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1. 发明授权

US08871025B2 SiC single crystals with reduced dislocation density grown by step-wise periodic perturbation technique 有权
标题翻译：通过逐步周期扰动技术生长的具有降低的位错密度的SiC单晶
公开(公告)号：US08871025B2
公开(公告)日：2014-10-28
申请号：US12441583
申请日：2007-09-27
申请人： Avinash Gupta , Utpal K. Chakrabarti , Jihong Chen , Edward Semenas , Ping Wu
发明人： Avinash Gupta , Utpal K. Chakrabarti , Jihong Chen , Edward Semenas , Ping Wu
IPC分类号： C30B28/14 , C30B29/36 , C30B23/00
CPC分类号： C30B29/36 , C30B23/002 , C30B23/005
摘要： In a crystal growth method, a seed crystal 8 and a source material 4 are provided in spaced relation inside of a growth crucible 6. Starting conditions for the growth of a crystal 14 in the growth crucible 6 are then established therein. The starting conditions include: a suitable gas inside the growth crucible 6, a suitable pressure of the gas inside the growth crucible 6, and a suitable temperature in the growth crucible 6 that causes the source material 4 to sublimate and be transported via a temperature gradient in the growth crucible 6 to the seed crystal 8 where the sublimated source material precipitates. During growth of the crystal 14 inside the growth crucible 6, at least one of the following growth conditions are intermittently changed inside the growth crucible 6 a plurality of times: the gas in the growth crucible 6, the pressure of the gas in the growth crucible 6, and the temperature in the growth crucible 6.
摘要翻译：在晶体生长方法中，种子晶体8和源材料4以生长坩埚6内的间隔关系设置。然后在其中建立用于在生长坩埚6中生长晶体14的起始条件。起始条件包括：生长坩埚6内的合适气体，生长坩埚6内部的气体的适当压力，以及生长坩埚6中适当的温度，其使得源材料4升华并经由温度梯度在生长坩埚6中，升华的源材料析出的晶种8。在生长坩埚6内生长晶体14期间，生长坩埚6内的至少一个以下生长条件间歇性地变化：生长坩埚6中的气体，生长坩埚中的气体压力 6，以及生长坩埚6中的温度。

2. 发明申请

US20100031877A1 SIC SINGLE CRYSTALS WITH REDUCED DISLOCATION DENSITY GROWN BY STEP-WISE PERIODIC PERTURBATION TECHNIQUE 有权
标题翻译： SIC单晶体具有降低的偏心密度，由步进周期性刺激技术
公开(公告)号：US20100031877A1
公开(公告)日：2010-02-11
申请号：US12441583
申请日：2007-09-27
申请人： Avinash Gupta , Utpal K. Chakrabarti , Jihong Chen , Edward Semenas , Ping Wu
发明人： Avinash Gupta , Utpal K. Chakrabarti , Jihong Chen , Edward Semenas , Ping Wu
IPC分类号： C30B23/02
CPC分类号： C30B29/36 , C30B23/002 , C30B23/005
摘要： In a crystal growth method, a seed crystal 8 and a source material 4 are provided in spaced relation inside of a growth crucible 6. Starting conditions for the growth of a crystal 14 in the growth crucible 6 are then established therein. The starting conditions include: a suitable gas inside the growth crucible 6, a suitable pressure of the gas inside the growth crucible 6, and a suitable temperature in the growth crucible 6 that causes the source material 4 to sublimate and be transported via a temperature gradient in the growth crucible 6 to the seed crystal 8 where the sublimated source material precipitates. During growth of the crystal 14 inside the growth crucible 6, at least one of the following growth conditions are intermittently changed inside the growth crucible 6 a plurality of times: the gas in the growth crucible 6, the pressure of the gas in the growth crucible 6, and the temperature in the growth crucible 6.
摘要翻译：在晶体生长方法中，种子晶体8和源材料4以生长坩埚6内的间隔关系设置。然后在其中建立用于在生长坩埚6中生长晶体14的起始条件。起始条件包括：生长坩埚6内的合适气体，生长坩埚6内部的气体的适当压力，以及生长坩埚6中适当的温度，其使得源材料4升华并经由温度梯度在生长坩埚6中，升华的源材料析出的晶种8。在生长坩埚6内生长晶体14期间，生长坩埚6内的至少一个以下生长条件间歇性地变化：生长坩埚6中的气体，生长坩埚中的气体压力 6，以及生长坩埚6中的温度。

