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1. 发明申请

US20040247302A1 Steam generator and mixer using the same 失效
标题翻译：蒸汽发生器和搅拌机使用相同
公开(公告)号：US20040247302A1
公开(公告)日：2004-12-09
申请号：US10811822
申请日：2004-03-30
申请人： TOSHIBA CERAMICS CO., LTD.
发明人： Eiichi Toya , Tomio Konn
IPC分类号： F22B029/06
CPC分类号： A61M16/109 , A61M11/042 , A61M16/1075
摘要： A steam generating apparatus includes: a liquid tank portion 1 for storing a liquid; an evaporator portion 2 which is directly connected to the liquid tank portion, heats the liquid supplied from the liquid tank portion, and generates steam; a steam storage portion 3 which is directly connected to the evaporator portion, and stores the steam generated by the evaporator portion; a passageway 4 which is directly connected to the steam storage portion and outwardly passes the generated steam; a liquid pathway 10b which is connected to the liquid tank portion, and supplies the liquid; and a heater unit 20 which is provided on one side of the evaporator portion, and heats at least the evaporator portion. The liquid tank portion 1, the evaporator portion 2, the steam storage portion 3, the passageway 4, and the liquid pathway 10b are formed within an integral member of a translucent material.
摘要翻译：蒸汽发生装置包括：用于储存液体的液体罐部分1; 蒸发器部分2直接连接到液罐部分，加热从液罐部分供应的液体，并产生蒸汽; 蒸汽存储部3，其直接连接到蒸发器部分，并且存储由蒸发器部分产生的蒸汽; 通道4，其直接连接到蒸汽存储部分并向外通过产生的蒸汽; 液体通道10b，其连接到液体罐部分，并供应液体; 以及加热器单元20，其设置在蒸发器部分的一侧，并且至少加热蒸发器部分。液体槽部1，蒸发器部2，蒸汽收容部3，通路4以及液体通路10b形成在半透明材料的整体构件内。

2. 发明申请

US20040227200A1 Micro-chemical chip, method of manufacturing the same, and method of molding optical unit 审中-公开
标题翻译：微晶片，其制造方法以及光学单元成型方法
公开(公告)号：US20040227200A1
公开(公告)日：2004-11-18
申请号：US10438320
申请日：2003-05-15
申请人： TOSHIBA KIKAI KABUSHIKI KAISHA , KABUSHIKI KAISHA TOSHIBA , TOSHIBA CERAMICS CO., LTD.
发明人： Satoshi Fukuyama , Hiroshi Murakoshi , Hajime Sudo , Hiroyuki Goto
IPC分类号： H01L027/14 , H01L029/82 , H01L029/84
CPC分类号： B01L3/502715 , B01L3/502707 , B01L2300/0654 , B01L2300/0816 , G01N21/05 , G01N2021/0346 , G01N2021/0389 , G01N2021/058 , G01N2201/0228
摘要： A micro-chemical chip is comprised of a flow passage substrate (110) that includes a substrate (101) of transparent material having a plurality of flow passages (111) in one surface and an optical device (109) built in the other surface as a unit. In a micro-chemical chip manufacturing method according to the present invention, with metal dies 150 and 160 prepared to shape flow passages, wells, and an optical device(s), components such as the optical devices, flow passages, and the like are formed in a single molding process. The present invention is also directed to an optical unit manufacturing method where the atmospheric gas of nitrogen typically employed in the prior art is replaced with any gas of higher heat conductivity such as helium gas to heat and shape material in this alternative atmospheric gas and obtain the molded product.
摘要翻译：一种微型化学芯片由流路基板（110）构成，该流路基板包括在一个表面上具有多个流路（111）的透明材料的基板（101）和以另一面内置的光学元件（109）一个单位在根据本发明的微型化学芯片制造方法中，为了形成流动通道，孔和光学装置而制备的金属模具150和160，诸如光学装置，流动通道等的部件是在一个成型过程中形成。本发明还涉及一种光学单元制造方法，其中在现有技术中通常使用的氮气气氛被替代为具有较高导热性的任何气体（例如氦气），以在该替代气氛气体中加热和形成材料，并获得成型产品。

