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1. 发明授权

US07547932B2 Vertical gate-depleted single electron transistor 有权
标题翻译：垂直栅极耗尽的单电子晶体管
公开(公告)号：US07547932B2
公开(公告)日：2009-06-16
申请号：US10302635
申请日：2002-11-22
申请人： Yaohui Zhang , Filipp A. Baron , Kang L. Wang
发明人： Yaohui Zhang , Filipp A. Baron , Kang L. Wang
IPC分类号： H01L27/108
CPC分类号： B82Y10/00 , H01L29/7613 , H01L29/812
摘要： A vertical gate-depleted single electron transistor (SET) is fabricated on a conducting or insulating substrate. A plurality of lightly doped basic materials and tunneling barriers are fabricated on top of a substrate, wherein at least two of the layers of basic materials sandwich the layers of tunneling barriers and at least two of the layers of tunneling barriers sandwich at least one of the layers of basic materials. A mesa is fabricated on top of the layers of basic materials and tunneling barriers, and has an undercut shape. An ohmic contact is fabricated on top of the mesa, and one or more gate Schottky contacts are fabricated on top of the layers of lightly doped basic materials and tunneling barriers. A quantum dot is induced by gate depletion, when a source voltage is set as zero, a drain voltage is set to be less than 0.1, and a gate voltage is set to be negative. The depletion region expands toward the center of the device and forms a lateral confinement to the quantum well, wherein a quantum dot is obtained. Because the size of the quantum dot is so small, the Coulomb charging energy achieved is large enough to let the device operate at room temperature.
摘要翻译：在导电或绝缘基板上制造垂直栅极耗尽的单电子晶体管（SET）。在衬底的顶部上制造多个轻掺杂的基本材料和隧道势垒，其中至少两层基本材料层夹着隧道势垒的层，并且至少两层隧穿势垒夹着至少一层层的基本材料。在基础材料和隧道屏障层之上制造台面，并具有底切形状。在台面的顶部制造欧姆接触，并且在轻掺杂的基础材料和隧道势垒的层之上制造一个或多个栅极肖特基接触。当栅极耗尽时，源极电压被设置为零，漏极电压被设定为小于0.1，栅极电压被设定为负值，就会产生量子点。耗尽区朝向器件的中心扩展，并形成量子阱的侧向约束，其中获得量子点。因为量子点的尺寸如此之小，所以实现的库仑充电能够足够大以使器件在室温下工作。

2. 发明授权

US06785612B1 Seismic velocity update for anisotropic depth migration 失效
标题翻译：各向异性深度偏移的地震速度更新
公开(公告)号：US06785612B1
公开(公告)日：2004-08-31
申请号：US10447987
申请日：2003-05-29
申请人： Yaohui Zhang
发明人： Yaohui Zhang
IPC分类号： G01V100
CPC分类号： G01V1/286 , G01V1/303
摘要： A method of updating velocity whereby corresponding reflections are identified from P-P and P-S near-offset waves received from a seismic source and reflected by a subsurface layer to form P-P and P-S depth consistent image gathers. A joint velocity inversion in depth is performed on the P-P and P-S depth consistent image gathers to estimate a vertical depth zo, vertical P-wave velocity vpo, and vertical S-wave velocity vso of the subsurface layer. An isotropic depth migration of P-P depth consistent image gathers is determined based upon the depth zo, P-wave velocity vpo, and S-wave velocity vso to estimate a vertical isotropic depth zpp of the subsurface layer. Anisotropic parameters &dgr; and &sgr; are calculated based upon the depth zpp, P-wave velocity vp0, and S-wave velocity vso. The above steps are repeated, beginning with the joint velocity inversion, until the P-wave velocity vpo and S-wave velocity vso are substantially unchanged.
摘要翻译：一种更新速度的方法，其中从由地震源接收并由地下层反射以形成P-P和P-S深度一致的图像聚集的P-P和P-S近偏移波识别相应的反射。对P-P和P-S深度一致图像采集进行深度联合速度反演，以估计地下层的垂直深度zo，垂直P波速度vpo和垂直S波速度vso。基于深度zo，P波速度vpo和S波速度vso来确定P-P深度一致图像聚集的各向同性深度偏移，以估计地下层的垂直各向同性深度zpp。基于深度zpp，P波速度vp0和S波速度vso计算各向异性参数delta和sigma。重复上述步骤，从联合速度反转开始，直到P波速度vpo和S波速度vso基本上不变。

