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1. 发明授权

US07868550B2 Protective layer material for PDP and method of manufacturing the same 有权
标题翻译： PDP的保护层材料及其制造方法
公开(公告)号：US07868550B2
公开(公告)日：2011-01-11
申请号：US11707596
申请日：2007-02-16
申请人： Jeong Seok Kim , Seok Jung , You Han Kim , Jin Ho Pyo , Yong Seog Kim , Kyung Hyun Park
发明人： Jeong Seok Kim , Seok Jung , You Han Kim , Jin Ho Pyo , Yong Seog Kim , Kyung Hyun Park
IPC分类号： H01J17/49
CPC分类号： C04B35/043 , C04B35/03 , C04B2235/3205 , C04B2235/3208 , C04B2235/3217 , C04B2235/3224 , C04B2235/3231 , C04B2235/3256 , C04B2235/3294 , C23C14/081 , H01J9/02 , H01J11/12 , H01J11/40
摘要： An MgO protective layer formed on a front substrate of a plasma display panel and a method of manufacturing the protective layer are disclosed. The protective layer is manufactured by using an MgO pellet, which is simultaneously doped with a first doping material of BeO and/or CaO among alkali earth metals and a second material selected from the group consisting of Sc2O3, Sb2O3, Er2O3, Mo2O3, and Al2O3, as a deposition source through a vacuum deposition method. The protective layer remarkably improves a discharge efficiency of the PDP and shortens a discharge delay time, so that it is applied to a signal can PDP. Also, it lowers a manufacturing cost by reducing the number of electronic components.
摘要翻译：公开了一种形成在等离子体显示面板的前基板上的MgO保护层和制造该保护层的方法。保护层通过使用MgO颗粒制造，MgO颗粒同时掺杂有碱土金属中的BeO和/或CaO的第一掺杂材料和选自Sc 2 O 3，Sb 2 O 3，Er 2 O 3，Mo 2 O 3和Al 2 O 3的第二材料，作为通过真空沉积方法的沉积源。保护层显着提高了PDP的放电效率，缩短了放电延迟时间，使其适用于信号罐PDP。而且，通过减少电子部件的数量来降低制造成本。

2. 发明申请

US20080129200A1 PLASMA DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：等离子显示面板及其制造方法
公开(公告)号：US20080129200A1
公开(公告)日：2008-06-05
申请号：US11947333
申请日：2007-11-29
申请人： Dong-Hyun Kang , Jong-Seo Choi , Yong-Seog Kim , Min-Su Co
发明人： Dong-Hyun Kang , Jong-Seo Choi , Yong-Seog Kim , Min-Su Co
IPC分类号： H01J17/49 , H01J9/02
CPC分类号： H01J11/40 , H01J9/02 , H01J11/12
摘要： A plasma display panel and a method of making thereof such that the plasma display panel includes a first substrate and a second substrate arranged opposite to each other; a plurality of address electrodes disposed on the first substrate; a dielectric layer disposed to cover the address electrodes disposed on the first substrate; a plurality of display electrodes disposed to cross the address electrodes on a second substrate; an inorganic oxide layer disposed to cover the display electrodes; an MgO protective layer disposed to cover the inorganic oxide layer; barrier ribs disposed between the first substrate and the second substrate to define a plurality of discharge cells; and phosphor layers disposed in the discharge cells.
摘要翻译：一种等离子体显示面板及其制造方法，使得等离子体显示面板包括彼此相对布置的第一基板和第二基板; 设置在所述第一基板上的多个寻址电极; 设置为覆盖设置在第一基板上的寻址电极的电介质层; 多个显示电极，设置成跨越第二基板上的寻址电极; 设置成覆盖所述显示电极的无机氧化物层; 设置为覆盖无机氧化物层的MgO保护层; 阻挡肋，设置在所述第一基板和所述第二基板之间，以限定多个放电单元; 以及设置在放电单元中的荧光体层。

