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1. 发明申请

US20130063676A1 ELECTRONIC DEVICE HAVING A LIQUID CRYSTAL SHUTTER 有权
标题翻译：具有液晶快门的电子设备
公开(公告)号：US20130063676A1
公开(公告)日：2013-03-14
申请号：US13524418
申请日：2012-06-15
申请人： MORIYUKI TSUCHIHASHI , KOHJI INOUE , SUSUMU HATTORI , TAKAAKI SAKURAI , YI ZHENG
发明人： MORIYUKI TSUCHIHASHI , KOHJI INOUE , SUSUMU HATTORI , TAKAAKI SAKURAI , YI ZHENG
IPC分类号： G02F1/1333
CPC分类号： G02F1/13318 , G02F1/13338 , G02F2001/13312 , G02F2001/133388 , G06F1/1626 , G06F1/1637
摘要： An electronic device having a liquid crystal shutter is disclosed. A liquid crystal shutter is provided in an area formed by expanding a liquid crystal display. The liquid crystal shutter includes a rear polarizer, a rear glass substrate, a segmented electrode, a liquid crystal, a counter electrode, a front glass substrate, a shutter aperture, and a front polarizer. A camera module is disposed behind the rear polarizer. A voltage applied to the segmented electrode can be controlled to visually expose or hide the lens of the camera module from a shutter aperture.
摘要翻译：公开了一种具有液晶快门的电子设备。在通过使液晶显示器膨胀形成的区域中设置液晶快门。液晶快门包括后偏振器，后玻璃基板，分段电极，液晶，对电极，前玻璃基板，快门孔和前偏振器。相机模块设置在后偏振器后面。可以控制施加到分段电极的电压，以将摄像机模块的透镜从快门孔视觉曝光或隐藏。

2. 发明授权

US06963323B2 Power supply and reference voltage circuit for TFT LCD source driver 失效
标题翻译： TFT液晶源驱动器的电源和参考电压电路
公开(公告)号：US06963323B2
公开(公告)日：2005-11-08
申请号：US10156581
申请日：2002-05-24
申请人： Takaaki Sakurai , Yoshiteru Watanabe , Toshiyuki Yana , Satoshi Karube
发明人： Takaaki Sakurai , Yoshiteru Watanabe , Toshiyuki Yana , Satoshi Karube
IPC分类号： G02F1/133 , G09G3/20 , G09G3/36 , H02M3/155
CPC分类号： G09G3/3696 , G09G2330/02
摘要： A liquid crystal power supply is provided which generates a high-precision drive power supply voltage supplied to a driver circuit by using a low-precision reference voltage generating circuit. The power supply circuit includes a DC/DC converter which generates a voltage having a size based on an oscillation signal from a power supply voltage and outputs the generated voltage as a drive power supply voltage; a stabilized power supply circuit which generates a highest-level reference potential for generating a gray-scale voltage in a driver circuit; a comparison unit which outputs a difference voltage according to a difference between the drive power supply voltage and the highest-level reference potential; an internal reference voltage generating unit; an error amplifying unit which amplifies a difference between the reference voltage and the difference voltage; and a PWM conversion unit which outputs an oscillation signal in response to the amplified difference.
摘要翻译：提供一种液晶电源，其通过使用低精度基准电压产生电路产生提供给驱动电路的高精度驱动电源电压。电源电路包括DC / DC转换器，其产生具有来自电源电压的振荡信号的尺寸的电压，并将所产生的电压作为驱动电源电压输出; 稳定电源电路，其产生用于在驱动电路中产生灰度电压的最高电平参考电位; 比较单元，其根据驱动电源电压和最高电平参考电位之间的差输出差分电压; 内部参考电压产生单元; 误差放大单元，放大参考电压和差分电压之间的差; 以及PWM转换单元，其响应于放大的差值输出振荡信号。

