成由主要生长的第一晶粒组成的第一优选纹理; 然后使具有第二晶粒取向的第二晶粒主要生长，从而形成由主要生长的第二晶粒组成的第二优选纹理，其中形成第二纹理的每个第二晶粒的表面粒径大于第一颗粒形成第一纹理。

3. 发明授权

US08154058B2 Bio-sensor and method of manufacturing the same 有权
标题翻译：生物传感器及其制造方法
公开(公告)号：US08154058B2
公开(公告)日：2012-04-10
申请号：US12589622
申请日：2008-10-23
申请人： Gyu Weon Hwang , Wook Seong Lee , Jeung-hyun Jeong , Jong-Keuk Park , Young Joon Baik
发明人： Gyu Weon Hwang , Wook Seong Lee , Jeung-hyun Jeong , Jong-Keuk Park , Young Joon Baik
IPC分类号： H01L23/58 , H01L27/14
CPC分类号： G01N27/4145 , H01L2924/0002 , H01L2924/00
摘要： A bio-sensor includes a gate dielectric formed on a silicon semiconductor substrate, a gate electrode of a conductive diamond film formed on the gate dielectric, probe molecules bonded on the gate electrode for detecting biomolecules, and source/drain regions formed on the semiconductor substrate at the sides of the gate electrode. The gate electrode is a comb shape or a lattice shape.
摘要翻译：生物传感器包括形成在硅半导体衬底上的栅电介质，形成在栅电介质上的导电金刚石膜的栅电极，键合在用于检测生物分子的栅电极上的探针分子，以及形成在半导体衬底上的源/漏区在栅电极的侧面。栅电极是梳形或格子形状。

4. 发明授权

US08034411B2 Method of preventing abnormal large grains from being included into thin nano-crystalline diamond film 有权
标题翻译：防止异常大颗粒纳入薄纳米晶金刚石薄膜的方法
公开(公告)号：US08034411B2
公开(公告)日：2011-10-11
申请号：US11931963
申请日：2007-10-31
申请人： Heqing Li , Wook Seong Lee , Young Joon Baik , Jong-Keuk Park
发明人： Heqing Li , Wook Seong Lee , Young Joon Baik , Jong-Keuk Park
IPC分类号： C23C16/00 , C23C16/26 , C23C16/52
CPC分类号： C23C16/277 , B82Y30/00 , C23C16/271 , C23C16/279
摘要： The present invention relates to a method of preventing abnormal large grains from being included in a NCD thin film during a hot filament CVD process by appropriately controlling the deposition condition regarding a temperature-measuring means, a deposition pressure, an electrical potential and/or the composition of a raw material gas flow.
摘要翻译：本发明涉及通过适当地控制关于温度测量装置，沉积压力，电位和/或电压的沉积条件，防止在热丝CVD过程中异常大晶粒被包含在NCD薄膜中的方法原料气流的组成。

5. 发明申请

US20110223332A1 METHOD FOR DEPOSITING CUBIC BORON NITRIDE THIN FILM 审中-公开
标题翻译：沉积CIBIC BORON NITRIDE THIN FILM的方法
公开(公告)号：US20110223332A1
公开(公告)日：2011-09-15
申请号：US13047405
申请日：2011-03-14
申请人： Young Joon BAIK , Jong Keuk PARK , Wook Seong LEE
发明人： Young Joon BAIK , Jong Keuk PARK , Wook Seong LEE
IPC分类号： C23C16/00 , C23C14/35
CPC分类号： C23C14/0647 , C23C14/067
摘要： The present invention relates to a method for depositing a cBN thin film on a substrate to obtain an abrasive material by physical vapor deposition carried out under an atmosphere composed of an inert gas and hydrogen. The abrasive produced by the inventive method comprises the cBN thin film attached firmly to the substrate, which has excellent hardness and durability.
摘要翻译：本发明涉及一种在基板上沉积cBN薄膜的方法，通过在由惰性气体和氢气组成的气氛下进行物理气相沉积来获得研磨材料。通过本发明方法制造的磨料包括牢固地附着到基底上的cBN薄膜，其具有优异的硬度和耐久性。

