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1. 发明授权

US06365230B1 Method of manufacturing a diamond film coated cutting tool 有权
标题翻译：金刚石薄膜涂层切割工具的制造方法
公开(公告)号：US06365230B1
公开(公告)日：2002-04-02
申请号：US09459026
申请日：1999-12-10
申请人： Young Joon Baik , Wook-Seong Lee , Kwang Yong Eun , Ki Woong Chae
发明人： Young Joon Baik , Wook-Seong Lee , Kwang Yong Eun , Ki Woong Chae
IPC分类号： C23C1627
CPC分类号： C23C14/044 , C23C16/0209 , C23C16/0254 , C23C16/27 , Y10T428/30
摘要： In order to provide an excellent toughness and a sufficient adhesive force without any limit in the content of other carbides in the substrate material and Co and in the size of the cemented carbides grains, the present invention provides a diamond film coated cutting tool, comprising a surface layer which cemented carbide grains are grown abnormally on the cemented carbide substrate, and a diamond film formed on the surface layer, and also a method for manufacturing a diamond film coated cutting tool, comprising the steps of heat-treating a surface of a cemented carbide substrate under a decarburizing atmosphere until the surface changes to a &eegr; phase, heat-treating the surface-decarburized cemented carbide substrate under a carburized atmosphere, depositing a diamond film on the carburized surface of the cemented carbide substrate.
摘要翻译：为了提供优异的韧性和足够的粘合力，对基材和Co中的其它碳化物的含量和硬质合金颗粒的尺寸没有任何限制，本发明提供了一种金刚石薄膜涂覆的切削工具，其包括在硬质合金基体上形成硬质合金颗粒的表面层异常生长，在表面层上形成的金刚石膜，以及金刚石薄膜涂层切削工具的制造方法，其特征在于，包括以下步骤：在脱碳气氛下直到表面变为η相，在渗碳气氛下对表面脱碳硬质合金基体进行热处理，在硬质合金基体的渗碳表面上沉积金刚石膜。

2. 发明授权

US06786176B2 Diamond film depositing apparatus and method thereof 失效
标题翻译：金刚石膜沉积设备及其方法
公开(公告)号：US06786176B2
公开(公告)日：2004-09-07
申请号：US10122459
申请日：2002-04-15
申请人： Wook-Seong Lee , Young Joon Baik , Kwang Yong Eun
发明人： Wook-Seong Lee , Young Joon Baik , Kwang Yong Eun
IPC分类号： C23C1600
CPC分类号： H01J37/32027 , H01J37/32009 , H01J37/32541
摘要： A diamond film depositing apparatus and method are disclosed in which a uniform and large plasma is formed on a substrate having a diameter of larger than 100 mm without using a heated filament cathode, without applying a magnetic field thereto, and without using a ballast resistance. The thusly formed plasma is maintained stably for a long time, so that a diamond thick film having a diameter of larger than 4 inches and a thickness of over hundreds of &mgr;m can be deposited on a flat or curved substrate and also on a Si wafer.
摘要翻译：公开了一种金刚石膜沉积设备和方法，其中在不使用加热的灯丝阴极的情况下，在直径大于100mm的基板上形成均匀且大的等离子体，而不对其施加磁场，并且不使用耐镇流性。这样形成的等离子体长时间保持稳定，使得直径大于4英寸，厚度超过数百个的金刚石厚膜可以沉积在平坦或弯曲的基板上以及Si晶片上。

3. 发明授权

US06399151B2 Diamond film depositing apparatus and method thereof 失效
公开(公告)号：US06399151B2
公开(公告)日：2002-06-04
申请号：US09427897
申请日：1999-10-27
申请人： Wook-Seong Lee , Young Joon Baik , Kwang Yong Eun
发明人： Wook-Seong Lee , Young Joon Baik , Kwang Yong Eun
IPC分类号： C23C1627
CPC分类号： H01J37/32027 , H01J37/32009 , H01J37/32541
摘要： A diamond film depositing apparatus and method are disclosed in which a uniform and large plasma is formed on a substrate having a diameter of larger than 100 mm without using a heated filament cathode, without applying a magnetic field thereto, and without using a ballast resistance. The thusly formed plasma is maintained stably for a long time, so that a diamond thick film having a diameter of larger than 4 inches and a thickness of over hundreds of &mgr;m can be deposited on a flat or curved substrate and also on a Si wafer.

