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1. 发明申请

US20010023888A1 Welding method for welded members subjected to fluoride passivation treatment, fluoride passivation retreatment method, and welded parts 失效
标题翻译：氟化物钝化处理焊接件的焊接方法，氟化物钝化再处理方法和焊接部件
公开(公告)号：US20010023888A1
公开(公告)日：2001-09-27
申请号：US09748883
申请日：2000-12-27
申请人： Tadahiro OHMI and KABUSHIKI KAISHA ULTRACLEAN TECHNOLOGY RESEARCH INSTITUTE
发明人： Tadahiro Ohmi , Takahisa Nitta , Yasuyuki Shirai , Osamu Nakamura
IPC分类号： B23K028/00 , B23K005/213 , B23K031/02 , B23K001/19 , B23K035/24 , C23C008/10 , B23K035/36 , C21D009/08
CPC分类号： B23K35/383 , B23K1/20 , Y10T428/12535 , Y10T428/12979 , Y10T428/31678
摘要： The present invention provides a welding method for materials to be welded which are subjected to fluoride passivation treatment, and a fluoride passivation retreatment method, wherein, when fluoride passivation retreatment was conducted after welding, there is no generation of particles or dust, and superior resistance is provided to fluorine system gases. In the present invention, when materials to be welded comprising stainless steel subjected to fluoride passivation treatment are welded, hydrogen is added to the gas (the back shield gas) flowing through the materials to be welded. Furthermore, in the welding method for materials to be welded which are subjected to fluoride passivation treatment in accordance with the present invention, the thickness of the fluoride passivated film in a predetermined range from the butt end surfaces of the materials to be welded, comprising stainless steel subjected to a fluoride passivation treatment, is set to 10 nm or less, and welding is conducted. Furthermore, in the fluoride passivation retreatment method in accordance with the present invention, after conducting the welding method described above, at least the welded parts are heated, and a gas containing fluorine gas is caused to flow in the interior part.
摘要翻译：本发明提供一种待进行氟化物钝化处理的待焊接材料的焊接方法，以及氟化物钝化再处理方法，其中，在焊接后进行氟化物钝化再处理时，不产生颗粒或灰尘，且具有优异的电阻被提供给氟系气体。在本发明中，当焊接包含不锈钢的待焊接材料进行氟化物钝化处理时，向流过待焊接材料的气体（背面保护气体）添加氢。此外，在根据本发明的被氟化物钝化处理的待焊接材料的焊接方法中，氟化钝化膜的厚度在待焊接材料的对接端面的预定范围内，包括不锈钢进行氟化物钝化处理的钢被设定为10nm以下，进行焊接。此外，在本发明的氟化物钝化再处理方法中，在进行了上述的焊接方法之后，至少加热了焊接部，并且使含有氟气的气体在内部流动。

2. 发明申请

WO1999053534A1 PROCESS SYSTEM 审中-公开
标题翻译：过程系统
公开(公告)号：WO1999053534A1
公开(公告)日：1999-10-21
申请号：PCT/JP1999001908
申请日：1999-04-09
申请人： KABUSHIKI KAISHA ULTRACLEAN TECHNOLOGY RESEARCH INSTITUTE , OHMI, Tadahiro , NITTA, Takahisa , HIRAYAMA, Masaki , MORII, Akio
发明人： KABUSHIKI KAISHA ULTRACLEAN TECHNOLOGY RESEARCH INSTITUTE
IPC分类号： H01L21/205
CPC分类号： H01L21/67751 , H01L21/67772 , H01L21/67778
摘要： A process system requiring a smaller floor space and capable of providing a smooth flow of gas and a desirable plasma, which efficiently produces and maintains a plasma while reducing losses of high-frequency power supplied for plasma processing. The system comprises a process chamber (403) connected to an upper part of a transfer chamber (402) through a gate (416) (Figure 4), a stage (406) isolated from the outside and provided with a plate (412) for supporting an object (415) of processing, means (410) for moving the plate (412) of the stage (406) through the gate (416) between the transfer chamber (402) and the process chamber (403) while isolating the transfer chamber (402) from the outside, and means (413, 414) for isolating the transfer chamber (402) from the process chamber (403) when the plate (412) is in process chamber (403).
摘要翻译：一种处理系统，其需要较小的占地面积并且能够提供平稳的气体流和期望的等离子体，其有效地产生和维持等离子体，同时减少为等离子体处理提供的高频功率的损耗。系统包括通过门（416）（图4）连接到传送室（402）的上部的处理室（403），与外部隔离并设置有板（412）的台（406），用于支撑处理物体（415），用于通过所述传送室（402）和所述处理室（403）之间的所述门（416）移动所述载物台（406）的所述板（412）的装置（410），同时隔离所述传送（402），以及用于当板（412）处于处理室（403）时将传送室（402）与处理室（403）隔离的装置（413,414）。

