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    • 5. 发明授权
    • Apparatus and method for dry etching
    • 用于干蚀刻的设备和方法
    • US6143125A
    • 2000-11-07
    • US924282
    • 1997-09-05
    • Hideyuki Shoji
    • Hideyuki Shoji
    • H01L21/302H01J37/32H01L21/3065H01L21/311C23C16/00
    • H01J37/32963H01J37/32559H01L21/31116H01J2237/022H01J2237/2001
    • There is provided an apparatus for carrying out dry etching, including (a) an etching chamber, (b) a pair of electrodes disposed in the etching chamber in facing relation, an object to be etched being placed on one of the electrodes, (c) a plate mounted on the other of the electrodes, the plate being formed with a plurality through-holes, and (d) a pair of enclosures each mounted on each of the electrodes and extending towards the opponent to define a spatial space therebetween in which plasma is generated by introducing a reactive gas thereinto through the through-holes. The enclosures are designed to have a gap therebetween. Both the plate and the enclosures are made of material other than aluminum. The reactive gas is composed only of CF.sub.4. Since nothing other than the object is exposed to plasma, it is possible to prevent generation of particles.
    • 提供了一种用于进行干法蚀刻的装置,包括:(a)蚀刻室,(b)以蚀刻室的方式设置的一对电极,待蚀刻的物体放置在一个电极上(c )安装在另一个电极上的板,所述板形成有多个通孔,以及(d)一对壳体,每个壳体安装在每个电极上并朝着对手延伸以限定其间的空间空间,其中 通过将反应性气体引入到通孔中而产生等离子体。 外壳设计成在它们之间具有间隙。 板和外壳均由铝以外的材料制成。 反应气体仅由CF4组成。 由于除了对象之外的任何物体都暴露于等离子体,因此可以防止颗粒的产生。
    • 6. 发明授权
    • Method for dry-etching of silicon substrate
    • 硅衬底的干蚀刻方法
    • US5928965A
    • 1999-07-27
    • US909263
    • 1997-08-11
    • Hideyuki ShojiTakakazu Kusuki
    • Hideyuki ShojiTakakazu Kusuki
    • C23F4/00H01L21/302H01L21/3065H01L21/308H01L21/76H01L21/00
    • H01L21/3065H01L21/3086
    • A method for dry-etching a silicon substrate by the use of a mask selectively formed on the silicon substrate, in which method a reaction product of dry etching is deposited, during dry etching, in a uniform thickness on the side wall of each groove formed in the silicon substrate by dry etching. In the inventive method, etching is conducted by using, as an etching gas, a mixed gas containing Cl.sub.2, HBr, O.sub.2 and He or a mixed gas contained Cl.sub.2, HBr and CO, under the conditions of an etching pressure of 0.02-0.05 Torr, a RF power density of 1.01-1.64 W/cm.sup.2 and a substrate temperature of 40-50.degree. C. With this method, the tapered sectional shape of each groove formed in the silicon substrate can be controlled easily and etching can be conducted at high reproducibility.
    • 通过使用在硅衬底上选择性地形成的掩模(其中沉积有干蚀刻的反应产物)在干蚀刻中以均匀的厚度在形成的每个凹槽的侧壁上的厚度均匀地蚀刻硅衬底的方法 在硅衬底中通过干蚀刻。 在本发明的方法中,在蚀刻压力为0.02-0.05乇的条件下,使用含有Cl 2,HBr,O 2和He的混合气体或包含Cl 2,HBr和CO的混合气体作为蚀刻气体进行蚀刻 ,RF功率密度为1.01-1.64W / cm 2,基板温度为40〜50℃。通过这种方法,可以容易地控制形成在硅基板中的各槽的锥形截面形状,并且可以在高温下进行蚀刻 重现性。