3. 发明授权

US09534145B2 Method for forming dense silicic film 有权
标题翻译：形成致密硅膜的方法
公开(公告)号：US09534145B2
公开(公告)日：2017-01-03
申请号：US14430740
申请日：2013-10-09
申请人： Yuki Ozaki , Takaaki Sakurai , Masakazu Kobayashi
发明人： Yuki Ozaki , Takaaki Sakurai , Masakazu Kobayashi
IPC分类号： B05D3/06 , C09D183/16 , C08J7/04 , C08J7/12 , C23C18/12 , C23C18/14 , C01B21/068 , C08J7/00
CPC分类号： C09D183/16 , B05D3/067 , C01B21/068 , C08J7/00 , C08J7/047 , C08J7/123 , C08J2483/16 , C23C18/122 , C23C18/1233 , C23C18/1241 , C23C18/1245 , C23C18/14
摘要： The present invention provides a dense silicic film and a producing method thereof. This method comprises coating a composition for coating film, which comprises a polymer having a silazane bond on a substrate, on a substrate, irradiating with light having a maximal peak in the range of 160-179 nm wavelength, and then irradiating with light having 10-70 nm wavelength longer maximal peak wavelength than the light used in the previous irradiation.
摘要翻译：本发明提供致密的硅膜及其制造方法。该方法包括在衬底上涂布包含在衬底上具有硅氮烷键的聚合物的涂膜组合物，用160-179nm波长的最大峰的光照射，然后用10 -70nm波长比最初的照射中使用的光更长的最大峰值波长。

4. 发明授权

US5747623A Method and composition for forming ceramics and article coated with the ceramics 失效
标题翻译：用陶瓷形成陶瓷和制品的方法和组成
公开(公告)号：US5747623A
公开(公告)日：1998-05-05
申请号：US543157
申请日：1995-10-13
申请人： Hideki Matsuo , Masahiro Kokubo , Takashi Ohbayashi , Yuji Tashiro , Tadashi Suzuki , Masami Kizaki , Haruo Hashimoto , Yasuo Shimizu , Takaaki Sakurai , Hiroyuki Aoki
发明人： Hideki Matsuo , Masahiro Kokubo , Takashi Ohbayashi , Yuji Tashiro , Tadashi Suzuki , Masami Kizaki , Haruo Hashimoto , Yasuo Shimizu , Takaaki Sakurai , Hiroyuki Aoki
IPC分类号： C03C17/00 , C03C17/22 , C03C17/30 , C04B35/589 , C04B41/45 , C08G77/62 , C23C26/00 , C04B35/58
CPC分类号： C04B41/009 , C03C17/007 , C03C17/225 , C03C17/30 , C04B35/589 , C04B41/4554 , C08G77/62 , C23C26/00 , C03C2217/45 , C03C2217/475 , C03C2217/479
摘要： A method for forming dense ceramics, particularly a ceramic coating by a low temperature treatment is provided. The method for forming ceramics according to the invention is characterized in that a polysilazane having a number-average molecular weight of 100 to 50,000 or a modified polysilazane thereof is subjected to a heat treatment, then exposed to an atmosphere containing water vapor or immersed in distilled water containing a catalyst, or both, or is brought into contact with Pd.sup.2+ ions and water, the polysilazane having a skeleton comprising the unit represented by the following general formula (I): ##STR1## wherein R.sup.1, R.sup.2 and R.sup.3 each independently represents a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, a group other than the above and having a carbon atom directly attached to the silicon atom, an alkylsilyl group, an alkylamino group and an alkoxy group; with the proviso that at least one of R.sub.1, R.sup.2 and R.sup.3 is a hydrogen atom. A method wherein said modified polysilazane is only fired at a temperature of 400.degree. C. or below is also provided.
摘要翻译：提供了通过低温处理形成致密陶瓷，特别是陶瓷涂层的方法。根据本发明的陶瓷形成方法的特征在于将数均分子量为100〜50,000的聚硅氮烷或其改性聚硅氮烷进行热处理，然后暴露于含有水蒸气的气氛或浸渍在蒸馏水中含有催化剂的水或两者，或者与Pd 2+离子和水接触，所述聚硅氮烷具有包含由以下通式（I）表示的单元的骨架：其中R 1，R 2和R 3各自独立地表示氢原子，烷基，烯基，环烷基，芳基，除上述以外的具有直接与硅原子连接的碳原子的基团，烷基甲硅烷基，烷基氨基和烷氧基组; 条件是R 1，R 2和R 3中的至少一个是氢原子。其中所述改性聚硅氮烷仅在400℃或更低的温度下烧制的方法。

