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1. 发明授权

US07063986B2 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based device 失效
标题翻译：通过等离子体增强分子束外延和基于铁磁半导体的器件生长的室温铁磁半导体
公开(公告)号：US07063986B2
公开(公告)日：2006-06-20
申请号：US10910745
申请日：2004-08-03
申请人： Woo Young Lee , Suk Hee Han , Joon Yeon Chang , Hi Jung Kim , Jung Mi Lee , Jae Min Myoung
发明人： Woo Young Lee , Suk Hee Han , Joon Yeon Chang , Hi Jung Kim , Jung Mi Lee , Jae Min Myoung
IPC分类号： H01L21/302
CPC分类号： B82Y25/00 , B82Y40/00 , H01F1/404 , H01F10/193 , H01F10/3213 , H01F41/30 , H01L21/0242 , H01L21/0254 , H01L21/02543 , H01L21/02573 , H01L21/02581 , H01L21/0262 , H01L21/02631 , H01L29/66984 , H01L33/40 , H01L43/08 , H01L43/10
摘要： A 3 group–5 group compound ferromagnetic semiconductor, comprising one material ‘A’ selected from the group of Ga, Al and In and one material ‘B’ selected from the group consisting of N and P, wherein one material ‘C’ selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material ‘A’, the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.
摘要翻译：包含选自Ga，Al和In的一种材料“A”和选自N和P的一种材料“B”的3组5族化合物铁磁半导体，其中一种选自掺杂有Mn，Mg，Co，Fe，Ni，Cr和V的组合作为材料“A”的材料被掺杂，化合物半导体整体上具有单相。铁磁半导体可以通过等离子体增强分子束外延生长方法制造，并且由于其显示室温下的铁磁特性，因此可以用作各种自旋电子器件。

2. 发明授权

US07084468B2 Hybrid ferromagnet/semiconductor spin device and fabrication method therof 失效
标题翻译：混合铁磁体/半导体自旋器件及其制造方法
公开(公告)号：US07084468B2
公开(公告)日：2006-08-01
申请号：US10801744
申请日：2004-03-15
申请人： Woo Young Lee , Suk Hee Han , Joon Yeon Chang , Hi Jung Kim , Han Joo Lee , Woong Jun Hwang , Moo Whan Shin , Young Keun Kim
发明人： Woo Young Lee , Suk Hee Han , Joon Yeon Chang , Hi Jung Kim , Han Joo Lee , Woong Jun Hwang , Moo Whan Shin , Young Keun Kim
IPC分类号： G11B5/39
CPC分类号： H01F10/1936 , B82Y25/00 , B82Y40/00 , H01F10/193 , H01F41/308 , H01L29/66984
摘要： Disclosed are a spin injection device applicable as a memory and a logical device using a spin valve effect obtained by injecting a carrier spin-polarized from a ferromagnet into a semiconductor at an ordinary temperature, and a spin-polarized field effect transistor.
摘要翻译：公开了适用于作为存储器的自旋注入装置和使用通过将从铁磁体自旋极化的载流子注入到常温下的半导体中而获得的自旋阀效应的自旋注入装置和自旋极化场效应晶体管。

3. 发明授权

US07095070B2 Method for fabricating Bi thin film and device using the same 有权
标题翻译：制造Bi薄膜的方法及使用其的装置
公开(公告)号：US07095070B2
公开(公告)日：2006-08-22
申请号：US10798447
申请日：2004-03-12
申请人： Woo Young Lee , Kyung Ho Shin , Suk Hee Han , Joon Yeon Chang , Hi Jung Kim , Dal Young Kim , Kwan Hyi Lee , Kyoung Il Lee , Min Hong Jeun
发明人： Woo Young Lee , Kyung Ho Shin , Suk Hee Han , Joon Yeon Chang , Hi Jung Kim , Dal Young Kim , Kwan Hyi Lee , Kyoung Il Lee , Min Hong Jeun
IPC分类号： H01L31/062 , H01L21/00
CPC分类号： H01F10/1936 , C25D3/54 , C25D5/50 , G11C11/14 , H01F1/401 , H01F41/18 , H01F41/26 , H01L43/12
摘要： In a method for fabricating a Bi thin film having a great MR (magnetoresistance) at room temperature and a method for fabricating a spintronics device using the same, the Bi thin film is fabricated by an electrodepostiting method and a sputtering method and has very great MR characteristics at room temperature, and it can be applied to various spintronics devices.
摘要翻译：在室温下具有大的MR（磁阻）的Bi薄膜的制造方法以及使用该Bi薄膜的自旋电子学装置的制造方法中，Bi薄膜通过电沉积法和溅射法制造，具有非常大的MR 在室温下的特性，并且可以应用于各种自旋电子器件。

