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    • 3. 发明申请
    • METHOD FOR MANUFACTURING HYDROGEN SENSORS USING Pd NANO WIRE
    • 使用Pd纳米线制造氢传感器的方法
    • US20100096071A1
    • 2010-04-22
    • US11959959
    • 2007-12-19
    • Woo Young LEEKye Jin JEONEun Song Yi LEE
    • Woo Young LEEKye Jin JEONEun Song Yi LEE
    • H05K3/00C23C14/34
    • G01N33/005B82Y15/00
    • Disclosed is a method for manufacturing a hydrogen sensor using Pd nano-wires. The method includes steps of forming an external electrode pattern on a substrate applying a first resin layer to the substrate and forming a resin layer nano-channel pattern; depositing Pd on the substrate having the nano-channel pattern, by sputtering, and removing the first resin layer to form Pd nano-wires; applying a second resin layer to the substrate having the Pd nano-wires, and forming a resin layer pattern on the external electrode pattern, at opposing ends of the Pd nano-wires, and at predetermined positions between the external electrode pattern and the opposing ends of the Pd nano-wires; and depositing conductive metal on the resin layer pattern and removing the resin layer pattern, thereby electrically connecting the external electrode pattern to the Pd nano-wires.
    • 公开了使用Pd纳米线制造氢传感器的方法。 该方法包括以下步骤:在基板上施加第一树脂层并形成树脂层纳米通道图案的基板上形成外部电极图案; 通过溅射在具有纳米通道图案的衬底上沉积Pd并除去第一树脂层以形成Pd纳米线; 在具有Pd纳米线的基板上施加第二树脂层,在外部电极图案上形成树脂层图案,在Pd纳米线的相对端,并且在外部电极图案和相对端之间的预定位置 的Pd纳米线; 并在树脂层图案上沉积导电金属并除去树脂层图案,从而将外部电极图案电连接到Pd纳米线。
    • 4. 发明申请
    • SEMICONDUCTOR DEVICE GENERATING VARIED INTERNAL VOLTAGES
    • 产生不同内部电压的半导体器件
    • US20090206914A1
    • 2009-08-20
    • US12205975
    • 2008-09-08
    • Dong Hoon HANWoo Young LEE
    • Dong Hoon HANWoo Young LEE
    • G05F1/10
    • H02M3/073G05F1/465
    • The present invention describes a semiconductor device that generates internal voltages having different levels using an external voltage. The semiconductor device includes a plurality of asynchronous internal voltage generating circuits that share an external voltage source and generate internal voltages having different levels from one another. The plurality of asynchronous internal voltage generating circuits maintain the levels of the internal voltages at target levels by using the external voltage at different time points, respectively. The semiconductor device minimizes noise in the external voltage according to the use of the internal voltages.
    • 本发明描述了使用外部电压产生具有不同电平的内部电压的半导体器件。 半导体器件包括多个异步内部电压产生电路,其共享外部电压源并产生彼此具有不同电平的内部电压。 多个异步内部电压产生电路通过分别在不同时间点使用外部电压来将内部电压的电平分别保持在目标电平。 根据内部电压的使用,半导体器件使外部电压的噪声最小化。