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1. 发明授权

US09704865B2 Semiconductor devices having silicide and methods of manufacturing the same 有权
公开(公告)号：US09704865B2
公开(公告)日：2017-07-11
申请号：US14969319
申请日：2015-12-15
申请人： Hyungjong Lee , Wei-Hua Hsu , Junggun You , Choongho Lee
发明人： Hyungjong Lee , Wei-Hua Hsu , Junggun You , Choongho Lee
IPC分类号： H01L27/092 , H01L29/423 , H01L23/532 , H01L23/535 , H01L21/8238
CPC分类号： H01L27/0924 , H01L21/823814 , H01L21/823821 , H01L21/823871 , H01L23/53209 , H01L23/535 , H01L29/0847 , H01L29/41783 , H01L29/42356 , H01L29/665 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor devices, having dual silicides, include a first fin, having N-type impurities, and a second fin, having P-type impurities, on a substrate. A first gate electrode and a first source/drain area are on the first fin. A second gate electrode and a second source/drain area are on the second fin. An etch stop layer is on the first source/drain area and the second source/drain area. An insulating layer is on the etch stop layer. A first plug connected to the first source/drain area and a second plug connected to the second source/drain area are formed through the insulating layer and the etch stop layer. A first metal silicide layer is in the first source/drain area. A second metal silicide layer having a material different from the first metal silicide layer and having a thickness smaller than the first metal silicide layer is in the second source/drain area.

2. 发明申请

US20080265256A1 MOS devices with improved source/drain regions with SiGe 有权
标题翻译：具有SiGe源极/漏极区域改善的MOS器件
公开(公告)号：US20080265256A1
公开(公告)日：2008-10-30
申请号：US11796369
申请日：2007-04-27
申请人： Chun-Chieh Lin , Wei-Hua Hsu , Yu-En Percy Chang , Chung Li Chang , Chi-Feng Cheng , Win Hung , Kishimoto Ko
发明人： Chun-Chieh Lin , Wei-Hua Hsu , Yu-En Percy Chang , Chung Li Chang , Chi-Feng Cheng , Win Hung , Kishimoto Ko
IPC分类号： H01L29/94
CPC分类号： H01L29/665 , H01L29/165 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7848
摘要： A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; a SiGe region in the semiconductor substrate and adjacent the gate stack, wherein the SiGe region has a first atomic percentage of germanium to germanium and silicon; and a silicide region over the SiGe region. The silicide region has a second atomic percentage of germanium to germanium and silicon. The second atomic percentage is substantially lower than the first atomic percentage.
摘要翻译：提供半导体结构及其形成方法。半导体结构包括半导体衬底; 半导体衬底上的栅极堆叠; SiGe区域，其中SiGe区域具有锗到锗和硅的第一原子百分比; 以及SiGe区域上的硅化物区域。硅化物区域具有锗与锗和硅的第二原子百分比。第二原子百分比基本上低于第一原子百分数。

3. 发明授权

US08569846B2 MOS devices with improved source/drain regions with SiGe 有权
标题翻译：具有SiGe源极/漏极区域改善的MOS器件
公开(公告)号：US08569846B2
公开(公告)日：2013-10-29
申请号：US13166481
申请日：2011-06-22
申请人： Chun-Chieh Lin , Wei-Hua Hsu , Yu-En Percy Chang , Chung Li Chang , Chi-Feng Cheng , Win Hung , Kishimoto Ko
发明人： Chun-Chieh Lin , Wei-Hua Hsu , Yu-En Percy Chang , Chung Li Chang , Chi-Feng Cheng , Win Hung , Kishimoto Ko
IPC分类号： H01L29/78
CPC分类号： H01L29/665 , H01L29/165 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7848
摘要： A method includes forming a gate stack over a semiconductor substrate, and forming a first silicon germanium (SiGe) region in the semiconductor substrate and adjacent the gate stack. The first SiGe region has a first atomic percentage of germanium to germanium and silicon. A second SiGe region is formed over the first SiGe region. The second SiGe region has a second atomic percentage of germanium to germanium and silicon. The second atomic percentage is lower than the first atomic percentage, wherein the first and the second SiGe regions form a source/drain stressor of a metal-oxide-semiconductor (MOS) device.
摘要翻译：一种方法包括在半导体衬底上形成栅叠层，并在半导体衬底中形成第一硅锗（SiGe）区，并邻近栅叠。第一个SiGe区域具有锗与锗和硅的第一原子百分比。在第一SiGe区域上形成第二SiGe区域。第二SiGe区域具有锗与锗和硅的第二原子百分比。第二原子百分比低于第一原子百分比，其中第一和第二SiGe区域形成金属氧化物半导体（MOS）器件的源极/漏极应力源。

