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1. 发明授权

US07968399B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07968399B2
公开(公告)日：2011-06-28
申请号：US12106088
申请日：2008-04-18
申请人： Yoshinori Kitamura , Shigeki Sugimoto
发明人： Yoshinori Kitamura , Shigeki Sugimoto
IPC分类号： H01L21/8249
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L27/11524
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate including first and second element-formation regions partitioned by an isolation trench, first and second lower gate insulating films formed on the first and second element-formation regions, first and second floating gates formed on the first and second lower gate insulating films, an isolation insulating film formed at least in the isolation trench and has a depression formed in an upper surface thereof, an upper gate insulating film formed on the first and second floating gates, and a control gate line including an opposed portion opposed to the first and second floating gates, with the upper gate insulating film being interposed, and a portion located inside the depression, the first floating gate including a side surface opposed to the second floating gate and entirely aligns with a side surface included in the first element-formation region and defined by the isolation trench.
摘要翻译：公开了一种半导体器件，包括半导体衬底，该半导体衬底包括由隔离沟槽分隔开的第一和第二元件形成区域，形成在第一和第二元件形成区域上的第一和第二下部栅极绝缘膜，形成在第一和第二元件形成区域上的第一和第二浮置栅极和第二下栅极绝缘膜，隔离绝缘膜，至少形成在所述隔离沟槽中，并且在其上表面上形成有凹部，形成在所述第一和第二浮栅上的上栅极绝缘膜，以及控制栅极线，与第一和第二浮动栅极相对的相对部分，其中上部栅极绝缘膜被插入，并且位于凹部内部的部分，第一浮动栅极包括与第二浮动栅极相对的侧表面，并且与包括的侧表面完全对准在第一元件形成区域中并由隔离沟槽限定。

2. 发明申请

US20100127608A1 CASING STRUCTURE FOR CONTAINER REFRIGERATOR AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：集装箱冷冻机的结构及其制造方法
公开(公告)号：US20100127608A1
公开(公告)日：2010-05-27
申请号：US12597455
申请日：2008-02-19
申请人： Yoshinori Kitamura , Hirofumi Hirade
发明人： Yoshinori Kitamura , Hirofumi Hirade
IPC分类号： F25D23/06 , B23P15/26
CPC分类号： F25D23/065 , B60P3/20 , B65D88/745 , B65D90/022 , F25D11/003 , F25D2201/126 , Y10T29/49359
摘要： In a casing structure for a container refrigerator which includes an outer casing and an inner casing between which a thermal barrier is formed, a structure is provided in which a foaming agent for forming the thermal barrier can be prevented from leaking and operation time and manufacturing cost can be reduced.On an inner side surface (30a) of a flange (34) of the outer casing (30), a rib (34c) is formed so as to be engaged with an outer peripheral edge (35b) of the inner casing (35) when the foaming agent (38) is foamed in a foaming space (V) between the outer casing (30) and the inner casing (35). A sealant (40) is provided in a gap between the outer peripheral edge (35b) of the inner casing (35) and the inner side surface (30a) of the outer casing (30) and/or in part of the gap on a side of the foaming space (V).
摘要翻译：在一种用于容器冷藏库的壳体结构中，其包括外壳和形成有隔热材料的内壳，提供了一种结构，其中可以防止用于形成热障的发泡剂的泄漏和操作时间和制造成本可以减少在外壳（30）的凸缘（34）的内侧面（30a）上形成有与内壳（35）的外周缘（35b）卡合的肋（34c）发泡剂（38）在外壳（30）和内壳（35）之间的发泡空间（V）中发泡。密封剂（40）设置在内壳（35）的外周边缘（35b）与外壳（30）的内侧表面（30a）之间的间隙中和/或部分间隙一侧的发泡空间（V）。

