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    • 1. 发明授权
    • Integrated infrared detection system
    • 集成红外检测系统
    • US6091127A
    • 2000-07-18
    • US831815
    • 1997-04-02
    • Dipankar ChandraDonald F. WeirauchThomas C. Penn
    • Dipankar ChandraDonald F. WeirauchThomas C. Penn
    • H01L27/144H01L31/103H01L29/225H01L31/0296H01L31/0336H01L31/105
    • H01L31/1032H01L27/1443
    • This is an integral IR detector system with at least two epitaxial HgCdTe sensors on integrated silicon or GaAs circuitry and also a method of fabricating such system. The system can comprise: a) integrated silicon or GaAs circuitry 110; b) an epitaxial lattice-match layer (e.g. ZnSe 114) on a top surface of the circuit; c) an epitaxial insulating layer (e.g. CdTe 102) on the lattice-match layer; and d) at least two epitaxial HgCdTe sensors 101,121 on the insulating layer, with the HgCdTe sensors being electrically connected to the circuitry. Preferably, the circuitry is silicon. Preferably, an IR transparent, spacer layer (e.g. CdTe 120 or CdZnTe) is on the HgCdTe sensors and an HgCdTe filter 122 is on the spacer layer. Preferably, at least one of the HgCdTe sensors and the HgCdTe filter is laterally continuously graded.
    • 这是一个集成的IR检测器系统,在集成硅或GaAs电路上具有至少两个外延HgCdTe传感器,也是制造这种系统的方法。 该系统可以包括:a)集成硅或GaAs电路110; b)在电路的顶表面上的外延晶格匹配层(例如ZnSe 114); c)在晶格匹配层上的外延绝缘层(例如CdTe 102); 和d)绝缘层上的至少两个外延HgCdTe传感器101,121,其中HgCdTe传感器电连接到电路。 优选地,电路是硅。 优选地,IR透明隔离层(例如CdTe 120或CdZnTe)位于HgCdTe传感器上,并且HgCdTe过滤器122位于间隔层上。 优选地,HgCdTe传感器和HgCdTe过滤器中的至少一个横向连续分级。
    • 3. 发明授权
    • Laser pattern/inspector with a linearly ramped chirp deflector
    • 具有线性斜坡啁啾偏转器的激光图案/检查员
    • US5592211A
    • 1997-01-07
    • US396358
    • 1995-02-28
    • Vernon R. PorterWilliam G. MannsAnthony B. WoodJerry D. MerrymanDon J. WeeksS. Charles BaberThomas C. Penn
    • Vernon R. PorterWilliam G. MannsAnthony B. WoodJerry D. MerrymanDon J. WeeksS. Charles BaberThomas C. Penn
    • G02B26/10G03F7/20G06K15/12B41J15/16
    • G03F7/70633G02B26/10G03F7/704G03F7/70641G06K15/1204
    • A laser pattern inspection and/or writing system which writes or inspects a pattern on a target on a stage, by raster scanning the target pixels. Inspection can also be done by substage illumination with non-laser light. A database, organized into frames and strips, represents an ideal pattern as one or more polygons. Each polygon's data description is contained within a single data frame. The database is transformed into a turnpoint polygon representation, then a left and right vector representation, then an addressed pixel representation, then a bit-mapped representation of the entire target. Most of the transformations are carried out in parallel pipelines. Guardbands around polygon sides are used for error filtering during inspection. Guardbands are polygons, and frames containing only guardband information are sent down dedicated pipelines. Error filtering also is done at the time of pixel comparisons of ideal with real patterns, and subsequently during defect area consolidation. Defect areas are viewed as color overlays of ideal and actual target areas, from data generated during real time. Defect areas can be de-zoomed to allow larger target areas to be viewed. An autofocus keeps the scanning laser beam in focus on the target. The inspection system is used to find fiducial marks to orient the target prior to raster scanning. IC bars are provided with alignment marks for locating each IC bar. Interferometers or glass scale encoders allow the stage position to be known.