5. 发明授权

US08692943B2 Electronic device having a liquid crystal shutter 有权
标题翻译：具有液晶快门的电子设备
公开(公告)号：US08692943B2
公开(公告)日：2014-04-08
申请号：US13524418
申请日：2012-06-15
申请人： Moriyuki Tsuchihashi , Kohji Inoue , Susumu Hattori , Takaaki Sakurai , Yi Zeng
发明人： Moriyuki Tsuchihashi , Kohji Inoue , Susumu Hattori , Takaaki Sakurai , Yi Zeng
IPC分类号： G02F1/133 , G02F1/1343
CPC分类号： G02F1/13318 , G02F1/13338 , G02F2001/13312 , G02F2001/133388 , G06F1/1626 , G06F1/1637
摘要： An electronic device having a liquid crystal shutter is disclosed. A liquid crystal shutter is provided in an area formed by expanding a liquid crystal display. The liquid crystal shutter includes a rear polarizer, a rear glass substrate, a segmented electrode, a liquid crystal, a counter electrode, a front glass substrate, a shutter aperture, and a front polarizer. A camera module is disposed behind the rear polarizer. A voltage applied to the segmented electrode can be controlled to visually expose or hide the lens of the camera module from a shutter aperture.
摘要翻译：公开了一种具有液晶快门的电子设备。在通过使液晶显示器膨胀形成的区域中设置液晶快门。液晶快门包括后偏振器，后玻璃基板，分段电极，液晶，对电极，前玻璃基板，快门孔和前偏振器。相机模块设置在后偏振器后面。可以控制施加到分段电极的电压，以将摄像机模块的透镜从快门孔视觉曝光或隐藏。

6. 发明申请

US20120146113A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120146113A1
公开(公告)日：2012-06-14
申请号：US13397890
申请日：2012-02-16
申请人： JUN SUZUKI , TAKAAKI SAKURAI
发明人： JUN SUZUKI , TAKAAKI SAKURAI
IPC分类号： H01L29/78 , H01L21/285
CPC分类号： H01L21/823857 , C23C16/0236 , C23C16/345 , H01L21/02071 , H01L21/0217 , H01L21/0228 , H01L21/02301 , H01L21/28088 , H01L21/823842 , H01L29/4966 , H01L29/518 , H01L29/6659
摘要： A method for fabricating a semiconductor device, the method comprising: forming a metal containing film on a substrate; exposing the metal containing film to an ammonia radical in a reaction chamber; evacuating gas generated in the exposing by supplying an inert gas into the reaction chamber; and after repeating the exposing and the supplying a predetermined number of times, forming a silicon nitride film covering the metal containing film in the reaction chamber without atmospheric exposure.
摘要翻译：一种制造半导体器件的方法，所述方法包括：在衬底上形成含金属膜; 将含金属膜暴露于反应室内的氨基; 通过向反应室供应惰性气体来抽出暴露中产生的气体; 并且在重复曝光和提供预定次数之后，在没有大气暴露的情况下形成覆盖反应室中的含金属膜的氮化硅膜。

