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1. 发明授权

US08674587B2 Ultrasonic transducer and fabricating the same 失效
标题翻译：超声波换能器和制造相同
公开(公告)号：US08674587B2
公开(公告)日：2014-03-18
申请号：US13167276
申请日：2011-06-23
申请人： Takashi Togasaki , Takeshi Miyagi , Satoru Asagiri , Michiko Ooishi
发明人： Takashi Togasaki , Takeshi Miyagi , Satoru Asagiri , Michiko Ooishi
IPC分类号： H04R31/00
CPC分类号： B06B1/0622 , G10K9/125 , H01L41/22 , Y10T29/42 , Y10T29/49005
摘要： An aspect of one embodiment, there is provided an ultrasonic transducer including a plurality of oscillators, each of the oscillator having a convex portion, a printed wiring board provided to be opposed to the convex portion, an adhesive material including at least a portion of the convex portion, the adhesive material joining the oscillator and the printed wiring board, and a resin provided between the oscillator and the printed wiring board, the resin covering the convex portion and the adhesive material.
摘要翻译：一个实施例的方面，提供了一种包括多个振荡器的超声波换能器，每个振荡器具有凸部，设置成与凸部相对的印刷线路板，至少包括一部分连接振荡器和印刷线路板的粘合材料以及设置在振荡器和印刷线路板之间的树脂，覆盖凸部的树脂和粘合材料。

2. 发明申请

US20120235291A1 SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20120235291A1
公开(公告)日：2012-09-20
申请号：US13405665
申请日：2012-02-27
申请人： Masayuki UCHIDA , Takashi TOGASAKI , Satoru HARA , Kentaro SUGA
发明人： Masayuki UCHIDA , Takashi TOGASAKI , Satoru HARA , Kentaro SUGA
IPC分类号： H01L23/34 , H01L21/60
CPC分类号： H01L23/367 , H01L23/42 , H01L23/492 , H01L24/26 , H01L24/29 , H01L24/83 , H01L2224/26165 , H01L2224/26175 , H01L2224/291 , H01L2224/32245 , H01L2224/33181 , H01L2224/8314 , H01L2224/83815 , H01L2924/00013 , H01L2924/01029 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/351 , H01L2924/014 , H01L2924/00014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： According to one embodiment, a semiconductor apparatus includes a semiconductor device, a heat spreader, a regulating unit, a containing unit, and a holding unit. The heat spreader is bonded to the semiconductor device with an interposed solder layer. The regulating unit is configured to regulate a dimension between the semiconductor device and the heat spreader. The containing unit is configured to contain melted solder in an interior of the containing unit. The holding unit is configured to allow melted solder held in an interior of the holding unit. The holding unit is configured to replenish the melted solder in the case where an amount of the melted solder contained in the containing unit is insufficient. The holding unit is configured to recover the melted solder in the case where the amount of the melted solder contained in the containing unit is excessive.
摘要翻译：根据一个实施例，半导体装置包括半导体器件，散热器，调节单元，容纳单元和保持单元。散热器通过插入的焊料层与半导体器件接合。调节单元构造成调节半导体器件和散热器之间的尺寸。容纳单元构造成在容纳单元的内部容纳熔融的焊料。保持单元被配置为允许保持在保持单元的内部的熔融焊料。保持单元构造为在容纳单元中所含的熔融焊料的量不足的情况下补充熔融的焊料。保持单元被配置为在容纳单元中包含的熔融焊料的量过多的情况下回收熔融的焊料。

3. 发明申请

US20120028463A1 MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS 有权
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US20120028463A1
公开(公告)日：2012-02-02
申请号：US13267048
申请日：2011-10-06
申请人： Tatsuo Migita , Hirokazu Ezawa , Tadashi Iijima , Takashi Togasaki
发明人： Tatsuo Migita , Hirokazu Ezawa , Tadashi Iijima , Takashi Togasaki
IPC分类号： H01L21/768
CPC分类号： H01L23/525 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/17 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L25/18 , H01L2224/0401 , H01L2224/05548 , H01L2224/13027 , H01L2224/13099 , H01L2224/131 , H01L2224/1403 , H01L2224/14051 , H01L2225/06513 , H01L2225/06527 , H01L2225/06568 , H01L2924/0001 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/30105
摘要： A first conducting layer is formed on a side of a main surface on which an electrode terminal of a semiconductor device is provided in a semiconductor substrate. The first conducting layer is electrically connected to the electrode terminal of the semiconductor device. A mask layer that has an opening at a predetermined position is formed on the first conducting layer. A second conducting layer is formed inside the opening of the mask layer. The mask layer is removed. A relocation wiring that includes the first conducting layer and electrically draws out the electrode terminal is formed by performing anisotropic etching for the first conducting layer using the second conducting layer as a mask. Finally, a bump is formed on the relocation wiring by causing the second conducting layer to reflow.
摘要翻译：第一导电层形成在半导体衬底中设置半导体器件的电极端子的主表面的一侧。第一导电层电连接到半导体器件的电极端子。在第一导电层上形成有在预定位置具有开口的掩模层。在掩模层的开口内形成第二导电层。去除掩模层。通过使用第二导电层作为掩模对第一导电层进行各向异性蚀刻，形成包括第一导电层并电拔出电极端子的重定位布线。最后，通过使第二导电层回流而在位移配线上形成凸点。