3. 发明授权

US06509609B1 Grooved channel schottky MOSFET 失效
标题翻译：沟槽肖特基MOSFET
公开(公告)号：US06509609B1
公开(公告)日：2003-01-21
申请号：US09884345
申请日：2001-06-18
申请人： Yaohui Zhang , Bich-Yen Nguyen , Kuntal Joardar , Daniel Thanh-Khac Pham
发明人： Yaohui Zhang , Bich-Yen Nguyen , Kuntal Joardar , Daniel Thanh-Khac Pham
IPC分类号： H01L2978
CPC分类号： H01L29/66643 , H01L21/823437 , H01L21/823828 , H01L29/6656 , H01L29/66621 , H01L29/7834 , H01L29/7839
摘要： A grooved channel Schottky contacted MOSFET has asymmetric source and drain regions. The MOSFET includes an undoped silicon substrate with a background doping concentration of less than about 1017 cm−3. A grooved channel is formed in a first surface of the substrate. A first metal silicide material is formed in a first side of the grooved channel, forming a source region, and a second metal silicide material is formed on a second side of the grooved channel, forming a drain region. A metal gate is formed in the grooved channel. The grooved structure allows the off-state current to be reduced to less than 50 pA/&mgr;m. Further, the feature size can be scaled down to 10 nm without strong short-channel effects (DIBL
摘要翻译：沟槽沟道肖特基接触MOSFET具有不对称的源极和漏极区域。 MOSFET包括背景掺杂浓度小于约1017cm-3的未掺杂硅衬底。在基板的第一表面中形成开槽通道。第一金属硅化物材料形成在带槽沟道的第一侧，形成源极区，并且第二金属硅化物材料形成在带槽沟道的第二侧上，形成漏区。在沟槽通道中形成金属门。带槽结构允许关断状态电流降低到小于50pA / mum。此外，特征尺寸可以缩小到10nm，而没有强的短信道效应（DIBL <0.063），并且门延迟（CV / I）降低到2.4ps。

4. 发明授权

US5991044A Method and apparatus for determining characteristics of microstructures utilizing micro-modulation reflectance spectrometry 失效
标题翻译：利用微调反射光谱法测定微结构特性的方法和装置
公开(公告)号：US5991044A
公开(公告)日：1999-11-23
申请号：US869058
申请日：1997-06-04
申请人： Yaohui Zhang , Zhoa Siping , Li Ming Fu , Andrew Yen , George Sheng
发明人： Yaohui Zhang , Zhoa Siping , Li Ming Fu , Andrew Yen , George Sheng
IPC分类号： G01N21/17 , G01N21/25
CPC分类号： G01N21/1717
摘要： A method and apparatus for measuring the characteristics of microstructures by modulating a sample using a modulated source and utilizing a microscope to magnify a desired sample area and direct a monochromatic probe light source onto the desired microstructure of the sample. The probe light is reflected by the sample and the reflectance spectra is directed by the microscope and thereafter, is detected and transmitted to a computer to record or display the measured characteristic. Further, the computer is also used to control the brightness of the monochromatic probe light and to control the modulation frequency of the modulated source. The wavelength of the monochromatic probe light can also be varied by the computer. The magnification of the microscope can be varied so that the desired microstructure is visible and the probing light spot is precisely placed on it. The desired sample microstructure can be precisely located within the viewing field of the microscope through the use of an indicator like a cross line indicator.
摘要翻译：一种用于通过使用调制源调制样品并利用显微镜来放大所需样品面积并将单色探针光源引导到样品的所需微结构上来测量微结构特征的方法和装置。探针光被样品反射，反射光谱由显微镜引导，此后被检测并传输到计算机记录或显示测量的特征。此外，计算机还用于控制单色探针光的亮度并且控制调制源的调制频率。单色探针光的波长也可以由计算机改变。可以改变显微镜的放大倍数，使得期望的微结构是可见的，并且将探测光斑精确放置在其上。通过使用诸如交叉线指示器的指示器，期望的样品微结构可以精确地位于显微镜的视野内。

