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1. 发明授权

US06544896B1 Method for enhancing etching of TiSix 失效
标题翻译：增强TiSix蚀刻的方法
公开(公告)号：US06544896B1
公开(公告)日：2003-04-08
申请号：US09686208
申请日：2000-10-10
申请人： Songlin Xu , Takakazu Kusuki , Xueyu Qian
发明人： Songlin Xu , Takakazu Kusuki , Xueyu Qian
IPC分类号： H01L21302
CPC分类号： H01L21/32137 , H01L21/02071
摘要： Conventional methods of etching TiSix use Cl2 or HBr as the plasma etchant. However, these methods can lead to undesirable residues, due to the presence of silicon nodules in the TiSix The present invention overcomes the residue problem by adding a fluorine containing gas to the plasma etchant, which is then able to effectively etch the Si nodules at an etch rate which is approximately the same as the etch rate of the TiSix, so that the undesirable residue is not formed. A method of etching TiSix is provided, wherein the surface of the TiSix is exposed, typically through a patterned mask, to a plasma etchant. The plasma etchant comprises (i) at least one fluorine containing gas, such as SF6, NF3, CxFy, and compatible mixtures of such gases; and (ii) a gas selected from the group consisting of HBr, Cl2, and combinations thereof.
摘要翻译： TiSix的常规蚀刻方法使用Cl2或HBr作为等离子体蚀刻剂。然而，由于在TiSix中存在硅结节，这些方法可能导致不期望的残留物本发明通过向等离子体蚀刻剂中加入含氟气体来克服残留问题，其然后能够有效地将Si结节蚀刻在蚀刻速率与TiSix的蚀刻速率大致相同，从而不形成不希望的残留物。提供了蚀刻TiSix的方法，其中TiSix的表面通常通过图案化掩模暴露于等离子体蚀刻剂。等离子体蚀刻剂包括（i）至少一种含氟气体，例如SF 6，NF 3，C x F y以及这些气体的相容混合物; 和（ii）选自HBr，Cl 2及其组合的气体。

2. 发明授权

US5928965A Method for dry-etching of silicon substrate 失效
标题翻译：硅衬底的干蚀刻方法
公开(公告)号：US5928965A
公开(公告)日：1999-07-27
申请号：US909263
申请日：1997-08-11
申请人： Hideyuki Shoji , Takakazu Kusuki
发明人： Hideyuki Shoji , Takakazu Kusuki
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/308 , H01L21/76 , H01L21/00
CPC分类号： H01L21/3065 , H01L21/3086
摘要： A method for dry-etching a silicon substrate by the use of a mask selectively formed on the silicon substrate, in which method a reaction product of dry etching is deposited, during dry etching, in a uniform thickness on the side wall of each groove formed in the silicon substrate by dry etching. In the inventive method, etching is conducted by using, as an etching gas, a mixed gas containing Cl.sub.2, HBr, O.sub.2 and He or a mixed gas contained Cl.sub.2, HBr and CO, under the conditions of an etching pressure of 0.02-0.05 Torr, a RF power density of 1.01-1.64 W/cm.sup.2 and a substrate temperature of 40-50.degree. C. With this method, the tapered sectional shape of each groove formed in the silicon substrate can be controlled easily and etching can be conducted at high reproducibility.
摘要翻译：通过使用在硅衬底上选择性地形成的掩模（其中沉积有干蚀刻的反应产物）在干蚀刻中以均匀的厚度在形成的每个凹槽的侧壁上的厚度均匀地蚀刻硅衬底的方法在硅衬底中通过干蚀刻。在本发明的方法中，在蚀刻压力为0.02-0.05乇的条件下，使用含有Cl 2，HBr，O 2和He的混合气体或包含Cl 2，HBr和CO的混合气体作为蚀刻气体进行蚀刻，RF功率密度为1.01-1.64W / cm 2，基板温度为40〜50℃。通过这种方法，可以容易地控制形成在硅基板中的各槽的锥形截面形状，并且可以在高温下进行蚀刻重现性。

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