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    • 2. 发明申请
    • CUTTING INSERT FOR HIGH-EFFICIENT CUTTING
    • 切割刀片高效切割
    • WO2008078892A1
    • 2008-07-03
    • PCT/KR2007/006567
    • 2007-12-17
    • KORLOY INC.SUNG, Wook JungSUNG, In Sik
    • SUNG, Wook JungSUNG, In Sik
    • B23C5/02
    • B23B27/141B23B2200/0495B23B2200/087B23B2200/286B23C5/06B23C5/202Y10T407/23
    • A cutting insert for high-efficiency cutting is disclosed. The cutting insert includes an upper surface (110a), a lower surface (HOb), side surfaces (114) and corner side surfaces (116), which connect the side surfaces to each other. A circular opening is formed through the central portions of the upper and lower surfaces. In the cutting insert, cutting edges are formed by respective junctions between one of the upper and lower surfaces and the side surfaces and between one of the upper and lower surfaces and the corner side surfaces. The cutting edges comprise three corner cutting edges (122), six major cutting edges (124), which extend from opposite ends of the corner cutting edges towards the neighbor corner cutting edges, and three minor cutting edges (126), which are connected between the major cutting edges. Furthermore, the cutting edges may be formed on both the upper surface and the lower surface.
    • 公开了一种用于高效切割的切削刀片。 切削刀片包括将侧表面彼此连接的上表面(110a),下表面(110a),侧表面(114)和角侧表面(116)。 通过上表面和下表面的中心部分形成圆形开口。 在切削刀片中,切削刃由上表面和下表面中的一个与侧表面之间以及上表面和下表面之一以及角侧表面之间的相应接合形成。 切割边缘包括三个角切割边缘(122),六个主切割边缘(124),其从角切削刃的相对端朝向相邻的角切削刃延伸,以及三个次切削刃(12​​6),其连接在 主要切削刃。 此外,切削刃可以形成在上表面和下表面上。
    • 3. 发明申请
    • MILLING CUTTING TOOL EMPLOYING A CUTTING INSERT
    • 使用切削刀具的铣削刀具
    • WO2010079948A3
    • 2010-09-23
    • PCT/KR2010000063
    • 2010-01-06
    • KORLOY INCSUNG WOOK JUNGNAM KI CHAN
    • SUNG WOOK JUNGNAM KI CHAN
    • B23C5/20B23B27/14B23B27/16B23C5/22
    • B23C5/06B23C5/202B23C2200/128B23C2200/205B23C2200/326Y10T407/1936Y10T407/22Y10T407/23
    • The present invention relates to a milling cutting tool employing a cutting insert. More specifically, the invention relates to a milling cutting tool employing a cutting insert which can increase the life of the tool because of the formation of concave, nick cutting edges in the side surfaces of the cutting insert and the consequent action whereby chips are finely sliced, the effective machining cutting edge is shrunk, friction is reduced and cutting resistance is reduced during high incision; and which can improve productivity because chip discharge is facilitated and resistance is reduced such that, consequently, a relatively large amount of travel can be achieved during high incision; and which can reduce the cutting resistance between the upper and lower surfaces and the chip sliced fine by means of the concave, nick cutting edges, because concave recesses are formed in the upper and lower surfaces of the cutting insert; and which further can perform a nick cutting edge function even without deformation of the seat side surface of a seat part for fastening the cutting insert and the cutter body, because a concave nick cutting edge is formed in the main cutting edge of the cutting insert.
