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1. 发明授权

US06313476B1 Charged beam lithography system 有权
标题翻译：带电光束光刻系统
公开(公告)号：US06313476B1
公开(公告)日：2001-11-06
申请号：US09459648
申请日：1999-12-13
申请人： Mitsuko Shimizu , Takayuki Abe , Hirohito Anze , Susumu Oogi , Takashi Kamikubo , Eiji Murakami , Yoshiaki Hattori , Tomohiro Iijima , Hitoshi Higurashi , Kazuto Matsuki
发明人： Mitsuko Shimizu , Takayuki Abe , Hirohito Anze , Susumu Oogi , Takashi Kamikubo , Eiji Murakami , Yoshiaki Hattori , Tomohiro Iijima , Hitoshi Higurashi , Kazuto Matsuki
IPC分类号： A61N500
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J2237/31769
摘要： A charged beam lithography system includes a charged particle gun for generating charged beams, a main deflecting system and a sub-deflecting system for deflecting the charged beams generated by the charged particle gun, and a control computer. The charged beam lithography system is designed to cause the surface of a substrate to be irradiated with the charged beams from the charged particle gun while continuously moving a stage, to write a desired pattern for each of stripes defined by the maximum deflection widths of the main deflecting system and the sub-deflecting system. The charged beam lithography system further comprises: a real time proximity effect correcting circuit for calculating an optimum dosage for each of the stripes by correcting the dosage of the electron beams in view of the influence of the proximity effect; and a cash memory for storing the optimum dosage data for at least two of the stripes. Thus, the charged beam lithography system is designed to shift a divided form of the whole written region using the stripes at each wiring number of times, by a predetermined distance from a predetermined reference position in a direction perpendicular to a stage continuous moving direction, while selectively extracting the optimum dosage data from the cash memory so as to correspond to each of written stripes at each writing number of times, to write patterns. During the writing operation, the optimum dosage data corresponding to the next region to be written are transferred from the real time proximity effect correcting circuit to the cash memory, and the real time proximity effect correcting circuit calculates optimum dosages for the stripes corresponding to regions to be written after next and thereafter.
摘要翻译：带电束光刻系统包括用于产生带电束的带电粒子枪，用于偏转由带电粒子枪产生的带电束的主偏转系统和副偏转系统以及控制计算机。带电光束光刻系统被设计成在连续移动平台的同时使来自带电粒子枪的带电束照射衬底的表面，以便为由主体的最大偏转宽度限定的条纹写入期望的图案偏转系统和副偏转系统。带电光束光刻系统还包括：实时邻近效应校正电路，用于通过根据邻近效应的影响校正电子束的剂量来计算每个条纹的最佳剂量; 以及用于存储至少两个条纹的最佳剂量数据的现金存储器。因此，带电光束光刻系统被设计成使用每个布线次数的条纹将整个写入区域的分割形式沿垂直于平台连续移动方向的预定基准位置移动预定距离，同时从现金存储器中选择性地提取最佳剂量数据，以便在每次写入次数时对应于每个写入条带，以写入模式。在写入操作期间，对应于要写入的下一区域的最佳剂量数据从实时邻近效应校正电路传送到现金存储器，并且实时邻近效应校正电路针对与区域对应的条纹计算最佳剂量写在下一个和之后。

2. 发明授权

US06346354B1 Pattern writing method 有权
标题翻译：图案书写方式
公开(公告)号：US06346354B1
公开(公告)日：2002-02-12
申请号：US09533265
申请日：2000-03-20
申请人： Takayuki Abe , Hirohito Anze , Susumu Oogi , Mitsuko Shimizu , Hideo Inoue , Takashi Saito , Toru Tojo , Takashi Kamikubo , Yoshiaki Hattori , Tomohiro Iijima , Noriaki Nakayamada
发明人： Takayuki Abe , Hirohito Anze , Susumu Oogi , Mitsuko Shimizu , Hideo Inoue , Takashi Saito , Toru Tojo , Takashi Kamikubo , Yoshiaki Hattori , Tomohiro Iijima , Noriaki Nakayamada
IPC分类号： G03F900
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31764 , H01J2237/31796 , Y10S430/143
摘要： A pattern writing method acquires the area of a pattern segment located in each of a plurality of small regions obtained by dividing a region on which a pattern is to be written, small region by small region, and writes a pattern based on an optimum dose calculated based on this area. This method employs a scheme of shifting pattern segments and averaging the accumulated area, so that even when the pitch of repetitive patterns slightly differs from the side length of each small region in the pitch direction, a peculiar error does not occur, thereby ensuring highly-precise proximity effect correction and contributing to improving the precision of writing an LSI pattern.
摘要翻译：图案写入方法获取位于通过将要写入图案的区域划分为小区域而获得的多个小区域中的每一个中的图案区域的区域，并且基于计算出的最佳剂量来写入图案基于这一领域。该方法采用移动图案段并平均累积面积的方案，使得即使当重复图案的间距与俯仰方向上的每个小区域的侧边长度稍微不同时，也不会发生特殊的错误，精确的邻近效应校正，有助于提高写入LSI图案的精度。