3. 发明申请

US20040227199A1 Minute flow passage and micro-chemical chip including the same 审中-公开
标题翻译：分流通道和微型化学芯片包括相同
公开(公告)号：US20040227199A1
公开(公告)日：2004-11-18
申请号：US10438271
申请日：2003-05-15
申请人： TOSHIBA KIKAI KABUSHIKI KAISHA , KABUSHIKI KAISHA TOSHIBA , TOSHIBA CERAMICS CO., LTD.
发明人： Satoshi Fukuyama , Hiroshi Murakoshi , Hajime Sudo , Hiroyuki Goto
IPC分类号： H01L027/14
CPC分类号： B29C66/54 , B01L3/502707 , B01L3/502715 , B01L2200/0689 , B01L2200/12 , B01L2300/0816 , B29C65/48 , B29C66/1122 , B29C66/53461 , B29C66/542 , B29L2031/756
摘要： A minute circuit is configured by protruded flow passage walls provided on the surfaces, opposite to each other, of first and second flat members disposed facing each other. This configuration includes a case where the minute circuit has the first flat member including a pair of wall members spaced a width of said minute flow passage from each other and provided in a protruded shape on one surface, and the second flat member fitted so as to abut on at least an apex portion of the wall member, and a case where the minute circuit has the first flat member including a first wall member structuring one side wall of the minute flow passage and formed in a protruded shape, and the second flat member including a second wall member structuring the other side wall of the minute flow passage and formed in a protruded shape, and the surface of the first flat member and the second flat member are disposed facing each other so that a width of the minute flow passage is defined by the first wall member and the second wall member.
摘要翻译：微电路由设置在彼此相对设置的彼此相对的表面上的突出流路壁构成。这种构造包括这样一种情况，其中微电路具有第一平坦部件，该第一扁平部件包括一对隔壁部件，所述壁部件在所述微小流动通道的宽度上彼此间隔开，并且在一个表面上呈突出形状，并且第二平坦部件安装成邻接在所述壁构件的至少顶点部分上，并且所述微电路具有所述第一平坦构件，所述第一平坦构件包括构成所述微小流路的一个侧壁并形成为突出形状的第一壁构件，并且所述第二平坦构件包括构成微小流路的另一侧壁并形成为突出形状的第二壁构件，并且第一平坦构件和第二平坦构件的表面彼此面对地设置，使得微小流路的宽度为由第一壁构件和第二壁构件限定。

4. 发明申请

US20030215643A1 Plasma-resistant articles and production method thereof 失效
标题翻译：等离子体制品及其制造方法
公开(公告)号：US20030215643A1
公开(公告)日：2003-11-20
申请号：US10298529
申请日：2002-11-19
申请人： Toshiba Ceramics Co., Ltd.
发明人： Kenji Morita , Hiroko Ueno , Haruo Murayama
IPC分类号： B32B009/00
CPC分类号： C23C16/4404 , C04B35/486 , C04B35/62655 , C04B2235/3225 , C04B2235/94 , C04B2235/963 , C04B2235/9684 , Y10T428/31
摘要： A plasma-resistant article is provided in which a surface region of the article to be exposed to plasma in a corrosive atmosphere is formed from a zirconia-based ceramic that contains yttria in an amount of 7 to 17 mol %. The plasma-resistant article exhibits a sufficient resistance against exposure to plasma and is cost-effective. Preferably, the surface region has a centerline average roughness (Ra) of 1.2 to 5.0 nullm, which is readily achieved through the use of an etching solution containing hydrofluoric acid. The present invention also provides a production method for such a plasma-resistant article.
摘要翻译：提供一种耐候性制品，其中在腐蚀性气氛中暴露于等离子体的制品的表面区域由含有7至17摩尔％的氧化钇的氧化锆基陶瓷形成。耐等离子体制品具有足够的抗暴露于等离子体的性能并且是成本有效的。优选地，表面区域的中心线平均粗糙度（Ra）为1.2-5.0μm，这通过使用含有氢氟酸的蚀刻溶液容易地实现。本发明还提供了这种耐等离子体制品的制造方法。

5. 发明申请

US20030201587A1 Submerged nozzle for continuous thin-slab casting 审中-公开
标题翻译：浸没式喷嘴用于连续薄板坯铸造
公开(公告)号：US20030201587A1
公开(公告)日：2003-10-30
申请号：US10422975
申请日：2003-04-25
申请人： TOSHIBA CERAMICS CO., LTD.
发明人： Hiroshi Ohtsuka , Etsuhiro Hasebe , Kouji Enomoto
IPC分类号： C21B007/16
CPC分类号： B22D41/50
摘要： A submerged nozzle for continuous thin-slab casting by which a high quality thin-slab strand may be stably supplied for a long time in a continuous manner is provided, as a drift current and surface fluctuation of molten steel in the nozzle and a mold are prevented, and adhesion of ground metal to the nozzle, the damages of the nozzle and the like are suppressed even under long time use. In the submerged nozzle for continuous thin-slab casting, which comprises: a molten steel entrance port at the upper end; a molten steel stream channel with a shape of a tube extending downward from the molten steel entrance port; and a molten steel discharge opening at the lower end and in which the molten steel stream channel includes an upper section with a shape of a circular cylinder, an intermediate section with a transforming shape from a shape of a circular cylinder to a shape of a flat cylinder, and a lower section with a shape of a flat and straight tube, a cross sectional area at the flat and straight tube section in the lower section is configured to be equal to or larger than 95% or equal to or less than 105% of a cross sectional area at the cylindrical section in the upper section of the molten steel stream channel.
摘要翻译：提供了一种用于连续薄板坯铸造的浸没喷嘴，其中可以连续地长时间稳定地供应优质薄板坯坯料，作为喷嘴和模具中的钢水的漂移电流和表面波动即使长时间使用也能够抑制接地金属对喷嘴的粘附，喷嘴等的损伤。在用于连续薄板坯铸造的浸没喷嘴中，其包括：上端的钢水入口; 从钢水入口入口向下延伸的具有管形的钢水流道; 和在下端的钢水排放口，其中钢水流道包括具有圆柱形形状的上部分，具有从圆柱形形状变成扁平形状的变形形状的中间部分圆柱体和具有扁平和直管形状的下部分，下部中的平坦和直管部分处的横截面面积被构造成等于或大于95％或者等于或小于105％在钢水流道的上部的圆筒部的横截面积。

