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1. 发明授权

US09629610B2 Method of operating ultrasound diagnosis apparatus for providing map of interest index and ultrasound diagnosis apparatus using the method 有权
公开(公告)号：US09629610B2
公开(公告)日：2017-04-25
申请号：US13335106
申请日：2011-12-22
申请人： Kurt Sandstrom , Tae-yun Kim , Yoon-chang Lee
发明人： Kurt Sandstrom , Tae-yun Kim , Yoon-chang Lee
IPC分类号： A61B8/00 , A61N7/00 , A61B8/08 , G01S7/52
CPC分类号： A61B8/485 , A61B8/0891 , A61B8/48 , G01S7/5205 , G01S7/52071
摘要： An ultrasound diagnosis apparatus providing a map of an interest index. The ultrasound diagnosis apparatus includes: a calculating unit for calculating a mechanical index (MI) corresponding to a depth value in a direction in which ultrasound travels from an ultrasound output part of a transmission transducer; a visualization unit for generating an MI map in which a relationship between the calculated MI and the depth value is visualized in the form of a graph; and a display unit for displaying the MI map.

2. 发明授权

US09232931B2 Ultrasound imaging device and method for clutter filtering 有权
标题翻译：超声成像装置及杂波滤波方法
公开(公告)号：US09232931B2
公开(公告)日：2016-01-12
申请号：US13092390
申请日：2011-04-22
申请人： Tae-Yun Kim
发明人： Tae-Yun Kim
IPC分类号： A61B8/06 , G01S15/89
CPC分类号： A61B8/06 , G01S15/8981
摘要： An ultrasound imaging device and method for clutter filtering is provided. The ultrasound imaging device provides logic for calculating signal characteristic values from an in-phase/quadrature-phase (I/Q) of an ultrasound signal reflected from an object and determining to remove a clutter element from the I/Q signal through comparison of the calculated signal characteristic values. Accordingly, the ultrasound imaging device provides a blood flow distribution of the object, more precisely visualized, to a user.
摘要翻译：提供了一种用于杂波滤波的超声波成像装置和方法。超声成像装置提供用于从从物体反射的超声信号的同相/正交相位（I / Q）中计算信号特征值的逻辑，并且通过比较所述I / Q信号来确定从I / Q信号中去除杂波元件计算出的信号特征值。因此，超声波成像装置向用户提供更准确地可视化的对象的血流分布。

3. 发明授权

US08692269B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08692269B2
公开(公告)日：2014-04-08
申请号：US13589974
申请日：2012-08-20
申请人： Tae Yun Kim
发明人： Tae Yun Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/325 , H01L21/0254 , H01L21/0262 , H01L33/12 , H01L33/32
摘要： Disclosed are a light emitting device. A light emitting diode comprises a light emitting device comprises a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on the second N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein the first N-type semiconductor layer comprises a Si doped Nitride layer and the second N-type semiconductor layer comprises a Si doped Nitride layer, and wherein the first and second N-type semiconductor layers have a Si impurity concentration different from each other.
摘要翻译：公开了一种发光器件。发光二极管包括发光器件，其包括在第一N型半导体层上包括第一N型半导体层和第二N型半导体层的多个N型半导体层，在第二N型半导体层上的有源层型半导体层和有源层上的P型半导体层，其中第一N型半导体层包括Si掺杂氮化物层，第二N型半导体层包括Si掺杂氮化物层，并且其中第一并且第二N型半导体层具有彼此不同的Si杂质浓度。

4. 发明授权

US08659046B2 Light emitting device package and method for fabricating the same 有权
标题翻译：发光器件封装及其制造方法
公开(公告)号：US08659046B2
公开(公告)日：2014-02-25
申请号：US12837094
申请日：2010-07-15
申请人： Tae Yun Kim
发明人： Tae Yun Kim
IPC分类号： H01L33/00 , H01L33/48
CPC分类号： H01L33/20 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/486 , H01L2224/48091 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014
摘要： Disclosed are a light emitting device package and a method for fabricating the same. The light emitting device package includes: a trench formed in a substrate; a light emitting structure which is directly grown on a first area of the trench in the substrate; an electrode on the substrate; a wire bonding connecting the electrode with the light emitting structure; anda filler filling the trench.
摘要翻译：公开了一种发光器件封装及其制造方法。发光器件封装包括：形成在衬底中的沟槽; 在衬底中的沟槽的第一区域上直接生长的发光结构; 基板上的电极; 将电极与发光结构连接的引线键合; 和填充沟槽的填料。