3. 发明申请

US20090241588A1 Casing Structure for Refrigeration System and Method for Producing Casing Therefor 审中-公开
标题翻译：制冷系统套管结构及其套管生产方法
公开(公告)号：US20090241588A1
公开(公告)日：2009-10-01
申请号：US11992662
申请日：2006-09-29
申请人： Yoshinori Kitamura , Hiroki Ishihara
发明人： Yoshinori Kitamura , Hiroki Ishihara
IPC分类号： F25D11/00 , B21D53/06
CPC分类号： F25D23/065 , B65D90/00 , F25D23/067 , Y10T29/49359
摘要： A component mounting plate (s1) of a casing for a refrigeration system includes an inner sub-plate (2), an outer sub-plate (3) and a heat insulating layer (4) filled with a heat insulating material, such as urethane. The inner sub-plate (2) is formed with a mounting hole (31) through which a mounting bolt (30) for mounting a component (16) to the inner sub-plate (2) passes. The heat insulating layer (4) contains a nut (40) disposed to correspond to the mounting hole (31) and an L-piece (41) disposed to correspond to the mounting hole (31) and including an extension (43) and a seat (42) with the nut (40) welded thereto. The L-piece is disposed in the heat insulating layer (4) with the seat (42) in contact with the inner sub-plate (2) and the extension (43) extending towards the outer sub-plate (3).
摘要翻译：用于制冷系统的壳体的部件安装板（s1）包括内部副板（2），外部副板（3）和填充有绝热材料（例如聚氨酯）的绝热层（4）。内部副板（2）形成有安装孔（31），用于将部件（16）安装到内侧副板（2）的安装螺栓（30）穿过该安装孔。绝热层（4）包括与安装孔（31）相对设置的螺母（40）和与安装孔（31）对应设置的L形件（41），其包括延伸部（43）和座（42）与螺母（40）焊接在一起。 L形件设置在绝热层（4）中，座（42）与内子板（2）接触，延伸部（43）朝向外子板（3）延伸。

4. 发明申请

US20050093080A1 Semiconductor device and method of manufacturing the same 失效
公开(公告)号：US20050093080A1
公开(公告)日：2005-05-05
申请号：US11000173
申请日：2004-12-01
申请人： Yoshinori Kitamura , Shigeki Sugimoto
发明人： Yoshinori Kitamura , Shigeki Sugimoto
IPC分类号： H01L21/00 , H01L21/28 , H01L21/331 , H01L21/82 , H01L21/8222 , H01L21/8247 , H01L27/115 , H01L29/76 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L27/11524
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate including first and second element-formation regions partitioned by an isolation trench, first and second lower gate insulating films formed on the first and second element-formation regions, first and second floating gates formed on the first and second lower gate insulating films, an isolation insulating film formed at least in the isolation trench and has a depression formed in an upper surface thereof, an upper gate insulating film formed on the first and second floating gates, and a control gate line including an opposed portion opposed to the first and second floating gates, with the upper gate insulating film being interposed, and a portion located inside the depression, the first floating gate including a side surface opposed to the second floating gate and entirely aligns with a side surface included in the first element-formation region and defined by the isolation trench.

5. 发明申请

US20050051834A1 Semiconductor device and method of manufacturing the same 失效
公开(公告)号：US20050051834A1
公开(公告)日：2005-03-10
申请号：US10728928
申请日：2003-12-08
申请人： Yoshinori Kitamura , Shigeki Sugimoto
发明人： Yoshinori Kitamura , Shigeki Sugimoto
IPC分类号： H01L21/00 , H01L21/28 , H01L21/331 , H01L21/82 , H01L21/8222 , H01L21/8247 , H01L27/115 , H01L29/76 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L27/11524
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate including first and second element-formation regions partitioned by an isolation trench, first and second lower gate insulating films formed on the first and second element-formation regions, first and second floating gates formed on the first and second lower gate insulating films, an isolation insulating film formed at least in the isolation trench and has a depression formed in an upper surface thereof, an upper gate insulating film formed on the first and second floating gates, and a control gate line including an opposed portion opposed to the first and second floating gates, with the upper gate insulating film being interposed, and a portion located inside the depression, the first floating gate including a side surface opposed to the second floating gate and entirely aligns with a side surface included in the first element-formation region and defined by the isolation trench.