7. 发明授权

US6083860A Method and composition for forming ceramics and article coated with the ceramics 失效
标题翻译：用陶瓷形成陶瓷和制品的方法和组成
公开(公告)号：US6083860A
公开(公告)日：2000-07-04
申请号：US5925
申请日：1998-01-12
申请人： Hideki Matsuo , Masahiro Kokubo , Takashi Ohbayashi , Yuji Tashiro , Tadashi Suzuki , Masami Kizaki , Haruo Hashimoto , Yasuo Shimizu , Takaaki Sakurai , Hiroyuki Aoki
发明人： Hideki Matsuo , Masahiro Kokubo , Takashi Ohbayashi , Yuji Tashiro , Tadashi Suzuki , Masami Kizaki , Haruo Hashimoto , Yasuo Shimizu , Takaaki Sakurai , Hiroyuki Aoki
IPC分类号： C03C17/00 , C03C17/22 , C03C17/30 , C04B35/589 , C04B41/45 , C08G77/62 , C23C26/00 , C04B35/56
CPC分类号： C04B41/009 , C03C17/007 , C03C17/225 , C03C17/30 , C04B35/589 , C04B41/4554 , C08G77/62 , C23C26/00 , C03C2217/45 , C03C2217/475 , C03C2217/479
摘要： A method for forming dense ceramics, particularly a ceramic coating by a low temperature treatment is provided. The method for forming ceramics according to the invention is characterized in that a polysilazane having a number-average molecular weight of 100 to 50,000 or a modified polysilazane thereof is subjected to a heat treatment, then exposed to an atmosphere containing water vapor or immersed in distilled water containing a catalyst, or both, or is brought into contact with Pd.sup.2+ ions and water, the polysilazane having a skeleton comprising the unit represented by the following general formula (I): ##STR1## wherein R.sup.1, R.sup.2 and R.sup.3 each independently represents a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, a group other than the above and having a carbon atom directly attached to the silicon atom, an alkylsilyl group, an alkylamino group and an alkoxy group; with the proviso that at least one of R.sup.1, R.sup.2 and R.sup.3 is a hydrogen atom. A method wherein said modified polysilazane is only fired at a temperature of 400.degree. C. or below is also provided.
摘要翻译：提供了通过低温处理形成致密陶瓷，特别是陶瓷涂层的方法。根据本发明的陶瓷形成方法的特征在于将数均分子量为100〜50,000的聚硅氮烷或其改性聚硅氮烷进行热处理，然后暴露于含有水蒸气的气氛或浸渍在蒸馏水中含有催化剂的水或两者，或者与Pd 2+离子和水接触，所述聚硅氮烷具有包含由以下通式（I）表示的单元的骨架：其中R1，R2和R3各自独立地表示氢原子，烷基，烯基，环烷基，芳基，除上述以外的基团，并且具有与硅原子直接连接的碳原子，烷基甲硅烷基，烷基氨基和烷氧基; 条件是R 1，R 2和R 3中的至少一个是氢原子。其中所述改性聚硅氮烷仅在400℃或更低的温度下烧制的方法。

8. 发明申请

US20060160321A1 Method of forming trench isolation structure 审中-公开
标题翻译：形成沟槽隔离结构的方法
公开(公告)号：US20060160321A1
公开(公告)日：2006-07-20
申请号：US10548222
申请日：2004-03-03
申请人： Masaaki Ichiyama , Teruno Nagura , Tomonori Ishikawa , Takaaki Sakurai , Yasuo Shimizu
发明人： Masaaki Ichiyama , Teruno Nagura , Tomonori Ishikawa , Takaaki Sakurai , Yasuo Shimizu
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： There is provided a method for trench isolation structure formation, which produces neither voids nor cracks within a groove. This method comprises the steps of: forming a groove on a surface of a silicon substrate; coating a polysilazane solution; prebaking the coating at a prebaking temperature regulated so that the temperature is raised in a temperature range of 50° C. to 400° C. over time; curing the coating at a temperature above the maximum prebaking temperature; and polishing and etching the film. The prebaking is carried out while raising the temperature either stepwise in two or more stages or in a monotonically increasing manner.
摘要翻译：提供了一种用于沟槽隔离结构形成的方法，其在凹槽内既不产生空隙也不产生裂纹。该方法包括以下步骤：在硅衬底的表面上形成沟槽; 涂覆聚硅氮烷溶液; 在预烘烤温度下预烘烤涂层，使温度在50℃至400℃的温度范围内随时间升高; 在高于最高预烘温度的温度下固化涂层; 并抛光和蚀刻该膜。在两步或更多阶段或以单调增加的方式逐步升高温度的同时进行预烘烤。

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