6. 发明申请

US20090074986A1 METHOD OF PREVENTING ABNORMAL LARGE GRAINS FROM BEING INCLUDED INTO THIN NANO-CRYSTALLINE DIAMOND FILM 有权
标题翻译：防止异种大颗粒从包括在纳米晶体金刚石薄膜中的方法
公开(公告)号：US20090074986A1
公开(公告)日：2009-03-19
申请号：US11931963
申请日：2007-10-31
申请人： Heqing Li , Wook Seong Lee , Young Joon Baik , Jong-Keuk Park
发明人： Heqing Li , Wook Seong Lee , Young Joon Baik , Jong-Keuk Park
IPC分类号： C23C16/52 , C23C16/50
CPC分类号： C23C16/277 , B82Y30/00 , C23C16/271 , C23C16/279
摘要： The present invention relates to a method of preventing abnormal large grains from being included in a NCD thin film during a hot filament CVD process by appropriately controlling the deposition condition regarding a temperature-measuring means, a deposition pressure, an electrical potential and/or the composition of a raw material gas flow.
摘要翻译：本发明涉及通过适当地控制关于温度测量装置，沉积压力，电位和/或电压的沉积条件，防止在热丝CVD过程中异常大晶粒被包含在NCD薄膜中的方法原料气流的组成。

7. 发明授权

US06399151B2 Diamond film depositing apparatus and method thereof 失效
公开(公告)号：US06399151B2
公开(公告)日：2002-06-04
申请号：US09427897
申请日：1999-10-27
申请人： Wook-Seong Lee , Young Joon Baik , Kwang Yong Eun
发明人： Wook-Seong Lee , Young Joon Baik , Kwang Yong Eun
IPC分类号： C23C1627
CPC分类号： H01J37/32027 , H01J37/32009 , H01J37/32541
摘要： A diamond film depositing apparatus and method are disclosed in which a uniform and large plasma is formed on a substrate having a diameter of larger than 100 mm without using a heated filament cathode, without applying a magnetic field thereto, and without using a ballast resistance. The thusly formed plasma is maintained stably for a long time, so that a diamond thick film having a diameter of larger than 4 inches and a thickness of over hundreds of &mgr;m can be deposited on a flat or curved substrate and also on a Si wafer.

8. 发明授权

US06379568B1 Diamond field emitter and fabrication method thereof 失效
标题翻译：金刚石场发射体及其制造方法
公开(公告)号：US06379568B1
公开(公告)日：2002-04-30
申请号：US09570958
申请日：2000-05-15
申请人： Young-Joon Baik , Joo-Yong Lee , Dong-Ryul Jeon
发明人： Young-Joon Baik , Joo-Yong Lee , Dong-Ryul Jeon
IPC分类号： H01J1900
CPC分类号： H01J9/025 , H01J2201/30457
摘要： A diamond field emitter and a fabrication method thereof, in which a pretreatment is performed on a surface of an Si substrate in order that diamond nuclei are uniformly formed on the Si substrate during a diamond deposition, an oxide film such as an SiO2 film is deposited on the pretreated surface of the Si substrate and removed after an etching process so that diamond powder can be selectively remained during the etching process, thus the effect of the surface pretreatment of the Si substrate remains in the selected portion during the etching process, and it is also possible to uniformly deposit the diamond in said portion. According to the present invention, the diamond field emitter having excellent and uniform field emission characteristic can be manufactured because the field emission is easily achieved at a tip shaped field emission section, and, moreover, the diamond placed on an upper end portion of the tip increases electron emission effect.
摘要翻译：一种金刚石场发射器及其制造方法，其中在金刚石沉积中在Si衬底的表面上进行预处理以使金刚石核均匀地形成在Si衬底上，沉积诸如SiO 2膜的氧化物膜在Si衬底的预处理表面上，并且在蚀刻工艺之后去除，使得在蚀刻工艺期间可以选择性地保留金刚石粉末，因此在蚀刻工艺期间，Si衬底的表面预处理的效果保留在所选择的部分中，并且也可以将金刚石均匀地沉积在所述部分中。根据本发明，可以制造具有优异均匀的场发射特性的金刚石场发射器，因为在尖端形状的场致发射部分容易实现场致发射，此外，金刚石放置在尖端的上端部增加电子发射效应。