    • 激光图案检查和/或写入系统,其通过光栅扫描目标像素来写入或检查在舞台上的目标上的图案。 检查也可以通过非激光的分层照明进行。 组织成框架和条带的数据库表示作为一个或多个多边形的理想模式。 每个多边形的数据描述都包含在单个数据帧中。 将数据库转换为转折点多边形表示,然后转换为左和右向量表示,然后转换为寻址像素表示,然后是整个目标的位映射表示。 大多数转换是在并行管道中进行的。 多边形周围的保护带用于检查过程中的错误过滤。 保卫带是多边形,仅包含保护带信息的帧被发送到专用管道。 在理想与实际图案的像素比较时,随后在缺陷区域合并期间,也进行误差滤波。 缺陷区域被视为理想和实际目标区域的颜色叠加,从实时生成的数据。 缺陷区域可以去放大,以允许查看较大的目标区域。 自动对焦将扫描激光束保持在目标上。 检查系统用于在光栅扫描之前找到基准标记来定向目标。 IC条具有用于定位每个IC条的对准标记。 干涉仪或玻璃刻度尺可以让舞台位置知道。
    • 4. 发明授权
    • Method for removing photoresist layer from substrate by ozone treatment
    • 通过臭氧处理从基底去除光致抗蚀剂层的方法
    • US4341592A
    • 1982-07-27
    • US601861
    • 1975-08-04
    • Samuel R. ShortesThomas C. Penn
    • Samuel R. ShortesThomas C. Penn
    • H01L21/302G03F7/42H01L21/027H01L21/30H01L21/3065H01L21/311B44C1/22C03C15/00C23F1/00H01L21/306
    • H01L21/31138G03F7/42
    • Method and apparatus for removing a photoresist layer from a substrate surface of different material, such as a semiconductor slice, in the fabrication of an electronic structure, involving exposure of the photoresist layer to an ozone-containing gaseous atmosphere in a reaction zone of a reactor. The ozone is present as an active reagent in the gaseous atmosphere to which the layer of photoresist material is exposed in an amount sufficient to react with all of the photoresist material in the layer thereof, with the photoresist material being removed from the underlying substrate surface in response to its exposure to the ozone. The photoresist material being treated by the ozone for stripping thereof may be either a negative or positive photoresist. Gaseous reaction products resulting from treatment of the substrate and removal of the photoresist layer therefrom are directed through an ozone reduction chamber prior to the discharge of the exhaust gases created by the reaction of the ozone with the photoresist material, wherein any excess ozone contained in the exhaust gases is reduced to molecular oxygen.
    • 用于在电子结构的制造中从不同材料(例如半导体片)的衬底表面去除光致抗蚀剂层的方法和装置,包括在反应器的反应区中将光致抗蚀剂层暴露于含臭氧的气态气氛 。 臭氧作为活性试剂存在于气态气氛中,光致抗蚀剂材料层以足以与其中的所有光致抗蚀剂材料反应的量暴露于光致抗蚀剂材料层,光致抗蚀剂材料从下面的基底表面被去除 对其暴露于臭氧的反应。 被臭氧处理以除去的光致抗蚀剂材料可以是负性或正性光致抗蚀剂。 通过处理基材和从其中除去光致抗蚀剂层而产生的气态反应产物在通过臭氧与光致抗蚀剂材料的反应产生的废气排出之前通过臭氧还原室引导,其中包含在 废气被还原成分子氧。
    • 5. 发明授权
    • Heat activated dry development of photoresist by means of active oxygen
atmosphere
    • 通过活性氧气氛热激活干燥光刻胶
    • US5024918A
    • 1991-06-18
    • US754041
    • 1976-12-23
    • Vernon R. PorterThomas C. Penn
    • Vernon R. PorterThomas C. Penn
    • G03F7/04G03F7/36
    • G03F7/36G03F7/04
    • Heat activated method for developing and improving the definition of a patterned heat-photoresist layer as applied to a substrate surface of different material, such as a semiconductor slice, in the fabrication of an electronic structure or photomask, through the use of a reactive species of oxygen including monatomic oxygen or ozone in an oxygen-containing gas. A layer of photoresist material upon being selectively exposed to an energy source, such as ultraviolet radiation, X-ray, or E-beam radiation acquires a predetermined patterned definition therein because of chemical changes in the photoresist material which is photosensitive. After such selective exposure, the photoresist layer is characterized by a differential reactivity which is heightened by a chemical or a physical change occurring in either one of the exposed or unexposed portions of the layer of photoresist material enabling the selective removal thereof. In a preferred embodiment, the photoresist material is of a character undergoing a reduction in thickness in areas unexposed to the energy source which may be accentuated by a further heat treatment to produce regions of reduced thickness in the photoresist layer corresponding to the desired pattern. The regions of photoresist material of reduced thickness are then selectively removed from the layer of photoresist material by the differential reaction of the gaseous reactive oxygen species therewith to develop the pattern in the layer of photoresist material as defined by its selective exposure to the energy source.
