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1. 发明授权

US08395934B2 Phase-change memory device 有权
标题翻译：相变存储器件
公开(公告)号：US08395934B2
公开(公告)日：2013-03-12
申请号：US12828122
申请日：2010-06-30
申请人： Yoon Jae Shin
发明人： Yoon Jae Shin
IPC分类号： G11C11/21
CPC分类号： G11C5/14 , G11C13/0004 , G11C13/0038 , G11C13/004 , G11C13/0061
摘要： A phase-change memory device includes: a cell array including at least one unit cell; a current sensing unit sensing data stored in the at least one unit cell; and a power generation circuit supplying a power source voltage to the current sensing unit, in which the power generation circuit is activated while the current sensing unit is performing a sensing operation.
摘要翻译：相变存储器件包括：包括至少一个单元的单元阵列; 感测存储在所述至少一个单位单元中的数据的电流感测单元; 以及向电流感测单元供给电源电压的发电电路，其中在电流感测单元正在进行感测操作时，发电电路被激活。

2. 发明申请

US20120081175A1 INTERNAL VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR APPARATUS USING THE SAME 有权
标题翻译：内部电压发生电路和半导体装置
公开(公告)号：US20120081175A1
公开(公告)日：2012-04-05
申请号：US12983148
申请日：2010-12-31
申请人： Yoon Jae SHIN
发明人： Yoon Jae SHIN
IPC分类号： G05F1/10
CPC分类号： G11C5/145
摘要： An internal voltage generation circuit includes a voltage detection unit configured to generate a voltage detection signal that indicates whether a voltage level of an internal voltage is a first target voltage level or a second target voltage level higher than the first target voltage level, according to control of a normal operation signal. The internal voltage generation circuit also includes an operation control signal generation unit configured to selectively activate an operation control signal in response to the normal operation signal and the voltage detection signal, a periodic pulse signal generation unit configured to generate a periodic pulse signal in response to the operation control signal and the normal operation signal, and a charge pumping unit configured to generate an internal voltage by performing a charge pumping operation according to control of the periodic pulse signal.
摘要翻译：内部电压产生电路包括：电压检测单元，被配置为根据控制产生指示内部电压的电压电平是否是第一目标电压电平还是比第一目标电压电平高的第二目标电压电平的电压检测信号的正常操作信号。内部电压产生电路还包括：操作控制信号生成单元，被配置为响应于正常操作信号和电压检测信号选择性地激活操作控制信号;周期性脉冲信号生成单元，被配置为响应于操作控制信号和正常操作信号;以及电荷泵送单元，被配置为通过根据周期脉冲信号的控制执行电荷泵送操作来产生内部电压。

3. 发明授权

US08036062B2 Semiconductor memory device and method for driving the same 有权
标题翻译：半导体存储器件及其驱动方法
公开(公告)号：US08036062B2
公开(公告)日：2011-10-11
申请号：US12724088
申请日：2010-03-15
申请人： Kyoung-Nam Kim , Yoon-Jae Shin
发明人： Kyoung-Nam Kim , Yoon-Jae Shin
IPC分类号： G11C8/00
CPC分类号： G11C7/22 , G11C7/02 , G11C7/222
摘要： A semiconductor memory device includes: a modulation controller for generating a modulation control signal for controlling a frequency modulation operation; a delay locked loop (DLL) circuit for performing a delay locking operation to generate first and second DLL clocks and outputting a frequency-modulated DLL clock in response to the modulation control signal; and a data strobe signal generator for outputting the frequency-modulated DLL clock as a data strobe signal.
摘要翻译：半导体存储器件包括：调制控制器，用于产生用于控制频率调制操作的调制控制信号; 延迟锁定环（DLL）电路，用于执行延迟锁定操作以产生第一和第二DLL时钟并响应于调制控制信号输出调频DLL时钟; 以及数据选通信号发生器，用于输出调频DLL时钟作为数据选通信号。

