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1. 发明公开

EP1149427A1 CATHODE ACTIVE MATERIAL FOR LITHIUM ELECTROCHEMICAL CELLS 审中-公开
标题翻译：阴极活性物质，锂电化学电池
公开(公告)号：EP1149427A1
公开(公告)日：2001-10-31
申请号：EP00906108.6
申请日：2000-02-28
申请人： Yoo, Yeong-Chang , Seung, Do-young , Davidson, Isobel
发明人： Yoo, Yeong-Chang , Seung, Do-young , Davidson, Isobel
IPC分类号： H01M4/48 , H01M4/50
CPC分类号： H01M10/0525 , H01M4/505 , H01M10/0565 , H01M10/0566 , H01M2004/027 , H01M2004/028
摘要： The invention disclosed relates to a novel single-phase compound of molecular formula Lix CryMn2-y O4+z, wherein 2.2

2. 发明专利

DE29705857U1 未知
公开(公告)号：DE29705857U1
公开(公告)日：1997-06-19
申请号：DE29705857
申请日：1997-04-02
申请人： CHUANG YEONG CHANG
IPC分类号： A63B69/36 , A63B53/04 , A63B53/00 , H01S3/19

3. 发明专利

AU2789500A Cathode active material for lithium electrochemical cells 未知
公开(公告)号：AU2789500A
公开(公告)日：2001-04-23
申请号：AU2789500
申请日：2000-02-28
申请人： YEONG CHANG YOO , DO YOUNG SEUNG , ISOBEL DAVIDSON
发明人： YOO YEONG-CHANG , SEUNG DO-YOUNG , DAVIDSON ISOBEL
IPC分类号： C01G45/00 , H01M4/02 , H01M4/50 , H01M4/505 , H01M10/0525 , H01M10/0565 , H01M10/0566 , H01M10/36 , H01M4/48

4. 发明授权

US07577162B2 Methods for allocating transmission bandwidths of a network 有权
标题翻译：分配网络传输带宽的方法
公开(公告)号：US07577162B2
公开(公告)日：2009-08-18
申请号：US11363941
申请日：2006-03-01
申请人： Yi-Ching Liaw , Yun-Lung Chou , Zone-Chang Lai , Yeong-Chang Maa , Chia-Chieh Tuanmu , Chu-Hsun Chang
发明人： Yi-Ching Liaw , Yun-Lung Chou , Zone-Chang Lai , Yeong-Chang Maa , Chia-Chieh Tuanmu , Chu-Hsun Chang
IPC分类号： H04J3/16
CPC分类号： H04J3/1694
摘要： Methods for allocating transmission bandwidths of a network are provided. The allocation ratio of anticipation bandwidths is adjusted according to the loading of the network to calculate the requested bandwidths, thereby effectively reducing an average delay and enhancing the utility rate of the network. Further, remaining bandwidth of the network is allocated based on maximum used bandwidth and bandwidth compensation of each terminal during the transmission cycle, to allocate excess bandwidth for each terminal. Therefore, the transmission bandwidth allocation is fairer, and delay is reduced. Upstream order of each terminal is transferred based on its requested bandwidth, thereby effectively reducing the average delay.
摘要翻译：提供了分配网络传输带宽的方法。根据网络负载调整预期带宽的分配比例，计算所需带宽，从而有效减少平均延迟并提高网络的效用。此外，基于在发送周期期间每个终端的最大使用带宽和带宽补偿来分配网络的剩余带宽，以为每个终端分配过多的带宽。因此，传输带宽分配更公平，延迟减少。每个终端的上行顺序根据其所请求的带宽进行传输，从而有效地减少了平均延迟。