4. 发明授权

US08703600B2 Electronic component and method of connecting with multi-profile bumps 有权
标题翻译：电子元器件和连接多轮廓凸块的方法
公开(公告)号：US08703600B2
公开(公告)日：2014-04-22
申请号：US12721741
申请日：2010-03-11
申请人： Tatsuo Migita , Hirokazu Ezawa , Soichi Yamashita , Takashi Togasaki
发明人： Tatsuo Migita , Hirokazu Ezawa , Soichi Yamashita , Takashi Togasaki
IPC分类号： H01L21/00 , H01L21/44
CPC分类号： H01L24/11 , H01L24/73 , H01L25/0657 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05572 , H01L2224/05655 , H01L2224/13099 , H01L2224/1403 , H01L2224/16145 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/45147 , H01L2224/48227 , H01L2224/48463 , H01L2224/73204 , H01L2224/73207 , H01L2224/73265 , H01L2225/0651 , H01L2225/06513 , H01L2225/06568 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/09701 , H01L2924/1306 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： An electronic component in which an element is formed on a chip includes: a pad that is made of a conductive material and that is formed in a first bump formation region that is two-dimensionally arranged in center of one principle face and in a second bump formation region that is linearly arranged at peripheral border of the principle face; a passivation film that is formed on the principle face to cover portion except a formation position of the pad; a metal layer that is formed on the pad; and a bump that is made of a conductive material and that is formed on the metal layer by plating, wherein radius of the metal layer in the second bump formation region is smaller than radius of at least some of the metal layer in the first bump formation region.
摘要翻译：其中元件形成在芯片上的电子部件包括：由导电材料制成并且形成在二维布置在一个原理面的中心的第一凸块形成区域中的衬垫和在第二凸起在原理面的周边边缘线性排列的形成区域; 钝化膜，其形成在除了所述焊盘的形成位置之外的所述原理面上以覆盖部分; 形成在所述垫上的金属层; 以及由导电材料制成并且通过电镀在金属层上形成的凸块，其中第二凸块形成区域中的金属层的半径小于第一凸块形成中的至少一些金属层的半径地区。

5. 发明申请

US20130043594A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20130043594A1
公开(公告)日：2013-02-21
申请号：US13572553
申请日：2012-08-10
申请人： Yo Sasaki , Atsushi Yamamoto , Kazuya Kodani , Yuji Hisazato , Takashi Togasaki , Hideaki Kitazawa
发明人： Yo Sasaki , Atsushi Yamamoto , Kazuya Kodani , Yuji Hisazato , Takashi Togasaki , Hideaki Kitazawa
IPC分类号： H01L21/50 , H01L23/482
CPC分类号： C22C9/02 , C22C28/00 , H01L23/3735 , H01L23/488 , H01L23/562 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/32225 , H01L2224/48227 , H01L2224/83825 , H01L2924/01322 , H01L2924/01327 , H01L2924/15747 , H01L2924/351 , H01L2924/00
摘要： According to one embodiment, between the mounting substrate and the semiconductor chip, there is a joint support layer including a metal or its alloy selected from the group of Cu, Al, Ag, Ni, Cr, Zr and Ti and a melt layer laminated across the joint support layer, and formed of a metal selected from the group of Sn, Zn and In or of an alloy of at least two metals selected from the same metals. The process of joining the mounting substrate and the semiconductor chip includes intervening a joining layer which is formed, at least for its outermost layer, by the melt layer, maintaining the temperature to be higher than the melting point of the melt layer, then forming an alloy layer which has a higher melting point than the melt layer by liquid phase diffusion.
摘要翻译：根据一个实施例，在安装基板和半导体芯片之间，存在包括选自Cu，Al，Ag，Ni，Cr，Zr和Ti的金属或其合金的接合支撑层，以及层压的熔融层接合支撑层，并且由选自Sn，Zn和In的金属或选自相同金属的至少两种金属的合金形成。连接安装基板和半导体芯片的工艺包括至少在其最外层由熔融层形成的接合层，将熔体层的温度维持在高于熔融层的熔点，然后形成合金层通过液相扩散具有比熔体层更高的熔点。