5. 发明申请

US20120265068A1 METHOD AND APPARATUS FOR DISPLAYING THERMAL RISK INDICATOR 审中-公开
标题翻译：显示热风险指标的方法和装置
公开(公告)号：US20120265068A1
公开(公告)日：2012-10-18
申请号：US13446814
申请日：2012-04-13
申请人： Kurt SANDSTROM , Dae-young KIM , Tae-yun KIM , You-chun PU , Sung-in CHO
发明人： Kurt SANDSTROM , Dae-young KIM , Tae-yun KIM , You-chun PU , Sung-in CHO
IPC分类号： A61B8/00
CPC分类号： A61B8/461 , A61B8/5223 , A61B8/54
摘要： An apparatus for displaying a thermal risk indicator, which measures at least one analyzing indicator about a risk of a thermal bio-effect by analyzing an ultrasound beam generated from an ultrasound output unit of a transmitting transducer, calculates a thermal risk indicator based on the at least one analyzing indicator, and displays the thermal risk indicator through a display unit.
摘要翻译：一种用于显示热风险指示器的装置，其通过分析从发射换能器的超声波输出单元产生的超声波束来测量关于热生物效应风险的至少一个分析指示器，基于所述热风险指示器至少一个分析指示器，并通过显示单元显示热风险指标。

6. 发明申请

US20120205664A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120205664A1
公开(公告)日：2012-08-16
申请号：US13453804
申请日：2012-04-23
申请人： Tae Yun KIM , Hyo Kun Son
发明人： Tae Yun KIM , Hyo Kun Son
IPC分类号： H01L33/02
CPC分类号： H01L33/06 , H01L21/02584 , H01L33/007 , H01L33/04 , H01L33/08 , H01L33/32 , H01L33/325
摘要： Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: an active layer; a first nitride semiconductor layer on the active layer; a first delta-doped layer on the first nitride semiconductor layer; a second nitride semiconductor layer on the first delta-doped layer; a second delta-doped layer on the second nitride semiconductor layer; a third nitride semiconductor layer on the second delta-doped layer.
摘要翻译：提供一种半导体发光器件及其制造方法。半导体发光器件包括：有源层; 在所述有源层上的第一氮化物半导体层; 在第一氮化物半导体层上的第一δ-掺杂层; 在第一δ掺杂层上的第二氮化物半导体层; 在所述第二氮化物半导体层上的第二δ-掺杂层; 在第二δ-掺杂层上的第三氮化物半导体层。

7. 发明申请

US20110275938A1 ULTRASOUND IMAGING DEVICE AND METHOD FOR CLUTTER FILTERING 审中-公开
标题翻译：超声成像装置及其过滤方法
公开(公告)号：US20110275938A1
公开(公告)日：2011-11-10
申请号：US13092404
申请日：2011-04-22
申请人： Tae-Yun KIM , Kurt Sandstrom
发明人： Tae-Yun KIM , Kurt Sandstrom
IPC分类号： A61B8/00
CPC分类号： A61B8/06 , A61B8/488 , G01S15/8981
摘要： An ultrasound imaging device according to exemplary embodiments of the present invention may determine a skewness with respect to an in-phase/quadrature-phase (I/Q) signal in a frequency domain, and may provide a decision logic of a clutter filtering using the skewness. Accordingly, by filtering a clutter signal of the I/Q signal according to the skewness of the I/Q signal, an ultrasonic image may be formed using a signal in which a clutter component is filtered and/or submatrices in which a Doppler component is dominant, and the formed ultrasonic image may be provided to a user.
摘要翻译：根据本发明的示例性实施例的超声成像装置可以确定相对于频域中的同相/正交相位（I / Q）信号的偏斜度，并且可以使用该方法来提供杂波滤波的判定逻辑偏倚因此，通过根据I / Q信号的偏斜度对I / Q信号的杂波信号进行滤波，可以使用其中对杂波分量进行滤波的信号和/或多普勒分量为优势，并且可以向用户提供形成的超声波图像。