3. 发明授权

US5863682A Charged particle beam writing method for determining optimal exposure dose prior to pattern drawing 失效
标题翻译：带电粒子束写入方法，用于在图形绘制之前确定最佳曝光剂量
公开(公告)号：US5863682A
公开(公告)日：1999-01-26
申请号：US804260
申请日：1997-02-21
申请人： Takayuki Abe , Susumu Oogi , Takashi Kamikubo , Hirohito Anze
发明人： Takayuki Abe , Susumu Oogi , Takashi Kamikubo , Hirohito Anze
IPC分类号： G03F7/20 , H01J37/304 , H01J37/317 , H01L21/027 , G03F9/00 , G03C5/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/2059 , H01J37/304 , H01J37/3174 , H01J2237/30461 , Y10S430/143
摘要： A charged particle beam writing method for determining an optimal exposure dose for each position in a pattern to be drawn on a target before actually drawing the pattern by irradiating the target with charged particles and drawing the pattern with the obtained optimal exposure doses, comprising the first step of determining the first approximate optimal exposure dose for each position on said target, the second step of determining the second optimal exposure dose for each position on said target by determining a corrective value di for correcting said first approximate optimal exposure dose obtained by multiplying the error in the exposure dose of the position produced when exposed to said first approximate optimal exposure dose by a regulation coefficient of a value substantially equal to the exposure dose U(x, y) to back scattering charged particles and adding said corrective value to said first approximate optimal exposure dose, said exposure dose being variable as a function of the location (x, y) of the position, the third step of repeating one of (1) the second step for a predetermined number of times, (2) the second step until each of said second approximate optimal exposure doses tends to converge, and (3) the second step until all the errors in said second approximate optimal exposure doses are found within a predetermined value.
摘要翻译：一种带电粒子束写入方法，用于通过用带电粒子照射目标物并用获得的最佳曝光剂量绘制图案，在实际绘制图案之前，确定要绘制在目标上的图案中的每个位置的最佳曝光剂量，包括第一确定所述目标上每个位置的第一近似最佳曝光剂量的步骤，通过确定用于校正所述第一近似最佳曝光剂量的校正值di来确定所述目标上每个位置的第二最佳曝光剂量的第二步骤，当暴露于所述第一近似最佳曝光剂量时所产生的位置的曝光剂量的误差大体上等于曝光剂量U（x，y）的反向散射带电粒子的调节系数，并将所述校正值加到所述第一近似最佳暴露剂量，所述暴露剂量随th的变化而变化位置的位置（x，y），重复（1）第二步骤之一预定次数的第三步骤，（2）第二步骤，直到所述第二近似最佳曝光剂量中的每一个倾向于收敛，和（3）第二步，直到发现所述第二近似最佳曝光剂量的所有误差在预定值内。