3. 发明申请

WO1998001898A1 RIE APPARATUS 审中-公开
标题翻译： RIE装置
公开(公告)号：WO1998001898A1
公开(公告)日：1998-01-15
申请号：PCT/JP1997002326
申请日：1997-07-04
申请人： KABUSHIKI KAISHA ULTRACLEAN TECHNOLOGY RESEARCH INSTITUTE , OHMI, Tadahiro , NITTA, Takahisa
发明人： KABUSHIKI KAISHA ULTRACLEAN TECHNOLOGY RESEARCH INSTITUTE
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , H01L21/3065
摘要： A reactive ion etching (RIE) apparatus which has an etching chamber in which O2 and H2O do not exist or into which O2 and H2O are not brought and, further, in which oxygen ions do not exist when a plasma is generated. The etching selection ratio of an object to be treated against resist is determined. A loading chamber (102) into which an object (101) is introduced is connected to the treatment chamber (103) in which the object (102) is etched through a first opening/closing means (104). At least the outermost surfaces of metal contamination preventing means (105) which is provided along the inner walls of the treatment chamber (103), sputtering preventing means (106) which is provided along electrodes in the treatment chamber (103) or/and the inner wall of the treatment chamber (103) are made of material which does not contain oxygen atoms.
摘要翻译：具有不存在O 2和H 2 O或不产生O 2和H 2 O的蚀刻室的反应离子蚀刻（RIE）装置，此外，当产生等离子体时，其中不存在氧离子。确定待处理对象的抗蚀剂的蚀刻选择比。将物体（101）引入其中的装载室（102）连接到通过第一打开/关闭装置（104）蚀刻物体（102）的处理室（103）。至少沿着处理室（103）的内壁设置的金属污染防止装置（105）的最外表面，沿着处理室（103）中的电极设置的溅射防止装置（106）或/ 处理室（103）的内壁由不含氧原子的材料制成。

