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1. 发明申请

US20100148155A1 THIN FILM TRANSISTOR, METHOD OF FORMING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME 有权
标题翻译：薄膜晶体管，其形成方法和具有该膜的平板显示器件
公开(公告)号：US20100148155A1
公开(公告)日：2010-06-17
申请号：US12388829
申请日：2009-02-19
申请人： Byoung deog CHOI , Jun sin Yi , Sung wook Jung , Kyung soo Jang , Jae hyun Cho
发明人： Byoung deog CHOI , Jun sin Yi , Sung wook Jung , Kyung soo Jang , Jae hyun Cho
IPC分类号： H01L29/786 , H01L21/336 , H01L51/52
CPC分类号： H01L29/78606 , H01L27/3262 , H01L29/41733 , H01L29/66757
摘要： A thin film transistor (TFT), a method of forming the same and a flat panel display device having the same are disclosed. The TFT includes a buffer layer and a semiconductor layer which are sequentially disposed on a substrate, a gate pattern including an insulating pattern and a gate electrode pattern which are sequentially disposed on the semiconductor layer, source and drain regions defining a portion of the semiconductor layer below the gate pattern as a channel area, formed by doping the semiconductor layer disposed at both sides of the gate pattern with impurities, and extending from both sides of the channel area, a passivation layer which covers the entire surface of the substrate having the gate pattern, a first metal electrode which penetrates a portion of the passivation layer disposed on the source area and a portion of the source region below the portion of the passivation layer to be electrically connected with the source region, and a second metal electrode which penetrates a portion of the passivation layer disposed on the drain area and a portion of the drain region below the portion of the passivation layer to be electrically connected with the drain region. According to the present invention, a metal is infiltrated into source and drain regions to disperse an electric current when a TFT operates, and thus charge mobility is improved, and damage of a drain region caused by the excessive current density is prevented, leading to the long lifespan and excellent performance.
摘要翻译：公开了薄膜晶体管（TFT），其形成方法和具有该薄膜晶体管的平板显示装置。 TFT包括顺序地设置在基板上的缓冲层和半导体层，依次设置在半导体层上的绝缘图案和栅极电极图案的栅极图案，限定半导体层的一部分的源极和漏极区域在作为沟道区域的栅极图案之下，通过用杂质掺杂设置在栅极图案的两侧的半导体层并从沟道区域的两侧延伸形成的钝化层，该钝化层覆盖具有栅极的基板的整个表面图案，穿过设置在源极区上的钝化层的一部分的第一金属电极和钝化层的与源极区域电连接的部分下方的源极区的一部分，以及穿透源极区的第二金属电极设置在漏极区域上的钝化层的一部分和位于t的部分下方的漏极区域的一部分他的钝化层与漏极区电连接。根据本发明，当TFT工作时，金属渗透到源区和漏区以分散电流，因此电荷迁移率得到改善，并且防止了由过大的电流密度引起的漏极区的损坏，从而导致使用寿命长，性能优良。