8. 发明授权

US07961021B2 Pulse control device 有权
标题翻译：脉冲控制装置
公开(公告)号：US07961021B2
公开(公告)日：2011-06-14
申请号：US12579705
申请日：2009-10-15
申请人： Kyoung-Nam Kim , Tae-Yun Kim
发明人： Kyoung-Nam Kim , Tae-Yun Kim
IPC分类号： H03K5/04
CPC分类号： G06F1/04 , H03K5/1565 , H03K2005/00091
摘要： A pulse control device is maintained with a constant pulse width corresponding to a change of process or temperature. The pulse control device comprises a fuse set for selectively outputting a delay increase signal and a delay decrease signal that have a different state based on a cutting or non-cutting state of a fuse on which information on a change of process is programmed, and a pulse generator provided with a plurality of delay cells with predetermined time delay for selectively increasing or decreasing the number of the plurality of delay cells depending on the delay increase signal and the delay decrease signal to generate an internal clock with a pulse width corresponding to the number of the increased or decreased delay cells.
摘要翻译：维持脉冲控制装置，其具有对应于过程或温度变化的恒定脉冲宽度。所述脉冲控制装置包括用于选择性地输出延迟增加信号和延迟减小信号的熔丝，所述延迟增加信号和延迟减小信号基于其上编程关于过程改变的信息的熔丝的切割或非切割状态具有不同的状态，以及脉冲发生器，其具有预定的时间延迟的多个延迟单元，用于根据所述延迟增加信号和所述延迟减小信号选择性地增加或减少所述多个延迟单元的数量，以产生具有对应于所述数量的脉冲宽度的内部时钟的延迟细胞增加或减少。

9. 发明申请

US20110137174A1 ULTRASOUND COLOR DOPPLER IMAGING SYSTEM AND METHOD FOR FILTERING CLUTTER SIGNAL OF THE SAME 有权
标题翻译：超声波彩色多普勒成像系统及其相关信号的滤波方法
公开(公告)号：US20110137174A1
公开(公告)日：2011-06-09
申请号：US12959030
申请日：2010-12-02
申请人： Sung Bae PARK , Moo Ho Bae , Tae Yun Kim
发明人： Sung Bae PARK , Moo Ho Bae , Tae Yun Kim
IPC分类号： A61B8/06
CPC分类号： G01S15/8981
摘要： Disclosed is an ultrasound color Doppler image system. The ultrasound color Doppler image system includes a calculation unit that calculates a mean value associated with an I/Q signal corresponding to a pixel of a color image in an ultrasound image and generates a multiplication value using the calculated mean value; a comparison unit that compares the generated multiplication value with the mean value; and a masking unit that performs masking of the pixel based on a comparison result, and, the calculation unit calculates the mean value of the I/Q signal for each frame, selects a reference mean value based on scales of the calculated mean values, and generates the multiplication value by multiplying the selected reference mean value and a scale factor.
摘要翻译：公开了一种超声彩色多普勒图像系统。超声彩色多普勒图像系统包括计算单元，该计算单元计算与超声图像中的彩色图像的像素对应的I / Q信号相关联的平均值，并使用计算出的平均值生成乘法值; 比较单元，其将生成的乘法值与平均值进行比较; 以及屏蔽单元，其基于比较结果执行所述像素的掩蔽，并且所述计算单元计算每帧的I / Q信号的平均值，基于所计算出的平均值的尺度来选择参考平均值，以及通过乘以所选择的参考平均值和比例因子来生成乘法值。

10. 发明申请

US20110101415A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110101415A1
公开(公告)日：2011-05-05
申请号：US13004758
申请日：2011-01-11
申请人： Tae Yun KIM , Hyo Kun Son
发明人： Tae Yun KIM , Hyo Kun Son
IPC分类号： H01L33/32
CPC分类号： H01L33/06 , H01L21/02584 , H01L33/007 , H01L33/04 , H01L33/08 , H01L33/32 , H01L33/325
摘要： Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer.
摘要翻译：提供一种半导体发光器件及其制造方法。半导体发光器件包括：第一导电类型半导体层; 在第一导电类型半导体层上的有源层; 有源层上的未掺杂的半导体层; 在未掺杂半导体层上的第一δ掺杂层; 以及在第一δ掺杂层上的第二导电类型半导体层。

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