4. 发明申请

WO1998001896A1 WASHING APPARATUS AND WASHING METHOD 审中-公开
标题翻译：洗衣机和洗衣方法
公开(公告)号：WO1998001896A1
公开(公告)日：1998-01-15
申请号：PCT/JP1997002311
申请日：1997-07-03
申请人： ULTRACLEAN TECHNOLOGY RESEARCH INSTITUTE , MIKI, Masahiro , NITTA, Takahisa , HARADA, Yasuyuki , OHMI, Tadahiro
发明人： ULTRACLEAN TECHNOLOGY RESEARCH INSTITUTE
IPC分类号： H01L21/304
CPC分类号： H01L21/02052 , B08B3/02 , B08B2203/0288 , H01L21/67051
摘要： A washing apparatus and a washing method, which further improve a washing effect and enable highly clean washing with a small amount of chemical. Also, it is an object of the invention to provide a washing apparatus of high throughput involving rapid switching of various chemicals of high responsibility and capable of performing a series of washing operations at high speed. The washing apparatus comprises undiluted cleaning liquid injection means for injecting an undiluted solution or undiluted gas of a cleaning liquid into a ultrapure water channel to make a cleaning liquid of a desired concentration, cleaning liquid supplying means connected to the super demineralized water channel for simultaneously supplying front and rear surfaces of a substrate with a cleaning liquid adjusted to a desired concentration or a ultrapure water, means for superposing ultrasonic wave or high frequency sound waves of 0.5 MHz or more on the substrate through the cleaning liquid, and means for rotating the substrate or means for moving either of the substrate and the cleaning liquid supplying means in one direction, whereby injection of the undiluted solution or undiluted gas into the ultrapure water channel is controlled to continuously perform washing of the substrate by the cleaning liquid and washing by the ultrapure water.
摘要翻译：一种洗涤装置和洗涤方法，其进一步改善洗涤效果并且能够用少量化学品进行高度清洁的洗涤。此外，本发明的目的是提供一种高产量的洗涤装置，涉及高度责任的各种化学品的快速切换，并且能够高速地执行一系列洗涤操作。洗涤装置包括未稀释的清洗液注入装置，用于将未稀释溶液或未稀释气体的清洗液注入超纯水通道中以制备所需浓度的清洗液体，连接至超级软化水通道的清洗液供应装置，用于同时供应具有调节到所需浓度的清洗液体的基板的前表面和后表面，或超纯水，用于通过清洗液将0.5MHz以上的超声波或高频声波叠加在基板上的装置，以及用于使基板旋转的装置或用于沿一个方向移动基板和清洁液供给装置中的任一个的装置，由此将未稀释溶液或未稀释气体注入超纯水通道中进行控制，以通过清洗液体连续地进行基板清洗和超纯水的清洗水。

5. 发明申请

WO1997048834A1 METHOD FOR FORMING OXIDATION-PASSIVE LAYER, FLUID-CONTACTING PART, AND FLUID FEED/DISCHARGE SYSTEM 审中-公开
标题翻译：形成无氧层，流体接触部分和流体进料/排放系统的方法
公开(公告)号：WO1997048834A1
公开(公告)日：1997-12-24
申请号：PCT/JP1997002132
申请日：1997-06-20
申请人： ULTRACLEAN TECHNOLOGY RESEARCH INSTITUTE , OHMI, Tadahiro , NITTA, Takahisa
发明人： ULTRACLEAN TECHNOLOGY RESEARCH INSTITUTE
IPC分类号： C23C08/18
CPC分类号： C23C8/16 , C23C8/12 , C23C8/14 , C23C8/18 , Y10T428/1259
摘要： A method for forming an oxidation-passive layer having high corrosion resistance to highly oxidizing materials such as ozone; a stainless steel and a titanium-base alloy having high corrosion resistance to an ozone-containing fluid; and a fluid-contacting part, a process apparatus, and a fluid feed/discharge system made by using the same. The method is characterized by heat-treating the surface of a stainless steel or titanium-base alloy having an Al content of 0.5 to 7 % by weight either at 300 to 700 DEG C in a mixed gas atmosphere composed of an inert gas and 500 ppb to 1 % H2O gas or 1 to 500 ppm oxygen gas, or alternatively at 20 to 300 DEG C in a mixed gas atmosphere composed of an oxygen gas and at least 100 ppm ozone gas to form an oxidation-passive layer containing an aluminum oxide or a titanium oxide.
摘要翻译：一种形成对氧化物质如臭氧具有高耐腐蚀性的氧化钝化层的方法; 对含臭氧流体具有高耐腐蚀性的不锈钢和钛基合金; 流体接触部件，处理装置和使用该流体接触部件的流体供给/排出系统。该方法的特征在于，在由惰性气体和500ppb组成的混合气体气氛中，在300〜700℃下Al含量为0.5〜7重量％的不锈钢或钛基合金的表面进行热处理至1％H 2 O气体或1至500ppm氧气，或者在由氧气和至少100ppm臭氧气体组成的混合气体气氛中在20至300℃下形成含氧化铝的氧化钝化层或二氧化钛。

