专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5744972A Device and method to measure the complex permeability of thin films at ultra-high frequencies 失效
标题翻译：测量超高频薄膜复合磁导率的装置和方法
公开(公告)号：US5744972A
公开(公告)日：1998-04-28
申请号：US627638
申请日：1996-04-05
申请人： Vladislav Korenivski , Zhengxiang Ma , Paul Matthew Mankiewich , Paul Anthony Polakos , Robert Bruce van Dover
发明人： Vladislav Korenivski , Zhengxiang Ma , Paul Matthew Mankiewich , Paul Anthony Polakos , Robert Bruce van Dover
IPC分类号： G01R33/12 , G01N27/72
CPC分类号： G01R33/1223
摘要： The device has a single strip having a first end, a second end, a length and a width. The first end of the strip is curved toward the second end of the strip to form a loop having a height. The length is approximately 10 mm, the width is approximately 5-8 mm, and the height is approximately 0.8-1.2 mm. The loop is preferably fabricated from copper. The loop is mounted directly to a test instrument such as a computer controlled impedance analyzer or network analyzer. The test instrument measures the inductance and resistance of the loop with no thin film sample placed therein, and then measures the inductance and resistance of the loop containing the sample under test. From these measurements, the device ultimately derives the permeability of the sample under test. The method for measuring the complex permeability of thin films at ultra-high frequencies includes the steps of recording the residual inductance and resistance for the loop empty; measuring the total inductance and resistance for the loop loaded with the sample under test; determining the change in resistance by subtracting the resistance of the loop without any sample from the resistance when the loop is loaded with the sample under test; determining the change in inductance by subtracting the inductance of the loop without any sample from the inductance when the loop is loaded with the sample under test; and calculating permeability.
摘要翻译：该装置具有单条，其具有第一端，第二端，长度和宽度。条带的第一端朝向带的第二端弯曲以形成具有高度的环。长度约为10mm，宽度约为5-8mm，高度约为0.8-1.2mm。该环优选由铜制成。该回路直接安装在诸如计算机控制的阻抗分析仪或网络分析仪之类的测试仪器上。测试仪器测量没有薄膜样品的环路的电感和电阻，然后测量包含被测试样品的回路的电感和电阻。从这些测量中，该装置最终导出被测试样品的渗透性。用于测量超高频薄膜复合磁导率的方法包括记录剩余电感和电阻为空的步骤; 测量负载待测试样品的环路的总电感和电阻; 当环路装载被测试样品时，通过从电阻中减去没有任何样品的环路的电阻来确定电阻的变化; 当环路加载被测试样品时，通过从电感中减去没有任何样本的环路的电感来确定电感的变化; 并计算渗透率。

2. 发明授权

US07679155B2 Multiple magneto-resistance devices based on doped magnesium oxide 失效
标题翻译：基于掺杂氧化镁的多个磁阻器件
公开(公告)号：US07679155B2
公开(公告)日：2010-03-16
申请号：US12223534
申请日：2007-02-08
申请人： Vladislav Korenivski
发明人： Vladislav Korenivski
IPC分类号： H01L27/22 , H01L43/00 , H01L41/16
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/3254 , H01L43/08
摘要： The present invention provides a low resistance high magnetoresistance (MR) device comprised of a junction of two magnetic elements separated by a magnesium oxide (MgO) layer doped with such metals as Al and Li. Such device can be used as a sensor of magnetic field in magnetic recording or as a storage element in magnetic random access memory (MRAM). The invention provides a high-MR device possessing a diode function, comprised of a double junction of two outer magnetic elements separated by two MgO insulating layer and a center MgO layer doped with such metals as Al and Li. Such device provides design advantages when used as a storage element in MRAM. The invention with MR wherein a gate electrode is placed in electrical or physical contact to the center layer of the double tunnel junction.
摘要翻译：本发明提供了一种低电阻高磁阻（MR）器件，其包括由掺杂有诸如Al和Li的金属的氧化镁（MgO）层分离的两个磁性元件的接合部。这种装置可以用作磁记录中的磁场传感器或磁性随机存取存储器（MRAM）中的存储元件。本发明提供了具有二极管功能的高MR器件，由两个由两个MgO绝缘层隔开的两个外部磁性元件的双结和由Al和Li这样的金属掺杂的中心MgO层构成。当用作MRAM中的存储元件时，此类设备提供了设计优势。具有MR的本发明，其中栅电极与双隧道结的中心层电接触或物理接触。