6. 发明授权

US08063487B2 Manufacturing method of semiconductor apparatus and semiconductor apparatus 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US08063487B2
公开(公告)日：2011-11-22
申请号：US12335673
申请日：2008-12-16
申请人： Tatsuo Migita , Hirokazu Ezawa , Tadashi Iijima , Takashi Togasaki
发明人： Tatsuo Migita , Hirokazu Ezawa , Tadashi Iijima , Takashi Togasaki
IPC分类号： H01L23/48
CPC分类号： H01L23/525 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/17 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L25/18 , H01L2224/0401 , H01L2224/05548 , H01L2224/13027 , H01L2224/13099 , H01L2224/131 , H01L2224/1403 , H01L2224/14051 , H01L2225/06513 , H01L2225/06527 , H01L2225/06568 , H01L2924/0001 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/30105
摘要： A first conducting layer is formed on a side of a main surface on which an electrode terminal of a semiconductor device is provided in a semiconductor substrate. The first conducting layer is electrically connected to the electrode terminal of the semiconductor device. A mask layer that has an opening at a predetermined position is formed on the first conducting layer. A second conducting layer is formed inside the opening of the mask layer. The mask layer is removed. A relocation wiring that includes the first conducting layer and electrically draws out the electrode terminal is formed by performing anisotropic etching for the first conducting layer using the second conducting layer as a mask. Finally, a bump is formed on the relocation wiring by causing the second conducting layer to reflow.
摘要翻译：第一导电层形成在半导体衬底中设置半导体器件的电极端子的主表面的一侧。第一导电层电连接到半导体器件的电极端子。在第一导电层上形成有在预定位置具有开口的掩模层。在掩模层的开口内形成第二导电层。去除掩模层。通过使用第二导电层作为掩模对第一导电层进行各向异性蚀刻，形成包括第一导电层并电拔出电极端子的重定位布线。最后，通过使第二导电层回流而在位移配线上形成凸点。

7. 发明申请

US20050008301A1 Optical-fiber connector and display apparatus 审中-公开
标题翻译：光纤连接器和显示设备
公开(公告)号：US20050008301A1
公开(公告)日：2005-01-13
申请号：US10875516
申请日：2004-06-25
申请人： Kazuyoshi Fuse , Shigeru Kato , Takashi Togasaki
发明人： Kazuyoshi Fuse , Shigeru Kato , Takashi Togasaki
IPC分类号： G02B6/24 , G02B6/38 , G02B6/42 , G02B6/36
CPC分类号： G02B6/3801 , G02B6/3833 , G02B6/4201 , G02B6/424
摘要： An optical-fiber connector comprises a first optical fiber, a first ferrule which has a cutout portion in at least a periphery of one end face thereof and holds the first optical fiber such that a front end of the first optical fiber becomes the same face as the one end face, a second optical fiber, a second ferrule which has a cutout portion in at least a periphery of one end face thereof and holds the second optical fiber such that a front end of the second optical fiber becomes the same face as the one end face, and an adhesive which connects the one end face of the first ferrule with the one end face of the second ferrule.
摘要翻译：光纤连接器包括第一光纤，第一套圈，其在其一个端面的至少周边具有切口部分，并且保持第一光纤，使得第一光纤的前端变为与一端面，第二光纤，第二套圈，其至少在其一个端面的周围具有切口部分，并且保持第二光纤，使得第二光纤的前端变为与第二光纤相同的面一个端面和将第一套圈的一个端面与第二套圈的一个端面连接的粘合剂。