4. 发明申请

US20100178611A1 Lithography method of electron beam 审中-公开
标题翻译：电子束光刻法
公开(公告)号：US20100178611A1
公开(公告)日：2010-07-15
申请号：US12659774
申请日：2010-03-22
申请人： Hirohito Anze , Takehiko Katsumata , Shuichi Tamamushi , Takashi Kamikubo , Rieko Nishimura , Makoto Hiramoto , Tomoo Motosugi , Takazuki Ohnishi
发明人： Hirohito Anze , Takehiko Katsumata , Shuichi Tamamushi , Takashi Kamikubo , Rieko Nishimura , Makoto Hiramoto , Tomoo Motosugi , Takazuki Ohnishi
IPC分类号： G03F7/20
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/78 , G03F7/0382 , G03F7/0392 , H01J37/3174
摘要： A charged particle beam writing method on a chemical amplification type resist, comprising: coating said chemical amplification type resist which contains an acid diffusion inhibitor, on a surface of a mask substrate, exposing charged particle beams to said chemical amplification type resist layer on said surface of the mask substrate, baking said chemical amplification type resist layer which said charged particle beams were exposed, and developing said chemical amplification type resist after the baking, wherein an exposure current density of said electron beams exposing ranges of 50˜5000 A/cm2, said photo acid generator is in an amount ranging from 0.1 to 30 weight percent (wt %) relative to all solid content of said chemical amplification type resist, and said acid diffusion inhibitor is composed of at least one material selected from the group consisting of tertiary amine class, benzyl-carbamate class, benzoin-carbamate class, o-carbamoyl-hydroxy-amine class, o-carbamoyl-oxime class, and dithio-calbamate-quaternary ammonium salt.
摘要翻译：一种化学放大型抗蚀剂的带电粒子束写入方法，包括：在掩模基板的表面上涂覆含有酸扩散抑制剂的所述化学放大型抗蚀剂，将带电粒子束暴露于所述表面上的所述化学放大型抗蚀剂层对所述带电粒子束进行曝光的所述化学放大型抗蚀剂层进行烘烤，烘烤后显影所述化学放大型抗蚀剂，其中所述电子束的曝光电流密度为50〜5000A / cm 2，所述光酸产生剂的量相对于所述化学增幅型抗蚀剂的全部固体含量为0.1〜30重量％（重量％），所述酸扩散抑制剂由选自三级胺类，氨基甲酸苄酯类，苯偶姻 - 氨基甲酸酯类，邻氨基甲酰基 - 羟基 - 胺类，邻氨基甲酰基肟屁股和二硫代氨基甲酸铵 - 季铵盐。

5. 发明授权

US08367276B2 Mask blank and method of manufacturing mask 有权
标题翻译：面膜空白和制作面膜的方法
公开(公告)号：US08367276B2
公开(公告)日：2013-02-05
申请号：US12209694
申请日：2008-09-12
申请人： Yasushi Okubo , Masahiro Hashimoto , Toshiyuki Suzuki , Takayuki Ohnishi , Hirohito Anze , Hitoshi Sunaoshi , Takashi Kamikubo
发明人： Yasushi Okubo , Masahiro Hashimoto , Toshiyuki Suzuki , Takayuki Ohnishi , Hirohito Anze , Hitoshi Sunaoshi , Takashi Kamikubo
IPC分类号： G03F1/00 , G03F7/00
CPC分类号： G03F1/80 , G03F1/54 , G03F1/78
摘要： A mask blank is formed on a transparent substrate with a light-shielding film of a material mainly containing chromium and is used for obtaining a photomask by forming the light-shielding film into a transfer pattern by lithography using an electron beam writing resist. The mask blank includes a mask layer formed on the light-shielding film for serving as an etching mask in etching that forms the light-shielding film into the transfer pattern. The mask layer is made of a material containing silicon. The mask blank further includes a chromium nitride-based film formed on the mask layer and containing at least chromium and nitrogen.
摘要翻译：在具有主要含有铬的材料的遮光膜的透明基板上形成掩模坯料，并且通过使用电子束写入抗蚀剂通过光刻将遮光膜形成为转印图案而用于获得光掩模。掩模坯料包括形成在遮光膜上的掩模层，用于在蚀刻中用作蚀刻掩模，其将遮光膜形成为转印图案。掩模层由含硅的材料制成。掩模坯料还包括形成在掩模层上并且至少含有铬和氮的氮化铬基膜。

