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    • 5. 发明申请
    • Electronic Article and Method of Forming
    • 电子文章和形成方法
    • US20130187185A1
    • 2013-07-25
    • US13825514
    • 2010-09-22
    • David DeshazerUdo PerniszLudmil Zambov
    • David DeshazerUdo PerniszLudmil Zambov
    • H01L31/0232H01L33/58
    • H01L31/02327H01L31/02168H01L33/44H01L33/56H01L33/58Y02E10/50
    • An electronic article includes an optoelectronic semiconductor having a refractive index of 3.7±2 and a dielectric layer disposed on the optoelectronic semiconductor. The dielectric layer has a thickness of at least 50 μm and a refractive index of 1.4±0.1. The electronic article includes a gradient refractive index coating (GRIC) that is disposed on the optoelectronic semiconductor and that has a thickness of from 50 to 400 nm. The refractive index of the GRIC varies along the thickness from 2.7±0.7 to 1.5±0.1. The GRIC also includes a gradient of a carbide and an oxycarbide along the thickness. The carbide and the oxycarbide each independently include at least one silicon or germanium atom. The article is formed by continuously depositing the GRIC using plasma-enhanced chemical vapor deposition in a dual frequency configuration and subsequently disposing the dielectric layer on the GRIC.
    • 电子制品包括折射率为3.7±2的光电半导体和设置在光电子半导体上的电介质层。 电介质层的厚度至少为50μm,折射率为1.4±0.1。 电子制品包括设置在光电子半导体上并具有50至400nm厚度的梯度折射率涂层(GRIC)。 GRIC的折射率沿厚度从2.7±0.7变化到1.5±0.1。 GRIC还包括沿着厚度的碳化物和碳氧化物的梯度。 碳化物和碳氧化物各自独立地包括至少一个硅或锗原子。 该物品通过使用等离子体增强化学气相沉积以双频配置连续沉积GRIC并随后将介电层设置在GRIC上而形成。