9. 发明授权

US06365230B1 Method of manufacturing a diamond film coated cutting tool 有权
标题翻译：金刚石薄膜涂层切割工具的制造方法
公开(公告)号：US06365230B1
公开(公告)日：2002-04-02
申请号：US09459026
申请日：1999-12-10
申请人： Young Joon Baik , Wook-Seong Lee , Kwang Yong Eun , Ki Woong Chae
发明人： Young Joon Baik , Wook-Seong Lee , Kwang Yong Eun , Ki Woong Chae
IPC分类号： C23C1627
CPC分类号： C23C14/044 , C23C16/0209 , C23C16/0254 , C23C16/27 , Y10T428/30
摘要： In order to provide an excellent toughness and a sufficient adhesive force without any limit in the content of other carbides in the substrate material and Co and in the size of the cemented carbides grains, the present invention provides a diamond film coated cutting tool, comprising a surface layer which cemented carbide grains are grown abnormally on the cemented carbide substrate, and a diamond film formed on the surface layer, and also a method for manufacturing a diamond film coated cutting tool, comprising the steps of heat-treating a surface of a cemented carbide substrate under a decarburizing atmosphere until the surface changes to a &eegr; phase, heat-treating the surface-decarburized cemented carbide substrate under a carburized atmosphere, depositing a diamond film on the carburized surface of the cemented carbide substrate.
摘要翻译：为了提供优异的韧性和足够的粘合力，对基材和Co中的其它碳化物的含量和硬质合金颗粒的尺寸没有任何限制，本发明提供了一种金刚石薄膜涂覆的切削工具，其包括在硬质合金基体上形成硬质合金颗粒的表面层异常生长，在表面层上形成的金刚石膜，以及金刚石薄膜涂层切削工具的制造方法，其特征在于，包括以下步骤：在脱碳气氛下直到表面变为η相，在渗碳气氛下对表面脱碳硬质合金基体进行热处理，在硬质合金基体的渗碳表面上沉积金刚石膜。

10. 发明授权

US06319439B1 Method of synthesizing even diamond film without cracks 失效
标题翻译：偶合金刚石薄膜无裂纹的方法
公开(公告)号：US06319439B1
公开(公告)日：2001-11-20
申请号：US09513319
申请日：2000-02-25
申请人： Jae-Kap Lee , Young Joon Baik , Kwang Yong Eun
发明人： Jae-Kap Lee , Young Joon Baik , Kwang Yong Eun
IPC分类号： C30B2500
CPC分类号： C23C16/272 , C23C16/27 , C30B25/105 , C30B29/04
摘要： A method of synthesizing an even free-standing diamond film without growth cracks is disclosed. The intrinsic tensile stress of a diamond film is compensated by an artificial compressive stress with a step down control of the deposition temperature during deposition. After a diamond film is deposited with a predetermined thickness at a deposition temperature, the deposition temperature is decreased in multiple steps during the deposition. The bending of the diamond wafer is minimized by using a tungsten substrate with higher elastic modulus than molybdenum.
摘要翻译：公开了一种合成均匀自立金刚石膜而没有生长裂纹的方法。金刚石膜的固有拉伸应力通过人造压缩应力补偿，同时降低沉积期间沉积温度的控制。在沉积温度下以预定厚度沉积金刚石膜之后，在沉积期间沉积温度以多个步骤降低。通过使用具有比钼更高的弹性模量的钨基材，使金刚石晶片的弯曲最小化。

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