6. 发明申请

US20090075185A1 MASK BLANK AND METHOD OF MANUFACTURING MASK 有权
标题翻译： MASK BLANK和制造掩模的方法
公开(公告)号：US20090075185A1
公开(公告)日：2009-03-19
申请号：US12209694
申请日：2008-09-12
申请人： Yasushi OKUBO , Masahiro Hashimoto , Toshiyuki Suzuki , Takayuki Ohnishi , Hirohito Anze , Hitoshi Sunaoshi , Takashi Kamikubo
发明人： Yasushi OKUBO , Masahiro Hashimoto , Toshiyuki Suzuki , Takayuki Ohnishi , Hirohito Anze , Hitoshi Sunaoshi , Takashi Kamikubo
IPC分类号： G03F1/00
CPC分类号： G03F1/80 , G03F1/54 , G03F1/78
摘要： A mask blank is formed on a transparent substrate with a light-shielding film of a material mainly containing chromium and is used for obtaining a photomask by forming the light-shielding film into a transfer pattern by lithography using an electron beam writing resist. The mask blank includes a mask layer formed on the light-shielding film for serving as an etching mask in etching that forms the light-shielding film into the transfer pattern. The mask layer is made of a material containing silicon. The mask blank further includes a chromium nitride-based film formed on the mask layer and containing at least chromium and nitrogen.
摘要翻译：在具有主要含有铬的材料的遮光膜的透明基板上形成掩模坯料，并且通过使用电子束写入抗蚀剂通过光刻将遮光膜形成为转印图案而用于获得光掩模。掩模坯料包括形成在遮光膜上的掩模层，用于在蚀刻中用作蚀刻掩模，其将遮光膜形成为转印图案。掩模层由含硅的材料制成。掩模坯料还包括形成在掩模层上并且至少含有铬和氮的氮化铬基膜。

7. 发明申请

US20070243487A1 FORMING METHOD OF RESIST PATTERN AND WRITING METHOD OF CHARGED PARTICLE BEAM 审中-公开
标题翻译：电荷型粒子的形成方法和填充粒子束的写入方法
公开(公告)号：US20070243487A1
公开(公告)日：2007-10-18
申请号：US11734587
申请日：2007-04-12
申请人： Hirohito Anze , Takehiko Katsumata , Shuichi Tamamushi , Takashi Kamikubo , Rieko Nishimura , Makoto Hiramoto , Tomoo Motosugi , Takayuki Ohnishi
发明人： Hirohito Anze , Takehiko Katsumata , Shuichi Tamamushi , Takashi Kamikubo , Rieko Nishimura , Makoto Hiramoto , Tomoo Motosugi , Takayuki Ohnishi
IPC分类号： G03C1/00
CPC分类号： G03F1/78
摘要： The present invention realized the excellent dimensional accuracy of resist patterns by using a chemical amplification type resist whose effective acid diffusion length is shorten without decreasing throughput of a charged particle beam writing system.The resist pattern forming method of the present invention features that the amount of the acid diffusion inhibitor in a chemical amplification type resist in order to shorten the effective acid diffusion length increases and the current density of a charged particle exposure in order to prevent the throughput drop of the writing system increases.The present invention provides a resist pattern forming method comprising a process of coating a chemical amplification type resist on the surface of a processing substrate, a process of exposing patterns by using charged particle beams on the surface of the said substrate, a process of post exposure baking the chemical amplification type resist after the exposure, and a process of developing the said chemical amplification type resist.The said method features that the amount of an acid diffusion inhibitor in the said resist increases and the current density of the charged particle exposure also increases.
摘要翻译：本发明通过使用有效的酸扩散长度缩短而不降低带电粒子束写入系统的通过量的化学放大型抗蚀剂来实现抗蚀剂图案的优异的尺寸精度。本发明的抗蚀剂图案形成方法的特征在于为了缩短有效酸扩散长度，化学放大型抗蚀剂中的酸扩散抑制剂的量增加，并且带电粒子暴露的电流密度为了防止生产量下降的写作系统增加。本发明提供一种抗蚀剂图案形成方法，其包括在处理基板的表面上涂布化学放大型抗蚀剂的方法，通过在所述基板的表面上使用带电粒子束来曝光图案的处理，后曝光在曝光后烘烤化学放大型抗蚀剂，以及显影所述化学放大型抗蚀剂的工艺。所述方法的特征在于所述抗蚀剂中的酸扩散抑制剂的量增加，并且带电粒子暴露的电流密度也增加。

