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    • 2. 发明授权
    • Charged particle beam drawing method and apparatus
    • 带电粒子束的绘制方法和装置
    • US08188449B2
    • 2012-05-29
    • US12816773
    • 2010-06-16
    • Hayato ShibataHitoshi HigurashiAkihito AnpoJun YashimaShigehiro HaraSusumu Oogi
    • Hayato ShibataHitoshi HigurashiAkihito AnpoJun YashimaShigehiro HaraSusumu Oogi
    • G21K5/10G06F19/00
    • H01J37/3026B82Y10/00B82Y40/00H01J37/3174
    • A charged particle beam drawing apparatus for drawing patterns corresponding to figures in a drawing data, has a portion for dividing a drawing area on the workpiece into block frames, a portion for combining at least a first block frame and a second block frame into a virtual block frame, and a portion for transferring a data of the virtual block frame from an input data dividing module to a common memory of a first converter and a second converter. The first converter converts a data of a first figure included in the first block frame into a first drawing apparatus internal format data. The second converter converts a data of a second figure included in the second block frame into a second drawing apparatus internal format data. The first figure and the second figure are included in a cell extending over the first block frame and the second block frame.
    • 用于绘制与绘图数据中的图形对应的图案的带电粒子束描绘装置具有用于将工件上的绘图区域划分成块框架的部分,用于将至少第一块框架和第二块框架组合成虚拟的部分 以及用于将虚拟块帧的数据从输入数据划分模块传送到第一转换器和第二转换器的公共存储器的部分。 第一转换器将包括在第一块帧中的第一图形的数据转换成第一绘图装置内部格式数据。 第二转换器将包括在第二块帧中的第二图形的数据转换为第二绘图装置内部格式数据。 第一图和第二图被包括在延伸超过第一块帧和第二块帧的单元中。
    • 3. 发明申请
    • CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND CHARGED PARTICLE BEAM LITHOGRAPHY METHOD
    • 充电颗粒光束光刻装置和充电颗粒光束光刻方法
    • US20090057575A1
    • 2009-03-05
    • US12204382
    • 2008-09-04
    • Susumu OOGIHitoshi HIGURASHIAkihito ANPOToshiro YAMAMOTO
    • Susumu OOGIHitoshi HIGURASHIAkihito ANPOToshiro YAMAMOTO
    • G21K5/00
    • H01J37/3174B82Y10/00B82Y40/00H01J37/3026
    • A charged particle beam lithography apparatus includes a first block area divider configured to divide a pattern forming area into a plurality of first block areas in order to make a number of shots when forming a pattern substantially equal; an area density calculator configured to calculate, using a plurality of small areas obtained by virtually dividing the pattern forming area into mesh areas of a predetermined size smaller than all of the first block areas, a pattern area density of each small area positioned therein for each of the first block areas; a second block area divider configured to re-divide the pattern forming area divided into the plurality of first block areas into a plurality of second block areas of a uniform size, which is larger than the small area; a corrected dose calculator configured to calculate, using the pattern area density of each small area, a proximity effect-corrected dose in each corresponding small area positioned inside the second block area for each of the second block areas; a beam dose calculator configured to calculate, using the proximity effect-corrected dose of each small area, a beam dose of a charged particle beam in each corresponding small area; and a pattern generator configured to form a predetermined pattern on a target object by irradiating a charged particle beam of the beam dose calculated for each of the small areas.