3. 发明授权

US07612345B2 Radiation detector crystal and method of formation thereof 有权
公开(公告)号：US07612345B2
公开(公告)日：2009-11-03
申请号：US10594934
申请日：2006-01-27
申请人： Csaba Szeles , Scott E. Cameron , Vincent D. Mattera, Jr. , Utpal K. Chakrabarti
发明人： Csaba Szeles , Scott E. Cameron , Vincent D. Mattera, Jr. , Utpal K. Chakrabarti
IPC分类号： G01T1/24
CPC分类号： H01L31/08 , H01L31/03042 , Y02E10/544 , Y02P70/521
摘要： A radiation detector crystal is made from CdxZn1-xTe, where 0≦x≦1; an element from column III or column VII of the periodic table, desirably in a concentration of about 1 to 10,000 atomic parts per billion; and the element Ruthenium (Ru), the element Osmium (Os) or the combination of Ru and Os, desirably in a concentration of about 1 to 10,000 atomic parts per billion using a conventional crystal growth method, such as, for example, the Bridgman method, the gradient freeze method, the electro-dynamic gradient freeze method, the so-call traveling heater method or by the vapor phase transport method. The crystal can be used as the radiation detecting element of a radiation detection device configured to detect and process, without limitation, X-ray and Gamma ray radiation events.

4. 发明申请

US20090041648A1 Radiation detector crystal and method of formation thereof 有权
标题翻译：辐射检测器晶体及其形成方法
公开(公告)号：US20090041648A1
公开(公告)日：2009-02-12
申请号：US10594934
申请日：2006-01-27
申请人： Csaba Szeles , Scott E. Cameron , Vincent D. Mattera, JR. , Utpal K. Chakrabarti
发明人： Csaba Szeles , Scott E. Cameron , Vincent D. Mattera, JR. , Utpal K. Chakrabarti
IPC分类号： C01B35/04 , C01B7/00 , C30B31/00 , C01B19/00
CPC分类号： H01L31/08 , H01L31/03042 , Y02E10/544 , Y02P70/521
摘要： A radiation detector crystal is made from CdxZn1-xTe, where 0≦x≦1; an element from column III or column VII of the periodic table, desirably in a concentration of about 1 to 10,000 atomic parts per billion; and the element Ruthenium (Ru), the element Osmium (Os) or the combination of Ru and Os, desirably in a concentration of about 1 to 10,000 atomic parts per billion using a conventional crystal growth method, such as, for example, the Bridgman method, the gradient freeze method, the electro-dynamic gradient freeze method, the so-call traveling heater method or by the vapor phase transport method. The crystal can be used as the radiation detecting element of a radiation detection device configured to detect and process, without limitation, X-ray and Gamma ray radiation events.
摘要翻译：辐射检测器晶体由CdxZn1-xTe制成，其中0 <= x <= 1; 元素周期表第三列或第七列的元素，理想地为约1至10,000原子数十亿的浓度; 并且元素钌（Ru），元素锇（Os）或Ru和Os的组合，优选使用常规晶体生长方法的约1至10,000原子百分数的浓度，例如Bridgman 方法，梯度冻结法，电动态梯度冷冻法，所谓呼气加热法或气相输送法。该晶体可以用作放射线检测装置的辐射检测元件，其被配置为检测并处理但不限于X射线和伽马射线事件。

5. 发明申请

US20090250692A1 Radiation Detector With Asymmetric Contacts 审中-公开
标题翻译：不对称触点的辐射探测器
公开(公告)号：US20090250692A1
公开(公告)日：2009-10-08
申请号：US12419638
申请日：2009-04-07
申请人： Csaba Szeles , Utpal K. Chakrabarti
发明人： Csaba Szeles , Utpal K. Chakrabarti
IPC分类号： H01L31/0272 , H01L21/283
CPC分类号： H01L29/47 , H01L31/115
摘要： A room temperature radiation detector is made from a semi-insulating Cd1-xZnxTe crystal, where 0≦x≦1, having a first electrode made of Pt or Au on one surface of the crystal and a second electrode of Al, Ti or In on another surface of the crystal. In use of the crystal to detect radiation events, an electrical bias is applied between the first and second electrodes.
摘要翻译：室温辐射检测器由半绝缘Cd1-xZnxTe晶体制成，其中0 <= x <= 1，在晶体的一个表面上具有由Pt或Au制成的第一电极和Al，Ti的第二电极或在晶体的另一个表面。在使用晶体来检测辐射事件时，在第一和第二电极之间施加电偏压。