3. 发明申请

US20070080639A1 Flat display panel and its method of manufacture 审中-公开
标题翻译：平板显示面板及其制造方法
公开(公告)号：US20070080639A1
公开(公告)日：2007-04-12
申请号：US11529776
申请日：2006-09-29
申请人： Hyea-Weon Shin , Yong-Seog Kim
发明人： Hyea-Weon Shin , Yong-Seog Kim
IPC分类号： H01J17/49
CPC分类号： H01J11/40 , B82Y10/00 , H01J9/241 , H01J11/12 , H01J11/38
摘要： The flat display of the present invention includes a first substrate and a second substrate arranged opposite to each other, barrier ribs that are disposed in a space between the first substrate and the second substrate and that divide a discharge space to define partitioned discharge spaces, a phosphor layer disposed inside the partitioned discharge spaces, address electrodes disposed on the second substrate in one direction, a second dielectric layer disposed to cover the address electrodes on the second substrate, at least a pair of display electrodes that are disposed on the first substrate in a direction crossing the address electrodes and arranged opposite to each other in each partitioned discharge space, and a first dielectric layer disposed to cover the display electrodes on the first substrate. A carbon-based material is disposed to extend from first dielectric layer toward the discharge space.
摘要翻译：本发明的平面显示器包括彼此相对布置的第一基板和第二基板，隔壁设置在第一基板和第二基板之间的空间中，并且分隔放电空间以限定分隔的排出空间，荧光体层，设置在分隔的放电空间内，在一个方向上设置在第二基板上的寻址电极，设置成覆盖第二基板上的寻址电极的第二介电层，至少一对显示电极，设置在第一基板上在每个分隔放电空间中与所述寻址电极交叉并且彼此相对布置的方向，以及设置成覆盖所述第一基板上的显示电极的第一电介质层。碳基材料设置成从第一介电层朝向放电空间延伸。

4. 发明申请

US20080085375A1 Protective layer material for PDP and method of manufacturing the same 有权
标题翻译： PDP的保护层材料及其制造方法
公开(公告)号：US20080085375A1
公开(公告)日：2008-04-10
申请号：US11707596
申请日：2007-02-16
申请人： Jeong Seok Kim , Seok Jung , You Han Kim , Jin Ho Pyo , Yong Seog Kim , Kyung Hyun Park
发明人： Jeong Seok Kim , Seok Jung , You Han Kim , Jin Ho Pyo , Yong Seog Kim , Kyung Hyun Park
IPC分类号： C23C24/00 , C04B28/36 , C23C16/40
CPC分类号： C04B35/043 , C04B35/03 , C04B2235/3205 , C04B2235/3208 , C04B2235/3217 , C04B2235/3224 , C04B2235/3231 , C04B2235/3256 , C04B2235/3294 , C23C14/081 , H01J9/02 , H01J11/12 , H01J11/40
摘要： An MgO protective layer formed on a front substrate of a plasma display panel and a method of manufacturing the protective layer are disclosed. The protective layer is manufactured by using an MgO pellet, which is simultaneously doped with a first doping material of BeO and/or CaO among alkali earth metals and a second material selected from the group consisting of Sc2O3, Sb2O3, Er2O3, Mo2O3, and Al2O3, as a deposition source through a vacuum deposition method. The protective layer remarkably improves a discharge efficiency of the PDP and shortens a discharge delay time, so that it is applied to a signal can PDP. Also, it lowers a manufacturing cost by reducing the number of electronic components.
摘要翻译：公开了一种形成在等离子体显示面板的前基板上的MgO保护层和制造该保护层的方法。保护层通过使用MgO颗粒制造，MgO颗粒同时掺杂有碱土金属中的BeO和/或CaO的第一掺杂材料和选自Sc 2 O 2的第二材料 3 3，Sb 2 O 3，O 2 O 3，Mo

5. 发明授权

US07264526B2 Method of manufacturing barrier ribs for PDP by capillary molding of paste and paste compositions therefor 失效
标题翻译：通过毛细管成型用于其的浆料和糊料组合物来制造用于PDP的隔壁的方法
公开(公告)号：US07264526B2
公开(公告)日：2007-09-04
申请号：US10521196
申请日：2003-07-15
申请人： Yong Seog Kim , Yong Ho Kim , Sung Won Cho
发明人： Yong Seog Kim , Yong Ho Kim , Sung Won Cho
IPC分类号： H01J9/00 , H01J9/24
CPC分类号： H01J9/242 , H01J11/12 , H01J11/36
摘要： Disclosed is a method of manufacturing rear plate barrier ribs for Plasma Display Panel (PDP), which includes the steps of: forming barrier ribs by infiltrating the barrier rib forming paste into grooves of a mold by using the capillary phenomenon, and then sintering the paste. This method causes rare environmental pollution, enables to make barrier ribs having fine and complex shapes and reduces material costs required for the barrier rib. Thus, the method may improve quality of PDP and reduce manufacture costs of the rear plate.
摘要翻译：公开了一种制造等离子体显示面板（PDP）的后板阻挡肋的方法，其包括以下步骤：通过使用毛细管现象将隔壁形成膏渗透到模具的凹槽中，然后烧结浆料。这种方法造成罕见的环境污染，能够形成具有精细和复杂形状的隔肋，并且减少隔壁所需的材料成本。因此，该方法可以提高PDP的质量并降低后板的制造成本。