4. 发明授权

US06443092B1 Apparatus for synthesizing diamond film by DC PACVD 失效
标题翻译：用于通过DC PACVD合成金刚石膜的装置
公开(公告)号：US06443092B1
公开(公告)日：2002-09-03
申请号：US09563481
申请日：2000-05-02
申请人： Jae-Kap Lee , Young Joon Baik , Kwang Yong Eun
发明人： Jae-Kap Lee , Young Joon Baik , Kwang Yong Eun
IPC分类号： C23C1600
CPC分类号： C23C16/272 , C23C16/503 , H01J37/32009 , H01J37/32541
摘要： The present invention relates to a diamond film synthesizing apparatus, and in particular to an apparatus for increasing the deposition area to several inches in diameter by using multiple cathodes (Multi-cathode DC PACVD). In the multi-cathode DC PACVD apparatus according to the present invention, the basic array of the cathodes is determined so that the uniformity of diamond films on a deposition area is maximized. A seven-cathode structure, in which six cathodes are radially arranged at the same distance of 43 mm surrounding one central cathode, in which a basic unit of the array is regular triangle, is designed for depositing uniform diamond films on a 4″ substrate. Here, the shape of six edge cathodes is rod of which the lateral face is joined to the connecting rod, so that non-uniformity of temperature in the edge cathode is minimized and then the reliability of the apparatus is much enhanced. The multi(7)-cathode DC PACVD apparatus enables one to deposit 4″ diamond films with a thickness uniformity of 3.8% thicker than 1 mm. The unit of the cathode array according to the present invention can be adapted when increasing the deposition area to 8 inches, 12 inches, etc.
摘要翻译：本发明涉及一种金刚石膜合成装置，特别涉及通过使用多个阴极（多阴极DC PACVD）将沉积面积增加到几英寸直径的装置。在根据本发明的多阴极DC PACVD装置中，阴极的基本阵列被确定为使得沉积区域上的金刚石膜的均匀性最大化。七阴极结构，其中六个阴极以围绕一个中心阴极的43mm的相同距离径向布置，其中阵列的基本单元为正三角形，被设计用于在4“衬底上沉积均匀的金刚石膜。这里，六边形阴极的形状是将侧面与连接杆接合的杆，使得边缘阴极的温度不均匀化最小化，从而大大提高了装置的可靠性。多（7） - 阴极DC PACVD装置使得能够沉积4“的金刚石膜，厚度均匀度比1mm厚3.8％。当将沉积区域增加到8英寸，12英寸等时，根据本发明的阴极阵列的单元可以被适配

5. 发明授权

US06319439B1 Method of synthesizing even diamond film without cracks 失效
标题翻译：偶合金刚石薄膜无裂纹的方法
公开(公告)号：US06319439B1
公开(公告)日：2001-11-20
申请号：US09513319
申请日：2000-02-25
申请人： Jae-Kap Lee , Young Joon Baik , Kwang Yong Eun
发明人： Jae-Kap Lee , Young Joon Baik , Kwang Yong Eun
IPC分类号： C30B2500
CPC分类号： C23C16/272 , C23C16/27 , C30B25/105 , C30B29/04
摘要： A method of synthesizing an even free-standing diamond film without growth cracks is disclosed. The intrinsic tensile stress of a diamond film is compensated by an artificial compressive stress with a step down control of the deposition temperature during deposition. After a diamond film is deposited with a predetermined thickness at a deposition temperature, the deposition temperature is decreased in multiple steps during the deposition. The bending of the diamond wafer is minimized by using a tungsten substrate with higher elastic modulus than molybdenum.
摘要翻译：公开了一种合成均匀自立金刚石膜而没有生长裂纹的方法。金刚石膜的固有拉伸应力通过人造压缩应力补偿，同时降低沉积期间沉积温度的控制。在沉积温度下以预定厚度沉积金刚石膜之后，在沉积期间沉积温度以多个步骤降低。通过使用具有比钼更高的弹性模量的钨基材，使金刚石晶片的弯曲最小化。

6. 发明申请

US20100065892A1 Bio-sensor and method of manufacturing the same 有权
标题翻译：生物传感器及其制造方法
公开(公告)号：US20100065892A1
公开(公告)日：2010-03-18
申请号：US12589622
申请日：2008-10-23
申请人： Gyuweon Hwang , Wook Seong Lee , Jeung-hyun Jeong , Jong-Keuk Park , Young Joon Baik
发明人： Gyuweon Hwang , Wook Seong Lee , Jeung-hyun Jeong , Jong-Keuk Park , Young Joon Baik
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： G01N27/4145 , H01L2924/0002 , H01L2924/00
摘要： A bio-sensor includes a gate dielectric formed on a silicon semiconductor substrate, a gate electrode of a conductive diamond film formed on the gate dielectric, probe molecules bonded on the gate electrode for detecting biomolecules, and source/drain regions formed on the semiconductor substrate at the sides of the gate electrode. The gate electrode is a comb shape or a lattice shape.
摘要翻译：生物传感器包括形成在硅半导体衬底上的栅电介质，形成在栅电介质上的导电金刚石膜的栅电极，键合在用于检测生物分子的栅电极上的探针分子，以及形成在半导体衬底上的源/漏区在栅电极的侧面。栅电极是梳形或格子形状。