3. 发明申请

US20080285323A1 Method and Arrangement for Associative Memory Device Based on Ferrofluid 失效
标题翻译：基于铁磁流体的联想记忆装置的方法与装置
公开(公告)号：US20080285323A1
公开(公告)日：2008-11-20
申请号：US12091829
申请日：2006-10-27
申请人： Vladislav Korenivski
发明人： Vladislav Korenivski
IPC分类号： G11C15/02 , G11C11/16
CPC分类号： G11C15/02 , B82Y10/00 , B82Y30/00 , G11C11/15 , G11C11/16 , G11C15/046 , G11C25/00
摘要： The present invention provides an associative memory device based on a ferromagnetic nano-colloid, or ferrofluid. The design comprises inductive input and output units for training the ferrofluid as well as sensors incorporated into the output units for performing recall.
摘要翻译：本发明提供了一种基于铁磁性纳米胶体或铁磁流体的联想存储器件。该设计包括用于训练铁磁流体的感应输入和输出单元以及并入输出单元中用于执行召回的传感器。

4. 发明授权

US5847634A Article comprising an inductive element with a magnetic thin film 失效
标题翻译：该文章包括具有磁性薄膜的电感元件
公开(公告)号：US5847634A
公开(公告)日：1998-12-08
申请号：US902686
申请日：1997-07-30
申请人： Vladislav Korenivski , Robert Bruce van Dover
发明人： Vladislav Korenivski , Robert Bruce van Dover
IPC分类号： H01F10/14 , H01F10/12 , H01F10/13 , H01F17/00 , H01F17/04 , H01F30/00 , H01L21/822 , H01L27/04 , H01F5/00 , H01F17/06 , H01F27/24
CPC分类号： H01F17/0006 , H01F17/04
摘要： A thin film inductive element according to this invention comprises an elongate conductor, and spaced apart magnetic strips that substantially surround the conductor, with dielectric material between the magnetic strips and the conductor. The inductive element can have relatively high inductance and low loss, can be used in linear form, meander on spiral form, or any other desired form, is suitable for use at RF frequencies, and can be integrated with conventional circuitry. Criteria for choosing the length of the magnetic strips and the thickness of the dielectric are disclosed.
摘要翻译：根据本发明的薄膜感应元件包括细长导体和基本上围绕导体的间隔开的磁条，其中电介质材料在磁条和导体之间。电感元件可以具有相对较高的电感和低损耗，可以线性形式使用，螺旋形式上的曲折或任何其它所需形式，适用于RF频率，并可与常规电路集成。公开了用于选择磁条的长度和电介质的厚度的标准。

