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    • 3. 发明申请
    • IMPEDANCE-MATCHING NETWORK USING BJT SWITCHES IN VARIABLE-REACTANCE CIRCUITS
    • 使用可变电阻电路中的BJT开关的阻抗匹配网络
    • WO2012099774A1
    • 2012-07-26
    • PCT/US2012/021114
    • 2012-01-12
    • ADVANCED ENERGY INDUSTRIES, INC.VAN ZYL, GideonGUROV, Gennady G.
    • VAN ZYL, GideonGUROV, Gennady G.
    • H03H7/40H03H11/30H01L21/3065H05H1/46
    • H03H11/30H01J37/32183H03H5/12H03H7/38H03K17/16H03K17/60H03K17/68H05H1/46H05H2001/4682
    • This disclosure describes systems, methods, and apparatuses for impedance-matching radio frequency power transmitted from a radio frequency generator to a plasma load in a semiconductor processing chamber. Impedance-matching can be performed via a match network having a variable-reactance circuit. The variable-reactance circuit can comprise one or more reactive elements all connected to a first terminal and selectively shorted to a second terminal via a switch. The switch can comprise a bipolar junction transistor (BJT) or insulated gate bipolar transistor (IGBT) controlled via bias circuitry. In an on-state, the BJT base-emitter junction is forward biased, and AC is conducted between a collector terminal and a base terminal. Thus, AC passes through the BJT primarily from collector to base rather than from collector to emitter. Furthermore, the classic match network topology used with vacuum variable capacitors can be modified such that voltages do not overload the BJT's in the modified topology.
    • 本公开描述了用于将从射频发生器发送的射频功率阻抗匹配到半导体处理室中的等离子体负载的系统,方法和装置。 可以通过具有可变电抗电路的匹配网络来执行阻抗匹配。 可变电抗电路可以包括一个或多个无功元件,其全部连接到第一端子,并经由开关选择性地短路到第二端子。 开关可以包括通过偏置电路控制的双极结型晶体管(BJT)或绝缘栅双极晶体管(IGBT)。 在导通状态下,BJT基极 - 发射极结正向偏置,并且AC在集电极端子和基极端子之间传导。 因此,AC主要通过BJT从集电器到基极而不是从集电极到发射极。 此外,可以修改与真空可变电容器一起使用的经典匹配网络拓扑,使得电压不会在修改的拓扑中使BJT过载。