6. 发明授权

US06544369B1 Process for producing thin film-like material having decorative surface 有权
标题翻译：具有装饰面的薄膜状材料的制造方法
公开(公告)号：US06544369B1
公开(公告)日：2003-04-08
申请号：US09695918
申请日：2000-10-26
申请人： Yoshinori Kitamura , Shigenobu Matsumoto
发明人： Yoshinori Kitamura , Shigenobu Matsumoto
IPC分类号： B44C1165
CPC分类号： B32B38/10 , B32B15/08 , B32B37/025 , B32B37/12 , B32B38/06 , B32B2038/0092 , B32B2307/75 , B41M3/12 , B44C1/165 , G03H1/0236 , G03H1/0244 , G03H2001/0284 , G03H2001/187 , G03H2240/55 , G03H2250/10 , G03H2250/12 , G03H2250/40 , Y10S428/914 , Y10T428/2804 , Y10T428/31634
摘要： Thin film-like material that has printability, that can have unique surface patterns of various kinds, and that can have a design having an effect that has been never produced, and process of producing it are provided. The thin film-like material has a laminated structure in which an adhesive layer and a metal thin layer are laid in this order on the entire surface or parts of the surface of one or each of opposite sides of a base material A surface of the metal thin layer is formed by transfer process as a smooth surface having a mirror pattern, a surface having a mat pattern, a surface having a hairline pattern, a surface having an embossed pattern, a surface having a hologram pattern or a surface having two or more of those patterns combined appropriately.
摘要翻译：提供具有可印刷性的薄膜状材料，其可以具有各种各样的独特的表面图案，并且可以具有从未产生的效果的设计及其制造工艺。薄膜状材料具有层叠结构，其中粘合剂层和金属薄层依次铺设在基材A的相对侧的一个或每个的表面的整个表面的整个表面或部分上。金属的表面薄层通过转印工艺形成为具有镜面图案的光滑表面，具有垫子图案的表面，具有发丝图案的表面，具有压花图案的表面，具有全息图图案的表面或具有两个或更多个表面的表面的这些模式合适组合。

7. 发明授权

US5377465A Ultra-high multi-story buildings and construction thereof 失效
标题翻译：超高层多层建筑及其建筑
公开(公告)号：US5377465A
公开(公告)日：1995-01-03
申请号：US820887
申请日：1992-03-18
申请人： Takuji Kobori , Shigeru Ban , Toshihiko Kubota , Osamu Nohira , Norihide Koshika , Koji Kondo , Sadaaki Masuda , Yoshinori Kitamura , Hideo Tanaka , Hiroomi Sato , A. Scott Howe
发明人： Takuji Kobori , Shigeru Ban , Toshihiko Kubota , Osamu Nohira , Norihide Koshika , Koji Kondo , Sadaaki Masuda , Yoshinori Kitamura , Hideo Tanaka , Hiroomi Sato , A. Scott Howe
IPC分类号： E04B1/34 , E04H1/00
CPC分类号： E04B1/3404
摘要： An extra super multi-story building having one piece of extra super multi-story of about 200 story construction, two pieces of extra super multi-stories of about 150 story construction and one piece of extra super multi-story of about 100 story construction. Each extra super multi-story includes two through four pieces of tower-like super multi-stories of about 50 story construction and of about 50 m in diameter (floor area: about 200 m.sup.2 /story). A sky lobby is provided about every 50 stories connecting the extra super multi-stories. Four shuttle elevators lead from the ground to the sky lobbies, and a sightseeing tower and high-rise garden (sky dome) are provided at the rooftop of the extra super multi-story building. Main facilities such as offices, hotels and residences are arranged in each extra multi-story. In addition, in order to be able to construct the extra super multi-story building, the individual extra super multi-story buildings are monolithically connected with one another by girders every several ten stories, and a space truss is constructed on the outside of each extra super multi-story building.
摘要翻译： PCT No.PCT / JP91 / 00341 Sec。 371日期：1992年3月18日 102（e）1992年3月18日PCT 1991年3月13日PCT公布。 WO91 / 18161 PCT出版物日期：1991年11月28日。超级多层建筑有超过200层的超级多层建筑，超过150层的超级多层次的超级多层建筑，大概100层建筑故事。每个额外的超级多层楼包括大约50层建筑和直径约50米（占地面积：约200平方米/层）的两层至四层塔式超级多层楼。每隔50层提供一个天空大厅，连接超级多层次的超级故事。四座穿梭电梯从地面到天空大堂，另外还有超级多层建筑的屋顶设有观光塔和高层花园（天空圆顶）。主要设施如办公室，酒店和住宅都安排在每个额外的多层次。另外，为了能够构建超级多层建筑，个别的超级多层建筑每隔十层就通过大梁相互整体连接起来，并在每个楼层的外面建造一个空间桁架超级多层建筑。

