专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110174799A1 MICRO-HOTPLATES 有权
公开(公告)号：US20110174799A1
公开(公告)日：2011-07-21
申请号：US12691104
申请日：2010-01-21
申请人： Syed Zeeshan ALI , Florin Udrea , Julian William Gardner
发明人： Syed Zeeshan ALI , Florin Udrea , Julian William Gardner
IPC分类号： H05B3/68 , H01L21/3065 , H01L21/306
CPC分类号： H05B3/267 , Y10T29/49083
摘要： A micro-hotplate is provided in the form of a device comprising a sensor and one or more resistive heaters within the micro-hotplate arranged to heat the sensor. Furthermore a controller is provided for applying a bidirectional drive current to at least one of the heaters to reduce electromigration. The controller also serves to drive the heater at a substantially constant temperature. Such an arrangement is advantageous over an arrangement in which a unidirectional DC drive current is applied to the heater. This is because the unidirectional drive current causes electromigration which results in an increase in resistance over time. This is undesirable because it can lead to failure of the micro-hotplate. In contrast, the application of the bidirectional current reduces electromigration and as a result there is insignificant change in the resistance of the heater over time and under high temperature. This in turn improves the reliability of the micro-hotplate and therefore helps to improve the lifetime of the sensor
摘要翻译：提供微电子装置的形式包括传感器和微电热板内的一个或多个电阻加热器，其布置成加热传感器。此外，提供了一种控制器，用于向至少一个加热器施加双向驱动电流以减少电迁移。控制器还用于以基本恒定的温度驱动加热器。这种布置对于将单向DC驱动电流施加到加热器的布置是有利的。这是因为单向驱动电流导致电迁移，导致电阻随时间的增加。这是不希望的，因为它可能导致微电热板的故障。相比之下，双向电流的应用减少了电迁移，结果是随着时间的推移和高温下电阻的电阻变化不大。这又提高了微型电热板的可靠性，因此有助于提高传感器的使用寿命

2. 发明授权

US08859303B2 IR emitter and NDIR sensor 有权
标题翻译：红外发射器和NDIR传感器
公开(公告)号：US08859303B2
公开(公告)日：2014-10-14
申请号：US13466626
申请日：2012-05-08
申请人： Florin Udrea , Julian Gardner , Syed Zeeshan Ali , Mohamed Foysol Chowdhury , Ilie Poenaru
发明人： Florin Udrea , Julian Gardner , Syed Zeeshan Ali , Mohamed Foysol Chowdhury , Ilie Poenaru
IPC分类号： H01L21/00 , H05B3/26
CPC分类号： H05B3/267 , G01J3/108 , H05B2203/032
摘要： An IR source in the form of a micro-hotplate device including a CMOS metal layer made of at least one layer of embedded on a dielectric membrane supported by a silicon substrate. The device is formed in a CMOS process followed by a back etching step. The IR source also can be in the form of an array of small membranes —closely packed as a result of the use of the deep reactive ion etching technique and having better mechanical stability due to the small size of each membrane while maintaining the same total IR emission level. SOI technology can be used to allow high ambient temperature and allow the integration of a temperature sensor, preferably in the form of a diode or a bipolar transistor right below the IR source.
摘要翻译：微电子装置形式的IR源，其包括由至少一层嵌入在由硅衬底支撑的电介质膜上的CMOS金属层。该器件以CMOS工艺形成，随后是背蚀刻步骤。红外光源还可以是小型膜阵列的形式，由于使用了深反应离子蚀刻技术而被密封包装，并且由于每个膜的小尺寸而具有更好的机械稳定性，同时保持相同的总IR 排放水平。可以使用SOI技术来允许高环境温度并且允许温度传感器的集成，优选地在IR源的正下方的二极管或双极晶体管的形式。

