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1. 发明授权

US09003016B2 Information processing apparatus, information processing method, and program 有权
标题翻译：信息处理装置，信息处理方法和程序
公开(公告)号：US09003016B2
公开(公告)日：2015-04-07
申请号：US13116925
申请日：2011-05-26
申请人： Norifumi Kikkawa , Kei Yamashita , Yoshihiko Ikenaga , Yuichi Izumi , Shinji Takae
发明人： Norifumi Kikkawa , Kei Yamashita , Yoshihiko Ikenaga , Yuichi Izumi , Shinji Takae
IPC分类号： G06F15/173 , G06F15/16 , H04L12/28
CPC分类号： H04L12/2809 , H04L12/281 , H04L12/2812
摘要： An apparatus and method provide logic for formatting electronic content. In one implementation, an apparatus includes an identification unit configured to identify a plurality of devices associated via a network, and a receiving unit configured to receive information corresponding to the associated devices. The information includes a function provided by the associated devices and performance data corresponding to the associated devices. A generation unit is configured to generate a first value of an execution metric describing at least one of an execution of the function by the associated devices or the performance data corresponding to the associated devices, based on at least the received information, and an output unit is configured to output the first metric value.
摘要翻译：一种装置和方法提供用于格式化电子内容的逻辑。在一个实现中，一种装置包括：识别单元，被配置为识别经由网络相关联的多个设备;以及接收单元，被配置为接收与相关联的设备相对应的信息。信息包括由相关设备提供的功能和对应于相关设备的性能数据。生成单元被配置为基于至少所接收的信息来生成描述由相关联的设备执行功能的至少一个或与相关联的设备相对应的演奏数据的执行度量的第一值，以及输出单元被配置为输出第一度量值。

2. 发明申请

US20070091965A1 VERTICAL-CAVITY SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE 有权
标题翻译：垂直表面发射半导体激光器件
公开(公告)号：US20070091965A1
公开(公告)日：2007-04-26
申请号：US11551101
申请日：2006-10-19
申请人： Kinuka Tanabe , Yoshihiko Ikenaga , Norihiro Iwai , Takeo Kageyama , Koji Hiraiwa , Hirokazu Yoshikawa
发明人： Kinuka Tanabe , Yoshihiko Ikenaga , Norihiro Iwai , Takeo Kageyama , Koji Hiraiwa , Hirokazu Yoshikawa
IPC分类号： H01S5/00
CPC分类号： H01S5/1835 , H01S5/0425 , H01S5/18311 , H01S5/18338 , H01S5/18341 , H01S5/18369 , H01S5/3202
摘要： A vertical-cavity surface-emitting (VCSEL) device has a layer structure including a top DBR mirror, an active layer, a current confinement oxide layer, and a bottom DBR mirror, the layer structure being configured as a mesa post. The current confinement oxide layer has a central current injection area and a peripheral current blocking area oxidized from the sidewall of the mesa post. The mesa post has a substantially square cross-sectional shape, thereby allowing an oxidation heat treatment to configure a substantially circular current injection area in the current-confinement oxide layer.
摘要翻译：垂直腔表面发射（VCSEL）器件具有包括顶部DBR镜，有源层，电流限制氧化物层和底部DBR镜的层结构，该层结构被配置为台面柱。电流限制氧化物层具有从台面柱的侧壁氧化的中心电流注入区域和外围电流阻挡区域。台面柱具有基本上正方形的横截面形状，从而允许氧化热处理以在电流限制氧化物层中构造基本上圆形的电流注入区域。

3. 发明授权

US08447878B2 Receiving apparatus, transmitting apparatus, communication system, and method of detecting buffer setting of relay server 失效
标题翻译：接收装置，发送装置，通信系统以及中继服务器的缓冲设置检测方法
公开(公告)号：US08447878B2
公开(公告)日：2013-05-21
申请号：US12409450
申请日：2009-03-23
申请人： Seiji Miyama , Yoshihiko Ikenaga
发明人： Seiji Miyama , Yoshihiko Ikenaga
IPC分类号： G06F15/16
CPC分类号： H04L49/90
摘要： A receiving apparatus of the present invention includes: a relayed dummy data receiving unit for receiving relayed dummy data including dummy data of n bytes (n≧1) and/or dummy data of N bytes (N≧n) sequentially and repetitively transmitted from a transmitting apparatus to a relay server from the relay server; and a buffer setting detecting unit for detecting a buffer setting of the relay server based on a first size value indicative of data size of relayed dummy data received for the first time by the relayed dummy data receiving unit and a second size value indicative of not larger data size of relayed dummy data received for the second time and relayed dummy data received for the third time.
摘要翻译：本发明的接收装置包括：中继伪数据接收单元，用于顺序地重复发送包括n字节（n> = 1）的伪数据和/或N字节（N> = n）的伪数据的中继伪数据从中继服务器从发送装置到中继服务器; 以及缓冲设置检测单元，用于基于指示由中继的伪数据接收单元首次接收到的中继伪数据的数据大小的第一大小值，以及指示不大的第二大小值来检测中继服务器的缓冲器设置第二次接收到的中继伪数据的数据大小和第三次接收的中继伪数据。

