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    • 4. 发明授权
    • Semiconductor integrated circuit device having field shield MOS devices
    • 具有场屏蔽MOS器件的半导体集成电路器件
    • US6144080A
    • 2000-11-07
    • US639750
    • 1996-04-29
    • Toshio WadaYoji Hata
    • Toshio WadaYoji Hata
    • H01L21/76H01L21/765H01L21/8242H01L27/092H01L27/108H01L29/76H01L29/94H01L31/062H01L31/113
    • H01L27/0925H01L21/765
    • A semiconductor integrated circuit has P-channel active MOSFETs and N-channel active MOSFETs formed in a semiconductor substrate. In order to electrically isolate the active MOSFETs, the semiconductor integrated circuit has P-channel field shield MOS devices and N-channel field shield MOS devices. The P-channel field shield MOS devices have field shield electrodes which are laid on regions between impurity diffusion regions of the P-channel active MOSFETs. The N-channel field shield MOS devices have field shield electrodes which are laid on regions between impurity diffusion regions of N-channel active MOSFETs. A P-channel field shield voltage, which is higher than a power supply voltage of the semiconductor integrated circuit, is supplied to the field shield electrodes of the P-channel field shield MOS device to turn the P-channel field shield MOS devices to an OFF-state to electrically isolate the P-channel active MOSFETs. An N-channel field shield voltage, which is lower than a ground level of the semiconductor integrated circuit, is supplied to the field shield electrodes of the N-channel field shield MOS devices to turn the N-channel field shield MOS devices to an OFF-state to electrically isolate the N-channel active MOSFETs.
    • 半导体集成电路具有形成在半导体衬底中的P沟道有源MOSFET和N沟道有源MOSFET。 为了电气隔离有源MOSFET,半导体集成电路具有P沟道场屏蔽MOS器件和N沟道场屏蔽MOS器件。 P沟道场屏蔽MOS器件具有放电在P沟道有源MOSFET的杂质扩散区域之间的场屏蔽电极。 N沟道场屏蔽MOS器件具有放电在N沟道有源MOSFET的杂质扩散区域之间的场屏蔽电极。 将高于半导体集成电路的电源电压的P沟道场屏蔽电压提供给P沟道场屏蔽MOS器件的场屏蔽电极,以将P沟道场屏蔽MOS器件转换为 OFF状态以电隔离P沟道有源MOSFET。 将低于半导体集成电路的接地电平的N沟道场屏蔽电压提供给N沟道场屏蔽MOS器件的场屏蔽电极,以将N沟道场屏蔽MOS器件转为OFF 状态以电隔离N沟道有源MOSFET。
    • 8. 发明授权
    • Semiconductor memory apparatus
    • 半导体存储装置
    • US06797997B2
    • 2004-09-28
    • US10609478
    • 2003-07-01
    • Yoji Hata
    • Yoji Hata
    • H01L310328
    • G11C7/065G11C7/12G11C11/4091G11C11/4094
    • A semiconductor memory apparatus that stores data by accumulating charges in its capacitor is provided for allowing itself to be operated at a low potential and at a high speed. In the semiconductor memory apparatus, before performing a precharge by a precharging circuit 10 for the next cycle of read and write, a forced step-down circuit 11 previously lowers the potential of the bit line BL charged on the high side to a level within the range of preventing data of positive charges written and stored in a memory cell MC from being disappeared.
    • 提供了通过在其电容器中累积电荷来存储数据的半导体存储装置,用于允许其以低电位和高速运行。 在半导体存储装置中,在进行下一个读写周期的预充电电路10进行预充电之前,强制降压电路11预先将充电高位的位线BL的电位降低到 写入和存储在存储单元MC中的正电荷的数据的范围不会消失。
    • 10. 发明授权
    • Photomask covered with light-transmissive and electrically-conductive polymer material
    • 光掩模覆盖有透光和导电的聚合物材料
    • US07074526B2
    • 2006-07-11
    • US10456667
    • 2003-06-05
    • Yoji Hata
    • Yoji Hata
    • G03F9/00
    • G03F1/48G03F1/40
    • A photomask by which no electrostatic damage or damage of a mask pattern due to electrification is produced. The photomask has a substrate; mask patterns formed on the substrate, which are made of a light blocking material and are covered with a light-transmissive and electrically conductive polymer material. Even the mask patterns which are isolated from each other on the substrate are electrically conductive with each other. Typically, the mask patterns are covered with an electrically conductive film made of the light-transmissive and electrically conductive polymer material. The electrically conductive film may have a thickness by which when foreign particles land on the electrically conductive film, an optical image of the foreign particles is defocused on a sample to be exposed in the exposure process, so that shapes of the foreign particles are not transferred. In this case, a pellicle, which is conventionally provided on the substrate, is unnecessary.
    • 不产生静电损伤或由于带电导致的掩模图案损坏的光掩模。 光掩模具有基板; 形成在基板上的掩模图案,其由遮光材料制成并且被透光和导电的聚合物材料覆盖。 即使在基板上彼此隔离的掩模图案彼此导电。 通常,掩模图案被由透光和导电聚合物材料制成的导电膜覆盖。 导电膜可以具有当外来颗粒落在导电膜上时的厚度,外来颗粒的光学图像在曝光过程中在要暴露的样品上散焦,使得外来颗粒的形状不被转印 。 在这种情况下,通常设置在基板上的防护薄膜组件是不必要的。