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1. 发明申请

US20100178490A1 ROLL-TO-ROLL PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION METHOD OF BARRIER LAYERS COMPRISING SILICON AND CARBON 审中-公开
标题翻译：滚筒式滚筒等离子体增强化学气相沉积方法包含硅和碳的阻挡层
公开(公告)号：US20100178490A1
公开(公告)日：2010-07-15
申请号：US12529393
申请日：2008-02-29
申请人： Glenn Cerny , Mark Loboda , Vasgen Shamamian , Steven Snow , William Weidner , Ludmil Zambov
发明人： Glenn Cerny , Mark Loboda , Vasgen Shamamian , Steven Snow , William Weidner , Ludmil Zambov
IPC分类号： B32B27/06 , C23C16/44 , C23C16/32 , B32B9/04 , B32B3/26
CPC分类号： C23C16/545 , C23C16/30 , C23C16/325 , Y10T428/249978 , Y10T428/31507 , Y10T428/3154 , Y10T428/31663
摘要： The present invention provides method and process for forming a barrier layer on a flexible substrate. The continuous roll-to-roll method includes providing a substrate to a processing chamber using at least one roller configured to guide the substrate through the processing chamber. The process includes depositing a barrier layer adjacent the substrate by exposing at least one portion of the substrate that is within the processing chamber to plasma comprising a silicon-and-carbon containing precursor gas. The present invention is further directed to a coated flexible substrates comprising a barrier layer based on the structural unit SiC:H. The barrier layer possesses high density and low porosity. Still further, the barrier layer exhibits low water vapor transmission rate (WVTR) in the range of 10−2-10−3 g.m−2d−1 and is appropriate for very low permeability applications.
摘要翻译：本发明提供了在柔性基板上形成阻挡层的方法和工艺。连续的卷对卷方法包括使用至少一个构造成将基底引导通过处理室的辊将处理室提供衬底。该方法包括通过将处理室内的衬底的至少一部分暴露于包含含硅和碳的前体气体的等离子体来沉积邻近衬底的阻挡层。本发明进一步涉及包含基于结构单元SiC：H的阻挡层的涂覆的柔性基底。阻隔层具有高密度和低孔隙率。此外，阻挡层在10-2-10-3g.m-2d-1的范围内表现出低的水蒸汽透过率（WVTR），并且适用于非常低的渗透性应用。

2. 发明申请

US20130189446A1 LOW PRESSURE HIGH FREQUENCY PULSED PLASMA REACTOR FOR PRODUCING NANOPARTICLES 审中-公开
标题翻译：低压高频脉冲等离子体反应器生产纳米二氧化碳
公开(公告)号：US20130189446A1
公开(公告)日：2013-07-25
申请号：US13060722
申请日：2009-09-01
申请人： James A. Casey , Vasgen Shamamian
发明人： James A. Casey , Vasgen Shamamian
IPC分类号： C23C16/24 , B01F13/00
CPC分类号： C23C16/24 , B01F13/0001 , B01J2/04 , B82Y40/00 , H01J37/32082 , H01J2237/339 , Y10S977/891
摘要： The present invention provides a low-pressure very high frequency pulsed plasma reactor system for synthesis of nanoparticles. The system includes a chamber configured to receive at least one substrate and capable of being evacuated to a selected pressure. The system also includes a plasma source for generating a plasma from at least one precursor gas and a very high frequency radio frequency power source for providing continuous or pulsed radio frequency power to the plasma at a selected frequency. The frequency is selected based on a coupling efficiency between the pulsed radio frequency power and the plasma. Parameters of the VHF discharge and gas precursors are selected based on nanoparticle properties. The nanoparticle average size and particle size distribution are manipulated by controlling the residence time of the glow discharge (pulsing plasma) relative to the gas molecular residence time through the discharge and the mass flow rates of the nanoparticle precursor gas (or gases).
摘要翻译：本发明提供了一种用于合成纳米颗粒的低压超高频脉冲等离子体反应器系统。该系统包括被配置为容纳至少一个基板并能够被抽空到选定压力的腔室。该系统还包括用于从至少一个前体气体产生等离子体的等离子体源和用于以选定频率向等离子体提供连续或脉冲射频功率的非常高频率的射频电源。基于脉冲射频功率和等离子体之间的耦合效率选择频率。基于纳米颗粒性质选择VHF排放和气体前体的参数。通过控制辉光放电（脉冲等离子体）相对于通过放电的气体分子停留时间和纳米颗粒前体气体（或气体）的质量流量的停留时间来操纵纳米颗粒平均尺寸和粒度分布。

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