    • 热激活方法用于显影和改进图案化热致抗蚀剂层的定义,其应用于电子结构或光掩模的制造中的诸如半导体片的不同材料的衬底表面,通过使用反应性物质 在含氧气体中包括单原子氧或臭氧的氧。 选择性地暴露于诸如紫外线辐射,X射线或电子束辐射的能量源的光致抗蚀剂材料层由于光致抗蚀剂材料中的化学变化而获得预定的图案化定义。 在这种选择性曝光之后,光致抗蚀剂层的特征在于差异反应性,其由在光致抗蚀剂材料层的曝光或未曝光部分中的任一个中发生的化学或物理变化而升高,从而能够进行选择性去除。 在优选实施例中,光致抗蚀剂材料具有在未暴露于能量源的区域中经历厚度减小的特征,其可以通过进一步的热处理来加强,以在对应于期望图案的光致抗蚀剂层中产生厚度减小的区域。 然后通过气态活性氧的差异反应从光致抗蚀剂材料层中选择性地除去厚度减小的光致抗蚀剂材料的区域,以形成光刻胶材料层中的图案,如通过其选择性暴露于能量源所界定的。
    • 6. 发明授权
    • Laser scanner using focusing acousto-optic device
    • 激光扫描仪采用聚焦声光装置
    • US4912487A
    • 1990-03-27
    • US173775
    • 1988-03-25
    • Vernon R. PorterWilliam G. MannsAnthony B. WoodS. Charles BaberThomas C. Penn
    • Vernon R. PorterWilliam G. MannsAnthony B. WoodS. Charles BaberThomas C. Penn
    • B23K26/08G01N21/95G03F7/20
    • G03F7/70633B23K26/0853G01N21/956G03F7/704G03F7/70641G03F7/70725G01N21/9501
    • A laser pattern inspection and/or writing system which writes or inspects a pattern on a target on a stage, by raster scanning the target pixels. Inspection can also be done by substage illumination with non-laser light. A database, organized into frames and strips, represents an ideal pattern as one or more polygons. Each polygon's data description is contained within a single data frame. The database is transformed into a turnpoint polygon representation, then a left and right vector representation, then an addressed pixel representation, then a bit-mapped representation of the entire target. Most of the transformations are carried out in parallel pipelines. Guardbands around polygon sides are used for error filtering during inspection. Guardbands are polygons, and frames containing only guardband information are sent down dedicated pipelines. Error filtering also is done at the time of pixel comparisons of ideal with real patterns, and subsequently during defect area consolidation. Defect areas are viewed as color overlays of ideal and actual target areas, from data generated during real time. Defect areas can be de-zoomed to allow larger target areas to be viewed. An autofocus keeps the scanning laser beam in focus on the target. The inspection system is used to find fiducial marks to orient the target prior to raster scanning. IC bars are provided with alignment marks for locating each IC bar. Interferometers or glass scale encoders allow the stage position to be known.
    • 激光图案检查和/或写入系统,其通过光栅扫描目标像素来写入或检查在舞台上的目标上的图案。 检查也可以通过非激光的分层照明进行。 组织成框架和条带的数据库表示作为一个或多个多边形的理想模式。 每个多边形的数据描述都包含在单个数据帧中。 将数据库转换为转折点多边形表示,然后转换为左和右向量表示,然后转换为寻址像素表示,然后是整个目标的位映射表示。 大多数转换是在并行管道中进行的。 多边形周围的保护带用于检查过程中的错误过滤。 保卫带是多边形,仅包含保护带信息的帧被发送到专用管道。 在理想与实际图案的像素比较时,随后在缺陷区域合并期间,也进行误差滤波。 缺陷区域被视为理想和实际目标区域的颜色叠加,从实时生成的数据。 缺陷区域可以去放大,以允许查看较大的目标区域。 自动对焦将扫描激光束保持在目标上。 检查系统用于在光栅扫描之前找到基准标记来定向目标。 IC条具有用于定位每个IC条的对准标记。 干涉仪或玻璃刻度尺可以让舞台位置知道。
    • 8. 发明授权
    • Method for removing resist layer from substrate with combustible gas
burnoff
    • 从可燃气体燃烧的基板上去除抗蚀剂层的方法
    • US4296146A
    • 1981-10-20
    • US856900
    • 1977-12-02
    • Thomas C. Penn
    • Thomas C. Penn
    • H01L21/30G03F7/42H01L21/027H01L21/302H01L21/3065H01L21/311H05K3/28B05D5/12
    • G03F7/42H01L21/31138H05K3/288
    • Method and apparatus for removing a resist layer from a substrate surface of different material, such as a semiconductor slice, in the fabrication of an electronic structure, involving exposure of the resist layer to a flame from a combustible gas. The resist layer is employed as a mask in patterning the substrate surface via selective etching, diffusion, or other procedures and is removed from the substrate when it has served its purpose. The resist material may include not only light-sensitive resists more commonly termed "photoresists", but also electron beam-sensitive resists, and resists applied by stencil techniques. The resist layer is exposed to the flame for a period of time sufficient to decompose the resist material, the length of the exposure being a function of several factors, including the type of resist, the thickness of the layer, and the manufacturing processes to which the slice was subjected prior to the resist removal step. No vacuum or other special ambient atmospheric condition is required for this resist removal process, but the slice may be positioned on a belt or other mobile platform and the means for producing the flame may also be adjustable in order to effectively vary the parameters of exposure time and temperature, depending on the aforementioned factors.
