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    • 2. 发明申请
    • Liquid crystal display and a display panel therefor
    • 液晶显示器及其显示面板
    • US20060059837A1
    • 2006-03-23
    • US11222103
    • 2005-09-08
    • Soon-Il AhnYou-Lee Song
    • Soon-Il AhnYou-Lee Song
    • E04B2/00
    • G02F1/134336G02F1/133707
    • A thin film transistor array panel for a liquid crystal display, a liquid crystal display and a manufacturing method thereof are provided. The display panel includes: a substrate; and a first electrode portion disposed on the substrate, the first electrode portion having two pairs of main edges facing each other and a first cutout oblique to the main edges, wherein the main edges include first and second edges, the first electrode portion has an oblique edge substantially parallel to the first cutout, the oblique connecting the first edge and the second edge, the first edge includes a first portion extending from the oblique edge to an end of the first cutout, and the oblique edge is substantially equal to or longer than a half of the first portion of the first edge.
    • 提供一种用于液晶显示器的薄膜晶体管阵列面板,液晶显示器及其制造方法。 显示面板包括:基板; 以及设置在所述基板上的第一电极部分,所述第一电极部分具有彼此面对的两对主边缘和相对于所述主边缘倾斜的第一切口,其中所述主边缘包括第一边缘和第二边缘,所述第一电极部分具有倾斜 边缘基本上平行于第一切口,倾斜连接第一边缘和第二边缘,第一边缘包括从倾斜边缘延伸到第一切口的端部的第一部分,并且倾斜边缘基本上等于或大于 第一边缘的第一部分的一半。
    • 4. 发明授权
    • Thin film transistor array panel, manufacturing method thereof, and mask therefor
    • 薄膜晶体管阵列面板及其制造方法及其掩模
    • US07709304B2
    • 2010-05-04
    • US11824879
    • 2007-07-02
    • Woon-Yong ParkWon-Hee LeeIl-Gon KimSeung-Taek LimYou-Lee SongSahng-Ik Jun
    • Woon-Yong ParkWon-Hee LeeIl-Gon KimSeung-Taek LimYou-Lee SongSahng-Ik Jun
    • H01L21/00
    • G02F1/136227G02F2001/136236G03F1/00
    • A passivation layer is deposited and a photoresist is formed. The photoresist includes first to third portions with decreased thickness, the second portions located on portions of drain electrodes and data lines and the third portions located on portions of gate lines. A mask for forming the photoresist has rectilinear slits with width and distance of about 0.8-2.0 microns on an area corresponding to the second portions. The passivation layer and an underlying semiconductor layer as well as the photoresist are etched to expose portions of the gate insulating layer under the third portions of the photoresist as well as portions of the passivation layer under the second portions of the photoresist. The exposed portions of the passivation layer and the gate insulating layer are removed to expose the drain electrodes, the gate lines and the data lines as well as portions of the semiconductor layer, which are subsequently removed.
    • 沉积钝化层并形成光致抗蚀剂。 光致抗蚀剂包括具有减小的厚度的第一至第三部分,第二部分位于漏电极和数据线的部分上,第三部分位于栅极线的部分上。 用于形成光致抗蚀剂的掩模具有在对应于第二部分的区域上具有约0.8-2.0微米的宽度和距离的直线狭缝。 蚀刻钝化层和底层半导体层以及光致抗蚀剂以暴露在光致抗蚀剂的第三部分之下的栅绝缘层的部分以及在光致抗蚀剂的第二部分下的钝化层的部分。 去除钝化层和栅极绝缘层的暴露部分,以暴露出漏电极,栅极线和数据线以及随后被去除的部分半导体层。
    • 5. 发明申请
    • Thin film transistor array panel, manufacturing method thereof, and mask therefor
    • 薄膜晶体管阵列面板及其制造方法及其掩模
    • US20070259289A1
    • 2007-11-08
    • US11824879
    • 2007-07-02
    • Woon-Yong ParkWon-Hee LeeIl-Gon KimSeung-Taek LimYou-Lee SongSahng-Ik Jun
    • Woon-Yong ParkWon-Hee LeeIl-Gon KimSeung-Taek LimYou-Lee SongSahng-Ik Jun
    • G03C5/00
    • G02F1/136227G02F2001/136236G03F1/00
    • A passivation layer is deposited and a photoresist is formed. The photoresist includes first to third portions with decreased thickness, the second portions located on portions of drain electrodes and data lines and the third portions located on portions of gate lines. A mask for forming the photoresist has rectilinear slits with width and distance of about 0.8-2.0 microns on an area corresponding to the second portions. The passivation layer and an underlying semiconductor layer as well as the photoresist are etched to expose portions of the gate insulating layer under the third portions of the photoresist as well as portions of the passivation layer under the second portions of the photoresist. The exposed portions of the passivation layer and the gate insulating layer are removed to expose the drain electrodes, the gate lines and the data lines as well as portions of the semiconductor layer, which are subsequently removed.
    • 沉积钝化层并形成光致抗蚀剂。 光致抗蚀剂包括具有减小的厚度的第一至第三部分,第二部分位于漏电极和数据线的部分上,第三部分位于栅极线的部分上。 用于形成光致抗蚀剂的掩模具有在对应于第二部分的区域上具有约0.8-2.0微米的宽度和距离的直线狭缝。 蚀刻钝化层和底层半导体层以及光致抗蚀剂以暴露在光致抗蚀剂的第三部分之下的栅极绝缘层的部分以及在光致抗蚀剂的第二部分下的钝化层的部分。 去除钝化层和栅极绝缘层的暴露部分,以露出漏电极,栅极线和数据线以及随后被去除的部分半导体层。
    • 6. 发明授权
    • Liquid crystal display and a display panel therefor
    • 液晶显示器及其显示面板
    • US08755014B2
    • 2014-06-17
    • US11222103
    • 2005-09-08
    • Soon-Il AhnYou-Lee Song
    • Soon-Il AhnYou-Lee Song
    • G02F1/1337G02F1/1343
    • G02F1/134336G02F1/133707
    • A thin film transistor array panel for a liquid crystal display, a liquid crystal display and a manufacturing method thereof are provided. The display panel includes: a substrate; and a first electrode portion disposed on the substrate, the first electrode portion having two pairs of main edges facing each other and a first cutout oblique to the main edges, wherein the main edges include first and second edges, the first electrode portion has an oblique edge substantially parallel to the first cutout, the oblique connecting the first edge and the second edge, the first edge includes a first portion extending from the oblique edge to an end of the first cutout, and the oblique edge is substantially equal to or longer than a half of the first portion of the first edge.
    • 提供一种用于液晶显示器的薄膜晶体管阵列面板,液晶显示器及其制造方法。 显示面板包括:基板; 以及设置在所述基板上的第一电极部分,所述第一电极部分具有彼此面对的两对主边缘和相对于所述主边缘倾斜的第一切口,其中所述主边缘包括第一边缘和第二边缘,所述第一电极部分具有倾斜 边缘基本上平行于第一切口,倾斜连接第一边缘和第二边缘,第一边缘包括从倾斜边缘延伸到第一切口的端部的第一部分,并且倾斜边缘基本上等于或大于 第一边缘的第一部分的一半。