5. 发明申请

US20080258176A1 Antimonide-based compound semiconductor with titanium tungsten stack 有权
标题翻译：锑化合物半导体与钛钨叠层
公开(公告)号：US20080258176A1
公开(公告)日：2008-10-23
申请号：US11788145
申请日：2007-04-18
申请人： Yeong-Chang Chou , Jay Crawford , Jane Lee , Jeffrey Ming-Jer Yang , John Bradley Boos , Nicolas Alexandrou Papanicolaou
发明人： Yeong-Chang Chou , Jay Crawford , Jane Lee , Jeffrey Ming-Jer Yang , John Bradley Boos , Nicolas Alexandrou Papanicolaou
IPC分类号： H01L23/48 , H01L21/3205 , H01L21/335 , H01L31/00
CPC分类号： H01L29/66431 , H01L29/7783
摘要： An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.
摘要翻译：一个实例中的装置包括基于锑化物的化合物半导体（ABCS）堆叠，形成在ABCS堆叠上的上阻挡层和形成在上阻挡层上的栅极堆叠。上阻挡层包括铟，铝和砷。栅堆叠包括形成在上阻挡层上的钛和钨的基层。

6. 发明授权

US07411226B2 High electron mobility transistor (HEMT) structure with refractory gate metal 有权
$High electron mobility transistor (HEMT) structure with refractory gate metal$
标题翻译：高电子迁移率晶体管（HEMT）结构与难熔栅极金属
公开(公告)号：US07411226B2
公开(公告)日：2008-08-12
申请号：US11115938
申请日：2005-04-27
申请人： Yeong-Chang Choug , Ronald Grundbacher , Po-Hsin Liu , Denise L. Leung , Richard Lai
发明人： Yeong-Chang Choug , Ronald Grundbacher , Po-Hsin Liu , Denise L. Leung , Richard Lai
IPC分类号： H01L31/00 , H01L29/80 , H01L21/28
CPC分类号： H01L29/7783 , H01L29/42316 , H01L29/475
摘要： An InP high electron mobility transistor (HEMT) structure in which a gate metal stack includes an additional thin layer of a refractory metal, such as molybdenum (Mo) or platinum (Pt) at a junction between the gate metal stack and a Schottky barrier layer in the HEMT structure. The refractory metal layer reduces or eliminates long-term degradation of the Schottky junction between the gate metal and the barrier layer, thereby dramatically improving long-term reliability of InP HEMTs, but without sacrifice in HEMT performance, whether used as a discrete device or in an integrated circuit.
摘要翻译： InP高电子迁移率晶体管（HEMT）结构，其中栅极金属堆叠在栅极金属堆叠和肖特基势垒层之间的结处包括诸如钼（Mo）或铂（Pt）的难熔金属的附加薄层在HEMT结构中。难熔金属层减少或消除了栅极金属和阻挡层之间的肖特基结的长期降解，从而显着提高了InP HEMT的长期可靠性，但不牺牲HEMT性能，无论是用作分立器件还是在集成电路。

7. 发明授权

US6144596A Semiconductor memory test apparatus 有权
标题翻译：半导体存储器测试装置
公开(公告)号：US6144596A
公开(公告)日：2000-11-07
申请号：US188410
申请日：1998-11-10
申请人： Yeong Chang Ahn
发明人： Yeong Chang Ahn
IPC分类号： G01R31/28 , G01R31/3185 , G11C7/10 , G11C7/22 , G11C11/401 , G11C11/407 , G11C29/00 , G11C29/02 , G11C29/46 , G11C29/50 , G11C7/00
CPC分类号： G11C29/028 , G11C29/02 , G11C29/46 , G11C29/50 , G11C29/50012 , G11C7/1045 , G11C7/22 , G11C11/401
摘要： A semiconductor memory test apparatus includes a test signal input unit for externally receiving a test word line model signal and a test column address pulse enable signal, which are used for a memory operation in the test mode. The test apparatus also includes a test mode setting unit that receives: a row address strobe bar signal, a column address strobe bar signal, a write enable bar signal and an address signal, and that generates first and second test mode setting signals. A first switching unit switches a signal input from a row address path circuit or from the test signal input unit, in accordance with a first test mode setting signal. A second switching unit switches another signal input from the row address path circuit or from the test signal input unit in accordance with a second test mode setting signal, and outputs the switched signal to the column address path circuit.
摘要翻译：半导体存储器测试装置包括用于外部接收测试字线模型信号的测试信号输入单元和用于测试模式中的存储器操作的测试列地址脉冲使能信号。测试装置还包括测试模式设置单元，其接收行地址选通信号，列地址选通信号，写使能条信号和地址信号，并且产生第一和第二测试模式设置信号。第一切换单元根据第一测试模式设置信号切换来自行地址路径电路或来自测试信号输入单元的信号。第二切换单元根据第二测试模式设置信号切换从行地址路径电路或测试信号输入单元输入的另一个信号，并将切换的信号输出到列地址路径电路。

