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    • 4. 发明授权
    • Task-based experience reuse
    • 基于任务的体验重用
    • US08560480B2
    • 2013-10-15
    • US12868259
    • 2010-08-25
    • Ying DuBo Hu
    • Ying DuBo Hu
    • G06F17/00G06N5/02G06Q10/00G06F9/44
    • G06N5/02
    • Implementations of the present disclosure include receiving a task including structured data and unstructured data, processing the task to generate a current task object, the current task object comprising a plurality of task attributes, retrieving a previous task object, for each task attribute of the plurality of task attributes, calculating a task attribute similarity value based on a corresponding task attribute of the previous task object, determining whether a rule is applicable to a task similarity calculation, weighting each of the plurality of task attribute similarity values using a plurality of weight values, wherein a first weight value applied to a first task similarity value is different than a second weight value applied to a second task similarity calculation when determining that the rule is applicable to the task similarity calculation, calculating a task similarity value, and providing the task similarity value to be displayed on a display.
    • 本公开的实现包括接收包括结构化数据和非结构化数据的任务,处理该任务以生成当前任务对象,该当前任务对象包括多个任务属性,为多个任务对象的每个任务属性检索先前任务对象 根据上一任务对象的对应任务属性来计算任务属性相似度值,确定规则是否适用于任务相似度计算,使用多个权重值对所述多个任务属性相似度值中的每一个进行加权 其中,当确定所述规则适用于任务相似度计算,计算任务相似度值和提供任务时,应用于第一任务相似度值的第一加权值不同于应用于第二任务相似度计算的第二加权值 在显示器上显示的相似度值。
    • 5. 发明申请
    • HIGH-ENDURANCE PHASE CHANGE MEMORY DEVICES AND METHODS FOR OPERATING THE SAME
    • 高耐久性相变记忆体装置及其操作方法
    • US20120327708A1
    • 2012-12-27
    • US13472395
    • 2012-05-15
    • Pei-Ying DUChao-I WuMing-Hsiu LeeSangbum KimChung Hon Lam
    • Pei-Ying DUChao-I WuMing-Hsiu LeeSangbum KimChung Hon Lam
    • G11C11/00
    • G11C13/0004G11C13/0021
    • Phase change based memory devices and methods for operating such devices described herein overcome the set or reset failure mode and result in improved endurance, reliability and data storage performance. A high current repair operation is carried out in response to a set or reset failure of a phase change memory cell. The higher current repair operation can provide a sufficient amount of energy to reverse compositional changes in the phase change material which can occur after repeated set and reset operations. By reversing these compositional changes, the techniques described herein can recover a memory cell which experienced a set or reset failure, thereby extending the endurance of the memory cell. In doing so, phase change based memory devices and methods for operating such devices are provided which have high cycle endurance.
    • 基于相变的存储器件和用于操作这里描述的这种器件的方法克服了设置或复位故障模式并导致改进的耐久性,可靠性和数据存储性能。 响应于相变存储单元的置位或复位故障执行高电流修复操作。 更高的电流修复操作可以提供足够的能量来反转在重复设置和复位操作之后可能发生的相变材料的组成变化。 通过颠倒这些组合变化,本文描述的技术可以恢复经历设置或复位故障的存储器单元,从而延长存储单元的耐久性。 这样做,提供了具有高循环耐久性的基于相变的存储器件和用于操作这些器件的方法。
    • 6. 发明申请
    • TASK-BASED EXPERIENCE REUSE
    • 基于任务的体验重用
    • US20120054142A1
    • 2012-03-01
    • US12868259
    • 2010-08-25
    • Ying DuBo Hu
    • Ying DuBo Hu
    • G06N5/02
    • G06N5/02
    • Implementations of the present disclosure include receiving a task including structured data and unstructured data, processing the task to generate a current task object, the current task object comprising a plurality of task attributes, retrieving a previous task object, for each task attribute of the plurality of task attributes, calculating a task attribute similarity value based on a corresponding task attribute of the previous task object, determining whether a rule is applicable to a task similarity calculation, weighting each of the plurality of task attribute similarity values using a plurality of weight values, wherein a first weight value applied to a first task similarity value is different than a second weight value applied to a second task similarity calculation when determining that the rule is applicable to the task similarity calculation, calculating a task similarity value, and providing the task similarity value to be displayed on a display.
