会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明申请
    • CHARGED-PARTICLE BEAM WRITING METHOD
    • 充电粒子束写法
    • US20090014663A1
    • 2009-01-15
    • US12170874
    • 2008-07-10
    • Rieko NISHIMURATakashi KAMIKUBO
    • Rieko NISHIMURATakashi KAMIKUBO
    • H01J3/26
    • H01J37/3045B82Y10/00B82Y40/00H01J37/3174H01J2237/2817H01J2237/30455H01J2237/30461H01J2237/30483
    • The present invention provides an electron beam writing method capable of suppressing a variation in position to be irradiated with an electron beam due to its drift and writing a predetermined pattern.A positional displacement amount near the center of each main deflection area of the charged-particle beam is determined. Correction values are determined from a plurality of the positional displacement amounts. A position irradiated with the charged-particle beam is corrected from the correction values. The neighborhood of the center of the main deflection area can be a sub deflection area including the center of the main deflection area. In this case, the positional displacement amount can be one for one arbitrary point in the sub deflection area. Alternatively, the Positional displacement amount can also be the average of positional displacement amounts at a plurality of arbitrary points in the sub deflection area.
    • 本发明提供一种电子束写入方法,其能够抑制由于其漂移并写入预定图案而被电子束照射的位置的变化。 确定带电粒子束的每个主偏转区域的中心附近的位置偏移量。 从多个位置偏移量确定校正值。 从校正值校正用带电粒子束照射的位置。 主偏转区域的中心附近可以是包括主偏转区域的中心的副偏转区域。 在这种情况下,位移位移量可以是副偏转区域中的一个任意点的位移量。 或者,位移位移量也可以是副偏转区域中的多个任意点处的位置偏移量的平均值。