3. 发明授权

US08552380B1 IR detector 有权
标题翻译：红外探测器
公开(公告)号：US08552380B1
公开(公告)日：2013-10-08
申请号：US13466662
申请日：2012-05-08
申请人： Udrea Florin , Julian Gardner , Syed Zeeshan Ali , Mohamed Foysol Chowdhury , Ilie Poenaru
发明人： Udrea Florin , Julian Gardner , Syed Zeeshan Ali , Mohamed Foysol Chowdhury , Ilie Poenaru
IPC分类号： G01J5/20
CPC分类号： G01J5/12
摘要： An IR detector in the form of a thermopile including one or more thermocouples on a dielectric membrane supported by a silicon substrate. Each thermocouple is composed of two materials, at least one of which is p-doped or n-doped single crystal silicon. The device is formed in an SOI process. The device is advantageous as the use of single crystal silicon reduces the noise in the output signal, allows higher reproducibility of the geometrical and physical properties of the layer and in addition, the use of an SOI process allows a temperature sensor, as well as circuitry to be fabricated on the same chip. The detector can also have an IR filter wafer bonded onto it and/or have arrays of thermopiles to increase the sensitivity. The devices can also be integrated with an IR source on the same silicon chip and packaged to form a complete and miniaturised NDIR sensor.
摘要翻译：热电堆形式的IR检测器，其包括在由硅衬底支撑的电介质膜上的一个或多个热电偶。每个热电偶由两种材料组成，其中至少一种是p掺杂或n掺杂的单晶硅。该器件以SOI工艺形成。该器件是有利的，因为单晶硅的使用降低了输出信号中的噪声，允许层的几何和物理性质的更高的再现性，此外，使用SOI工艺允许温度传感器以及电路在同一芯片上制造。检测器还可以具有结合到其上的IR滤光片和/或具有热电堆阵列以增加灵敏度。这些器件还可以与同一硅芯片上的IR源集成，并封装成一个完整和小型化的NDIR传感器。

4. 发明授权

US08410560B2 Electromigration reduction in micro-hotplates 有权
标题翻译：微电镀减少电镀
公开(公告)号：US08410560B2
公开(公告)日：2013-04-02
申请号：US12691104
申请日：2010-01-21
申请人： Syed Zeeshan Ali , Florin Udrea , Julian William Gardner
发明人： Syed Zeeshan Ali , Florin Udrea , Julian William Gardner
IPC分类号： H01L27/14 , H01L21/00
CPC分类号： H05B3/267 , Y10T29/49083
摘要： A micro-hotplate is provided in the form of a device comprising a sensor and one or more resistive heaters within the micro-hotplate arranged to heat the sensor. Furthermore a controller is provided for applying a bidirectional drive current to at least one of the heaters to reduce electromigration. The controller also serves to drive the heater at a substantially constant temperature.
摘要翻译：提供微电子装置的形式包括传感器和微电热板内的一个或多个电阻加热器，其布置成加热传感器。此外，提供了一种控制器，用于向至少一个加热器施加双向驱动电流以减少电迁移。控制器还用于以基本恒定的温度驱动加热器。

5. 发明申请

US20120267532A1 IR EMITTER AND NDIR SENSOR 有权
标题翻译：红外发射器和NDIR传感器
公开(公告)号：US20120267532A1
公开(公告)日：2012-10-25
申请号：US13466626
申请日：2012-05-08
申请人： Florin UDREA , Julian GARDNER , Syed Zeeshan ALI , Mohamed Foysol CHOWDHURY , Ilie POENARU
发明人： Florin UDREA , Julian GARDNER , Syed Zeeshan ALI , Mohamed Foysol CHOWDHURY , Ilie POENARU
IPC分类号： G01N21/61 , G21K5/02 , H01L21/02 , B82Y15/00
CPC分类号： H05B3/267 , G01J3/108 , H05B2203/032
摘要： An IR source in the form of a micro-hotplate device including a CMOS metal layer made of at least one layer of embedded on a dielectric membrane supported by a silicon substrate. The device is formed in a CMOS process followed by a back etching step. The IR source also can be in the form of an array of small membranes—closely packed as a result of the use of the deep reactive ion etching technique and having better mechanical stability due to the small size of each membrane while maintaining the same total IR emission level. SOI technology can be used to allow high ambient temperature and allow the integration of a temperature sensor, preferably in the form of a diode or a bipolar transistor right below the IR source.
摘要翻译：微电子装置形式的IR源，其包括由至少一层嵌入在由硅衬底支撑的电介质膜上的CMOS金属层。该器件以CMOS工艺形成，随后是背蚀刻步骤。 IR源也可以是由于使用深反应离子蚀刻技术而紧密堆积的小膜阵列的形式，并且由于每个膜的小尺寸而具有更好的机械稳定性，同时保持相同的总IR 排放水平。可以使用SOI技术来允许高环境温度并且允许温度传感器的集成，优选地在IR源的正下方的二极管或双极晶体管的形式。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式