8. 发明授权

US08653651B2 Semiconductor apparatus and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08653651B2
公开(公告)日：2014-02-18
申请号：US13405665
申请日：2012-02-27
申请人： Masayuki Uchida , Takashi Togasaki , Satoru Hara , Kentaro Suga
发明人： Masayuki Uchida , Takashi Togasaki , Satoru Hara , Kentaro Suga
IPC分类号： H01L23/34
CPC分类号： H01L23/367 , H01L23/42 , H01L23/492 , H01L24/26 , H01L24/29 , H01L24/83 , H01L2224/26165 , H01L2224/26175 , H01L2224/291 , H01L2224/32245 , H01L2224/33181 , H01L2224/8314 , H01L2224/83815 , H01L2924/00013 , H01L2924/01029 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/351 , H01L2924/014 , H01L2924/00014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： According to one embodiment, a semiconductor apparatus includes a semiconductor device, a heat spreader, a regulating unit, a containing unit, and a holding unit. The heat spreader is bonded to the semiconductor device with an interposed solder layer. The regulating unit is configured to regulate a dimension between the semiconductor device and the heat spreader. The containing unit is configured to contain melted solder in an interior of the containing unit. The holding unit is configured to allow melted solder held in an interior of the holding unit. The holding unit is configured to replenish the melted solder in the case where an amount of the melted solder contained in the containing unit is insufficient. The holding unit is configured to recover the melted solder in the case where the amount of the melted solder contained in the containing unit is excessive.
摘要翻译：根据一个实施例，半导体装置包括半导体器件，散热器，调节单元，容纳单元和保持单元。散热器通过插入的焊料层与半导体器件接合。调节单元构造成调节半导体器件和散热器之间的尺寸。容纳单元构造成在容纳单元的内部容纳熔融的焊料。保持单元被配置为允许保持在保持单元的内部的熔融焊料。保持单元构造为在容纳单元中所含的熔融焊料的量不足的情况下补充熔融的焊料。保持单元被配置为在容纳单元中包含的熔融焊料的量过多的情况下回收熔融的焊料。

9. 发明授权

US08647280B2 Ultrasonic probe and method for manufacturing ultrasonic probe 失效
标题翻译：超声波探头及超声波探头制造方法
公开(公告)号：US08647280B2
公开(公告)日：2014-02-11
申请号：US13424873
申请日：2012-03-20
申请人： Michiko Ooishi , Satoru Asagiri , Takashi Togasaki , Takeshi Miyagi
发明人： Michiko Ooishi , Satoru Asagiri , Takashi Togasaki , Takeshi Miyagi
IPC分类号： A61B8/14
CPC分类号： A61B8/4444 , A61B8/4483
摘要： An ultrasonic probe includes, a transducer, a substrate includes electrodes formed on a front surface and a back surface and electronic components, first flexible wire substrates connected in such a manner that a first end is connected to the transducer and a second end is connected to a electrode at a side of the front surface of the substrate, second flexible wire substrates connected in such a manner that a first end is connected to the transducer and a second end is connected to a electrode at a side of the back surface of the substrate, and a dummy materials including the same rigidity and thickness as those of the first flexible wire substrate is arranged at a space, adjacent to a electrode at the side of the front surface of the substrate, corresponding to the second end of the second flexible wire substrate.
摘要翻译：超声波探头包括换能器，基板包括形成在前表面和后表面上的电极和电子部件，第一柔性线基板以使得第一端连接到换能器的方式连接，第二端连接到在所述基板的前表面的一侧的电极，以使得第一端连接到所述换能器的方式连接的第二柔性线基板，并且第二端连接到所述基板的背面侧的电极并且与第一柔性线基板的刚性和厚度相同的虚拟材料布置在与基板的前表面侧的电极相邻的空间处，对应于第二柔性线的第二端基质。

10. 发明申请

US20120245470A1 ULTRASONIC PROBE AND METHOD FOR MANUFACTURING ULTRASONIC PROBE 失效
标题翻译：超声探头和制造超声探头的方法
公开(公告)号：US20120245470A1
公开(公告)日：2012-09-27
申请号：US13424873
申请日：2012-03-20
申请人： Michiko Ooishi , Satoru Asagiri , Takashi Togasaki , Takeshi Miyagi
发明人： Michiko Ooishi , Satoru Asagiri , Takashi Togasaki , Takeshi Miyagi
IPC分类号： A61B8/00 , H05K13/00
CPC分类号： A61B8/4444 , A61B8/4483
摘要： An ultrasonic probe includes, a transducer, a substrate includes electrodes formed on a front surface and a back surface and electronic components, first flexible wire substrates connected in such a manner that a first end is connected to the transducer and a second end is connected to a electrode at a side of the front surface of the substrate, second flexible wire substrates connected in such a manner that a first end is connected to the transducer and a second end is connected to a electrode at a side of the back surface of the substrate, and a dummy materials including the same rigidity and thickness as those of the first flexible wire substrate is arranged at a space, adjacent to a electrode at the side of the front surface of the substrate, corresponding to the second end of the second flexible wire substrate.
摘要翻译：超声波探头包括换能器，基板包括形成在前表面和后表面上的电极和电子部件，第一柔性线基板以使得第一端连接到换能器的方式连接，第二端连接到在所述基板的前表面的一侧的电极，以使得第一端连接到所述换能器的方式连接的第二柔性线基板，并且第二端连接到所述基板的背面侧的电极并且与第一柔性线基板的刚性和厚度相同的虚拟材料布置在与基板的前表面侧的电极相邻的空间处，对应于第二柔性线的第二端基质。

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