6. 发明申请

US20030089458A1 Wafer processing member 审中-公开
标题翻译：晶圆加工件
公开(公告)号：US20030089458A1
公开(公告)日：2003-05-15
申请号：US10205199
申请日：2002-07-26
申请人： TOSHIBA CERAMICS CO., LTD.
发明人： Hirotaka Hagihara
IPC分类号： C23F001/00 , C23C016/00
CPC分类号： H01L21/68757 , H01L21/67103
摘要： A wafer processing member having: a base material made of a material isotropic in all in-plane directions; and a ceramic film with which the base material is coated; wherein: the base material has a thickness of not larger than 3 mm; difference in coefficient of thermal expansion between the base material and the ceramic film is in a range of from 0.6null10null6 to 1.2null10null6/null C.; and variation in coefficient of thermal expansion of the base material in all in-plane directions is not larger than 0.05null10null6/null C.
摘要翻译：一种晶片处理构件，具有：在所有面内方向上由各向同性的材料制成的基材; 和涂覆有基材的陶瓷膜; 其中：所述基材的厚度不大于3mm; 基材和陶瓷膜之间的热膨胀系数差在0.6×10 -6〜1.2×10 -6 /℃的范围内。并且基材在所有面内方向上的热膨胀系数的变化不大于0.05×10 -6 /℃。

7. 发明申请

US20020190443A1 Immersion nozzle 失效
标题翻译：浸入式喷嘴
公开(公告)号：US20020190443A1
公开(公告)日：2002-12-19
申请号：US10142943
申请日：2002-05-13
申请人： TOSHIBA CERAMICS CO., LTD.
发明人： Hiroshi Ohtsuka , Etuhiro Hasebe , Kouji Enomoto
IPC分类号： B22D041/50
CPC分类号： B22D41/54
摘要： The invention presents an immersion nozzle having corrosion resistance to steel of high oxygen content or type of steel treated with calcium, and capable of preventing adheres and deposits of molten steel and oxide inclusions on the nozzle inner wall, in which at least a part of its portion contacting with molten steel is composed of a refractory material containing 50 wt. % or more of a principal component including one or more types of magnesia, alumina, spinel, zirconia, mullite, and silica, and also 0.3 to 15 wt. % of boron nitride, and an organic binder.
摘要翻译：本发明提供了一种具有对氧含量高的钢或具有钙处理的钢的耐蚀性的浸渍喷嘴，并且能够防止钢水和氧化物夹杂物在喷嘴内壁上的粘附和沉积，其中至少部分与钢水接触的部分由含有50重量％包括一种或多种类型的氧化镁，氧化铝，尖晶石，氧化锆，莫来石和二氧化硅的主要成分的％以上，以及0.3〜15重量％％的氮化硼和有机粘合剂。

8. 发明申请

US20020162835A1 Heater 有权
标题翻译：加热器
公开(公告)号：US20020162835A1
公开(公告)日：2002-11-07
申请号：US10170539
申请日：2002-06-14
申请人： TOSHIBA CERAMICS CO., LTD
发明人： Eiichi Toya , Tomio Konn , Tomohiro Nagata , Norihiko Saito , Shigeru Yamamura , Ken Nakao , Takanori Saito , Hisaei Osanai , Toshiyuki Makiya
IPC分类号： H05B003/10
CPC分类号： H05B3/0047 , H01L2924/0002 , H01L2924/00
摘要： A rod-shaped heater provided is composed of a carbon wire heating element 2 sealed in a small or large diameter quartz glass tube, a small diameter quartz glass tube portions 3a and 3b charged with compressed wire carbon members at opposite ends thereof; a sealed terminal section 10 having connection lines 11a and 11b for power supply held between the compressed wire carbon members charged in the small diameter quartz glass tube. The connection lines and the carbon wire heating element are electrically connected by way of the wire carbon members. This rod-shaped heater using the carbon wire heating element is suitable for readily raising the temperature of the agent in the storage tank of the wet etching agent or the grinding agent.
摘要翻译：所提供的棒状加热器由密封在小直径或大直径的石英玻璃管中的碳线加热元件2，在其相对端装有压缩线碳材料的小直径石英玻璃管部分3a和3b组成; 密封的端子部分10具有用于电源的连接线11a和11b，保持在被填充在小直径石英玻璃管中的压缩线碳体之间。连接线和碳线加热元件通过导线碳元件电连接。使用碳丝加热元件的棒状加热器适用于容易地提高湿式蚀刻剂或研磨剂的储罐中的试剂的温度。