5. 发明授权

US08785966B2 Magnetic tunnel junction transistor devices 有权
标题翻译：磁隧道结晶体管器件
公开(公告)号：US08785966B2
公开(公告)日：2014-07-22
申请号：US13115241
申请日：2011-05-25
申请人： Daniel Christopher Worledge , Vladislav Korenivski
发明人： Daniel Christopher Worledge , Vladislav Korenivski
IPC分类号： H01L27/22
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1675 , H01L27/226 , H01L43/08
摘要： Magnetic tunnel junction transistor devices and methods for operating and forming magnetic tunnel junction transistor devices. In one aspect, a magnetic tunnel junction transistor device includes a first source/drain electrode, a second source/drain electrode, a gate electrode, and a magnetic tunnel junction disposed between the gate electrode and the second source/drain electrode. The magnetic tunnel junction includes a magnetic free layer that extends along a length of the gate electrode toward the first source/drain electrode such that an end portion of the magnetic free layer is disposed between the gate electrode and the first source/drain electrode. The magnetic tunnel junction transistor device switches a magnetization orientation of the magnetic free layer by application of a gate voltage to the gate electrode, thereby changing a resistance between the first and second source/drain electrodes through the magnetic free layer.
摘要翻译：磁隧道结晶体管器件和用于操作和形成磁隧道结晶体管器件的方法。在一个方面，磁性隧道结晶体管器件包括设置在栅极电极和第二源极/漏极之间的第一源极/漏极，第二源极/漏极，栅电极和磁性隧道结。磁性隧道结包括沿着栅极电极的长度朝向第一源极/漏极电极延伸的无磁性层，使得磁性自由层的端部设置在栅极电极和第一源极/漏极之间。磁性隧道结晶体管器件通过向栅电极施加栅极电压来切换磁性自由层的磁化取向，从而通过无磁性层改变第一和第二源极/漏极之间的电阻。

6. 发明授权

US07751220B2 Method and arrangement for associative memory device based on ferrofluid 失效
标题翻译：基于铁磁流体的关联存储器件的方法和装置
公开(公告)号：US07751220B2
公开(公告)日：2010-07-06
申请号：US12091829
申请日：2006-10-27
申请人： Vladislav Korenivski
发明人： Vladislav Korenivski
IPC分类号： G11C15/02
CPC分类号： G11C15/02 , B82Y10/00 , B82Y30/00 , G11C11/15 , G11C11/16 , G11C15/046 , G11C25/00
摘要： An associative memory device includes a magnetically responsive layer adapted to store a representation of a pattern, the magnetically responsive layer includes magnetic nanoparticles as a magnetically active component. The magnetic nanoparticles of the associative memory device are dispersed in a solvent with variable viscosity, and the magnetically responsive layer is a layer of ferrofluid.
摘要翻译：相关存储器件包括适于存储图案表示的磁响应层，所述磁响应层包括作为磁性有源元件的磁性纳米颗粒。关联记忆装置的磁性纳米颗粒分散在具有可变粘度的溶剂中，并且磁响应层是一层铁磁流体。

7. 发明申请

US20090067232A1 Multiple Magneto-Resistance Devices Based on Doped Magnesium Oxide 失效
标题翻译：基于掺杂氧化镁的多种磁阻器件
公开(公告)号：US20090067232A1
公开(公告)日：2009-03-12
申请号：US12223534
申请日：2007-02-08
申请人： Vladislav Korenivski
发明人： Vladislav Korenivski
IPC分类号： G11C11/14 , H01F7/02 , G01R33/00
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/3254 , H01L43/08
摘要： The present invention provides a low resistance high magnetoresistance (MR) device comprised of a junction of two magnetic elements separated by a magnesium oxide (MgO) layer doped with such metals as Al and Li. Such device can be used as a sensor of magnetic field in magnetic recording or as a storage element in magnetic random access memory (MRAM). The invention provides a high-MR device possessing a diode function, comprised of a double junction of two outer magnetic elements separated by two MgO insulating layer and a center MgO layer doped with such metals as Al and Li. Such device provides design advantages when used as a storage element in MRAM. The invention with MR wherein a gate electrode is placed in electrical or physical contact to the center layer of the double tunnel junction.
摘要翻译：本发明提供了一种低电阻高磁阻（MR）器件，其包括由掺杂有诸如Al和Li的金属的氧化镁（MgO）层分离的两个磁性元件的接合部。这种装置可以用作磁记录中的磁场传感器或磁性随机存取存储器（MRAM）中的存储元件。本发明提供了具有二极管功能的高MR器件，由两个由两个MgO绝缘层隔开的两个外部磁性元件的双结和由Al和Li这样的金属掺杂的中心MgO层构成。当用作MRAM中的存储元件时，此类设备提供了设计优势。具有MR的本发明，其中栅电极与双隧道结的中心层电接触或物理接触。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式