4. 发明授权

US08421060B2 Reconfigurable logic device using spin accumulation and diffusion 有权
标题翻译：可重构逻辑器件使用自旋积累和扩散
公开(公告)号：US08421060B2
公开(公告)日：2013-04-16
申请号：US12684586
申请日：2010-01-08
申请人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jang Hae Ku
发明人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jang Hae Ku
IPC分类号： H01L29/82 , H01L29/66
CPC分类号： H01L29/66984 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L29/0665 , H01L29/1606 , H01L29/7783
摘要： A logic device includes: a substrate having a channel layer; two input terminal patterns of ferromagnetic material formed on the substrate and spaced apart from each other along a longitudinal direction of the channel layer so as to serve as the input terminals of a logic gate; and an output terminal pattern of ferromagnetic material formed on the substrate and disposed between the two input terminal patterns to serve as an output terminal of the logic gate. The output terminal pattern reads an output voltage by using spin accumulation and diffusion of electron spins which are injected into the channel layer from the input terminal patterns.
摘要翻译：逻辑器件包括：具有沟道层的衬底; 铁磁材料的两个输入端子图案形成在基板上并且沿着沟道层的纵向方向彼此间隔开，以便用作逻辑门的输入端; 以及形成在所述基板上并且设置在所述两个输入端子图案之间以用作所述逻辑门的输出端子的铁磁材料的输出端子图案。输出端子图案通过使用从输入端子图案注入到沟道层中的电子自旋的自旋累积和扩散来读取输出电压。

5. 发明授权

US07307299B2 Spin transistor using spin-orbit coupling induced magnetic field 有权
公开(公告)号：US07307299B2
公开(公告)日：2007-12-11
申请号：US11305500
申请日：2005-12-15
申请人： Hyun Cheol Koo , Suk Hee Han , Jong Hwa Eom , Joon Yeon Chang , Hyun Jung Yi
发明人： Hyun Cheol Koo , Suk Hee Han , Jong Hwa Eom , Joon Yeon Chang , Hyun Jung Yi
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66984 , H01F1/404 , H01F10/193 , H01L29/0843 , H01L29/772
摘要： A spin transistor having wide ON/OFF operation margin and producing less noise is provided. The spin transistor includes a substrate having a channel, a source, a drain and a gate formed on the substrate. The source and the drain are formed to have magnetization directions perpendicular to the length direction of the channel. The ON/OFF operations of the spin transistor can be controlled by generating a spin-orbit coupling induced magnetic field to have a direction parallel or anti-parallel to the magnetization directions of the source and the drain.

6. 发明申请

US20110279146A1 COMPLEMENTARY SPIN TRANSISTOR LOGIC CIRCUIT 有权
标题翻译：补充旋转晶体管逻辑电路
公开(公告)号：US20110279146A1
公开(公告)日：2011-11-17
申请号：US12899778
申请日：2010-10-07
申请人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jun Woo Choi
发明人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jun Woo Choi
IPC分类号： H03K19/091
CPC分类号： H03K19/091 , B82Y10/00 , G11C11/16 , H03K19/18
摘要： There is provided a complementary spin transistor logic circuit, including: a parallel spin transistor that includes a magnetized first source, a first drain magnetized in parallel with the magnetization direction of the first source, a first channel layer and a first gate electrode; and an anti-parallel spin transistor that includes a magnetized second source, a second drain magnetized in anti-parallel with the magnetization direction of the second source, a second channel layer and a second gate electrode, wherein the first gate electrode and the second gate electrode are connected to a common input terminal.
摘要翻译：提供了一种互补自旋晶体管逻辑电路，包括：并联自旋晶体管，其包括磁化的第一源，与第一源的磁化方向平行磁化的第一漏极，第一沟道层和第一栅电极; 以及反并联自旋晶体管，其包括磁化的第二源极，与所述第二源极的磁化方向反并联的第二漏极，第二沟道层和第二栅电极，其中所述第一栅电极和所述第二栅极电极连接到公共输入端子。

7. 发明申请

US20110042648A1 RECONFIGURABLE LOGIC DEVICE USING SPIN ACCUMULATION AND DIFFUSION 有权
标题翻译：使用旋转累积和扩展的可重构逻辑器件
公开(公告)号：US20110042648A1
公开(公告)日：2011-02-24
申请号：US12684586
申请日：2010-01-08
申请人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jang Hae Ku
发明人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jang Hae Ku
IPC分类号： H01L29/82 , H01L29/66
CPC分类号： H01L29/66984 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L29/0665 , H01L29/1606 , H01L29/7783
摘要： A logic device includes: a substrate having a channel layer; two input terminal patterns of ferromagnetic material formed on the substrate and spaced apart from each other along a longitudinal direction of the channel layer so as to serve as the input terminals of a logic gate; and an output terminal pattern of ferromagnetic material formed on the substrate and disposed between the two input terminal patterns to serve as an output terminal of the logic gate. The output terminal pattern reads an output voltage by using spin accumulation and diffusion of electron spins which are injected into the channel layer from the input terminal patterns.
摘要翻译：逻辑器件包括：具有沟道层的衬底; 铁磁材料的两个输入端子图案形成在基板上并且沿着沟道层的纵向方向彼此间隔开，以便用作逻辑门的输入端; 以及形成在所述基板上并且设置在所述两个输入端子图案之间以用作所述逻辑门的输出端子的铁磁材料的输出端子图案。输出端子图案通过使用从输入端子图案注入到沟道层中的电子自旋的自旋累积和扩散来读取输出电压。