7. 发明授权

US08154058B2 Bio-sensor and method of manufacturing the same 有权
标题翻译：生物传感器及其制造方法
公开(公告)号：US08154058B2
公开(公告)日：2012-04-10
申请号：US12589622
申请日：2008-10-23
申请人： Gyu Weon Hwang , Wook Seong Lee , Jeung-hyun Jeong , Jong-Keuk Park , Young Joon Baik
发明人： Gyu Weon Hwang , Wook Seong Lee , Jeung-hyun Jeong , Jong-Keuk Park , Young Joon Baik
IPC分类号： H01L23/58 , H01L27/14
CPC分类号： G01N27/4145 , H01L2924/0002 , H01L2924/00
摘要： A bio-sensor includes a gate dielectric formed on a silicon semiconductor substrate, a gate electrode of a conductive diamond film formed on the gate dielectric, probe molecules bonded on the gate electrode for detecting biomolecules, and source/drain regions formed on the semiconductor substrate at the sides of the gate electrode. The gate electrode is a comb shape or a lattice shape.
摘要翻译：生物传感器包括形成在硅半导体衬底上的栅电介质，形成在栅电介质上的导电金刚石膜的栅电极，键合在用于检测生物分子的栅电极上的探针分子，以及形成在半导体衬底上的源/漏区在栅电极的侧面。栅电极是梳形或格子形状。

8. 发明授权

US08034411B2 Method of preventing abnormal large grains from being included into thin nano-crystalline diamond film 有权
标题翻译：防止异常大颗粒纳入薄纳米晶金刚石薄膜的方法
公开(公告)号：US08034411B2
公开(公告)日：2011-10-11
申请号：US11931963
申请日：2007-10-31
申请人： Heqing Li , Wook Seong Lee , Young Joon Baik , Jong-Keuk Park
发明人： Heqing Li , Wook Seong Lee , Young Joon Baik , Jong-Keuk Park
IPC分类号： C23C16/00 , C23C16/26 , C23C16/52
CPC分类号： C23C16/277 , B82Y30/00 , C23C16/271 , C23C16/279
摘要： The present invention relates to a method of preventing abnormal large grains from being included in a NCD thin film during a hot filament CVD process by appropriately controlling the deposition condition regarding a temperature-measuring means, a deposition pressure, an electrical potential and/or the composition of a raw material gas flow.
摘要翻译：本发明涉及通过适当地控制关于温度测量装置，沉积压力，电位和/或电压的沉积条件，防止在热丝CVD过程中异常大晶粒被包含在NCD薄膜中的方法原料气流的组成。

9. 发明申请

US20090074986A1 METHOD OF PREVENTING ABNORMAL LARGE GRAINS FROM BEING INCLUDED INTO THIN NANO-CRYSTALLINE DIAMOND FILM 有权
标题翻译：防止异种大颗粒从包括在纳米晶体金刚石薄膜中的方法
公开(公告)号：US20090074986A1
公开(公告)日：2009-03-19
申请号：US11931963
申请日：2007-10-31
申请人： Heqing Li , Wook Seong Lee , Young Joon Baik , Jong-Keuk Park
发明人： Heqing Li , Wook Seong Lee , Young Joon Baik , Jong-Keuk Park
IPC分类号： C23C16/52 , C23C16/50
CPC分类号： C23C16/277 , B82Y30/00 , C23C16/271 , C23C16/279
摘要： The present invention relates to a method of preventing abnormal large grains from being included in a NCD thin film during a hot filament CVD process by appropriately controlling the deposition condition regarding a temperature-measuring means, a deposition pressure, an electrical potential and/or the composition of a raw material gas flow.
摘要翻译：本发明涉及通过适当地控制关于温度测量装置，沉积压力，电位和/或电压的沉积条件，防止在热丝CVD过程中异常大晶粒被包含在NCD薄膜中的方法原料气流的组成。

10. 发明授权

US06652762B2 Method for fabricating nano-sized diamond whisker, and nano-sized diamond whisker fabricated thereby 失效
标题翻译：制造纳米级金刚石晶须的方法，以及由此制造的纳米级金刚石晶须
公开(公告)号：US06652762B2
公开(公告)日：2003-11-25
申请号：US09412536
申请日：1999-10-05
申请人： Young Joon Baik , Eun Song Baik , Dong Ryul Jeon
发明人： Young Joon Baik , Eun Song Baik , Dong Ryul Jeon
IPC分类号： C03C1500
CPC分类号： H01J9/025 , C01B33/06 , C30B25/00 , C30B25/005 , C30B29/04 , C30B29/605 , H01J2201/30457
摘要： A method for fabricating a nano-sized diamond whisker includes the steps of depositing a diamond film on a substrate, forming a nano-sized mask pattern on the deposited diamond film, and etching the diamond film by using the nano-sized pattern as an etching mask. The nano-sized diamond whisker can be used as a new field emission cold cathode device, thereby advancing a practical use of a field emission device having high performance, and can also be applied to various fields such as a new composite material and a mechanical device.
摘要翻译：制造纳米尺寸金刚石晶须的方法包括以下步骤：在基底上沉积金刚石膜，在沉积的金刚石膜上形成纳米尺寸的掩模图案，并通过使用纳米尺寸图案作为蚀刻来蚀刻金刚石膜面具。纳米尺寸的金刚石晶须可以用作新的场致发射冷阴极器件，从而推进了具有高性能的场致发射器件的实际应用，并且还可以应用于各种领域，例如新的复合材料和机械装置。

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