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    • 2. 发明申请
    • Image comparing apparatus using features of partial images
    • 使用部分图像特征的图像比较装置
    • US20060210170A1
    • 2006-09-21
    • US11376268
    • 2006-03-16
    • Manabu YumotoYasufumi ItohManabu OnozakiTakashi HoriyamaTeruaki MoritaMasayuki Ehiro
    • Manabu YumotoYasufumi ItohManabu OnozakiTakashi HoriyamaTeruaki MoritaMasayuki Ehiro
    • G06K9/46G06K9/68G06K9/36G06K9/32
    • G06K9/0008G06K9/00093
    • An image comparing apparatus receives two images to be compared with each other. For each of the two images, respective feature values of partial images in the image are determined. With respect to each partial image in one of the images, the position of a partial image that is in the other image and that has the maximum score of matching with the partial image in that one image is searched for. The search range is limited to partial images selected according to three or five different feature values determined in advance. Then, the similarity score representing the degree of similarity between these two images is calculated, based on information about a movement vector indicating a relation between a reference position for locating the partial image in one image and the maximum matching score position that is searched for with respect to the partial image. Images to be searched belong to the same category as that of the partial image. Here, the images are classified into categories based on the feature values.
    • 图像比较装置接收要彼此比较的两个图像。 对于两个图像中的每一个,确定图像中的部分图像的各自的特征值。 对于其中一个图像中的每个部分图像,搜索位于另一图像中并且具有与该图像中的部分图像匹配的最大分数的部分图像的位置。 搜索范围限于根据预先确定的三个或五个不同特征值选择的部分图像。 然后,基于关于指示用于定位一个图像中的部分图像的参考位置与用于定位一个图像中的部分图像的最大匹配分数位置之间的关系的运动矢量的信息,计算表示这两个图像之间的相似度的相似度分数, 尊重部分图像。 要搜索的图像属于与部分图像相同的类别。 这里,基于特征值将图像分类为类别。
    • 3. 发明授权
    • Nonvolatile semiconductor memory device, and programming method and erasing method thereof
    • 非易失性半导体存储器件及其编程方法及其擦除方法
    • US06992920B2
    • 2006-01-31
    • US10872100
    • 2004-06-17
    • Yukio TamaiKohji InoueTeruaki Morita
    • Yukio TamaiKohji InoueTeruaki Morita
    • G11C11/00
    • G11C13/0007G11C13/0069G11C16/3427G11C2013/009G11C2213/31G11C2213/77
    • One end of each variable resistive element, which forms a memory array, in the same row is connected to the same word line and the other end of each variable resistive element in the same column is connected to the same bit line. A first word line voltage is selected and applied to the selected word line, a second word line voltage is selected and applied to the unselected word lines, a first bit line voltage is selected and applied to the selected bit line, and a second bit line voltage is selected and applied to the unselected bit lines. The voltage difference between the first word line voltage and the first bit line voltage is set at a value that is no less than the first voltage difference that changes the resistance value of a variable resistive element, and the voltage difference between the first word line voltage and the second bit line voltage, the voltage difference between the second word line voltage and the first bit line voltage and the voltage difference between the second word line voltage and the second bit line voltage are respectively set at a value that is no greater than the second voltage difference that does not change the resistance value of a variable resistive element.
    • 在相同行中形成存储器阵列的每个可变电阻元件的一端连接到相同的字线,并且同一列中的每个可变电阻元件的另一端连接到相同的位线。 选择第一字线电压并将其施加到所选字线,选择第二字线电压并将其施加到未选字线,选择第一位线电压并将其施加到所选择的位线,并且将第二位线电压施加到第二位线 电压被选择并施加到未选择的位线。 将第一字线电压与第一位线电压之间的电压差设定为不小于改变可变电阻元件的电阻值的第一电压差和第一字线电压之间的电压差 和第二位线电压,将第二字线电压与第一位线电压之间的电压差和第二字线电压与第二位线电压之间的电压差分别设定为不大于 不改变可变电阻元件的电阻值的第二电压差。