6. 发明授权

US06320265B1 Semiconductor device with high-temperature ohmic contact and method of forming the same 有权
标题翻译：具有高温欧姆接触的半导体器件及其形成方法
公开(公告)号：US06320265B1
公开(公告)日：2001-11-20
申请号：US09290535
申请日：1999-04-12
申请人： Utpal K. Chakrabarti , Gustav E. Derkits, Jr.
发明人： Utpal K. Chakrabarti , Gustav E. Derkits, Jr.
IPC分类号： H01L2348
CPC分类号： H01L29/45
摘要： A semiconductor device includes a semiconductor layer, prelayer, refractory layer, and conductive layer. The conductive layer includes an ohmic contact layer, and may also include a barrier layer, of a highly stable, low-resistance element or compound, such as Au or Ti, which is formed on the refractory layer. The refractory layer is a material that does not react with, or dissociate from, either the prelayer or the conductive layer when the semiconductor device is exposed to relatively high temperatures. The refractory layer material may be metal suicides, phosphides, or nitrides. The material of the prelayer is selected to minimize strain between the prelayer, the refractory layer and the semiconductor layer to provide a relatively strong bond between the refractory layer and semiconductor. The prelayer may be selected to provide relatively high current injection to the semiconductor, and may further form a low Schottky barrier height with the semiconductor. Effects from dissociation and/or diffusion of the materials forming the conductive layer to the semiconductor when the semiconductor device is exposed to temperatures above 350° C. may be reduced by employing the refractory layer and prelayer.
摘要翻译：半导体器件包括半导体层，预层，耐火层和导电层。导电层包括欧姆接触层，并且还可以包括形成在耐火层上的高稳定性，低电阻元件或化合物（例如Au或Ti）的阻挡层。当半导体器件暴露于较高温度时，耐火层是不与预层或导电层发生反应或离解的材料。难熔层材料可以是金属硅化物，磷化物或氮化物。选择预层的材料以使前层，耐火层和半导体层之间的应变最小化，以在耐火层和半导体之间提供相对较强的结合。可以选择预层以向半导体提供相对高的电流注入，并且还可以与半导体形成低肖特基势垒高度。当半导体器件暴露于高于350℃的温度时，形成导电层的材料的解离和/或扩散对半导体的影响可通过采用耐火层和预层来降低。

7. 发明授权

US5346855A Method of making an INP-based DFB laser 失效
标题翻译：制造基于INP的DFB激光器的方法
公开(公告)号：US5346855A
公开(公告)日：1994-09-13
申请号：US6352
申请日：1993-01-19
申请人： Erin K. Byrne , Utpal K. Chakrabarti , Todd R. Hayes
发明人： Erin K. Byrne , Utpal K. Chakrabarti , Todd R. Hayes
IPC分类号： H01L21/314 , H01S5/12 , H01S5/323 , H01L21/20
CPC分类号： H01L21/314 , H01S5/12 , H01S5/1231 , H01S5/32391 , Y10S148/072 , Y10S148/095
摘要： Disclosed is a method of making InP-based DFB lasers that can reliably mitigate or substantially prevent erosion of the grating during overgrowth. The method comprises contacting, prior to overgrowth, the grating with a sulfurcontaining aqueous medium, e.g., 80 parts by weight H.sub.2 O/20 parts by weight ammonium sulfide.
摘要翻译：公开了一种制造基于InP的DFB激光器的方法，其可以可靠地减轻或基本上防止在过度生长期间光栅的侵蚀。该方法包括在过度生长之前使光栅与含硫的水性介质接触，例如80重量份的H 2 O / 20重量份的硫化铵。

8. 发明授权

US4749255A Coating for optical devices 失效
标题翻译：光学器件涂层
公开(公告)号：US4749255A
公开(公告)日：1988-06-07
申请号：US806492
申请日：1985-12-09
申请人： Utpal K. Chakrabarti , Aland K. Chin , George J. Przybylek , LeGrand G. Van Uitert , George J. Zydzik
发明人： Utpal K. Chakrabarti , Aland K. Chin , George J. Przybylek , LeGrand G. Van Uitert , George J. Zydzik
IPC分类号： H01L31/0264 , C23C14/08 , C23C14/30 , G02B1/11 , H01L21/314 , H01L21/316 , H01L31/04 , H01L33/00 , H01S5/00 , H01S5/028 , G02B1/10
CPC分类号： H01S5/028 , C23C14/083 , C23C14/30 , G02B1/113
摘要： Disclosed is a device including a surface coating for passivation or anti-reflection, and a method of manufacture. The coating comprises ZrO.sub.2 doped with yttrium, magnesium or calcium. The doped ZrO.sub.2 is preferably deposited on the device surface by electron-beam evaporation from a single crystal source of ZrO.sub.2 and Y.sub.2 O.sub.3, MgO or CaO.
摘要翻译：公开了一种包括用于钝化或抗反射的表面涂层的装置及其制造方法。该涂层包含掺杂有钇，镁或钙的ZrO 2。掺杂的ZrO 2优选通过从ZrO 2和Y 2 O 3，MgO或CaO的单晶源的电子束蒸发沉积在器件表面上。

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