4. 发明授权

US07157215B2 Photoresist with adjustable polarized light reaction and photolithography process using the photoresist 有权
标题翻译：具有可调偏光反应的光刻胶和使用光致抗蚀剂的光刻工艺
公开(公告)号：US07157215B2
公开(公告)日：2007-01-02
申请号：US10892751
申请日：2004-07-15
申请人： Shun-Li Lin , Wei-Hua Hsu
发明人： Shun-Li Lin , Wei-Hua Hsu
IPC分类号： G03F7/20 , G03F7/00 , G03F7/04
CPC分类号： G03F7/2006
摘要： A photoresist with adjustable polarized light response and a photolithography process using the photoresist. The photoresist and the photolithography process are suitable for use in an exposure optical system with a high numerical aperture. The photoresist includes a photosensitive polymer that can absorb the exposure light source to generate an optical reaction. The photosensitive polymer can also be oriented along a direction of an electric field or a magnetic field. The response for the photosensitive upon a polarized light is determined by an angle between the predetermined direction and the polarized light. In addition, the photolithography process adjusts the orientation of the photosensitive polymer, so that the P-polarized light has a weaker response than that of the S-polarized light to compensate for the larger transmission coefficient of the P-polarized light with a high numerical aperture, so as to prevent the photoresist pattern deformation.
摘要翻译：具有可调偏振光响应的光致抗蚀剂和使用光致抗蚀剂的光刻工艺。光致抗蚀剂和光刻工艺适用于具有高数值孔径的曝光光学系统。光致抗蚀剂包括可以吸收曝光光源以产生光学反应的光敏聚合物。感光性聚合物也可以沿着电场或磁场的方向取向。偏振光下的感光度的响应由预定方向和偏振光之间的角度确定。此外，光刻工艺调整光敏聚合物的取向，使得P偏振光的响应弱于S偏振光，以补偿具有高数值的P偏振光的较大透射系数孔径，以防止光致抗蚀剂图案变形。

5. 发明申请

US20110256681A1 MOS Devices with Improved Source/Drain Regions with SiGe 有权
标题翻译：具有SiGe改进源/漏区的MOS器件
公开(公告)号：US20110256681A1
公开(公告)日：2011-10-20
申请号：US13166481
申请日：2011-06-22
申请人： Chun-Chieh Lin , Wei-Hua Hsu , Yu-En Percy Chang , Chung Li Chang , Chi-Feng Cheng , Win Hung , Kishimoto Ko
发明人： Chun-Chieh Lin , Wei-Hua Hsu , Yu-En Percy Chang , Chung Li Chang , Chi-Feng Cheng , Win Hung , Kishimoto Ko
IPC分类号： H01L21/336
CPC分类号： H01L29/665 , H01L29/165 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7848
摘要： A method includes forming a gate stack over a semiconductor substrate, and forming a first silicon germanium (SiGe) region in the semiconductor substrate and adjacent the gate stack. The first SiGe region has a first atomic percentage of germanium to germanium and silicon. A second SiGe region is formed over the first SiGe region. The second SiGe region has a second atomic percentage of germanium to germanium and silicon. The second atomic percentage is lower than the first atomic percentage, wherein the first and the second SiGe regions form a source/drain stressor of a metal-oxide-semiconductor (MOS) device.
摘要翻译：一种方法包括在半导体衬底上形成栅叠层，并在半导体衬底中形成第一硅锗（SiGe）区，并邻近栅叠。第一个SiGe区域具有锗与锗和硅的第一原子百分比。在第一SiGe区域上形成第二SiGe区域。第二SiGe区域具有锗与锗和硅的第二原子百分比。第二原子百分比低于第一原子百分比，其中第一和第二SiGe区域形成金属氧化物半导体（MOS）器件的源极/漏极应力源。

6. 发明授权

US06576407B2 Method of improving astigmatism of a photoresist layer 有权
公开(公告)号：US06576407B2
公开(公告)日：2003-06-10
申请号：US09840996
申请日：2001-04-25
申请人： Shun-Li Lin , Wei-Hua Hsu
发明人： Shun-Li Lin , Wei-Hua Hsu
IPC分类号： G03F720
CPC分类号： G03F7/70566 , G03F7/2006
摘要： A photoresist layer comprising an optically active component is provided, so that after an incident linearly polarized light penetrates the photoresist layer, the intensity ratio of an S wave polarization and a P wave polarization divided from the linearly polarized light is effectively 1:1 so improving astigmatism.