    • 带电粒子束光刻设备包括第一块区域分配器,其被配置为将图案形成区域划分成多个第一块区域,以便在形成基本相等的图案时进行多次拍摄; 区域密度计算器,被配置为使用通过将图案形成区域实际上划分为比所有第一块区域小的预定尺寸的网格区域而获得的多个小区域,计算每个小区域的每个小区域的图案区域密度 的第一块区域; 第二块区域分配器,被配置为将划分为多个第一块区域的图案形成区域重新划分为大于所述小区域的均匀尺寸的多个第二块区域; 校正剂量计算器,被配置为使用每个小区域的图案区域密度来计算每个所述第二块区域中位于所述第二块区域内的每个对应小区域中的邻近效应校正剂量; 光束剂量计算器,被配置为使用每个小区域的邻近效应校正剂量来计算每个对应的小区域中的带电粒子束的束剂量; 以及图案生成器,被配置为通过照射针对每个小区域计算的光束剂量的带电粒子束来在目标物体上形成预定图案。
    • 4. 发明授权
    • Charged beam lithography system
    • 带电光束光刻系统
    • US06313476B1
    • 2001-11-06
    • US09459648
    • 1999-12-13
    • Mitsuko ShimizuTakayuki AbeHirohito AnzeSusumu OogiTakashi KamikuboEiji MurakamiYoshiaki HattoriTomohiro IijimaHitoshi HigurashiKazuto Matsuki
    • Mitsuko ShimizuTakayuki AbeHirohito AnzeSusumu OogiTakashi KamikuboEiji MurakamiYoshiaki HattoriTomohiro IijimaHitoshi HigurashiKazuto Matsuki
    • A61N500
    • H01J37/3174B82Y10/00B82Y40/00H01J37/3026H01J2237/31769
    • A charged beam lithography system includes a charged particle gun for generating charged beams, a main deflecting system and a sub-deflecting system for deflecting the charged beams generated by the charged particle gun, and a control computer. The charged beam lithography system is designed to cause the surface of a substrate to be irradiated with the charged beams from the charged particle gun while continuously moving a stage, to write a desired pattern for each of stripes defined by the maximum deflection widths of the main deflecting system and the sub-deflecting system. The charged beam lithography system further comprises: a real time proximity effect correcting circuit for calculating an optimum dosage for each of the stripes by correcting the dosage of the electron beams in view of the influence of the proximity effect; and a cash memory for storing the optimum dosage data for at least two of the stripes. Thus, the charged beam lithography system is designed to shift a divided form of the whole written region using the stripes at each wiring number of times, by a predetermined distance from a predetermined reference position in a direction perpendicular to a stage continuous moving direction, while selectively extracting the optimum dosage data from the cash memory so as to correspond to each of written stripes at each writing number of times, to write patterns. During the writing operation, the optimum dosage data corresponding to the next region to be written are transferred from the real time proximity effect correcting circuit to the cash memory, and the real time proximity effect correcting circuit calculates optimum dosages for the stripes corresponding to regions to be written after next and thereafter.
    • 带电束光刻系统包括用于产生带电束的带电粒子枪,用于偏转由带电粒子枪产生的带电束的主偏转系统和副偏转系统以及控制计算机。 带电光束光刻系统被设计成在连续移动平台的同时使来自带电粒子枪的带电束照射衬底的表面,以便为由主体的最大偏转宽度限定的条纹写入期望的图案 偏转系统和副偏转系统。 带电光束光刻系统还包括:实时邻近效应校正电路,用于通过根据邻近效应的影响校正电子束的剂量来计算每个条纹的最佳剂量; 以及用于存储至少两个条纹的最佳剂量数据的现金存储器。 因此,带电光束光刻系统被设计成使用每个布线次数的条纹将整个写入区域的分割形式沿垂直于平台连续移动方向的预定基准位置移动预定距离,同时 从现金存储器中选择性地提取最佳剂量数据,以便在每次写入次数时对应于每个写入条带,以写入模式。 在写入操作期间,对应于要写入的下一区域的最佳剂量数据从实时邻近效应校正电路传送到现金存储器,并且实时邻近效应校正电路针对与区域对应的条纹计算最佳剂量 写在下一个和之后。
    • 5. 发明授权
    • Charged particle beam lithography apparatus and charged particle beam lithography method
    • 带电粒子束光刻设备和带电粒子束光刻法
    • US07750324B2
    • 2010-07-06
    • US12204382
    • 2008-09-04
    • Susumu OogiHitoshi HigurashiAkihito AnpoToshiro Yamamoto
    • Susumu OogiHitoshi HigurashiAkihito AnpoToshiro Yamamoto
    • G21K5/10G21K5/00H01J37/08
    • H01J37/3174B82Y10/00B82Y40/00H01J37/3026
    • A charged particle beam lithography apparatus includes a first block area divider configured to divide a pattern forming area into a plurality of first block areas in order to make a number of shots when forming a pattern substantially equal; an area density calculator configured to calculate, using a plurality of small areas obtained by virtually dividing the pattern forming area into mesh areas of a predetermined size smaller than all of the first block areas, a pattern area density of each small area positioned therein for each of the first block areas; a second block area divider configured to re-divide the pattern forming area divided into the plurality of first block areas into a plurality of second block areas of a uniform size, which is larger than the small area; a corrected dose calculator configured to calculate, using the pattern area density of each small area, a proximity effect-corrected dose in each corresponding small area positioned inside the second block area for each of the second block areas; a beam dose calculator configured to calculate, using the proximity effect-corrected dose of each small area, a beam dose of a charged particle beam in each corresponding small area; and a pattern generator configured to form a predetermined pattern on a target object by irradiating a charged particle beam of the beam dose calculated for each of the small areas.