8. 发明授权

US4484806A Automatic focussing apparatus 失效
标题翻译：自动聚焦装置
公开(公告)号：US4484806A
公开(公告)日：1984-11-27
申请号：US488605
申请日：1983-04-25
申请人： Masami Onishi , Yoshinori Kitamura , Shoji Nishikawa
发明人： Masami Onishi , Yoshinori Kitamura , Shoji Nishikawa
IPC分类号： H04N5/232 , G03B3/10
CPC分类号： H04N5/23212
摘要： The present invention relates to an automatic focussing apparatus for a television camera using video signal and comprises a variable optical path means, for example, an optical glass and a piezo-electric device disposed in an optical pass, and the automatic focussing apparatus varies minutely an optical path length responding to given frequency and controlls lens position using a given frequency component which is derived from a high frequency component in said video signal in a manner that said high frequency component becomes maximum.
摘要翻译：本发明涉及一种使用视频信号的电视摄像机的自动聚焦装置，并且包括可变光路装置，例如设置在光学通过中的光学玻璃和压电装置，并且自动聚焦装置微小地变化响应于给定频率的光路长度，并且以所述高频分量变为最大的方式，使用从所述视频信号中的高频分量导出的给定频率分量来控制透镜位置。

9. 发明申请

US20100072210A1 CAP, MULTI-LAYERED PANEL, AND REFRIGERATED CONTAINER 审中-公开
标题翻译： CAP，多层面板和制冷容器
公开(公告)号：US20100072210A1
公开(公告)日：2010-03-25
申请号：US12312923
申请日：2007-10-31
申请人： Makoto Ikemiya , Yoshinori Kitamura , Shouzou Kameyama
发明人： Makoto Ikemiya , Yoshinori Kitamura , Shouzou Kameyama
IPC分类号： B65D81/38 , B65D88/74 , B65D90/02 , F16B37/14 , B32B3/24 , B23P11/00
CPC分类号： F25D23/067 , B29C44/1261 , F16B37/122 , F25D2201/126 , Y10T29/49826 , Y10T428/24322
摘要： A multi-layered panel wherein an interlayer material in a fluid state or in a solidified state transformed therefrom is provided between a pair of panels, comprises an internally-threaded member fitted in a through-hole formed in an outer one of the panels, and a cap capped on the internally-threaded member. The cap has a bottomed tubular-shaped body portion adapted to be brought into close contact with an outer peripheral surface of the internally-threaded member while sealing a threaded hole of the internally-threaded member, and a panel-contact contributing portion supported by the body portion, and adapted to be, at least partly, closely contactable with the outer panel.
摘要翻译：一种多层面板，其中在一对面板之间设置有流体状态或固化状态的中间层材料，其包括装配在形成在所述面板的外侧的通孔中的内螺纹构件，以及一个盖在内螺纹构件上的盖子。盖具有有底的管状主体部分，其适于在密封内螺纹构件的螺纹孔的同时与内螺纹构件的外周表面紧密接触，并且面板接触作用部分由主体部分，并且适于至少部分地与外板紧密接触。

10. 发明申请

US20080251883A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080251883A1
公开(公告)日：2008-10-16
申请号：US12142869
申请日：2008-06-20
申请人： Yoshinori KITAMURA , Koichi Matsuno , Kazunori Nishikawa
发明人： Yoshinori KITAMURA , Koichi Matsuno , Kazunori Nishikawa
IPC分类号： H01L29/00
CPC分类号： H01L29/7881 , H01L21/76224 , H01L27/105 , H01L27/11526 , H01L27/11541 , H01L29/66825
摘要： A semiconductor device includes a semiconductor substrate formed with a plurality of first element isolation trenches having respective first opening widths and a plurality of second element isolation trenches having larger opening widths than the first opening widths, element isolation insulating films buried in the first element isolation trenches so that upper parts of the trenches have partial openings, respectively and buried in the second element isolation trenches respectively, and coating type oxide films formed so as to fill the openings of the first element isolation trenches, respectively.
摘要翻译：一种半导体器件包括形成有多个具有第一开口宽度的第一元件隔离沟槽和具有比第一开口宽度更大的开口宽度的多个第二元件隔离沟槽的半导体衬底，埋在第一元件隔离沟槽中的元件隔离绝缘膜使得沟槽的上部分别具有部分开口并分别埋在第二元件隔离沟槽中，并且分别形成为填充第一元件隔离沟槽的开口的涂覆型氧化物膜。

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