9. 发明申请

US20010052316A1 Apparatus for reduced-pressure epitaxial growth and method of controlling the apparatus 有权
标题翻译：减压外延生长装置及其控制方法
公开(公告)号：US20010052316A1
公开(公告)日：2001-12-20
申请号：US09855654
申请日：2001-05-16
申请人： TOSHIBA CERAMICS CO., LTD
发明人： Katsuyuki Iwata , Tadashi Ohashi , Shuji Tobashi , Shinichi Mitani , Hideki Arai , Hideki Ito
IPC分类号： C30B025/00 , C30B023/00 , C30B028/12 , C30B028/14
CPC分类号： C23C16/45521 , C23C16/45557 , C23C16/4584 , C23C16/52 , C30B25/12 , C30B25/14
摘要： An apparatus for reduced-pressure gaseous phase epitaxial growth by suppressing contamination upon the machine parts constituting the rotary mechanical portion and suppressing contamination upon the semiconductor wafer by maintaining the pressure in the rotary mechanical portion to lie within a particular range, and a method of controlling the above apparatus. The apparatus comprises a purging gas introduction pipe 6 for purging the interior of the rotary mechanical portion, a purging gas exhaust pipe 7 for exhausting the gas introduced through the purging gas introduction pipe, a pressure adjusting valve 41 provided in the purging gas exhaust pipe, a pressure gauge 21 for detecting the pressure in the rotary mechanical portion, and an arithmetic/control unit 31 for executing an arithmetic operation based upon the detected pressure and for controlling the opening degree of the pressure adjusting valve 41 provided in the purging gas exhaust pipe, so that the pressure in the rotary mechanical portion assumes a proper value.
摘要翻译：一种通过抑制构成旋转机械部分的机器部件上的污染并通过将旋转机械部分中的压力维持在特定范围内来抑制半导体晶片上的污染物的减压气相外延生长装置，以及控制方法上述装置。该装置包括用于清洗旋转机械部分内部的净化气体引入管6，用于排出通过吹扫气体导入管引入的气体的净化气体排出管7，设置在净化气体排出管中的压力调节阀41，用于检测旋转机械部分中的压力的压力计21以及用于基于检测到的压力执行算术运算并且用于控制设置在净化气体排出管中的压力调节阀41的开度的运算/控制单元31 ，使得旋转机械部分中的压力呈现适当的值。

10. 发明申请

US20030184696A1 Reflection plate for semiconductor heat treatment and manufacturing method thereof 失效
标题翻译：半导体热处理用反射板及其制造方法
公开(公告)号：US20030184696A1
公开(公告)日：2003-10-02
申请号：US10391583
申请日：2003-03-20
申请人： TOSHIBA CERAMICS CO., LTD. , TOKYO ELECTRON LIMITED
发明人： Kazuhiko Shimanuki , Hiroyuki Honma , Norihiko Saito , Hideyuki Yokoyama , Takanori Saito , Ken Nakao
IPC分类号： G02F001/1335
CPC分类号： H01L21/67115 , H01L21/68757
摘要： It is provided that a reflection plate of semiconductor heat treatment, which is resistant to cracks or deformations by controlling the adsorption of foreign materials and the production of reaction. Said reflection plate 1 for semiconductor heat treatment is composed of a disk-shaped or ring-shaped plate of optically transmissible material and a plate 2 of inorganic material hermetically enclosed in said disk-shaped or ring-shaped plate, in which said plate of inorganic material has at least one side in contact with said plate of optically transmissible material, said at least one side 2a having a surface roughness of Ra 0.1 to 10.0 nullm, said at least one side 2a formed grooves 2c therein.
摘要翻译：提供了半导体热处理反射板，其通过控制异物的吸附和反应的产生而耐裂纹或变形。用于半导体热处理的所述反射板1由光学可透射材料的盘形或环形板和密封在所述盘形或环形板上的无机材料板2组成，其中所述无机材料具有至少一个与光学可透射材料的所述板接触的一面，所述至少一个侧面2a的表面粗糙度Ra为0.1至10.0μm，所述至少一个侧面2a在其中形成凹槽2c。

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