    • 带电粒子束光刻设备包括第一块区域分配器,其被配置为将图案形成区域划分成多个第一块区域,以便在形成基本相等的图案时进行多次拍摄; 区域密度计算器,被配置为使用通过将图案形成区域实际上划分为比所有第一块区域小的预定尺寸的网格区域而获得的多个小区域,计算每个小区域的每个小区域的图案区域密度 的第一块区域; 第二块区域分配器,被配置为将划分为多个第一块区域的图案形成区域重新划分为大于所述小区域的均匀尺寸的多个第二块区域; 校正剂量计算器,被配置为使用每个小区域的图案区域密度来计算每个所述第二块区域中位于所述第二块区域内的每个对应小区域中的邻近效应校正剂量; 光束剂量计算器,被配置为使用每个小区域的邻近效应校正剂量来计算每个对应的小区域中的带电粒子束的束剂量; 以及图案生成器,被配置为通过照射针对每个小区域计算的光束剂量的带电粒子束来在目标物体上形成预定图案。
    • 6. 发明授权
    • Charged particle beam writing method for determining optimal exposure
dose prior to pattern drawing
    • 带电粒子束写入方法,用于在图形绘制之前确定最佳曝光剂量
    • US5863682A
    • 1999-01-26
    • US804260
    • 1997-02-21
    • Takayuki AbeSusumu OogiTakashi KamikuboHirohito Anze
    • Takayuki AbeSusumu OogiTakashi KamikuboHirohito Anze
    • G03F7/20H01J37/304H01J37/317H01L21/027G03F9/00G03C5/00
    • B82Y10/00B82Y40/00G03F7/2059H01J37/304H01J37/3174H01J2237/30461Y10S430/143
    • A charged particle beam writing method for determining an optimal exposure dose for each position in a pattern to be drawn on a target before actually drawing the pattern by irradiating the target with charged particles and drawing the pattern with the obtained optimal exposure doses, comprising the first step of determining the first approximate optimal exposure dose for each position on said target, the second step of determining the second optimal exposure dose for each position on said target by determining a corrective value di for correcting said first approximate optimal exposure dose obtained by multiplying the error in the exposure dose of the position produced when exposed to said first approximate optimal exposure dose by a regulation coefficient of a value substantially equal to the exposure dose U(x, y) to back scattering charged particles and adding said corrective value to said first approximate optimal exposure dose, said exposure dose being variable as a function of the location (x, y) of the position, the third step of repeating one of (1) the second step for a predetermined number of times, (2) the second step until each of said second approximate optimal exposure doses tends to converge, and (3) the second step until all the errors in said second approximate optimal exposure doses are found within a predetermined value.
    • 一种带电粒子束写入方法,用于通过用带电粒子照射目标物并用获得的最佳曝光剂量绘制图案,在实际绘制图案之前,确定要绘制在目标上的图案中的每个位置的最佳曝光剂量,包括第一 确定所述目标上每个位置的第一近似最佳曝光剂量的步骤,通过确定用于校正所述第一近似最佳曝光剂量的校正​​值di来确定所述目标上每个位置的第二最佳曝光剂量的第二步骤, 当暴露于所述第一近似最佳曝光剂量时所产生的位置的曝​​光剂量的误差大体上等于曝光剂量U(x,y)的反向散射带电粒子的调节系数,并将所述校正值加到所述第一 近似最佳暴露剂量,所述暴露剂量随th的变化而变化 位置的位置(x,y),重复(1)第二步骤之一预定次数的第三步骤,(2)第二步骤,直到所述第二近似最佳曝光剂量中的每一个倾向于收敛, 和(3)第二步,直到发现所述第二近似最佳曝光剂量的所有误差在预定值内。