6. 发明申请

WO1997048640A1 MOISTURE GENERATION METHOD AND MOISTURE GENERATOR 审中-公开
标题翻译：水分生成方法和水分发生器
公开(公告)号：WO1997048640A1
公开(公告)日：1997-12-24
申请号：PCT/JP1997002131
申请日：1997-06-20
申请人： ULTRACLEAN TECHNOLOGY RESEARCH INSTITUTE , OHMI, Tadahiro , NITTA, Takahisa
发明人： ULTRACLEAN TECHNOLOGY RESEARCH INSTITUTE
IPC分类号： C01B05/00
CPC分类号： C01B5/00
摘要： A moisture generation method and a moisture generator can efficiently generate high concentration moisture having high reactivity. A method of generating a moisture by reacting hydrogen and oxygen, comprises a mixed gas preparation step a1 of mixing hydrogen and oxygen to prepare a first mixed gas without diluting them with an inert gas, and a moisture generation step b1 of introducing the first mixed gas into a reaction tube incorporating a material having a catalytic function of reacting hydrogen with oxygen or made of such a material, and reacting hydrogen and oxygen inside the reaction tube to generate moisture. The moisture generator comprises a hydrogen source, means for controlling the hydrogen flow rate, an oxygen source, means for controlling the oxygen flow rate, a first mixing portion for mixing hydrogen and oxygen to prepare a first mixed gas, a reaction tube incorporating a material having a catalytic function of reacting hydrogen and oxygen constituting the first mixed gas or made of such a material, and means for introducing the first mixed gas into the reaction tube from the first mixing portion.
摘要翻译：水分产生方法和水分发生器可以有效地产生具有高反应性的高浓度水分。通过氢和氧反应生成水分的方法包括：混合气体制备步骤a1，其中混合氢气和氧气，以制备第一混合气体，而不用惰性气体稀释;和产生第一混合气体的水分产生步骤b1 加入具有氢气与氧反应或由这种材料制成的催化功能的材料的反应管中，并使反应管内的氢和氧反应产生水分。水分发生器包括氢源，用于控制氢气流量的装置，氧源，用于控制氧气流量的装置，用于混合氢气和氧气以制备第一混合气体的第一混合部分，并入材料的反应管具有使构成第一混合气体的氢和氧反应或由这种材料制成的催化功能，以及用于将第一混合气体从第一混合部分引入反应管的装置。

7. 发明公开

EP0879902A3 Treating method and apparatus utilizing chemical reaction 失效
标题翻译： Behandlungsverfahren und Vorrichtung，eine chemische Reaktion verwenden
公开(公告)号：EP0879902A3
公开(公告)日：1999-12-29
申请号：EP98303765.6
申请日：1998-05-13
申请人： CANON KABUSHIKI KAISHA , TADAHIRO OHMI , Ultraclean Technology Research Institute
发明人： Ohmi, Tadahiro , Tanaka, Nobuyoshi , Ushiki, Takeo , Shinohara, Toshikuni , Nitta, Takahisa, c/o Ultraclean Techn. Res. Inst.
IPC分类号： C25D11/32 , C25F3/12 , H01L21/306
CPC分类号： H01L21/3063 , C25D11/005 , C25D11/32 , H01L21/76256
摘要： In order to effectively remove gas molecules of a by-product in a chemical reaction in a solution so as to achieve high efficiency, high rate, and uniformity of the chemical reaction in the solution and in order to realize formation of a semiconductor substrate applicable to production of SOI structure and realize formation of a semiconductor substrate in which a light-emitting element or a gas sensor can be formed, on the basis of an inexpensive silicon substrate, the chemical reaction is performed while the concentration of a gas dissolved in a reaction solution in a reaction vessel is always controlled to be not more than the solubility thereof during the reaction. Further, a chemical reaction apparatus is disclosed which comprises a reaction vessel having a holding means for holding a substrate, for housing a reaction solution and carrying out the chemical reaction with the substrate therein, a circulation line for circulating the reaction solution outside the reaction vessel, a deaerating device provided on the circulation line, for removing the gas from the reaction solution, and a transfer device for transferring the reaction solution in the circulation line.
摘要翻译：为了有效地除去溶液中的化学反应中的副产物的气体分子，以达到溶液中的化学反应的高效率，高速率和均匀性，并且为了实现适用于生成SOI结构，并且在廉价的硅衬底的基础上实现可以形成发光元件或气体传感器的半导体衬底的形成，同时在溶解在反应中的气体的浓度进行化学反应反应容器中的溶液总是控制在不大于其在反应期间的溶解度。此外，公开了一种化学反应装置，其包括具有保持基板的保持装置的反应容器，用于容纳反应溶液并与其中的基板进行化学反应，用于使反应溶液循环到反应容器外部的循环管线设置在循环管线上的脱气装置，用于从反应溶液中除去气体;以及转移装置，用于将反应溶液转移到循环管线中。