6. 发明授权

US08030838B2 Organic light emitting display apparatus 有权
标题翻译：有机发光显示装置
公开(公告)号：US08030838B2
公开(公告)日：2011-10-04
申请号：US12288938
申请日：2008-10-23
申请人： Won-Kyu Kwak , Yong-Seog Kim
发明人： Won-Kyu Kwak , Yong-Seog Kim
IPC分类号： H01L51/52 , H01L51/50
CPC分类号： H01L27/3279 , H01L27/3246 , H01L2924/0002 , H01L2924/00
摘要： An organic light emitting display apparatus that can prevent corrosion during manufacturing is disclosed. The apparatus can have a remarkably enhanced yield. The apparatus includes: a substrate having a display area, a thin film transistor disposed inside the display area, an electrode power supply line disposed outside the display area, a pixel electrode disposed inside the display area of the substrate and electrically connected to the thin film transistor, an auxiliary conductive layer contacting the electrode power supply line at a side of the electrode power supply line, a pixel defining layer exposing the pixel electrode covering the auxiliary conductive layer and exposing the electrode power supply line. The apparatus also includes an intermediate layer disposed on the pixel electrode and comprising an emitting layer, and a counter electrode disposed on the intermediate layer and extending outside the display area of the substrate to contact the electrode power supply line.
摘要翻译：公开了一种能够防止制造时的腐蚀的有机发光显示装置。该装置可以显着提高产量。该装置包括：具有显示区域的基板，设置在显示区域内的薄膜晶体管，设置在显示区域外部的电极电源线，设置在基板的显示区域内并电连接到薄膜的像素电极晶体管，与电极电源线一侧的电极电源线接触的辅助导电层，使覆盖辅助导电层的像素电极曝光并露出电极电源线的像素限定层。该装置还包括设置在像素电极上并包括发光层的中间层和设置在中间层上并延伸到基板的显示区域外部以与电极电源线接触的对置电极。

7. 发明申请

US20070046212A1 Flat panel display device and manufacturing method thereof 审中-公开
标题翻译：平板显示装置及其制造方法
公开(公告)号：US20070046212A1
公开(公告)日：2007-03-01
申请号：US11513865
申请日：2006-08-30
申请人： Hyea-Weon Shin , Yong-Seog Kim
发明人： Hyea-Weon Shin , Yong-Seog Kim
IPC分类号： H01J17/49
CPC分类号： H01J11/40 , H01J9/02 , H01J11/12 , H01J11/38
摘要： The flat panel display device of the present invention includes first and second substrates arranged opposite to each other; barrier ribs disposed between the first and second substrates; a phosphor layer disposed in a discharge space; address electrodes disposed on the second substrate along one direction; a second dielectric layer covering the address electrodes on the second substrate; at least a pair of display electrodes disposed on the first substrate in a direction crossing the address electrodes and arranged opposite to each other in the discharge space; and a first dielectric layer covering the display electrodes on the first substrate. Herein, an electron amplification layer including an electron amplifying material selected from the group consisting of ZnO, Al2O3, SiC, diamond, and combinations thereof is disposed on the first dielectric layer, and the electron amplifying material has a nanorod shape grown toward the discharge space.
摘要翻译：本发明的平板显示装置包括彼此相对布置的第一和第二基板; 设置在第一和第二基板之间的阻挡肋; 设置在放电空间中的荧光体层; 沿着一个方向设置在第二基板上的寻址电极; 覆盖所述第二基板上的寻址电极的第二电介质层; 至少一对显示电极，其在与所述寻址电极交叉的方向上设置在所述第一基板上，并且在所述放电空间中彼此相对布置; 以及覆盖第一基板上的显示电极的第一电介质层。这里，包括从ZnO，Al 2 O 3 3，SiC，金刚石及其组合中选出的电子放大材料的电子放电层设置在第一电介质层，并且电子放大材料具有朝向放电空间生长的纳米棒形状。

8. 发明授权

US07696030B2 Method of fabricating semiconductor device and semiconductor fabricated by the same method 有权
标题翻译：通过相同的方法制造半导体器件和半导体的方法
公开(公告)号：US07696030B2
公开(公告)日：2010-04-13
申请号：US11082982
申请日：2005-03-18
申请人： Ramesh Kakkad , Yong-Seog Kim
发明人： Ramesh Kakkad , Yong-Seog Kim
IPC分类号： H01L21/20
CPC分类号： H01L29/66765 , H01L29/66757
摘要： A method of fabricating a semiconductor device and a semiconductor device fabricated by the same method are disclosed. The method includes: depositing a silicon layer containing amorphous silicon on a substrate using any one of a plasma enhanced chemical vapor deposition (PECVD) method and a low pressure chemical vapor deposition (LPCVD) method; annealing the silicon layer in an H2O atmosphere at a certain temperature to form a polycrystalline silicon layer; forming a gate insulating layer on the polycrystalline silicon layer; forming impurity regions in the polycrystalline silicon layer to define source and drain regions; and activating the impurity regions. Thus, it is possible to provide a semiconductor device, in which the substrate is prevented from being bent and polycrystalline silicon constituting a semiconductor layer is excellent.
摘要翻译：公开了一种通过相同方法制造半导体器件和半导体器件的方法。该方法包括：使用等离子体增强化学气相沉积（PECVD）法和低压化学气相沉积（LPCVD）法中的任何一种，在衬底上沉积含有非晶硅的硅层; 在一定温度下在H 2 O气氛中退火硅层以形成多晶硅层; 在所述多晶硅层上形成栅极绝缘层; 在所述多晶硅层中形成杂质区以限定源区和漏区; 并激活杂质区域。因此，可以提供一种防止基板弯曲的半导体器件，并且构成半导体层的多晶硅是优异的。

