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1. 发明申请

US20110042777A1 Deep trench isolation structure 审中-公开
标题翻译：深沟槽隔离结构
公开(公告)号：US20110042777A1
公开(公告)日：2011-02-24
申请号：US12542721
申请日：2009-08-18
申请人： You-Di Jhang , Chun-Yao Huang , Kuo-Hua Ho
发明人： You-Di Jhang , Chun-Yao Huang , Kuo-Hua Ho
IPC分类号： H01L29/06
CPC分类号： H01L21/76232
摘要： A deep trench isolation structure including a deep trench disposed within a substrate to surround an active area on the substrate and a dielectric material filled within the deep trench. The deep trench comprises at least a corner in an arc shape layout or in a polygonal line shape layout. Accordingly, the deep trench isolation structure can be obtained in a better stress condition and with less process time for trench filling.
摘要翻译：深沟槽隔离结构，其包括设置在衬底内的深沟槽，以围绕衬底上的有源区域和填充在深沟槽内的电介质材料。深沟槽至少包括弧形布局或折线形布置的角部。因此，可以在更好的应力条件下获得深沟槽隔离结构，并且沟槽填充的处理时间较短。

2. 发明授权

US07319073B2 Method of reducing silicon damage around laser marking region of wafers in STI CMP process 有权
标题翻译：在STI CMP工艺中减少硅片激光打标区域周围硅损伤的方法
公开(公告)号：US07319073B2
公开(公告)日：2008-01-15
申请号：US11160919
申请日：2005-07-15
申请人： You-Di Jhang
发明人： You-Di Jhang
IPC分类号： H01L21/311 , H01L21/76
CPC分类号： H01L21/31053 , H01L21/76224 , H01L23/544 , H01L2223/54433 , H01L2223/54453 , H01L2223/54493 , H01L2924/0002 , H01L2924/00
摘要： A wafer has thereon a plurality of integrated circuit die areas, scribe line that surrounds each of the integrated circuit die areas, and a laser marking region having therein a laser marking feature. A pad layer is formed on the wafer. AA photoresist pattern is formed on the pad layer. The AA photoresist pattern includes trench openings that expose STI trench areas within the integrated circuit die areas and dummy openings that merely expose a transitioning region of the laser-marking region. The pad layer and the substrate are etched through the trench openings and dummy openings, to form STI trenches within the integrated circuit die areas and dummy trenches in the transitioning region. A trench fill dielectric is deposited over the wafer and fills the STI trenches and the dummy trenches. Using the pad nitride layer as a polish stop layer, chemical mechanical polishing the trench fill dielectric.
摘要翻译：晶片在其上具有多个集成电路管芯区域，围绕每个集成电路管芯区域的划线，以及其中具有激光标记特征的激光标记区域。衬垫层形成在晶片上。在衬垫层上形成AA光刻胶图形。 AA光致抗蚀剂图案包括暴露集成电路管芯区域内的STI沟槽区域和仅露出激光标记区域的过渡区域的虚拟开口的沟槽开口。通过沟槽开口和虚拟开口蚀刻焊盘层和衬底，以在集成电路管芯区域和过渡区域中的虚设沟槽中形成STI沟槽。在晶片上沉积沟槽填充电介质，并填充STI沟槽和虚拟沟槽。使用衬垫氮化物层作为抛光停止层，化学机械抛光沟槽填充电介质。

3. 发明申请

US20130062701A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130062701A1
公开(公告)日：2013-03-14
申请号：US13227487
申请日：2011-09-08
申请人： Chiu-Te Lee , Chun-Mao Chiou , You-Di Jhang
发明人： Chiu-Te Lee , Chun-Mao Chiou , You-Di Jhang
IPC分类号： H01L27/092 , H01L21/768 , H01L29/78 , H01L21/28
CPC分类号： H01L29/66545 , H01L21/76843 , H01L21/76865 , H01L21/76895 , H01L21/76897 , H01L21/823437 , H01L23/485 , H01L29/665 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A manufacturing method of a semiconductor device includes the following steps. First, a substrate is provided. At least one sacrificial gate structure is formed on the substrate, at least one diffusion region is formed in the substrate at each of two sides of the sacrificial gate structure, and a first inter-layer dielectric layer is formed to cover the diffusion region. A gate recess is then formed in the sacrificial gate structure. A first diffusion contact hole is then formed in the first inter-layer dielectric layer and at least partially exposes the diffusion region. A metal layer is subsequently formed in the gate recess and the first diffusion contact hole.
摘要翻译：半导体器件的制造方法包括以下步骤。首先，提供基板。在基板上形成至少一个牺牲栅极结构，在牺牲栅极结构的两侧的每一侧的基板中形成至少一个扩散区，并且形成第一层间电介质层以覆盖扩散区。然后在牺牲栅极结构中形成栅极凹部。然后在第一层间电介质层中形成第一扩散接触孔，并且至少部分地暴露扩散区域。随后在栅极凹部和第一扩散接触孔中形成金属层。

4. 发明申请

US20070015368A1 METHOD OF REDUCING SILICON DAMAGE AROUND LASER MARKING REGION OF WAFERS IN STI CMP PROCESS 有权
标题翻译：降低STI CMP工艺中波形的激光标记区域的硅损伤的方法
公开(公告)号：US20070015368A1
公开(公告)日：2007-01-18
申请号：US11160919
申请日：2005-07-15
申请人： You-Di Jhang
发明人： You-Di Jhang
IPC分类号： H01L21/311
CPC分类号： H01L21/31053 , H01L21/76224 , H01L23/544 , H01L2223/54433 , H01L2223/54453 , H01L2223/54493 , H01L2924/0002 , H01L2924/00
摘要： A wafer has thereon a plurality of integrated circuit die areas, scribe line that surrounds each of the integrated circuit die areas, and a laser marking region having therein a laser marking feature. A pad layer is formed on the wafer. AA photoresist pattern is formed on the pad layer. The AA photoresist pattern includes trench openings that expose STI trench areas within the integrated circuit die areas and dummy openings that merely expose a transitioning region of the laser-marking region. The pad layer and the substrate are etched through the trench openings and dummy openings, to form STI trenches within the integrated circuit die areas and dummy trenches in the transitioning region. A trench fill dielectric is deposited over the wafer and fills the STI trenches and the dummy trenches. Using the pad nitride layer as a polish stop layer, chemical mechanical polishing the trench fill dielectric.
摘要翻译：晶片在其上具有多个集成电路管芯区域，围绕每个集成电路管芯区域的划线，以及其中具有激光标记特征的激光标记区域。衬垫层形成在晶片上。在衬垫层上形成AA光刻胶图形。 AA光致抗蚀剂图案包括暴露集成电路管芯区域内的STI沟槽区域和仅露出激光标记区域的过渡区域的虚拟开口的沟槽开口。通过沟槽开口和虚拟开口蚀刻焊盘层和衬底，以在集成电路管芯区域和过渡区域中的虚设沟槽中形成STI沟槽。在晶片上沉积沟槽填充电介质，并填充STI沟槽和虚拟沟槽。使用衬垫氮化物层作为抛光停止层，化学机械抛光沟槽填充电介质。

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