8. 发明授权

EP0879902B1 Treating method and apparatus utilizing chemical reaction 失效
标题翻译：治疗方法和装置，利用化学反应
公开(公告)号：EP0879902B1
公开(公告)日：2003-08-13
申请号：EP98303765.6
申请日：1998-05-13
申请人： CANON KABUSHIKI KAISHA , TADAHIRO OHMI , Ultraclean Technology Research Institute
发明人： Ohmi, Tadahiro , Tanaka, Nobuyoshi , Ushiki, Takeo , Shinohara, Toshikuni , Nitta, Takahisa, c/o Ultraclean Techn. Res. Inst.
IPC分类号： C25D11/32 , C25F3/12 , H01L21/306
CPC分类号： H01L21/3063 , C25D11/005 , C25D11/32 , H01L21/76256
摘要： In order to effectively remove gas molecules of a by-product in a chemical reaction in a solution so as to achieve high efficiency, high rate, and uniformity of the chemical reaction in the solution and in order to realize formation of a semiconductor substrate applicable to production of SOI structure and realize formation of a semiconductor substrate in which a light-emitting element or a gas sensor can be formed, on the basis of an inexpensive silicon substrate, the chemical reaction is performed while the concentration of a gas dissolved in a reaction solution in a reaction vessel is always controlled to be not more than the solubility thereof during the reaction. Further, a chemical reaction apparatus is disclosed which comprises a reaction vessel having a holding means for holding a substrate, for housing a reaction solution and carrying out the chemical reaction with the substrate therein, a circulation line for circulating the reaction solution outside the reaction vessel, a deaerating device provided on the circulation line, for removing the gas from the reaction solution, and a transfer device for transferring the reaction solution in the circulation line.

