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1. 发明专利

JP2008308978A Method for fixing post while preventing corrosion 有权
标题翻译：用于固定防止腐蚀的方法
公开(公告)号：JP2008308978A
公开(公告)日：2008-12-25
申请号：JP2008025799
申请日：2008-02-05
申请人： Yasuo Kakizaki , Suginaka Kazuo , 杉中一雄 , 泰夫柿崎
发明人： KAKIZAKI YASUO
IPC分类号： E01F15/02
摘要： PROBLEM TO BE SOLVED: To provide a method for fixing a post in an embedded hole while preventing corrosion produced in a steel pipe serving as a post of a guardrail.
SOLUTION: A part 13 of an embedded portion of a post 1 for 10-50 cm length downwards from the ground surface where corrosion is easy to be produced is covered, interposing a double-coated pressure-sensitive adhesive tape made of non-vulcanized butyl rubber 5, with a cylindrical sleeve 6A-C made of plastic such as polyolefine or the like. At the upper part of the sleeve, the upper end of the double-coated pressure-sensitive adhesive tape is located a little lower while a caulking material 9 is filled in a space between the post and the sleeve. The post is inserted into an embedded hole 2 provided in advance. Then, after sand 4 is filled around a base up to the ground surface, the portion between the part not embedded in the sand and the part a little above the ground surface is fixed with a road repair material 8 while the road repair material is filled up extra so that rainwater flows smoothly. Liquid rubber filler or cement mortar can be filled and fixed around the part requiring corrosion protection.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种固定在嵌入孔中的柱的方法，同时防止在用作护栏的柱的钢管中产生的腐蚀。解决方案：覆盖容易产生腐蚀的地面向下10-50cm长度的柱1的嵌入部分13，插入由非涂层制成的双面压敏粘合带具有由诸如聚烯烃等的塑料制成的圆柱形套筒6A-C的硫化丁基橡胶5。在套筒的上部，双面压敏粘合带的上端位于稍低的位置，而填缝材料9填充在柱和套筒之间的空间中。该柱被插入预先设置的嵌入孔2中。然后，在沙子4被填充到基面附近的地面之后，未嵌入砂的部分和稍微高于地面的部分之间的部分用道路修复材料8固定，同时道路修补材料被填满增加额外的雨水顺利进行。液体橡胶填料或水泥砂浆可以填充并固定在需要防腐蚀的部件周围。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2008000098A Artificial seaweed element 审中-公开
标题翻译：人造海洋元素
公开(公告)号：JP2008000098A
公开(公告)日：2008-01-10
申请号：JP2006174645
申请日：2006-06-23
申请人： Yasuo Kakizaki , 泰夫柿崎
发明人： KAKIZAKI YASUO
IPC分类号： A01K61/00
CPC分类号： Y02A40/81 , Y02A40/836
摘要： PROBLEM TO BE SOLVED: To provide artificial seaweed elements forming an artificial seaweed structure, wherein the artificial seaweed foliate bodies are so strong that the foliate bodies are not easily damaged even when used in strong flow conditions and exert sufficient durability and the surface of the foliate bodies is in a suitable state in which spores of the seaweed adhere and grow.
SOLUTION: The artificial seaweed elements for the artificial seaweed structure comprising artificial seaweed elements and fixing elements therefor comprises a foliate body 3, foliate body fixing elements and floats 5, wherein the foliate body 3 comprises a belt obtained by cutting a laminate comprising a lining sheet 31 made of a nonwoven fabric or a woven fabric and a reclaimed rubber sheet 32 having the surface abundant in irregularity. The foliate body belt forms a horse-shoe shape in water by the floats 5. The float 5 is attached with a buoyancy-giving material 51 made of a plastic foam having closed pores, with a float fixing device 52 of a plastic, on the almost central part of the foliate body.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供形成人造海藻结构的人造海藻元件，其中人造海藻叶片体非常强，即使在强流动条件下使用时也不容易损坏叶片体并施加足够的耐久性，并且表面的叶状物质处于适合的状态，其中海藻的孢子粘附并生长。包括人造海藻元件和固定元件的人造海藻结构的人工海藻元件包括叶体3，叶体固定元件和浮子5，其中叶体3包括通过切割层压材料而获得的带，由无纺布或织物制成的衬里片31和具有不规则形状的表面的再生橡胶片32。叶片体带通过浮体5在水中形成马鞋形状。浮子5附着有由具有闭孔的塑料泡沫制成的浮力赋予材料51，其上具有塑料的浮子固定装置52 几乎中部的叶酸体。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2010106649A Method of performing anticorrosion treatment to fix post, and cylindrical sleeve for use in anticorrosion treatment 有权
标题翻译：用于固定治疗的抗静电治疗方法和用于治疗治疗的圆柱体套管
公开(公告)号：JP2010106649A
公开(公告)日：2010-05-13
申请号：JP2009003000
申请日：2009-01-08
申请人： Yasuo Kakizaki , Kazuo Suginaka , 一雄杉中 , 泰夫柿崎
发明人： KAKIZAKI YASUO , SUGINAKA KAZUO
IPC分类号： E01F15/02 , E01F15/04
摘要： PROBLEM TO BE SOLVED: To provide a method of fixing a post into a burying hole while preventing corrosion of a steel pipe used as the post of a guardrail.
SOLUTION: A base part 11 of the steel post 1 is buried and fixed into the ground after applying anticorrosion treatment to the base part. As the anticorrosion treatment, the base part is covered with a cylindrical plastic sleeve 6 through an adhesive sheet 5, and a cap 7 made of rubber with high weather resistance is put on the upper part of the cylindrical sleeve. The inner diameter of the rubber cap is smaller than the outer diameter of the post, and when put on, the upper end of the rubber cap is directly brought into close contact with the post to prevent infiltration of rainwater between the post and the cylindrical sleeve while holding down the upper part of the cylindrical sleeve. Burying is carried out by putting the corrosion-treated post in the burying hole provided beforehand, filling sand 4 around leaving 1-5 cm from the ground surface, and then filling cement mortar 3 on top of the sand for fixing.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种将柱固定到埋入孔中同时防止用作护栏柱的钢管的腐蚀的方法。解决方案：在对基座进行防腐蚀处理之后，将钢柱1的基部11埋入并固定到地面中。作为防腐蚀处理，基部通过粘合片5被圆筒状的塑料套筒6覆盖，并且将由耐高温性高的橡胶制成的盖7放置在圆筒形套筒的上部。橡胶帽的内径小于柱的外径，当放置时，橡胶帽的上端直接与柱接触，以防止雨水在柱和圆筒套之间渗透同时按住圆柱形套筒的上部。通过将腐蚀处理的柱体放置在预先设置的埋置孔中，将沙子4填充到离地面1-5cm处，然后在砂的顶部填充水泥砂浆3进行固定，进行埋藏。版权所有（C）2010，JPO＆INPIT