5. 发明申请

US20070269882A1 LIQUID VOLUMETRIC DEVICE AND METHOD 失效
标题翻译：液体体积装置和方法
公开(公告)号：US20070269882A1
公开(公告)日：2007-11-22
申请号：US11530388
申请日：2006-09-08
申请人： Yaohui ZHANG , Cheng ZHANG , Liangqing LI
发明人： Yaohui ZHANG , Cheng ZHANG , Liangqing LI
IPC分类号： C12M1/34 , C12M3/00
CPC分类号： G01N35/1095 , G01N35/1016 , G01N2035/1032
摘要： The present invention discloses a liquid volumetric device comprising a metering tube, a start sensor, an end sensor, a bath for storage of a sample to be metered, a vacuum chamber and a pump for pumping out air inside the vacuum chamber to form a negative pressure inside the vacuum chamber. The start sensor and the end sensor are provided respectively at the bottom and the top of the metering tube, the top of the metering tube is in communication respectively with the vacuum chamber and the outside atmosphere via pipelines, the bottom of the metering tube is in communication respectively with the bath and the vacuum chamber via pipelines, and control parts are provided in each of the pipelines for controlling connection/disconnection thereof. Thus, by forming a negative pressure inside the vacuum chamber, a sample in the bath may be pressed from down to up into the metering tube by means of a pressure difference between the atmosphere and the negative pressure, so as to complete the volume metering, whereby an occurrence of the side flow phenomenon can be completely eliminated.
摘要翻译：本发明公开了一种液体体积装置，包括计量管，起始传感器，端部传感器，用于储存要计量的样品的浴，真空室和泵，用于抽出真空室内的空气以形成负的真空室内的压力。启动传感器和端部传感器分别设置在计量管的底部和顶部，计量管的顶部通过管道与真空室和外部大气分别连通，计量管的底部处于通过管道分别与浴室和真空室通信，并且在每个管道中设置控制部件，用于控制其连接/断开。因此，通过在真空室内形成负压，可以通过大气压与负压之间的压力差将浴中的样品从下向上按压到计量管中，从而完成体积计量，从而可以完全消除侧流现象的发生。

6. 发明授权

US6128581A Dynamic datumming for land and marine multicomponent seismic data processing 失效
标题翻译：陆地和海洋多组分地震数据处理动态数据
公开(公告)号：US6128581A
公开(公告)日：2000-10-03
申请号：US314647
申请日：1999-05-19
申请人： Yaohui Zhang
发明人： Yaohui Zhang
IPC分类号： G01V1/36 , G01V1/28
CPC分类号： G01V1/362 , G01V2210/52 , G01V2210/53
摘要： A method and device for processing a seismic survey data set including: an actual source location, an actual receiver location, and an actual reflection event location is provided. The actual source location and actual receiver location are over a first layer having a first layer velocity and a first layer ray parameter, and over a second layer having a second layer velocity different from the first layer velocity and a second layer ray parameter different from the first layer ray parameter. The actual reflection event location is located below the first layer. The method comprises: providing the first layer velocity; providing the second layer velocity; providing the first layer ray parameter; providing the second layer ray parameter; determining a correction factor for the position of a ray path end dependant upon the first and second layer velocities and the first and second layer ray parameters; and applying the correction factor to the ray path end, wherein a ray path-corrected ray path end is provided. The ray path end comprises a member of the group consisting of: the actual source location, the actual receiver location, and the actual reflection event location. The ray path corrected ray path end comprises a member of the group consisting of: the ray path corrected source location, the ray path corrected receiver location, and the ray path corrected reflection event location.
摘要翻译：一种用于处理地震勘测数据集的方法和装置，包括：实际源位置，实际接收器位置和实际反射事件位置。实际的源位置和实际的接收器位置在具有第一层速度和第一层射线参数的第一层之上，并且在具有不同于第一层速度的第二层速度的第二层上以及不同于第一层速度的第二层射线参数第一层射线参数。实际的反射事件位置位于第一层之下。该方法包括：提供第一层速度; 提供第二层速度; 提供第一层射线参数; 提供第二层射线参数; 确定取决于第一和第二层速度以及第一和第二层射线参数的射线路径端的位置的校正因子; 以及将所述校正因子应用于所述射线路径端，其中提供射线路径校正的射线路径端。射线路径端包括由实际源位置，实际接收器位置和实际反射事件位置组成的组中的成员。光线路径校正射线路径端包括由以下组成的组的成员：光线路径校正源位置，射线路径校正接收器位置和射线路径校正反射事件位置。

7. 发明授权

US07803059B2 Laser beam method and system for golfer alignment 有权
标题翻译：激光束法和高尔夫球对准系统
公开(公告)号：US07803059B2
公开(公告)日：2010-09-28
申请号：US11827327
申请日：2007-07-11
申请人： Yaohui Zhang
发明人： Yaohui Zhang
IPC分类号： A63B69/36
CPC分类号： A63B69/36 , A63B69/3608 , A63B69/3614 , A63B69/3667 , A63B2071/0694 , A63B2209/10
摘要： An improved static alignment and an improved dynamic alignment are combined in a laser beam method and system that provides instantaneous and continuous information feedback to a golfer to allow the real time correction of defects arising from a golfer's stance, head movement, body movement, golf club alignment, and golf club swing.
摘要翻译：改进的静态对准和改进的动态对准在激光束方法和系统中组合，其向高尔夫球手提供瞬时和连续的信息反馈，以允许实时校正由高尔夫球手的姿态，头部运动，身体运动，高尔夫球杆对齐和高尔夫球杆摆动。