4. 发明授权

US07916566B2 Voltage control apparatus and method of controlling voltage using the same 有权
标题翻译：电压控制装置及使用该电压控制装置的电压控制方法
公开(公告)号：US07916566B2
公开(公告)日：2011-03-29
申请号：US12364670
申请日：2009-02-03
申请人： Jun-Gi Choi , Yoon-Jae Shin
发明人： Jun-Gi Choi , Yoon-Jae Shin
IPC分类号： G11C7/00
CPC分类号： G11C29/12 , G11C11/401 , G11C11/4074 , G11C2029/1202
摘要： A voltage control apparatus and a method of controlling a voltage using the same. A voltage control apparatus includes a signal generator configured to output a burn-in control signal and a burn-in precharge signal in response to an all bank precharge command, and a voltage controller configured to supply either a first voltage or a second voltage lower than the first voltage to a word line in response to the burn-in control signal and the burn-in precharge signal.
摘要翻译：电压控制装置及使用该电压控制装置的电压的控制方法。一种电压控制装置，包括：信号发生器，被配置为响应于全部分组预充电命令输出老化控制信号和老化预充电信号;以及电压控制器，被配置为将第一电压或第二电压响应于老化控制信号和老化预充电信号到字线的第一电压。

5. 发明授权

US07816977B2 Core voltage generator 有权
标题翻译：核心电压发生器
公开(公告)号：US07816977B2
公开(公告)日：2010-10-19
申请号：US12164972
申请日：2008-06-30
申请人： Yoon-Jae Shin
发明人： Yoon-Jae Shin
IPC分类号： G05F1/10
CPC分类号： G05F1/56
摘要： Core voltage generator including a comparison unit configured to compare a reference voltage with a feedback core voltage to output a difference between the reference voltage and the feedback core voltage, an amplification unit configured to output a core voltage by amplifying an external power supply voltage according to an output signal of the comparison unit and a mute unit configured to maintain a voltage level of an output terminal of the amplification unit at a ground voltage level when the output of the core voltage is interrupted.
摘要翻译：核心电压发生器，包括：比较单元，被配置为将参考电压与反馈核心电压进行比较，以输出参考电压和反馈核心电压之间的差;放大单元，被配置为通过放大外部电源电压来输出核心电压，所述比较单元的输出信号和静音单元被配置为当所述核心电压的输出被中断时，将所述放大单元的输出端子的电压电平维持在接地电压电平。

6. 发明申请

US20100259974A1 NON-VOLATILE SEMICONDUCTOR MEMORY CIRCUIT 有权
标题翻译：非易失性半导体存储器电路
公开(公告)号：US20100259974A1
公开(公告)日：2010-10-14
申请号：US12494555
申请日：2009-06-30
申请人： Yoon Jae SHIN , Dong Keun KIM
发明人： Yoon Jae SHIN , Dong Keun KIM
IPC分类号： G11C11/00 , G11C7/02
CPC分类号： G11C5/147 , G11C7/1006 , G11C7/1078 , G11C7/1096 , G11C13/0004 , G11C13/0064 , G11C13/0069
摘要： Disclosed is a non-volatile semiconductor memory circuit. The non-volatile semiconductor memory circuit a memory cell array, and a verification sense amplifier controller configured to control switching devices, which receive external input data, depending on a level of the input data such that distribution voltage is changed when controlling a write operation by comparing the input data with cell data written in the memory cell array so as to provide cell data.
摘要翻译：公开了一种非易失性半导体存储器电路。非易失性半导体存储器电路，存储单元阵列，以及验证读出放大器控制器，被配置为根据输入数据的电平来控制接收外部输入数据的开关器件，从而当控制写入操作时分配电压发生变化将输入数据与写入存储单元阵列中的单元数据进行比较，以便提供单元数据。

7. 发明授权

US07661879B2 Apparatus for detecting temperature using transistors 有权
标题翻译：使用晶体管检测温度的装置
公开(公告)号：US07661879B2
公开(公告)日：2010-02-16
申请号：US11584651
申请日：2006-10-23
申请人： Yoon-Jae Shin , Sang-Jin Byun
发明人： Yoon-Jae Shin , Sang-Jin Byun
IPC分类号： G01K7/01
CPC分类号： G01K7/015 , G01K1/026
摘要： An apparatus for detecting a temperature using transistors includes a plurality of temperature detecting units that become selectively active according to predetermined temperature intervals; and a detection signal output unit that generates detection signals according to the signals transmitted by the plurality of temperature detecting units, and outputs the detection signals.
摘要翻译：使用晶体管检测温度的装置包括多个温度检测单元，其根据预定的温度间隔变得有选择地活动; 以及检测信号输出单元，其根据由多个温度检测单元发送的信号产生检测信号，并输出检测信号。