    • 本公开的实现包括接收包括结构化数据和非结构化数据的任务,处理该任务以生成当前任务对象,该当前任务对象包括多个任务属性,为多个任务对象的每个任务属性检索先前任务对象 根据上一任务对象的对应任务属性来计算任务属性相似度值,确定规则是否适用于任务相似度计算,使用多个权重值对所述多个任务属性相似度值中的每一个进行加权 其中,当确定所述规则适用于任务相似度计算,计算任务相似度值和提供任务时,应用于第一任务相似度值的第一加权值不同于应用于第二任务相似度计算的第二加权值 在显示器上显示的相似度值。
    • 7. 发明授权
    • Data analysis method for integrated circuit process and semiconductor process
    • 集成电路工艺和半导体工艺数据分析方法
    • US07386420B2
    • 2008-06-10
    • US11308986
    • 2006-06-02
    • Guohai ZhangKay-Ming LeeLu-Ying DuJui-Chun Kuo
    • Guohai ZhangKay-Ming LeeLu-Ying DuJui-Chun Kuo
    • G06F19/00
    • G05B19/41875G05B23/0294G05B2219/32222Y02P90/22
    • A data analysis method for an integrated circuit process is described, for analyzing the results of at least an in-line quality test, a product test and a yield test done to the products of the IC process. The products are divided into a normal group and an abnormal group based on the result of the in-line quality test, and are divided into a qualified group and an unqualified group based on the result of the yield test. A categorization step is performed to define the intersection of the unqualified group and the normal group as a first problematic group and to define the intersection of the unqualified group and the abnormal group as a second problematic group. By analyzing one or both of the two problematic groups, the major yield killer can be identified so that process modification can be made accordingly to improve the yield.
    • 描述了用于集成电路过程的数据分析方法,用于分析至少对IC工艺的产品进行的在线质量测试,产品测试和产量测试的结果。 基于在线质量检验的结果将产品分为正常组和异常组,根据产量测试结果分为合格组和不合格组。 执行分类步骤,将不合格组和正常组的交集定义为第一个有问题的组,并将不合格组与异常组的交集定义为第二个有问题的组。 通过分析两个问题组中的一个或两个,可以确定主要的产量杀手,从而可以相应地进行过程修改以提高产量。
    • 10. 发明授权
    • High-endurance phase change memory devices and methods for operating the same
    • 高耐久相变存储器件及其操作方法
    • US08891293B2
    • 2014-11-18
    • US13472395
    • 2012-05-15
    • Pei-Ying DuChao-I WuMing-Hsiu LeeSangbum KimChung Hon Lam
    • Pei-Ying DuChao-I WuMing-Hsiu LeeSangbum KimChung Hon Lam
    • G11C11/00G11C13/00
    • G11C13/0004G11C13/0021
    • Phase change based memory devices and methods for operating such devices described herein overcome the set or reset failure mode and result in improved endurance, reliability and data storage performance. A high current repair operation is carried out in response to a set or reset failure of a phase change memory cell. The higher current repair operation can provide a sufficient amount of energy to reverse compositional changes in the phase change material which can occur after repeated set and reset operations. By reversing these compositional changes, the techniques described herein can recover a memory cell which experienced a set or reset failure, thereby extending the endurance of the memory cell. In doing so, phase change based memory devices and methods for operating such devices are provided which have high cycle endurance.
    • 基于相变的存储器件和用于操作这里描述的这种器件的方法克服了设置或复位故障模式并导致改进的耐久性,可靠性和数据存储性能。 响应于相变存储单元的置位或复位故障执行高电流修复操作。 更高的电流修复操作可以提供足够的能量来反转在重复设置和复位操作之后可能发生的相变材料的组成变化。 通过颠倒这些组合变化,本文描述的技术可以恢复经历设置或复位故障的存储器单元,从而延长存储单元的耐久性。 这样做,提供了具有高循环耐久性的基于相变的存储器件和用于操作这些器件的方法。