4. 发明申请

US20110302300A1 INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND PROGRAM 有权
标题翻译：信息处理设备，信息处理方法和程序
公开(公告)号：US20110302300A1
公开(公告)日：2011-12-08
申请号：US13116925
申请日：2011-05-26
申请人： Norifumi KIKKAWA , Kei Yamashita , Yoshihiko Ikenaga , Yuichi Izumi , Shinji Takae
发明人： Norifumi KIKKAWA , Kei Yamashita , Yoshihiko Ikenaga , Yuichi Izumi , Shinji Takae
IPC分类号： G06F15/16
CPC分类号： H04L12/2809 , H04L12/281 , H04L12/2812
摘要： An apparatus and method provide logic for formatting electronic content. In one implementation, an apparatus includes an identification unit configured to identify a plurality of devices associated via a network, and a receiving unit configured to receive information corresponding to the associated devices. The information includes a function provided by the associated devices and performance data corresponding to the associated devices. A generation unit is configured to generate a first value of an execution metric describing at least one of an execution of the function by the associated devices or the performance data corresponding to the associated devices, based on at least the received information, and an output unit is configured to output the first metric value.
摘要翻译：一种装置和方法提供用于格式化电子内容的逻辑。在一个实现中，一种装置包括：识别单元，被配置为识别经由网络相关联的多个设备;以及接收单元，被配置为接收与相关联的设备相对应的信息。信息包括由相关设备提供的功能和对应于相关设备的性能数据。生成单元被配置为基于至少所接收的信息来生成描述由相关联的设备执行功能的至少一个或与相关联的设备相对应的演奏数据的执行度量的第一值，以及输出单元被配置为输出第一度量值。

5. 发明申请

US20110076854A1 METHOD OF MANUFACTURING VERTICAL-CAVITY SURFACE EMITTING LASER 有权
标题翻译：制造垂直表面发射激光的方法
公开(公告)号：US20110076854A1
公开(公告)日：2011-03-31
申请号：US12570834
申请日：2009-09-30
申请人： Kageyama Takeo , Norihiro Iwai , Koji Hiraiwa , Yoshihiko Ikenaga
发明人： Kageyama Takeo , Norihiro Iwai , Koji Hiraiwa , Yoshihiko Ikenaga
IPC分类号： H01L21/302
CPC分类号： H01S5/18316 , H01S5/18313 , H01S5/18327 , H01S5/32366
摘要： According to a method of manufacturing a vertical-cavity surface-emitting semiconductor laser element in accordance with the present invention, a process of wet etching is performed for a part that is oxidized in a layer of an AlGaAs (42) which configures a layer having an index of refraction as lower and in which a composition of aluminum is designed to be as higher comparing to the other pairs of layers in a DBR mirror at an upper side that are formed at an inner side of a mesa post (38). And then a process of filling up again is performed with making use of a layer of polyimide (26). Moreover, an etchant that includes such as a hydrofluoric acid or a buffered hydrofluoric acid or an aqueous ammonia or the like is made use in order to perform such the process of wet etching.
摘要翻译：根据本发明的垂直腔表面发射半导体激光元件的制造方法，对在AlGaAs（42）的层中被氧化的部分进行湿式蚀刻处理，该AlGaAs构成具有折射率较低，并且其中铝的组成被设计为与形成在台面柱（38）的内侧处的上侧的DBR反射镜中的其它成对层相比更高。然后使用聚酰亚胺层（26）进行再次填充的过程。此外，为了进行这种湿蚀刻工艺，使用包括例如氢氟酸或缓冲氢氟酸或氨水等的蚀刻剂。

6. 发明授权

US07885307B2 Vertical-cavity surface-emitting semiconductor laser device 有权
标题翻译：垂直腔表面发射半导体激光器件
公开(公告)号：US07885307B2
公开(公告)日：2011-02-08
申请号：US11551101
申请日：2006-10-19
申请人： Kinuka Tanabe , Yoshihiko Ikenaga , Norihiro Iwai , Takeo Kageyama , Koji Hiraiwa , Hirokazu Yoshikawa
发明人： Kinuka Tanabe , Yoshihiko Ikenaga , Norihiro Iwai , Takeo Kageyama , Koji Hiraiwa , Hirokazu Yoshikawa
IPC分类号： H01S5/00
CPC分类号： H01S5/1835 , H01S5/0425 , H01S5/18311 , H01S5/18338 , H01S5/18341 , H01S5/18369 , H01S5/3202
摘要： A vertical-cavity surface-emitting (VCSEL) device has a layer structure including a top DBR mirror, an active layer, a current confinement oxide layer, and a bottom DBR mirror, the layer structure being configured as a mesa post. The current confinement oxide layer has a central current injection area and a peripheral current blocking area oxidized from the sidewall of the mesa post. The mesa post has a substantially square cross-sectional shape, thereby allowing an oxidation heat treatment to configure a substantially circular current injection area in the current-confinement oxide layer.
摘要翻译：垂直腔表面发射（VCSEL）器件具有包括顶部DBR镜，有源层，电流限制氧化物层和底部DBR镜的层结构，该层结构被配置为台面柱。电流限制氧化物层具有从台面柱的侧壁氧化的中心电流注入区域和外围电流阻挡区域。台面柱具有基本上正方形的横截面形状，从而允许氧化热处理在电流限制氧化物层中构造基本上圆形的电流注入区域。

