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    • 8. 发明授权
    • Flash memory device with external high voltage supply
    • 具有外部高压电源的闪存设备
    • US07626882B2
    • 2009-12-01
    • US11613383
    • 2006-12-20
    • Nian YangYonggang WuAaron LeeWei Daisy Cai
    • Nian YangYonggang WuAaron LeeWei Daisy Cai
    • G11C5/14
    • G11C16/12
    • A semiconductor memory device (104) selectably connectable to an external high voltage power supply (122) is provided. The semiconductor memory device (104) includes a switch (314), a detector (316) and a timing device (318). The switch (314) is connected to external voltage supply signals and selectably couples the external voltage supply signals to memory cells (305) of the semiconductor memory device (104) for memory operations thereof. The external voltage supply signals including a high voltage signal (412) provided from the external high voltage power supply (122) and an operational voltage signal Vcc (402). The detector (316) is connected to the external voltage supply signals for generating a timer activation signal (404) in response to detecting an operational voltage power-on period. The timing device (318) signals the switch (314) to decouple the high voltage signal (412) and the operational voltage signal (402) from the memory cells (305) in response to the timer activation signal (404) and to recouple the high voltage signal (412) and the operational voltage signal (402) to the memory cells (305) a time delay interval thereafter. The time delay interval is determined in response to the high voltage signal (412).
    • 提供可选择地连接到外部高压电源(122)的半导体存储器件(104)。 半导体存储器件(104)包括开关(314),检测器(316)和定时装置(318)。 开关(314)连接到外部电压源信号,并且可选择地将外部电压供应信号耦合到半导体存储器件(104)的存储单元(305),用于存储器操作。 包括从外部高压电源(122)提供的高电压信号(412)的外部电压供给信号和操作电压信号Vcc(402)。 检测器(316)连接到外部电压源信号,以响应于检测到工作电压通电周期而产生定时器激活信号(404)。 定时装置(318)响应于定时器启动信号(404),向开关314通知高压信号412和操作电压信号402与存储单元305的耦合, 高电压信号(412)和操作电压信号(402)到其后的时间延迟区间。 响应于高电压信号确定时间延迟间隔(412)。