8. 发明授权

US08133402B2 Pattern forming method, charged particle beam writing apparatus, and recording medium on which program is recorded 有权
标题翻译：图案形成方法，带电粒子束写入装置和记录有程序的记录介质
公开(公告)号：US08133402B2
公开(公告)日：2012-03-13
申请号：US12023384
申请日：2008-01-31
申请人： Takayuki Ohnishi , Hirohito Anze
发明人： Takayuki Ohnishi , Hirohito Anze
IPC分类号： C03C15/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： A pattern forming method includes performing a first resist development during a first time period to a substrate obtained by coating a resist film having a predetermined thickness onto a predetermined film to be etched, measuring the film thickness of the resist film after the first resist development, writing a predetermined pattern corrected in dimension on the basis of an amount of reduction in thickness of the resist film on the resist film by using a charged particle beam, performing a second resist development during a second time period which is longer than the first time period to the substrate after writing the pattern, and etching the predetermined film to be etched by using the resist film after the second resist development as a mask.
摘要翻译：图案形成方法包括在第一时间段内对通过将具有预定厚度的抗蚀剂膜涂覆到要蚀刻的预定膜上获得的基板进行第一抗蚀剂显影，测量第一抗蚀剂显影后的抗蚀剂膜的膜厚度，基于通过使用带电粒子束在抗蚀剂膜上的抗蚀剂膜的厚度减小量来量化尺寸校正的预定图案，在比第一时间段长的第二时间段内执行第二抗蚀剂显影在写入图案之后到基板，并且在第二抗蚀剂显影之后用抗蚀剂膜作为掩模蚀刻要蚀刻的预定膜。

9. 发明授权

US5885747A Charged beam lithography method 失效
标题翻译：带电光束光刻法
公开(公告)号：US5885747A
公开(公告)日：1999-03-23
申请号：US703429
申请日：1996-08-26
申请人： Satoshi Yamasaki , Shuichi Tamamushi , Hirohito Anze
发明人： Satoshi Yamasaki , Shuichi Tamamushi , Hirohito Anze
IPC分类号： H01L21/027 , G03F1/20 , G03F1/68 , G03F7/20 , H01J37/302 , G03C5/00
CPC分类号： H01J37/3026 , G03F1/20 , G03F7/203 , H01J2237/31764 , Y10S430/143
摘要： A charged beam lithography method comprising the method steps shown in the Figure below.
摘要翻译：一种带电光束光刻方法，包括下图所示的方法步骤。

10. 发明申请

US20080185538A1 PATTERN FORMING METHOD, CHARGED PARTICLE BEAM WRITING APPARATUS, AND RECORDING MEDIUM ON WHICH PROGRAM IS RECORDED 有权
标题翻译：图案形成方法，充电颗粒光束书写装置和记录程序的记录介质
公开(公告)号：US20080185538A1
公开(公告)日：2008-08-07
申请号：US12023384
申请日：2008-01-31
申请人： Takayuki OHNISHI , Hirohito Anze
发明人： Takayuki OHNISHI , Hirohito Anze
IPC分类号： G21K5/00 , G06F17/50
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： A pattern forming method includes performing a first resist development during a first time period to a substrate obtained by coating a resist film having a predetermined thickness onto a predetermined film to be etched, measuring the film thickness of the resist film after the first resist development, writing a predetermined pattern corrected in dimension on the basis of an amount of reduction in thickness of the resist film on the resist film by using a charged particle beam, performing a second resist development during a second time period which is longer than the first time period to the substrate after writing the pattern, and etching the predetermined film to be etched by using the resist film after the second resist development as a mask.
摘要翻译：图案形成方法包括在第一时间段内对通过将具有预定厚度的抗蚀剂膜涂覆到要蚀刻的预定膜上获得的基板进行第一抗蚀剂显影，测量第一抗蚀剂显影后的抗蚀剂膜的膜厚度，基于通过使用带电粒子束在抗蚀剂膜上的抗蚀剂膜的厚度减小量来量化尺寸校正的预定图案，在比第一时间段长的第二时间段内执行第二抗蚀剂显影在写入图案之后到基板，并且在第二抗蚀剂显影之后用抗蚀剂膜作为掩模蚀刻要蚀刻的预定膜。

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