8. 发明授权

US07839675B2 Magnetic memory device and method for reading magnetic memory cell using spin hall effect 有权
标题翻译：磁记忆装置及使用旋转厅效应读磁记忆体的方法
公开(公告)号：US07839675B2
公开(公告)日：2010-11-23
申请号：US12360964
申请日：2009-01-28
申请人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim
发明人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim
IPC分类号： G11C11/18 , G11C11/00 , G11C11/14
CPC分类号： H01L43/065 , G11C11/161 , G11C11/1673 , G11C11/18 , H01L27/226 , H01L29/66462 , H01L29/7781
摘要： A magnetic memory device includes a substrate for reading and a magnetic memory cell. The substrate has a channel layer. The magnetic memory cell is formed on the substrate and has a magnetized magnetic material that transfers spin data to electrons passing the channel layer. Data stored in the magnetic memory cell are read by a voltage across both side ends of the channel layer that is generated when the electrons passing the channel layer deviate in the widthwise direction of the channel layer by a spin Hall effect.
摘要翻译：磁存储器件包括用于读取的衬底和磁存储单元。衬底具有通道层。磁性存储单元形成在基板上，并具有将自旋数据传送到通过沟道层的电子的磁化磁性材料。存储在磁存储单元中的数据被通过通道沟道层的电子通过沟道层的宽度方向偏离旋转霍尔效应而产生的沟道层的两侧端的电压读取。

9. 发明授权

US07608901B2 Spin transistor using stray magnetic field 失效
标题翻译：旋转晶体管使用杂散磁场
公开(公告)号：US07608901B2
公开(公告)日：2009-10-27
申请号：US11777228
申请日：2007-07-12
申请人： Hyun Cheol Koo , Jong Hwa Eom , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim
发明人： Hyun Cheol Koo , Jong Hwa Eom , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim
IPC分类号： H01L29/72
CPC分类号： H01L29/66984 , G11C11/16 , H01L29/0843 , Y10S257/902 , Y10S977/933
摘要： Disclosed herein is a spin transistor including: a semiconductor substrate having a channel layer formed therein; first and second electrodes which are formed to be spaced apart from each other on the substrate at a predetermined distance along a longitudinal direction of the channel layer; a source and drain which include magnetized ferromagnetic materials and are formed to be spaced apart form each other between the first electrode and the second electrode at a predetermined distance along the longitudinal direction of the channel layer; and a gate which is formed on the substrate between the source and the drain, and adjusts spin orientations of electrons passing through the channel layer, wherein the electrons passing through the channel layer are spin-aligned at a lower side of the source by a stray magnetic field of the source and spin-filtered at a lower side of the drain by a stray field of the drain.
摘要翻译：本文公开了一种自旋晶体管，包括：其中形成有沟道层的半导体衬底; 第一和第二电极，沿着沟道层的纵向以预定的距离形成在衬底上彼此间隔开; 源极和漏极，其包括磁化铁磁材料，并且沿着沟道层的纵向方向以预定的距离在第一电极和第二电极之间彼此间隔开形成间隔开的源极和漏极; 以及形成在源极和漏极之间的衬底上的栅极，并且调节通过沟道层的电子的自旋取向，其中通过沟道层的电子通过杂散在源的较低侧自旋对准源极的磁场，并通过漏极的杂散场在漏极的下侧进行自旋滤波。

10. 发明授权

US08125247B2 Complementary spin transistor logic circuit 有权
标题翻译：互补自旋晶体管逻辑电路
公开(公告)号：US08125247B2
公开(公告)日：2012-02-28
申请号：US12899778
申请日：2010-10-07
申请人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jun Woo Choi
发明人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jun Woo Choi
IPC分类号： H03K19/091 , H01L21/02
CPC分类号： H03K19/091 , B82Y10/00 , G11C11/16 , H03K19/18
摘要： There is provided a complementary spin transistor logic circuit, including: a parallel spin transistor that includes a magnetized first source, a first drain magnetized in parallel with the magnetization direction of the first source, a first channel layer and a first gate electrode; and an anti-parallel spin transistor that includes a magnetized second source, a second drain magnetized in anti-parallel with the magnetization direction of the second source, a second channel layer and a second gate electrode, wherein the first gate electrode and the second gate electrode are connected to a common input terminal.
摘要翻译：提供了一种互补自旋晶体管逻辑电路，包括：并联自旋晶体管，其包括磁化的第一源，与第一源的磁化方向平行磁化的第一漏极，第一沟道层和第一栅电极; 以及反并联自旋晶体管，其包括磁化的第二源极，与所述第二源极的磁化方向反并联的第二漏极，第二沟道层和第二栅电极，其中所述第一栅电极和所述第二栅极电极连接到公共输入端子。

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