7. 发明申请

US20160197074A1 SEMICONDUCTOR DEVICES HAVING SILICIDE AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：具有硅氧烷的半导体器件及其制造方法
公开(公告)号：US20160197074A1
公开(公告)日：2016-07-07
申请号：US14969319
申请日：2015-12-15
申请人： Hyungjong LEE , Wei-Hua HSU , Junggun YOU , Choongho LEE
发明人： Hyungjong LEE , Wei-Hua HSU , Junggun YOU , Choongho LEE
IPC分类号： H01L27/092 , H01L23/532 , H01L23/535 , H01L29/423
CPC分类号： H01L27/0924 , H01L21/823814 , H01L21/823821 , H01L21/823871 , H01L23/53209 , H01L23/535 , H01L29/0847 , H01L29/41783 , H01L29/42356 , H01L29/665 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor devices, having dual silicides, include a first fin, having N-type impurities, and a second fin, having P-type impurities, on a substrate. A first gate electrode and a first source/drain area are on the first fin. A second gate electrode and a second source/drain area are on the second fin. An etch stop layer is on the first source/drain area and the second source/drain area. An insulating layer is on the etch stop layer. A first plug connected to the first source/drain area and a second plug connected to the second source/drain area are formed through the insulating layer and the etch stop layer. A first metal silicide layer is in the first source/drain area. A second metal silicide layer having a material different from the first metal silicide layer and having a thickness smaller than the first metal silicide layer is in the second source/drain area.
摘要翻译：具有双重硅化物的半导体器件在衬底上包括具有N型杂质的第一鳍片和具有P型杂质的第二鳍片。第一栅极电极和第一源极/漏极区域在第一鳍片上。第二栅极电极和第二源极/漏极区域在第二鳍片上。蚀刻停止层位于第一源极/漏极区域和第二源极/漏极区域上。绝缘层位于蚀刻停止层上。连接到第一源极/漏极区域的第一插头和连接到第二源极/漏极区域的第二插头穿过绝缘层和蚀刻停止层。第一金属硅化物层位于第一源极/漏极区域中。具有不同于第一金属硅化物层并且具有小于第一金属硅化物层的厚度的材料的第二金属硅化物层位于第二源极/漏极区域中。

8. 发明授权

US07989901B2 MOS devices with improved source/drain regions with SiGe 有权
标题翻译：具有SiGe源极/漏极区域改善的MOS器件
公开(公告)号：US07989901B2
公开(公告)日：2011-08-02
申请号：US11796369
申请日：2007-04-27
申请人： Chun-Chieh Lin , Wei-Hua Hsu , Yu-En Percy Chang , Chung Li Chang , Chi-Feng Cheng , Win Hung , Kishimoto Ko
发明人： Chun-Chieh Lin , Wei-Hua Hsu , Yu-En Percy Chang , Chung Li Chang , Chi-Feng Cheng , Win Hung , Kishimoto Ko
IPC分类号： H01L29/78
CPC分类号： H01L29/665 , H01L29/165 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7848
摘要： A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; a SiGe region in the semiconductor substrate and adjacent the gate stack, wherein the SiGe region has a first atomic percentage of germanium to germanium and silicon; and a silicide region over the SiGe region. The silicide region has a second atomic percentage of germanium to germanium and silicon. The second atomic percentage is substantially lower than the first atomic percentage.
摘要翻译：提供半导体结构及其形成方法。半导体结构包括半导体衬底; 半导体衬底上的栅极堆叠; SiGe区域，其中SiGe区域具有锗到锗和硅的第一原子百分比; 以及SiGe区域上的硅化物区域。硅化物区域具有锗与锗和硅的第二原子百分比。第二原子百分比基本上低于第一原子百分数。

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