4. 发明授权

US07256104B2 Substrate manufacturing method and substrate processing apparatus 失效
标题翻译：基板制造方法和基板处理装置
公开(公告)号：US07256104B2
公开(公告)日：2007-08-14
申请号：US10841621
申请日：2004-05-10
申请人： Masataka Ito , Kenji Yamagata , Yasuo Kakizaki , Kazuhito Takanashi , Hiroshi Miyabayashi , Ryuji Moriwaki , Takashi Tsuboi
发明人： Masataka Ito , Kenji Yamagata , Yasuo Kakizaki , Kazuhito Takanashi , Hiroshi Miyabayashi , Ryuji Moriwaki , Takashi Tsuboi
IPC分类号： H01L21/46 , H01L21/30 , H01L21/762
CPC分类号： H01L22/12 , H01L21/30604 , H01L21/31056 , H01L21/31654 , H01L21/32134 , H01L21/6708 , H01L21/76254 , H01L21/76259 , H01L22/20
摘要： An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.
摘要翻译：首先制备具有厚SOI层的SOI衬底。然后，使用不大于一个晶格的预定厚度的单位将SOI层减薄到目标膜厚度。这种稀化是通过重复单元稀化步骤进行的，该步骤包括将SOI层的表面氧化预定厚度不超过一个晶格的氧化步骤，以及选择性地除去氧化形成的氧化硅的去除步骤。通过向SOI层提供化学溶液来对SOI衬底的SOI层进行化学蚀刻，并测量蚀刻的SOI层的膜厚。当所测量的SOI层的膜厚度具有预定值时，SOI层的化学蚀刻处理结束。