7. 发明申请

US20090240832A1 RECEIVING APPARATUS, TRANSMITTING APPARATUS, COMMUNICATION SYSTEM, AND METHOD OF DETECTING BUFFER SETTING OF RELAY SERVER 失效
标题翻译：接收装置，发送装置，通信系统和检测继电器服务器缓冲器设置的方法
公开(公告)号：US20090240832A1
公开(公告)日：2009-09-24
申请号：US12409450
申请日：2009-03-23
申请人： Seiji Miyama , Yoshihiko Ikenaga
发明人： Seiji Miyama , Yoshihiko Ikenaga
IPC分类号： G06F15/16
CPC分类号： H04L49/90
摘要： A receiving apparatus of the present invention includes: a relayed dummy data receiving unit for receiving relayed dummy data including dummy data of n bytes (n≧1) and/or dummy data of N bytes (N≧n) sequentially and repetitively transmitted from a transmitting apparatus to a relay server from the relay server; and a buffer setting detecting unit for detecting a buffer setting of the relay server based on a first size value indicative of data size of relayed dummy data received for the first time by the relayed dummy data receiving unit and a second size value indicative of not larger data size of relayed dummy data received for the second time and relayed dummy data received for the third time.
摘要翻译：本发明的接收装置包括：中继伪数据接收单元，用于顺序地重复发送包括n字节（n> = 1）的伪数据和/或N字节（N> = n）的伪数据的中继伪数据从中继服务器从发送装置到中继服务器; 以及缓冲设置检测单元，用于基于指示由中继的伪数据接收单元首次接收到的中继伪数据的数据大小的第一大小值，以及指示不大的第二大小值来检测中继服务器的缓冲器设置第二次接收到的中继伪数据的数据大小和第三次接收的中继伪数据。

8. 发明授权

US08409998B2 Method of manufacturing vertical-cavity surface emitting laser 有权
标题翻译：垂直腔表面发射激光器的制造方法
公开(公告)号：US08409998B2
公开(公告)日：2013-04-02
申请号：US12570834
申请日：2009-09-30
申请人： Kageyama Takeo , Norihiro Iwai , Koji Hiraiwa , Yoshihiko Ikenaga
发明人： Kageyama Takeo , Norihiro Iwai , Koji Hiraiwa , Yoshihiko Ikenaga
IPC分类号： H01L21/302
CPC分类号： H01S5/18316 , H01S5/18313 , H01S5/18327 , H01S5/32366
摘要： According to a method of manufacturing a vertical-cavity surface-emitting semiconductor laser element in accordance with the present invention, a process of wet etching is performed for a part that is oxidized in a layer of an AlGaAs (42) which configures a layer having an index of refraction as lower and in which a composition of aluminum is designed to be as higher comparing to the other pairs of layers in a DBR mirror at an upper side that are formed at an inner side of a mesa post (38). And then a process of filling up again is performed with making use of a layer of polyimide (26). Moreover, an etchant that includes such as a hydrofluoric acid or a buffered hydrofluoric acid or an aqueous ammonia or the like is made use in order to perform such the process of wet etching.
摘要翻译：根据本发明的垂直腔表面发射半导体激光元件的制造方法，对在AlGaAs（42）的层中被氧化的部分进行湿式蚀刻处理，该AlGaAs构成具有折射率较低，并且其中铝的组成被设计为与形成在台面柱（38）的内侧处的上侧的DBR反射镜中的其它成对层相比更高。然后使用聚酰亚胺层（26）进行再次填充的过程。此外，为了进行这种湿蚀刻工艺，使用包括例如氢氟酸或缓冲氢氟酸或氨水等的蚀刻剂。

9. 发明申请

US20070153856A1 SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20070153856A1
公开(公告)日：2007-07-05
申请号：US11611500
申请日：2006-12-15
申请人： Takeo KAGEYAMA , Yoshihiko Ikenaga
发明人： Takeo KAGEYAMA , Yoshihiko Ikenaga
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/18311 , H01S5/2004 , H01S5/2009 , H01S5/3211 , H01S5/3415 , H01S5/34306
摘要： An active layer is formed by arranging a plurality of quantum-well layers and a plurality of barrier layers alternatively. An amount of band discontinuity in a conduction band between a barrier layer that is sandwiched by the quantum-well layers and adjacent quantum-well layers is equal to or more than 26 meV and less than 300 meV, so that an overflow of injected carriers due to a thermal excitation between the quantum-well layers is intentionally caused to make the carrier density uniform between the quantum-well layers.
摘要翻译：通过交替地布置多个量子阱层和多个势垒层来形成有源层。夹在量子阱层和相邻量子阱层之间的阻挡层之间的导带中的带间的数量等于或大于26meV且小于300meV，从而使注入的载流子溢出有意地引起量子阱层之间的热激发使得量子阱层之间的载流子密度均匀。

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