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    • 4. 发明申请
    • Wafer guides for processing semiconductor substrates
    • 用于处理半导体衬底的晶片导板
    • US20060027513A1
    • 2006-02-09
    • US11234033
    • 2005-09-24
    • Pil-Kwon JunSang-oh ParkYong-Kyun KoHun-Jung Yi
    • Pil-Kwon JunSang-oh ParkYong-Kyun KoHun-Jung Yi
    • A47G19/08
    • H01L21/67326B65D25/103H01L21/67057Y10S134/902
    • A wafer guide used in cleaning and/or drying processes of semiconductor wafers is provided. The wafer guide includes a horizontal support panel and at least three vertical panels attached on one surface of the support panel. Each of the vertical panels has a vertical body panel and a plurality of protrusions upwardly extended from a top surface of the vertical body panel. Gap regions between the protrusions act as slots for holding wafers. Sidewalls of the slots have a convex shaped profile when viewed from a top view, and bottom surfaces of the slots also have a convex shaped profile when viewed from a cross sectional view that crosses the vertical panels. Accordingly, contact areas between the wafers and the wafer guide are reduced to improve a drying efficiency of the wafers.
    • 提供了用于半导体晶片的清洁和/或干燥处理的晶片引导件。 晶片引导件包括水平支撑面板和至少三个垂直面板,其附接在支撑面板的一个表面上。 每个垂直面板具有垂直的主体面板和从垂直主体面板的顶面向上延伸的多个突起。 突起之间的间隙区域用作保持晶片的槽。 当从顶视图观察时,槽的侧壁具有凸形的轮廓,并且当从横切垂直板的横截面视图观察时,槽的底表面也具有凸形轮廓。 因此,晶片和晶片引导件之间的接触面积减小,以提高晶片的干燥效率。
    • 5. 发明授权
    • Chemical refining method and reuse system for semiconductor device
manufacturing
    • 半导体器件制造的化学精炼方法和再利用系统
    • US6137018A
    • 2000-10-24
    • US115827
    • 1998-07-15
    • Yong-kyun KoJune-ing GilSang-mun Chon
    • Yong-kyun KoJune-ing GilSang-mun Chon
    • B01D15/04B01D12/00C07B63/00C07B63/02C07C29/76H01L21/304C07C29/74
    • C07C29/76
    • A chemical refining and reuse method and apparatus efficiently remove water from a waste chemical used in a semiconductor device fabrication process. The method is superior to conventional refining methods, in that water is removed at the end of the refining process, followed only by particle removal, so that water is not reintroduced into the waste chemical during metallic impurity removal. Therefore, the refined waste chemical has a percentage of water therein which is equal to that of the chemical in an initial raw state. The method includes: a) removing ionic impurities contained in the waste chemical; b) removing metallic impurities contained in the waste chemical after removing the ionic impurities; c) removing water contained in the waste chemical after removing the metallic impurities; and d) removing particles contained in the waste chemical after removing the water.
    • 化学精炼和再利用方法和设备有效地从用于半导体器件制造过程的废化学品中除去水。 该方法优于常规精炼方法,因为在精炼过程结束时除去水,其后仅通过除去颗粒,使得在金属杂质去除期间水不再被引入废化学品中。 因此,精炼废弃化学品中的水的百分比等于初始原始状态下的化学物质。 该方法包括:a)除去废化学物中所含的离子杂质; b)去除离子杂质后除去废化学物中所含的金属杂质; c)除去金属杂质后,除去废物中含有的水; 以及d)去除水后除去废化学物中所含的颗粒。
    • 10. 发明授权
    • Valve cleaning method
    • 阀门清洗方法
    • US6149731A
    • 2000-11-21
    • US172139
    • 1998-10-14
    • Yong-kyun Ko
    • Yong-kyun Ko
    • B08B9/027B08B9/00H01L21/304C23G1/02
    • B08B9/00Y10T137/4259Y10T436/25375
    • A valve cleaning apparatus and method provide for cleaning of heat resistant, scratch resistant coated valves using deionized water and at least one chemical mixture. The cleaning method includes sampling and analysis of the chemical mixture for the presence of metal impurities to within 0.5 to 1.5 ppb. Valves cleaned using this method and apparatus can then be transferred for use in semiconductor device fabrication equipment without the danger of metal impurities from the valves entering and damaging the fabrication equipment and the semiconductor devices being fabricated. The apparatus uses a single pumping device and a single return line, which are provided with selection devices to alternatively supply to or return from the valves either the deionized water or the chemical mixture. A plurality of same-sized or different-sized valves can be cleaned simultaneously.
    • 阀清洁装置和方法提供使用去离子水和至少一种化学混合物清洁耐热,耐划伤涂层的阀。 清洁方法包括将金属杂质的存在的化学混合物取样和分析至0.5至1.5ppb。 然后可以将使用这种方法和设备清洗的阀门转移到半导体器件制造设备中,而不会有来自阀门进入和损坏制造设备和所制造的半导体器件的金属杂质的危险。 该设备使用单个泵送装置和单个返回管线,其具有选择装置,以交替地向阀提供去离子水或化学混合物。 可以同时清洁多个相同尺寸或​​不同尺寸的阀。