2. 发明授权

US08110485B2 Nanocrystal silicon layer structures formed using plasma deposition technique, methods of forming the same, nonvolatile memory devices having the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices 有权
标题翻译：使用等离子体沉积技术形成的纳米晶硅层结构，其形成方法，具有纳米晶硅层结构的非易失性存储器件以及制造非易失性存储器件的方法
公开(公告)号：US08110485B2
公开(公告)日：2012-02-07
申请号：US12388846
申请日：2009-02-19
申请人： Jun sin Yi , Byoung deog Choi , Sung wook Jung , Kyung soo Jang , Jae hyun Cho
发明人： Jun sin Yi , Byoung deog Choi , Sung wook Jung , Kyung soo Jang , Jae hyun Cho
IPC分类号： H01L21/36 , H01L29/76
CPC分类号： H01L21/02532 , H01L21/02436 , H01L21/02595 , H01L21/0262 , H01L21/28282 , H01L29/04 , H01L29/6675 , H01L29/66833 , H01L29/7881 , H01L29/792
摘要： Provided are nanocrystal silicon layer structures formed using a plasma deposition technique, methods of forming the same, nonvolatile memory devices including the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices. A method of forming a nanocrystal silicon layer structure includes forming a buffer layer on a substrate and forming a nanocrystal silicon layer on the buffer layer by a plasma deposition technique using silicon (Si)-containing gas and hydrogen (H2)-containing gas. In this method, the nanocrystal silicon layer can be directly deposited on a glass substrate using plasma vapor deposition without performing a post-processing process so that the fabrication of a nonvolatile memory device can be simplified, thereby reducing fabrication cost.
摘要翻译：提供了使用等离子体沉积技术形成的纳米晶硅层结构，其形成方法，包括纳米晶硅层结构的非易失性存储器件以及制造非易失性存储器件的方法。形成纳米晶硅层结构的方法包括在衬底上形成缓冲层，并通过使用含硅（Si）的气体和含氢（H 2）的气体）的等离子体沉积技术在缓冲层上形成纳米晶硅层。在该方法中，可以使用等离子体气相沉积将纳米晶硅层直接沉积在玻璃基板上，而不进行后处理工艺，从而可以简化非易失性存储器件的制造，从而降低制造成本。

3. 发明授权

US08022398B2 Thin film transistor, method of forming the same and flat panel display device having the same 有权
标题翻译：薄膜晶体管，其形成方法和具有该薄膜晶体管的平板显示装置
公开(公告)号：US08022398B2
公开(公告)日：2011-09-20
申请号：US12388829
申请日：2009-02-19
申请人： Byoung deog Choi , Jun sin Yi , Sung wook Jung , Kyung soo Jang , Jae hyun Cho
发明人： Byoung deog Choi , Jun sin Yi , Sung wook Jung , Kyung soo Jang , Jae hyun Cho
IPC分类号： H01L29/08
CPC分类号： H01L29/78606 , H01L27/3262 , H01L29/41733 , H01L29/66757
摘要： A thin film transistor (TFT), a method of forming the same and a flat panel display device having the same are disclosed. The TFT includes a buffer layer and a semiconductor layer which are sequentially disposed on a substrate, a gate pattern including an insulating pattern and a gate electrode pattern which are sequentially disposed on the semiconductor layer, source and drain regions defining a portion of the semiconductor layer below the gate pattern as a channel area, formed by doping the semiconductor layer disposed at both sides of the gate pattern with impurities, and extending from both sides of the channel area, a passivation layer which covers the entire surface of the substrate having the gate pattern, a first metal electrode which penetrates a portion of the passivation layer disposed on the source area and a portion of the source region below the portion of the passivation layer to be electrically connected with the source region, and a second metal electrode which penetrates a portion of the passivation layer disposed on the drain area and a portion of the drain region below the portion of the passivation layer to be electrically connected with the drain region. According to the present invention, a metal is infiltrated into source and drain regions to disperse an electric current when a TFT operates, and thus charge mobility is improved, and damage of a drain region caused by the excessive current density is prevented, leading to the long lifespan and excellent performance.
摘要翻译：公开了薄膜晶体管（TFT），其形成方法和具有该薄膜晶体管的平板显示装置。 TFT包括顺序地设置在基板上的缓冲层和半导体层，依次设置在半导体层上的绝缘图案和栅极电极图案的栅极图案，限定半导体层的一部分的源极和漏极区域在作为沟道区域的栅极图案之下，通过用杂质掺杂设置在栅极图案的两侧的半导体层并从沟道区域的两侧延伸形成的钝化层，该钝化层覆盖具有栅极的基板的整个表面图案，穿过设置在源极区上的钝化层的一部分的第一金属电极和钝化层的与源极区域电连接的部分下方的源极区的一部分，以及穿透源极区的第二金属电极设置在漏极区域上的钝化层的一部分和位于t的部分下方的漏极区域的一部分他的钝化层与漏极区电连接。根据本发明，当TFT工作时，金属渗透到源区和漏区以分散电流，因此电荷迁移率得到改善，并且防止了由过大的电流密度引起的漏极区的损坏，从而导致使用寿命长，性能优良。

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