8. 发明申请

US20090127543A1 VERTICAL GATE-DEPLETED SINGLE ELECTRON TRANSISTOR 有权
标题翻译：垂直门式单电子晶体管
公开(公告)号：US20090127543A1
公开(公告)日：2009-05-21
申请号：US10302635
申请日：2002-11-22
申请人： Yaohui Zhang , Filipp A. Baron , Kang L. Wang
发明人： Yaohui Zhang , Filipp A. Baron , Kang L. Wang
IPC分类号： H01L29/66 , H01L21/20
CPC分类号： B82Y10/00 , H01L29/7613 , H01L29/812
摘要： A vertical gate-depleted single electron transistor (SET) is fabricated on a conducting or insulating substrate. A plurality of lightly doped basic materials and tunneling barriers are fabricated on top of a substrate, wherein at least two of the layers of basic materials sandwich the layers of tunneling barriers and at least two of the layers of tunneling barriers sandwich at least one of the layers of basic materials. A mesa is fabricated on top of the layers of basic materials and tunneling barriers, and has an undercut shape. An ohmic contact is fabricated on top of the mesa, and one or more gate Schottky contacts are fabricated on top of the layers of lightly doped basic materials and tunneling barriers. A quantum dot is induced by gate depletion, when a source voltage is set as zero, a drain voltage is set to be less than 0.1, and a gate voltage is set to be negative. The depletion region expands toward the center of the device and forms a lateral confinement to the quantum well, wherein a quantum dot is obtained. Because the size of the quantum dot is so small, the Coulomb charging energy achieved is large enough to let the device operate at room temperature.
摘要翻译：在导电或绝缘基板上制造垂直栅极耗尽的单电子晶体管（SET）。在衬底的顶部上制造多个轻掺杂的基本材料和隧道势垒，其中至少两层基本材料层夹着隧道势垒的层，并且至少两层隧穿势垒夹着至少一层层的基本材料。在基础材料和隧道屏障层之上制造台面，并具有底切形状。在台面的顶部制造欧姆接触，并且在轻掺杂的基础材料和隧道势垒的层之上制造一个或多个栅极肖特基接触。当栅极耗尽时，源极电压被设置为零，漏极电压被设定为小于0.1，栅极电压被设定为负值，就会产生量子点。耗尽区朝向器件的中心扩展，并形成量子阱的侧向约束，其中获得量子点。因为量子点的尺寸如此之小，所以实现的库仑充电能够足够大以使器件在室温下工作。

9. 发明申请

US20090017929A1 Laser beam method and system for golfer alignment 有权
标题翻译：激光束法和高尔夫球对准系统
公开(公告)号：US20090017929A1
公开(公告)日：2009-01-15
申请号：US11827327
申请日：2007-07-11
申请人： Yaohui Zhang
发明人： Yaohui Zhang
IPC分类号： A63B69/36
CPC分类号： A63B69/36 , A63B69/3608 , A63B69/3614 , A63B69/3667 , A63B2071/0694 , A63B2209/10
摘要： An improved static alignment and an improved dynamic alignment are combined in a laser beam method and system that provides instantaneous and continuous information feedback to a golfer to allow the real time correction of defects arising from a golfer's stance, head movement, body movement, golf club alignment, and golf club swing.
摘要翻译：改进的静态对准和改进的动态对准在激光束方法和系统中组合，其向高尔夫球手提供瞬时和连续的信息反馈，以允许实时校正由高尔夫球手的姿态，头部运动，身体运动，高尔夫球杆对齐和高尔夫球杆摆动。

10. 发明授权

US5657294A Short window norm optimization for multi-source multi-component seismic data 失效
标题翻译：多源多分量地震数据的短窗范数优化
公开(公告)号：US5657294A
公开(公告)日：1997-08-12
申请号：US533079
申请日：1995-09-25
申请人： Yaohui Zhang
发明人： Yaohui Zhang
IPC分类号： G01V1/28
CPC分类号： G01V1/284
摘要： A method for processing multi-source multi-component shear wave seismic data. The method comprises the steps of: acquiring four component shear wave seismic data; converting the data into a matrix that is a function of an angles of rotation relative to a reference axis; computing a time independent norm of the elements of the matrix; and finding the angles of rotation where the difference between the sum of the norms of the in-line elements and the sum of the norms of the cross-line elements is maximized.
摘要翻译：一种多源多分量剪切波地震数据处理方法。该方法包括以下步骤：获取四分量剪切波地震数据; 将数据转换成相对于参考轴线的旋转角度的函数的矩阵; 计算矩阵元素的时间独立范数; 并且找到旋转角度，其中在线元素的范数之和与交叉线元素的范数的和之间的差最大化。

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