8. 发明申请

US20080304335A1 Semiconductor memory device including apparatus for detecting threshold voltage 失效
标题翻译：半导体存储器件包括用于检测阈值电压的装置
公开(公告)号：US20080304335A1
公开(公告)日：2008-12-11
申请号：US12003675
申请日：2007-12-31
申请人： Yoon-Jae Shin , Jun-Gi Choi
发明人： Yoon-Jae Shin , Jun-Gi Choi
IPC分类号： G11C7/12
CPC分类号： G11C11/4074 , G11C5/145
摘要： A semiconductor device including a threshold voltage detector and a boosted voltage generating unit. The threshold voltage detector detects a threshold voltage level of cell transistors and outputs a detected threshold voltage level. The boosted voltage generating unit changes a target level of a boosted voltage in response to the detected threshold voltage level. The threshold voltage detector includes a detected current generating unit and a detected voltage generating unit. The detected current generating unit has a plurality of cell transistors in a cell array and generates a detected current whose amplitude varies corresponding to an average level of the threshold voltages of the cell transistors. The detected voltage generating unit generates the detected threshold voltage level whose level is determined corresponding to the amplitude of the detected current.
摘要翻译：一种包括阈值电压检测器和升压电压产生单元的半导体器件。阈值电压检测器检测单元晶体管的阈值电压电平，并输出检测到的阈值电压电平。升压电压发生单元响应于检测到的阈值电压电平而改变升压电压的目标电平。阈值电压检测器包括检测电流产生单元和检测电压产生单元。检测电流产生单元具有单元阵列中的多个单元晶体管，并产生其幅度根据单元晶体管的阈值电压的平均电平而变化的检测电流。检测电压产生单元产生检测到的阈值电压电平，其电平根据检测到的电流的幅度确定。

9. 发明申请

US20070285142A1 Apparatus for supplying voltage free from noise and method of operation the same 失效
标题翻译：用于提供无噪声电压的装置及其操作方法
公开(公告)号：US20070285142A1
公开(公告)日：2007-12-13
申请号：US11647486
申请日：2006-12-29
申请人： Yoon Jae Shin , Jun Gi Choi
发明人： Yoon Jae Shin , Jun Gi Choi
IPC分类号： H03K3/356
CPC分类号： H03K17/145 , H03K19/00384 , Y10T307/696
摘要： A voltage supply apparatus includes a power noise sensing unit, a voltage selecting unit, a first power voltage supply unit and a second power voltage supply unit. The power noise sensing unit senses noise from first and second powers and outputs a power noise sensing signal. The voltage selecting unit outputs first and second driving signals in response to a voltage-supply-enable-signal and the power noise sensing signal. The first power voltage supply unit applies a voltage of the first power in response to the first and second driving signals. The second power voltage supply unit applies a voltage of the second power in response to the first and second driving signals.
摘要翻译：电压供给装置包括电源噪声检测单元，电压选择单元，第一电源电压单元和第二电源电压单元。功率噪声感测单元感测来自第一和第二功率的噪声，并输出功率噪声感测信号。电压选择单元响应于电压供应使能信号和功率噪声感测信号输出第一和第二驱动信号。第一电源电压单元响应于第一和第二驱动信号施加第一功率的电压。第二电源电压单元响应于第一和第二驱动信号施加第二功率的电压。

10. 发明申请

US20070200616A1 Band-gap reference voltage generating circuit 审中-公开
标题翻译：带隙基准电压发生电路
公开(公告)号：US20070200616A1
公开(公告)日：2007-08-30
申请号：US11637924
申请日：2006-12-13
申请人： Yoon-Jae Shin
发明人： Yoon-Jae Shin
IPC分类号： G05F1/10 , G05F3/02
CPC分类号： G05F3/30
摘要： A band-gap reference voltage generating apparatus is disclosed. The band-gap reference voltage generating apparatus according to the present invention includes an operational amplifier unit that is driven by a bias voltage and outputs an operational amplifying signal using a first voltage and a second voltage as input voltages; a voltage generating unit that generates the first voltage and the second voltage in response to the operational amplifying signal; a reference voltage generating unit that outputs a reference voltage in response to the operational amplifying signal; and a unit that feedbacks the reference voltage to generate as the bias voltage.
摘要翻译：公开了一种带隙基准电压产生装置。根据本发明的带隙基准电压产生装置包括由偏压驱动的运算放大器单元，并使用第一电压和第二电压作为输入电压输出运算放大信号; 电压产生单元，其响应于所述运算放大信号而产生所述第一电压和所述第二电压; 参考电压产生单元，其响应于所述运算放大信号输出参考电压; 以及反馈参考电压以产生作为偏置电压的单元。

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