专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

2. 发明授权

US06373298B1 Enhanced voltage drive circuit for HDD write driver 有权
标题翻译：用于HDD写入驱动器的增强型电压驱动电路
公开(公告)号：US06373298B1
公开(公告)日：2002-04-16
申请号：US09772770
申请日：2001-01-30
申请人： Patrick Teterud , Thomas Van Eaton
发明人： Patrick Teterud , Thomas Van Eaton
IPC分类号： H03K300
CPC分类号： H03K17/04166 , H03K17/567 , H03K17/662
摘要： A HDD write driver circuit (30) having two sets of boost devices (Q1, M2, and Q2, M1) which are temporarily turned on during a current reversal to boost the normal current and increase the differential transient voltage across the coil (LS) while decreasing the TRTF. During a current reversal cycle, one set of transistors is turned on while the other set is left off. The on set to pulls the node at one end of the coil substantially to the positive rail, and pulls the other node at the other end of the coil substantially to the lower rail (Vee). The boost FETs (M1, M2) are preferably large PMOS devices that must be driven hard to achieve a quick transient switching time. Advantageously, when one of the PMOS FETs (M1, M2) are on, the associated series resistor (RS) is bypassed. The voltage at nodes HX and HY are no longer limited by an IR voltage drop associated with a resister (RS) therefore increasing the differential transient voltage across nodes HX and HY by increasing the maximum transient voltage of the pull-up node. Preferably, each node (HX, HY) of the coil (LS) can be pulled to within 0.2 volts of the positive rail.
摘要翻译：一种具有两组升压装置（Q1，M2和Q2，M1）的HDD写入驱动器电路（30），其在电流反向期间暂时导通，以升高正常电流并增加线圈（LS）两端的差动瞬态电压，同时减少TRTF。在电流反转周期期间，一组晶体管导通，而另一组晶体管关闭。该线圈将线圈的一端的节点基本上拉至正导轨，并将线圈另一端的另一节点基本拉到下导轨（Vee）。升压FET（M1，M2）优选是必须被驱动以实现快速瞬态切换时间的大型PMOS器件。有利的是，当一个PMOS FET（M1，M2）导通时，相关的串联电阻（RS）被旁路。节点HX和HY处的电压不再受与电阻（RS）相关联的IR电压降限制，因此通过增加上拉节点的最大瞬态电压来增加节点HX和HY两端的差分瞬态电压。优选地，线圈（LS）的每个节点（HX，HY）可以被拉到正轨的0.2伏以内。

IPRDB

热门服务

关于我们

友情链接

联系方式