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1. 发明授权

US08056503B2 Plasma procesor and plasma processing method 有权
标题翻译：等离子处理和等离子体处理方法
公开(公告)号：US08056503B2
公开(公告)日：2011-11-15
申请号：US10483251
申请日：2002-07-02
申请人： Akihiro Kikuchi , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
发明人： Akihiro Kikuchi , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
IPC分类号： C23C16/50 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32724 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32642 , H01J37/32715 , H01J37/3411 , H01J2237/002 , H01J2237/0206 , H01J2237/334 , H01L21/67069
摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.
摘要翻译：蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展。

2. 发明授权

US08387562B2 Plasma processor and plasma processing method 失效
标题翻译：等离子处理器和等离子体处理方法
公开(公告)号：US08387562B2
公开(公告)日：2013-03-05
申请号：US13242851
申请日：2011-09-23
申请人： Akihiro Kikuchi , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
发明人： Akihiro Kikuchi , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
IPC分类号： C23C16/50 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32724 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32642 , H01J37/32715 , H01J37/3411 , H01J2237/002 , H01J2237/0206 , H01J2237/334 , H01L21/67069
摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.
摘要翻译：蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展。

3. 发明申请

US20050115676A1 Plasma processing method, plasma processing apparatus and computer storage medium 有权
标题翻译：等离子体处理方法，等离子体处理装置和计算机存储介质
公开(公告)号：US20050115676A1
公开(公告)日：2005-06-02
申请号：US10942888
申请日：2004-09-17
申请人： Tadashi Gondai
发明人： Tadashi Gondai
IPC分类号： C23F1/00 , H01J37/32
CPC分类号： H01J37/32082 , H01J37/32706
摘要： A plasma processing method in which plasma can be ignited stably with a low radio frequency power and a low gas pressure even after long time operation by applying a DC voltage of −0.5 kV, for example, from a DC power supply (118) to a lower electrode (104) before a radio frequency power is applied from a radio frequency power supply (114) to the lower electrode (104) through a matching unit 112 when the surface of a wafer W mounted on the lower electrode (104) disposed in a processing container (102) is subjected to a specified plasma processing with plasma of a processing gas formed by applying a radio frequency power to the processing gas introduced into the airtight processing container (102).
摘要翻译：一种等离子体处理方法，即使在例如从直流电源（118）向直流电源（118）施加-0.5kV的直流电压的情况下，即使在长时间运行之后也能够以低的射频功率和低的气体压力稳定地点燃等离子体在安装在设置在下电极（104）上的晶片W的表面的情况下，通过匹配单元112从射频电源（114）向下电极（104）施加射频功率之前的下电极（104）对处理容器（102）进行等离子体处理，其中等离子体处理气体通过对引入气密处理容器（102）的处理气体施加射频功率而形成。

4. 发明申请

US20120006492A1 PLASMA PROCESSOR AND PLASMA PROCESSING METHOD 失效
标题翻译：等离子体处理器和等离子体处理方法
公开(公告)号：US20120006492A1
公开(公告)日：2012-01-12
申请号：US13242851
申请日：2011-09-23
申请人： Akihiro KIKUCHI , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
发明人： Akihiro KIKUCHI , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
IPC分类号： C23F1/08
CPC分类号： H01J37/32724 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32642 , H01J37/32715 , H01J37/3411 , H01J2237/002 , H01J2237/0206 , H01J2237/334 , H01L21/67069
摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.
摘要翻译：蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展。

5. 发明授权

US07569154B2 Plasma processing method, plasma processing apparatus and computer storage medium 有权
标题翻译：等离子体处理方法，等离子体处理装置和计算机存储介质
公开(公告)号：US07569154B2
公开(公告)日：2009-08-04
申请号：US10942888
申请日：2004-09-17
申请人： Tadashi Gondai
发明人： Tadashi Gondai
IPC分类号： C23F1/00
CPC分类号： H01J37/32082 , H01J37/32706
摘要： A plasma processing method in which plasma can be ignited stably with a low radio frequency power and a low gas pressure even after long time operation by applying a DC voltage of −0.5 kV, for example, from a DC power supply (118) to a lower electrode (104) before a radio frequency power is applied from a radio frequency power supply (114) to the lower electrode (104) through a matching unit 112 when the surface of a wafer W mounted on the lower electrode (104) disposed in a processing container (102) is subjected to a specified plasma processing with plasma of a processing gas formed by applying a radio frequency power to the processing gas introduced into the airtight processing container (102).
摘要翻译：一种等离子体处理方法，即使在例如从直流电源（118）向直流电源（118）施加-0.5kV的直流电压的情况下，即使在长时间运行之后也能够以低的射频功率和低的气体压力稳定地点燃等离子体在安装在设置在下电极（104）上的晶片W的表面的情况下，通过匹配单元112从射频电源（114）向下电极（104）施加射频功率之前的下电极（104）对处理容器（102）进行等离子体处理，其中等离子体处理气体通过对引入气密处理容器（102）的处理气体施加射频功率而形成。

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