9. 发明授权

US07544550B2 Method of fabricating semiconductor device and semiconductor fabricated by the same method 有权
标题翻译：通过相同的方法制造半导体器件和半导体的方法
公开(公告)号：US07544550B2
公开(公告)日：2009-06-09
申请号：US11083203
申请日：2005-03-18
申请人： Ramesh Kakkad , Yong-Seog Kim
发明人： Ramesh Kakkad , Yong-Seog Kim
IPC分类号： H01L21/20 , H01L21/335
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/02595 , H01L21/2022 , H01L29/66757 , H01L29/66765
摘要： A semiconductor device and method of fabricating the same are provided. The method includes: depositing a silicon layer containing amorphous silicon on a substrate; defining source and drain regions by doping the silicon layer with impurity ions; crystallizing the amorphous silicon by an annealing process under an atmosphere of H2O at a predetermined temperature, and at the same time activating the impurity ions to form a semiconductor layer; forming a gate insulating layer over the entire surface of the substrate having the semiconductor layer; and forming a gate electrode on the gate insulating layer in correspondence with a channel region of the semiconductor layer, in which the annealing process is simplified by crystallizing the polycrystalline silicon and at the same time activating the impurity ions, thereby preventing the substrate from being deformed due to high temperature during the annealing process.
摘要翻译：提供了半导体器件及其制造方法。该方法包括：在衬底上沉积含有非晶硅的硅层; 通过用杂质离子掺杂硅层来限定源区和漏区; 在H 2 O气氛下，在预定温度下通过退火工艺使非晶硅结晶，同时激活杂质离子以形成半导体层; 在具有半导体层的衬底的整个表面上形成栅极绝缘层; 以及在所述栅极绝缘层上形成与所述半导体层的沟道区相对应的栅电极，其中所述退火处理通过使所述多晶硅结晶而被简化，并且同时激活所述杂质离子，从而防止所述衬底变形由于退火过程中的高温。

10. 发明申请

US20060003502A1 Method of fabricating semiconductor device and semiconductor fabricated by the same method 有权
标题翻译：通过相同的方法制造半导体器件和半导体的方法
公开(公告)号：US20060003502A1
公开(公告)日：2006-01-05
申请号：US11083203
申请日：2005-03-18
申请人： Ramesh Kakkad , Yong-Seog Kim
发明人： Ramesh Kakkad , Yong-Seog Kim
IPC分类号： H01L21/00 , H01L21/20
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/02595 , H01L21/2022 , H01L29/66757 , H01L29/66765
摘要： A semiconductor device and method of fabricating the same are provided. The method includes: depositing a silicon layer containing amorphous silicon on a substrate; defining source and drain regions by doping the silicon layer with impurity ions; crystallizing the amorphous silicon by an annealing process under an atmosphere of H2O at a predetermined temperature, and at the same time activating the impurity ions to form a semiconductor layer; forming a gate insulating layer over the entire surface of the substrate having the semiconductor layer; and forming a gate electrode on the gate insulating layer in correspondence with a channel region of the semiconductor layer, in which the annealing process is simplified by crystallizing the polycrystalline silicon and at the same time activating the impurity ions, thereby preventing the substrate from being deformed due to high temperature during the annealing process.
摘要翻译：提供了半导体器件及其制造方法。该方法包括：在衬底上沉积含有非晶硅的硅层; 通过用杂质离子掺杂硅层来限定源区和漏区; 在H 2 O 2气氛下通过退火工艺在预定温度下使非晶硅结晶，同时激活杂质离子以形成半导体层; 在具有半导体层的衬底的整个表面上形成栅极绝缘层; 以及在所述栅极绝缘层上形成与所述半导体层的沟道区相对应的栅电极，其中所述退火处理通过使所述多晶硅结晶而被简化，并且同时激活所述杂质离子，从而防止所述衬底变形由于退火过程中的高温。

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