9. 发明公开

EP1118954A1 SEMICONDUCTOR COMPUTING UNIT 审中-公开
标题翻译： HALBLEITERRECHNER，统一性
公开(公告)号：EP1118954A1
公开(公告)日：2001-07-25
申请号：EP99913706.0
申请日：1999-04-19
申请人： Kabushiki Kaisha Ultraclean Technology Research Institute , Shibata, Tadashi , Ohmi, Tadahiro
发明人： SHIBATA, Tadashi , OHMI, Tadahiro , NAKADA, Akira , MORIMOTO, Tatsuro , NITTA, Takahisa, K. K. Ultraclean Tech. Res. Ins.
IPC分类号： G06G7/12
CPC分类号： G06N3/063 , G06N3/0635
摘要： It is an object of the present invention to provide a semiconductor arithmetic unit which realizes a maximum or minimum value retrieval operation at high speed and with a high degree of accuracy used in a vector quantization processor composed of a binary-multivalue-analog merged operation processing circuit. In addition, it is another object to add a function for retrieving a vector with a distance of necessary order to the unit.
The present invention is characterized in that, in a multi-loop circuit comprising an amplifying circuit group composed of a plurality of sets of first amplifiers with a floating gate to which first electrodes and a single second electrode are capacitively coupled with a predetermined ratio, a logical operation circuit to which output signals of the amplifying circuit group are inputted and which outputs a logical 0 or 1, and a second amplifying circuit to which an output signal of the logical operation circuit is inputted and whose output is distributed to all of the second electrodes of the amplifying circuit group, the second amplifying circuit includes an adjusting circuit which adjusts an output current driving ability and a controlling circuit which controls the adjustment with a predetermined regulation, and the adjustment of the controlling circuit is executed according to variation of the output of the logical operation circuit.
摘要翻译：本发明的目的是提供一种半导体运算单元，该半导体运算单元在由二进制多值模拟合并运算处理器构成的矢量量化处理器中以高速度和高精度地实现最大值或最小值检索操作电路。此外，另一个目的是添加用于检索具有必要顺序距离的向量到该单元的函数。本发明的特征在于，在包括由具有浮置栅极的多组第一放大器组成的放大电路组的多回路电路中，第一电极和单个第二电极以预定比率电容耦合，输入放大电路组的输出信号并输出逻辑0或1的逻辑运算电路，输入逻辑运算电路的输出信号的第2放大电路，其输出分配给第2 放大电路组的电极，第二放大电路包括调节输出电流驱动能力的调节电路和控制电路，控制电路以预定的调节进行调节，并且根据输出的变化执行控制电路的调整的逻辑运算电路。

10. 发明公开

EP1079635A1 DATA COMPRESSING DEVICE AND METHOD, DATA EXPANDING DEVICE AND METHOD, DATA COMPRESSING/EXPANDING SYSTEM AND METHOD, CODE BOOK MAKING METHOD, AND VECTOR QUANTIZING DEVICE AND METHOD 审中-公开
标题翻译：数据压缩设备和-VERFAHREM，数据扩展装置和方法，数据压缩/扩展系统和方法中，METHOD FOR CREATING的代码簿矢量量化和程序
公开(公告)号：EP1079635A1
公开(公告)日：2001-02-28
申请号：EP99914764.8
申请日：1999-04-19
申请人： Ultraclean Technology Research Institute, Co. Ltd , Ohmi, Tadahiro
发明人： OHMI, Tadahiro , KOTANI, Koji , NAKADA, Akira , IMAI, Makoto, Tohoku University , KONDA, Masahiro, Tohoku University , MORIMOTO, Tatsuo, Tohoku University , YONEZAWA, Takemi, Tohoku University , NOZAWA, Toshiyuki, Tohoku University , NAKAYAMA, Takahiro, Tohoku University , FUJIBAYASHI, Masanori, Tohoku University , NITTA, Takahisa, Ultraclean Tech. Res. Inst.Co.Ltd
IPC分类号： H04N7/28 , H03M7/30
CPC分类号： G06T9/008 , H03M7/3082 , H04N19/503 , H04N19/94
摘要： A correlation ratio calculation section (36) quantizes the vectors of each frame of a moving picture by using a space direction code book. A space direction code book reconstruction calculating section (39) rearranges obtained code string to generate new vectors. The correlation ratio calculation section (36) quantizes the new vectors by using a time-axis code book. In such a way, not only vector quantization in the space direction is performed for each frame image, but also vector quantization in the time-axis direction is performed between frames along the time axis.
摘要翻译：的相关性比计算部（36），通过使用空间方向的码本量化的运动画面的每帧的矢量。的空间方向的码本重构计算部（39）重新排列获得的代码串，以产生新向量。的相关性比计算部分（36）通过使用时间轴码本量化新载体。在寻求一种方法，在空间方向上不仅矢量量化执行用于每个帧图像的，所以在时间轴方向矢量量化沿时间轴帧，但之间执行。

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