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    • 1. 发明授权
    • Apparatus for handling paper sheets and the like
    • 纸张处理装置等
    • US06568673B2
    • 2003-05-27
    • US09912371
    • 2001-07-26
    • Akira MochizukiTadashi SatouYasunari NiiokaRiichi KatouMizuki Kaii
    • Akira MochizukiTadashi SatouYasunari NiiokaRiichi KatouMizuki Kaii
    • B65H3900
    • B65H5/28B65H29/006B65H2301/4191B65H2701/1912
    • An apparatus for handling paper sheets and the like has a mechanism for discharging the paper sheets. The mechanism is provided with a scraper for scraping the paper sheets having wound around a wheel from the wheel. The scraper has a tip end and an opposite end that is rotatably supported in a direction close to or away from the wheel so that the tip end can maintain contact with an outer peripheral surface of the wound paper sheets. The scraper includes a first scraper section and a second scraper section. The first scraper section is rotatably supported in the direction close to or away from the wheel, and is urged toward an outer peripheral surface of the wheel. The second scraper section is rotatably supported on the first scraper section in the direction close to or away from the wheel, and is urged in a direction in which a tip end of the second scraper section rotates toward the outer peripheral surface of the wound paper sheets.
    • 用于处理纸张等的装置具有用于排出纸张的机构。 该机构设置有刮刀,用于刮擦从车轮缠绕在车轮周围的纸张。 刮刀具有尖端和相对的端部,其以接近或远离轮的方向被可旋转地支撑,使得末端可以与卷绕的纸张的外周表面保持接触。 刮刀包括第一刮刀部分和第二刮刀部分。 第一刮刀部分沿着靠近或远离车轮的方向被可旋转地支撑,并被推向车轮的外周表面。 第二刮刀部分沿着靠近或远离轮的方向被可旋转地支撑在第一刮刀部分上,并且沿着第二刮刀部的末端朝向卷绕的纸张的外周面旋转的方向被推动 。
    • 2. 发明申请
    • Optical head and disk drive apparatus
    • 光头和磁盘驱动装置
    • US20080101171A1
    • 2008-05-01
    • US11976393
    • 2007-10-24
    • Tadashi Satou
    • Tadashi Satou
    • G11B7/00
    • G11B7/13925
    • The present invention relates to an optical head for carrying out recording and/or reproduction of data on/from an information record disk. For enhancing the degree of freedom of design and reliably and easily ensuring an installation space for a mechanism made to move an optical element linearly, the optical head includes a holder for holding an optical element, a feed screw for moving the holder linearly and a drive unit for driving the feed screw, and the feed screw is placed to make a predetermined angle with respect to a linearly moving direction of the holder.
    • 本发明涉及一种用于在信息记录盘上进行数据的记录和/或再现的光学头。 为了提高设计自由度并且可靠且容易地确保用于使光学元件线性移动的机构的安装空间,光学头包括用于保持光学元件的保持器,用于使保持器线性移动的进给螺杆和驱动器 用于驱动进给螺杆的单元,并且进给螺杆被放置成相对于保持器的线性移动方向形成预定角度。
    • 6. 发明授权
    • Thin-film transistor and manufacturing method thereof
    • 薄膜晶体管及其制造方法
    • US07618881B2
    • 2009-11-17
    • US11625214
    • 2007-01-19
    • Tadashi Satou
    • Tadashi Satou
    • H01L21/20
    • H01L29/78621H01L29/42384H01L29/4908H01L29/6675H01L29/78648
    • A method for forming a thin-film transistor on an insulating substrate includes the steps of: forming a non-single-crystal semiconductor thin film on the insulating substrate; forming a gate insulating film on the non-single-crystal semiconductor thin film; forming a gate electrode including a lower gate electrode and an upper gate electrode on the gate insulating film, the lower gate electrode having a portion that is not covered by the upper gate electrode; forming a source-drain region and an LDD (lightly doped drain) region in the non-single-crystal thin film semiconductor film concurrently by introducing an impurity into the non-single-crystal semiconductor thin film through the gate electrode and the gate insulating film; and etching away an exposed portion of the lower gate electrode by using the upper gate electrode as a mask.
    • 在绝缘基板上形成薄膜晶体管的方法包括以下步骤:在绝缘基板上形成非单晶半导体薄膜; 在非单晶半导体薄膜上形成栅极绝缘膜; 在所述栅极绝缘膜上形成包括下栅电极和上栅电极的栅电极,所述下栅电极具有未被所述上栅电极覆盖的部分; 通过栅极电极和栅极绝缘膜将杂质引入到非单晶半导体薄膜中,同时在非单晶薄膜半导体薄膜中形成源极 - 漏极区域和LDD(轻掺杂漏极)区域 ; 并通过使用上部栅电极作为掩模蚀刻掉下部栅电极的露出部分。
    • 7. 发明申请
    • THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
    • 薄膜晶体管及其制造方法
    • US20070170526A1
    • 2007-07-26
    • US11625214
    • 2007-01-19
    • Tadashi SATOU
    • Tadashi SATOU
    • H01L29/76H01L21/336
    • H01L29/78621H01L29/42384H01L29/4908H01L29/6675H01L29/78648
    • A method for forming a thin-film transistor on an insulating substrate includes the steps of: forming a non-single-crystal semiconductor thin film on the insulating substrate; forming a gate insulating film on the non-single-crystal semiconductor thin film; forming a gate electrode including a lower gate electrode and an upper gate electrode on the gate insulating film, the lower gate electrode having a portion that is not covered by the upper gate electrode; forming a source-drain region and an LDD (lightly doped drain) region in the non-single-crystal thin film semiconductor film at a time by introducing an impurity into the non-single-crystal semiconductor thin film through the gate electrode and the gate insulating film; and etching away an exposed portion of the lower gate electrode by using the upper gate electrode as a mask.
    • 在绝缘基板上形成薄膜晶体管的方法包括以下步骤:在绝缘基板上形成非单晶半导体薄膜; 在非单晶半导体薄膜上形成栅极绝缘膜; 在所述栅极绝缘膜上形成包括下栅电极和上栅电极的栅电极,所述下栅电极具有未被所述上栅电极覆盖的部分; 在非单晶薄膜半导体膜中,通过栅极电极和栅极将杂质引入非单晶半导体薄膜中,形成源极 - 漏极区域和LDD(轻掺杂漏极)区域 绝缘膜; 并通过使用上部栅电极作为掩模蚀刻掉下部栅电极的露出部分。