    • 本发明涉及一种采用切削刀片的铣削刀具。 更具体地说,本发明涉及一种采用切削刀片的铣削刀具,由于在切削刀片的侧表面上形成凹形的切口切削刃,并由此切屑被精细切割,因此可以延长刀具的寿命 ,高切削时有效的加工切削刃收缩,摩擦减小,切削阻力降低; 并且其可以提高生产率,因为切屑排出便利并且阻力减小,因此在高切口期间可以实现相对大量的行程; 并且由于在切削刀片的上表面和下表面中形成有凹入的凹部,所以可以减小上表面和下表面之间的切削阻力,并且通过凹入的切削刃切削细切的切屑; 由于在切削刀片的主切削刃上形成有凹状的切削刃,因此即使在切削刀片和刀体的紧固用座部的座面侧面也不变形,也能够发挥切口切削刃功能。
    • 6. 发明授权
    • Nonvolatile memory device and method for fabricating the same
    • 非易失性存储器件及其制造方法
    • US08872249B2
    • 2014-10-28
    • US13604316
    • 2012-09-05
    • Sung-Wook Jung
    • Sung-Wook Jung
    • H01L23/532
    • H01L27/11582
    • The technology of the present invention relates to a non-volatile memory device and a fabrication method thereof. The non-volatile memory device includes channel layers protruding vertically from a substrate, a plurality of hole-supply layers and a plurality of gate electrodes, which are alternately stacked along the channel layers, and a memory film interposed between the channel layers and the gate electrodes and between the hole-supply layers and the gate electrodes. According to this technology, the hole-supply layers are formed between the memory cells such that sufficient holes are supplied to the memory cells during the erase operation of the memory cells, whereby the erase operation of the memory cells is smoothly performed without using the GIDL current, and the properties of the device are protected from being deteriorated due to program/erase cycling.
    • 本发明的技术涉及一种非易失性存储器件及其制造方法。 非易失性存储器件包括从衬底垂直突出的沟道层,沿着沟道层交替层叠的多个空穴供给层和多个栅电极,以及介于沟道层和栅极之间的存储膜 电极之间并且在空穴供给层和栅电极之间。 根据该技术,在存储单元的擦除操作期间,在存储单元之间形成空穴供给层,使得在存储单元的擦除操作期间向存储单元提供足够的空穴,从而在不使用GIDL的情况下平滑地执行存储单元的擦除操作 电流,并且由于编程/擦除循环,器件的特性被保护免于恶化。
    • 7. 发明申请
    • THIN FILM TRANSISTOR, METHOD OF FORMING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME
    • 薄膜晶体管,其形成方法和具有该膜的平板显示器件
    • US20100148155A1
    • 2010-06-17
    • US12388829
    • 2009-02-19
    • Byoung deog CHOIJun sin YiSung wook JungKyung soo JangJae hyun Cho
    • Byoung deog CHOIJun sin YiSung wook JungKyung soo JangJae hyun Cho
    • H01L29/786H01L21/336H01L51/52
    • H01L29/78606H01L27/3262H01L29/41733H01L29/66757
    • A thin film transistor (TFT), a method of forming the same and a flat panel display device having the same are disclosed. The TFT includes a buffer layer and a semiconductor layer which are sequentially disposed on a substrate, a gate pattern including an insulating pattern and a gate electrode pattern which are sequentially disposed on the semiconductor layer, source and drain regions defining a portion of the semiconductor layer below the gate pattern as a channel area, formed by doping the semiconductor layer disposed at both sides of the gate pattern with impurities, and extending from both sides of the channel area, a passivation layer which covers the entire surface of the substrate having the gate pattern, a first metal electrode which penetrates a portion of the passivation layer disposed on the source area and a portion of the source region below the portion of the passivation layer to be electrically connected with the source region, and a second metal electrode which penetrates a portion of the passivation layer disposed on the drain area and a portion of the drain region below the portion of the passivation layer to be electrically connected with the drain region. According to the present invention, a metal is infiltrated into source and drain regions to disperse an electric current when a TFT operates, and thus charge mobility is improved, and damage of a drain region caused by the excessive current density is prevented, leading to the long lifespan and excellent performance.
    • 公开了薄膜晶体管(TFT),其形成方法和具有该薄膜晶体管的平板显示装置。 TFT包括顺序地设置在基板上的缓冲层和半导体层,依次设置在半导体层上的绝缘图案和栅极电极图案的栅极图案,限定半导体层的一部分的源极和漏极区域 在作为沟道区域的栅极图案之下,通过用杂质掺杂设置在栅极图案的两侧的半导体层并从沟道区域的两侧延伸形成的钝化层,该钝化层覆盖具有栅极的基板的整个表面 图案,穿过设置在源极区上的钝化层的一部分的第一金属电极和钝化层的与源极区域电连接的部分下方的源极区的一部分,以及穿透源极区的第二金属电极 设置在漏极区域上的钝化层的一部分和位于t的部分下方的漏极区域的一部分 他的钝化层与漏极区电连接。 根据本发明,当TFT工作时,金属渗透到源区和漏区以分散电流,因此电荷迁移率得到改善,并且防止了由过大的电流密度引起的漏极区的损坏,从而导致 使用寿命长,性能优良。