    • 在电子结构的制造中,包括将抗蚀剂层暴露于来自可燃性气体的火焰的方法和装置,用于从不同材料的诸如半导体层的衬底表面去除抗蚀剂层。 抗蚀剂层用作通过选择性蚀刻,扩散或其它方法对衬底表面进行图案化的掩模,并且当其用于其目的时从衬底去除。 抗蚀剂材料不仅可以包括通常被称为“光致抗蚀剂”的光敏抗蚀剂,而且还可以包括电子束敏感抗蚀剂和通过模板技术施加的抗蚀剂。 抗蚀剂层暴露于火焰一段足以分解抗蚀剂材料的时间,曝光长度是几个因素的函数,包括抗蚀剂的类型,层的厚度和制造过程,其中 在抗蚀剂去除步骤之前进行切片。 该抗蚀剂除去过程不需要真空或其他特殊的环境大气条件,但是切片可以定位在带或其他移动平台上,并且用于产生火焰的装置也可以是可调节的,以便有效地改变曝光时间的参数 和温度,这取决于上述因素。
    • 10. 发明授权
    • Method of fabricating a laterally continuously graded mercury cadmium
telluride layer
    • 制造横向连续分级的碲化镉层的方法
    • US6036770A
    • 2000-03-14
    • US831813
    • 1997-04-02
    • Dipankar ChandraDonald F. WeirauchThomas C. Penn
    • Dipankar ChandraDonald F. WeirauchThomas C. Penn
    • C30B19/02C30B19/04C30B33/02
    • C30B19/02C30B19/04C30B29/48
    • Methods are described for the depositing of a plurality of films, preferably mercury cadmium telluride (HgCdTe), whose compositions vary in a controlled manner to provide unique infrared spectral absorption and detection properties. HgCdTe films 64 and 70 are deposited on opposite sides of electrically insulating, IR transmissive film 42. Initially these HgCdTe films may be of uniform composition laterally from 62 to 66 and 68 to 72. However the interdiffusion and segregation coefficients of Hg and Cd are different and vary differently with respect to temperature. By placing film 70 in contact with heater 9, a controlled lateral gradient in composition of the film may be effected because 44 is hotter than 45 and will produce higher Cd concentration at 68 than 72. Similarly 62 will be higher in Cd than 66, however, the gradient will be much less because 64 is cooler than 70. Through the use of a heater 60, the lateral compositional gradient of 64 may be varied with respect to film 70. The close tracking of the IR properties of 70 and 64 can provide useful and novel integrated IR devices such as multiple band spectrometers.
    • 描述了沉积多个膜,优选汞碲化镉(HgCdTe)的方法,其组成以受控的方式变化以提供独特的红外光谱吸收和检测特性。 HgCdTe膜64和70沉积在电绝缘的IR透射膜42的相对侧上。最初,这些HgCdTe膜在62至66和68至72之间可以具有均匀的组成。然而Hg和Cd的相互扩散和偏析系数不同 并且相对于温度变化不同。 通过将膜70放置成与加热器9接触,可以实现膜的组成控制的横向梯度,因为44比45高,并且将在68比72产生更高的Cd浓度。类似地,62在Cd中将高于66,但是 ,因为64比70更冷,所以梯度将会更小。通过使用加热器60,64的侧向组成梯度可以相对于膜70而变化。70和64的IR特性的紧密跟踪可以提供 有用和新颖的集成IR设备,如多频带光谱仪。