8. 发明授权

US5210678A Chain-type discharge wire for use in an electrostatic precipitator 失效
标题翻译：用于静电除尘器的链式放电线
公开(公告)号：US5210678A
公开(公告)日：1993-05-11
申请号：US807711
申请日：1991-12-16
申请人： Yeong-Chang Lain , Rey-Chein Chang , Ching-I Juch
发明人： Yeong-Chang Lain , Rey-Chein Chang , Ching-I Juch
IPC分类号： B03C3/41
CPC分类号： B03C3/41 , B03C2201/10
摘要： An improved discharge wire for use in an electrostatic precipitator which is used for collecting pollutant particles contained in a flow of exhaust gas. The improved discharge wire is a chain having a plurality of chain links made of conductive material. There is provided at least one needle-like member made of conductive material on at least one of the chain links. As an electric potential is applied to the chain, the needle-like member emits corona current. The corona current charges the pollutant particles such that the pollutant particles are forced by the electric field to a collecting member.
摘要翻译：一种用于静电除尘器的改进放电线，用于收集废气流中所含的污染物颗粒。改进的放电线是具有由导电材料制成的多个链节的链。在至少一个链节上设置有由导电材料制成的至少一个针状构件。当电链施加电压时，针状部件发射电晕电流。电晕电流对污染物颗粒进行充电，使得污染物颗粒被电场强迫到收集构件。

9. 发明授权

US5040169A Wavelength division photonic switch 失效
标题翻译：波分光电开关
公开(公告)号：US5040169A
公开(公告)日：1991-08-13
申请号：US384601
申请日：1989-07-25
申请人： Roch A. Guerin , Yeong-Chang Lien
发明人： Roch A. Guerin , Yeong-Chang Lien
IPC分类号： H04Q11/02 , H04Q3/52 , H04Q11/00
CPC分类号： H04Q11/0003
摘要： This invention describes a method of transmitting data through a passive central switching fabric, where data can be transmitted from any input port of the fabric to any output port of the fabric. The switching fabric has N multiplexors and N demultiplexors. The input ports of the demultiplexors are the input ports of the fabric, while the output ports of the multiplexors are the output ports of the fabric. The outputs of each demultiplexor lie in a horizontal plane, while the inputs of each multiplexor lie in a vertical plane. The outputs of the demultiplexors in the horizontal planes are butted against the inputs of the multiplexors so as to establish optical contact between the outputs of the demultiplexors and the inputs of the multiplexors. Modulated wavelengths are then demultiplexed and mutliplexed in such a fashion so as to allow data from any input port of the switching fabric to be transmitted to any output port of the switching fabric merely by modulating a corresponding one of N wavelengths.

10. 发明授权

US4845669A Transporsable memory architecture 失效
标题翻译：可变内存架构
公开(公告)号：US4845669A
公开(公告)日：1989-07-04
申请号：US186546
申请日：1988-04-27
申请人： Barbara A. Chappell , Yeong-Chang Lien , Jeffrey Y. Tang
发明人： Barbara A. Chappell , Yeong-Chang Lien , Jeffrey Y. Tang
IPC分类号： G11C11/41 , G11C8/12
CPC分类号： G11C8/12
摘要： A transposable memory architecture for providing equally fast access to stored data in two or more dimensions. This architecture is provided by orthogonal wiring of access devices, word lines and bit lines with independent random accessing capability for data in each direction. The transposable memory architecture (TMA) cell directly inplements the TMA architecture using only one access device per dimension of access. This invention also describes multiple transposable memory architecture (MTMA) device for additional data path flexibility. The read and write operations described provide access and cycle times approximately equivalent to those for a convention one-dimension RAM.

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