5. 发明授权

US07008860B2 Substrate manufacturing method 失效
标题翻译：基板制造方法
公开(公告)号：US07008860B2
公开(公告)日：2006-03-07
申请号：US10778248
申请日：2004-02-17
申请人： Yasuo Kakizaki , Masataka Ito
发明人： Yasuo Kakizaki , Masataka Ito
IPC分类号： H01L21/30
CPC分类号： H01L21/76256 , H01L21/76254
摘要： This invention provides a method of manufacturing a substrate having a thin buried insulating film. An insulating layer (12) is formed on a single-crystal Si substrate (11). Ions are implanted into the substrate (11) through the insulating layer (12) to form an ion-implanted layer (13). The insulating layer (12) is thinned down to form a thin insulating layer (12a). A thus prepared first substrate is placed on a second substrate (20) to form a bonded substrate stack (30). After that, the bonded substrate stack (30) is split at the ion-implanted layer (13).
摘要翻译：本发明提供一种制造具有薄的掩埋绝缘膜的衬底的方法。在单晶Si衬底（11）上形成绝缘层（12）。离子通过绝缘层（12）注入到衬底（11）中以形成离子注入层（13）。绝缘层（12）被减薄以形成薄的绝缘层（12a）。将如此制备的第一衬底放置在第二衬底（20）上以形成键合衬底叠层（30）。之后，键合衬底叠层（30）在离子注入层（13）处分裂。

6. 发明授权

US06326279B1 Process for producing semiconductor article 失效
标题翻译：半导体制品的制造方法
公开(公告)号：US06326279B1
公开(公告)日：2001-12-04
申请号：US09532079
申请日：2000-03-21
申请人： Yasuo Kakizaki , Takao Yonehara , Nobuhiko Sato
发明人： Yasuo Kakizaki , Takao Yonehara , Nobuhiko Sato
IPC分类号： H01L2176
CPC分类号： H01L21/76259
摘要： To lessen the number of steps and reduce cost in the manufacture of high-quality SOI substrate, a process for producing a semiconductor article comprises the steps of forming a porous semiconductor layer at at least one surface of a first substrate, forming a non-porous single-crystal semiconductor layer on the porous semiconductor layer, bonding the first substrate to a second substrate with the former's non-porous single-crystal semiconductor layer facing the latter in contact, to form a bonded structure, and dividing the bonded structure at the porous semiconductor layer, wherein the process further comprises the step of previously forming on the one surface of the first substrate an epitaxial silicon layer in a thickness at least n-times (n≧2) the thickness of the porous semiconductor layer.
摘要翻译：为了减少步骤数量并降低制造高质量SOI衬底的成本，制造半导体产品的方法包括以下步骤：在第一衬底的至少一个表面上形成多孔半导体层，形成无孔在多孔半导体层上形成单晶半导体层，将第一衬底与第二衬底接合，使前者的无孔单晶半导体层面向后面的非多孔单晶半导体层接触，形成接合结构，并将接合结构分为多孔半导体层，其中所述工艺还包括以下步骤：在所述第一衬底的所述一个表面上形成厚度至少为所述多孔半导体层的厚度的n倍（n≥2）的厚度的外延硅层。

7. 发明申请

US20070190746A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20070190746A1
公开(公告)日：2007-08-16
申请号：US11690395
申请日：2007-03-23
申请人： Masataka Ito , Kenji Yamagata , Yasuo Kakizaki , Kazuhito Takanashi , Hiroshi Miyabayashi , Ryuji Moriwaki , Takashi Tsuboi
发明人： Masataka Ito , Kenji Yamagata , Yasuo Kakizaki , Kazuhito Takanashi , Hiroshi Miyabayashi , Ryuji Moriwaki , Takashi Tsuboi
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L22/12 , H01L21/02164 , H01L21/02238 , H01L21/30604 , H01L21/31056 , H01L21/31654 , H01L21/32134 , H01L21/6708 , H01L21/76254 , H01L21/76259 , H01L22/20
摘要： An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.
摘要翻译：首先制备具有厚SOI层的SOI衬底。然后，使用不大于一个晶格的预定厚度的单位将SOI层减薄到目标膜厚度。这种稀化是通过重复单元稀化步骤进行的，该步骤包括将SOI层的表面氧化预定厚度不超过一个晶格的氧化步骤，以及选择性地除去氧化形成的氧化硅的去除步骤。通过向SOI层提供化学溶液来对SOI衬底的SOI层进行化学蚀刻，并测量蚀刻的SOI层的膜厚。当所测量的SOI层的膜厚度具有预定值时，SOI层的化学蚀刻处理结束。

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