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1. 发明授权

US06887338B1 300 mm platen and belt configuration 失效
标题翻译： 300 mm压板和皮带配置
公开(公告)号：US06887338B1
公开(公告)日：2005-05-03
申请号：US10186930
申请日：2002-06-28
申请人： Travis Robert Taylor
发明人： Travis Robert Taylor
IPC分类号： B24B21/10 , B24B21/20 , B24B37/04 , C23F1/00 , H05H1/00
CPC分类号： B24B21/20 , B24B21/10 , B24B37/04
摘要： An invention is provided for a chemical mechanical planarization apparatus for processing 300 millimeter wafers. The CMP apparatus includes a polishing belt having a belt tension in a range of about 3000 lbs to 4000 lbs. In addition, a platen is disposed below the polishing belt at a positive platen height. The platen includes at least three air pressure zones, with each air pressure zone being capable of providing air pressure to a backside of the polishing belt. The platen can include, for example, eight air pressure zones. In this aspect, a second air pressure zone adjacent to a first outermost air pressure zone provides an air pressure in a range of about 30 psi to 50 psi, such as about 34 psi. In addition, a third air pressure zone a fourth pressure zone can each provide an air pressure in a range of about 4 psi to 13 psi, such as about 7 psi. In this aspect, the remaining air pressure zones can be set to 0 psi, which conserves fluid consumption. Additional fluid consumption reduction can be achieved using a plurality of check values disposed within an air supply system coupled to the platen, wherein the check values prevent negative airflow into the platen.
摘要翻译：本发明提供一种用于处理300毫米晶圆的化学机械平面化装置。 CMP设备包括具有在约3000磅至4000磅范围内的带张力的抛光带。此外，在正的压板高度处，在抛光带下方设置压板。压板包括至少三个空气压力区域，每个空气压力区域能够向抛光带的后侧提供空气压力。压板可以包括例如八个空气压力区。在这方面，与第一最外面的空气压力区相邻的第二空气压力区提供在约30psi至50psi，例如约34psi的范围内的空气压力。此外，第四压力区域的第三压力区域可以各自提供在约4psi至13psi范围内的空气压力，例如约7psi。在这方面，剩余的空气压力区域可以设置为0psi，这节省了流体消耗。可以使用布置在联接到压板的空气供应系统内的多个检查值来实现额外的流体消耗减少，其中，检查值防止负气流进入压板。

2. 发明授权

US06790128B1 Fluid conserving platen for optimizing edge polishing 失效
标题翻译：流体节流板，用于优化边缘抛光
公开(公告)号：US06790128B1
公开(公告)日：2004-09-14
申请号：US10112424
申请日：2002-03-29
申请人： Travis Robert Taylor , Cangshan Xu
发明人： Travis Robert Taylor , Cangshan Xu
IPC分类号： B24B100
CPC分类号： B24B37/16 , B24B21/04 , B24B57/02
摘要： A platen is disclosed. The platen includes a support surface for supporting a portion of a linear polishing belt during a chemical mechanical polishing (CMP) operation. The platen also includes a plurality of fluid outlets oriented throughout the support surface. The orientation defines an asymmetric pattern where each of the plurality of fluid outlets is capable of outputting a controlled fluid toward an underside of the linear polishing belt.
摘要翻译：公开了压盘。压板包括用于在化学机械抛光（CMP）操作期间支撑线性抛光带的一部分的支撑表面。压盘还包括定向在整个支撑表面上的多个流体出口。取向限定了不对称图案，其中多个流体出口中的每一个能够将受控流体输出到线性抛光带的下侧。

3. 发明授权

US06752898B1 Method and apparatus for an air bearing platen with raised topography 失效
标题翻译：具有凸起形状的空气轴承压板的方法和装置
公开(公告)号：US06752898B1
公开(公告)日：2004-06-22
申请号：US10327565
申请日：2002-12-20
申请人： Robert L. Anderson, II , Robert Charatan , Travis Robert Taylor
发明人： Robert L. Anderson, II , Robert Charatan , Travis Robert Taylor
IPC分类号： B24B2100
CPC分类号： B24B21/10 , B24B37/04
摘要： An invention is provided for a CMP apparatus that enhances removal rate uniformity. The CMP apparatus includes a polishing belt disposed below a carrier head that is capable of applying a wafer to the polishing belt. Also included is a platen disposed below the polishing belt. The platen includes a circular shim section disposed on the top surface of the platen. The circular shim section is higher than the top surface of the platen. When using this configuration, increasing pressure to the backside of the polishing belt decreases the edge removal rate of the wafer. Conversely, decreasing pressure to the backside of the polishing belt increases the edge removal rate of the wafer.
摘要翻译：提供了一种用于增强去除速率均匀性的CMP设备的发明。 CMP装置包括设置在能够将晶片施加到抛光带的载体头下方的抛光带。还包括设置在抛光带下方的压板。压盘包括设置在压板的顶表面上的圆形垫片部分。圆形垫片部分高于压板的顶部表面。当使用这种配置时，增加对抛光带背面的压力降低了晶片的边缘去除速率。相反，降低抛光带背面的压力增加了晶片的边缘去除率。

4. 发明授权

US06991512B2 Apparatus for edge polishing uniformity control 失效
公开(公告)号：US06991512B2
公开(公告)日：2006-01-31
申请号：US10029958
申请日：2001-12-21
申请人： Travis Robert Taylor , Cangshan Xu
发明人： Travis Robert Taylor , Cangshan Xu
IPC分类号： B24B7/22
CPC分类号： B24B37/16 , B24B21/04
摘要： An invention is provided for a platen for use in a CMP system. The platen includes an inner set of pressure sub regions capable of providing pressure to a polishing pad disposed above the platen. Each of the inner pressure sub regions is disposed below a wafer and within a circumference of the wafer. In addition, the platen includes an outer set of pressure sub regions capable of providing pressure to a polishing pad. Each of the outer set of pressure sub regions is disposed below the wafer and outside the circumference of the wafer. In this manner, the outer set of pressure sub regions is capable of shaping the polishing pad to achieve a particular removal rate.

5. 发明授权

US06769970B1 Fluid venting platen for optimizing wafer polishing 失效
标题翻译：流体排气台，用于优化晶圆抛光
公开(公告)号：US06769970B1
公开(公告)日：2004-08-03
申请号：US10186909
申请日：2002-06-28
申请人： Travis Robert Taylor , Alan Jensen
发明人： Travis Robert Taylor , Alan Jensen
IPC分类号： B24B100
CPC分类号： B24B37/16 , B24B21/10
摘要： A platen is provided for use in a chemical mechanical planarization (CMP) system. The platen includes at least one fluid output zone having a plurality of fluid outlets, the at least one fluid output zone being disposed below a polishing pad and being capable of providing fluid pressure to the polishing pad. The platen also includes at least one fluid input zone having a plurality of fluid inlets, the at least one fluid input zone being disposed below the polishing pad and being capable of removing the fluid pressure. The platen is capable of managing fluid pressure applied to the polishing pad to achieve a particular polishing profile during a CMP operation.
摘要翻译：提供了用于化学机械平面化（CMP）系统的压板。压板包括具有多个流体出口的至少一个流体输出区域，该至少一个流体输出区域设置在抛光垫的下方并且能够向抛光垫提供流体压力。压盘还包括具有多个流体入口的至少一个流体输入区域，该至少一个流体输入区域设置在抛光垫的下方并且能够去除流体压力。压板能够管理施加到抛光垫的流体压力，以在CMP操作期间实现特定的抛光轮廓。

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