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1. 发明申请

US20070246794A1 Integrated circuit including power diode 有权
标题翻译：集成电路包括功率二极管
公开(公告)号：US20070246794A1
公开(公告)日：2007-10-25
申请号：US11821234
申请日：2007-06-22
申请人： Paul Chang , Geeng-Chuan Chern , Prognyan Ghosh , Wayne Hsueh , Vladimir Rodov
发明人： Paul Chang , Geeng-Chuan Chern , Prognyan Ghosh , Wayne Hsueh , Vladimir Rodov
IPC分类号： H01L29/00 , H01L21/76
CPC分类号： H01L27/0629 , H01L29/0692 , H01L29/78 , H01L29/861
摘要： A method of fabricating a semiconductor integrated circuit including a power diode includes providing a semiconductor substrate of first conductivity type, fabricating a integrated circuit such as a CMOS transistor circuit in a first region of the substrate, and fabricating a power diode in a second region in the semiconductor substrate. Dielectric material is formed between the first region and the second regions thereby providing electrical isolation between the integrated circuit in the first region and the power diode in the second region. The power diode can comprise a plurality of MOS source/drain elements and associated gate elements all connected together by one electrode of the diode, and a semiconductor layer in the second region can function as another source/drain of the power diode.
摘要翻译：一种制造包括功率二极管的半导体集成电路的方法包括提供第一导电类型的半导体衬底，在衬底的第一区域中制造诸如CMOS晶体管电路的集成电路，并且在第二区域中制造功率二极管半导体衬底。介电材料形成在第一区域和第二区域之间，从而在第一区域中的集成电路与第二区域中的功率二极管之间提供电隔离。功率二极管可以包括由二极管的一个电极连接在一起的多个MOS源极/漏极元件和相关联的栅极元件，并且第二区域中的半导体层可以用作功率二极管的另一个源极/漏极。

2. 发明申请

US20060157815A1 Integrated circuit including power diode 有权
标题翻译：集成电路包括功率二极管
公开(公告)号：US20060157815A1
公开(公告)日：2006-07-20
申请号：US11040180
申请日：2005-01-20
申请人： Paul Chang , Geeng-Chuan Chern , Prognyan Ghosh , Wayne Hsueh , Vladimir Rodov
发明人： Paul Chang , Geeng-Chuan Chern , Prognyan Ghosh , Wayne Hsueh , Vladimir Rodov
IPC分类号： H01L29/00
CPC分类号： H01L27/0629 , H01L29/0692 , H01L29/78 , H01L29/861
摘要： A method of fabricating a semiconductor integrated circuit including a power diode includes providing a semiconductor substrate of first conductivity type, fabricating a integrated circuit such as a CMOS transistor circuit in a first region of the substrate, and fabricating a power diode in a second region in the semiconductor substrate. Dielectric material is formed between the first region and the second regions thereby providing electrical isolation between the integrated circuit in the first region and the power diode in the second region. The power diode can comprise a plurality of MOS source/drain elements and associated gate elements all connected together by one electrode of the diode, and a semiconductor layer in the second region can function as another source/drain of the power diode.
摘要翻译：一种制造包括功率二极管的半导体集成电路的方法包括提供第一导电类型的半导体衬底，在衬底的第一区域中制造诸如CMOS晶体管电路的集成电路，并且在第二区域中制造功率二极管半导体衬底。介电材料形成在第一区域和第二区域之间，从而在第一区域中的集成电路与第二区域中的功率二极管之间提供电隔离。功率二极管可以包括由二极管的一个电极连接在一起的多个MOS源极/漏极元件和相关联的栅极元件，并且第二区域中的半导体层可以用作功率二极管的另一个源极/漏极。

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